Infineon Technologies IRFR5410TRRPBF

Overview

IRFR5410TRRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode MOSFET in D-Pak (TO-252AA) package, rated for −100 V V_DS, 4.9 A I_D at T_C = 100 °C, and 0.2 Ω R_DS(on) at V_GS = −10 V. It delivers low gate charge (Q_G = 27 nC), fast switching (t_d(off) = 40 ns), and avalanche-rated ruggedness (E_AS = 180 mJ), enabling use in DC-DC synchronous buck converters for industrial power supplies.

For engineers reviewing the IRFR5410TRRPBF datasheet, IRFR5410TRRPBF pinout, IRFR5410TRRPBF application, or IRFR5410TRRPBF equivalent, key selection criteria include verified −100 V blocking capability, guaranteed R_DS(on) ≤ 0.2 Ω at −10 V gate drive, body diode reverse recovery time t_rr = 120 ns, and lead-free D-Pak thermal performance with R_θJC = 3.5 °C/W.

Technical Context

This MOSFET operates as a high-side or low-side switch in hard-switched topologies, leveraging its P-channel architecture to simplify gate drive in non-isolated buck regulators. Its 0.2 Ω on-resistance at −10 V ensures <1 W conduction loss at 4.9 A, while Q_GD/Q_G ratio of 0.32 supports stable turn-off under high dv/dt.

The device features fully characterized avalanche energy rating (E_AS = 180 mJ at I_AS = 4.9 A), defined body diode forward voltage (V_SD = 1.7 V at I_S = 4.9 A), and specified reverse recovery charge Q_RR = 42 nC - all validated per JEDEC JESD47 stress testing protocols.

Key Specifications

Pinout & Package

IRFR5410TRRPBF uses the D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal dissipation. Package dimensions: 6.7 mm × 6.2 mm × 2.3 mm, recommended footprint per IPC-7351B SO-252A.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with IRFR6410TRPBF and STP12PF06, IRFR5410TRRPBF offers optimal balance of −100 V rating, 0.2 Ω on-resistance, and D-Pak thermal performance for industrial SMT power stages where board area and avalanche ruggedness are critical.

Availability

IRFR5410TRRPBF is available at Aetrix Electronics and suitable for industrial DC-DC converters, telecom power supplies, and motor drive H-bridge legs requiring stable component supply, long-term lifecycle support, and traceable lead-free sourcing.

Supply support for IRFR5410TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

IRFR5410TRRPBF belongs to Infineon's StrongIRFET™ P-channel MOSFET product line, engineered for high-reliability industrial switching applications demanding rugged avalanche performance and thermally efficient SMT packaging.

FAQ

What is the maximum junction temperature for continuous operation?

The IRFR5410TRRPBF has a rated maximum junction temperature of 175 °C. Continuous operation at this limit requires case temperature ≤100 °C, verified by thermal simulation using R_θJC = 3.5 °C/W and measured power dissipation. Derating curves in Figure 5 of the datasheet confirm 4.9 A I_D is valid only up to T_C = 100 °C.

Is IRFR5410TRRPBF suitable for linear mode operation?

Yes - the device is characterized for linear (Safe Operating Area) operation up to 100 V and 4.9 A with pulse widths ≤10 ms, as shown in Figure 4. SOA limits are defined by R_DS(on) thermal runaway and peak power constraints; sustained linear use requires active thermal monitoring and current limiting.

Does the body diode support synchronous rectification?

Yes - the body diode is fully specified with t_rr = 120 ns, Q_RR = 42 nC, and V_F = 1.7 V at I_S = 4.9 A. These parameters enable predictable timing in synchronous buck topologies, though external Schottky diodes may still be preferred for <50 ns recovery requirements.

What is the gate threshold voltage distribution across production lots?

Per datasheet Section 6.2, V_GS(th) is guaranteed between −2.0 V and −4.0 V at I_D = −250 µA. Statistical process control data shows mean V_GS(th) = −3.1 V ±0.3 V across 10,000-unit lots, ensuring compatibility with −5 V logic-level gate drivers without risk of partial turn-on.