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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR9010

Name: IRFR9010
Brand: Vishay Siliconix
SKU: IRFR9010
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR9010

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9010.pdf

Description:: MOSFET P-CH 50V 5.3A DPAK

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Product details

Overview

IRFR9010 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -50 V drain-source voltage, 0.50 Ω R_DS(on) at V_GS = -10 V, and -5.3 A continuous drain current at T_C = 25 °C. It delivers robust avalanche capability (136 mJ single-pulse), high dV/dt immunity (5.8 V/ns), and is optimized for DC/DC converters and low-power switching applications requiring compact, thermally efficient layout.

For engineers reviewing the IRFR9010 datasheet, IRFR9010 pinout, IRFR9010 application, or IRFR9010 equivalent, this page provides verified package mapping, validated thermal and switching parameters, confirmed gate charge values (Q_g = 9.1 nC), and real-world design context for synchronous buck topologies, hot-swap circuits, and reverse polarity protection.

Technical Context

The IRFR9010 employs planar V-groove silicon process technology to achieve low on-resistance with high transconductance (g_fs = 1.7 S typical). Its body diode exhibits fast reverse recovery (t_rr = 75 ns typical) and low Q_rr (0.22 μC), enabling efficient operation in hard-switched and synchronous rectification roles.

Designed for surface-mount PCB assembly on 16 mm tape, the device features integrated avalanche-rated structure and dynamic dV/dt ruggedness-critical for inductive load switching where voltage transients exceed supply rails. Gate threshold voltage (V_GS(th) = -2.0 to -4.0 V) ensures reliable turn-on with standard logic-level drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-50 V - Maximum blocking voltage for negative-rail switching applications
R_DS(on)	0.50 Ω @ V_GS = -10 V - Enables <1.4 W conduction loss at -2.8 A, suitable for low-duty-cycle loads
Q_g	9.1 nC - Determines gate drive energy requirement; compatible with low-current drivers (e.g., microcontroller GPIO + buffer)
I_D (cont.)	-5.3 A @ T_C = 25 °C - Specifies maximum steady-state current with heatsink; derates to -3.3 A at 100 °C case
E_AS	136 mJ - Confirmed unclamped inductive switching energy handling without failure
dV/dt	5.8 V/ns - High immunity to parasitic turn-on during fast voltage transitions in motor or relay drives
R_thJC	5.0 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting for thermal management

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. Dimensions per Vishay document 71197 (Version 1 & 2); recommended copper pad per Application Note 826 (10.668 mm × 5.690 mm minimum).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires ≤ ±20 V drive; input capacitance C_iss = 240 pF affects switching speed
Pin 2 (D)	Drain	Main power terminal; electrically and thermally connected to exposed backside pad; handles full load current and avalanche energy
Pin 3 (S)	Source	Reference node for gate drive; internal source inductance L_S = 7.5 nH impacts high-speed switching ringing

Key Features

Feature	Design Value
Repetitive avalanche rating	Rated for repeated unclamped inductive switching up to I_AR = -5.3 A, enabling robust operation without external snubbers
Dynamic dV/dt immunity	5.8 V/ns minimum - prevents false turn-on in noisy environments like motor control or industrial power supplies
Low gate charge	Q_g = 9.1 nC - reduces driver power loss and simplifies gate drive design for battery-powered systems
Fast body diode recovery	t_rr = 75 ns typical, Q_rr = 0.22 μC - minimizes reverse recovery losses in synchronous rectifier and flyback configurations
Surface-mount DPAK	TO-252 footprint - supports automated assembly and reduces PCB parasitic inductance vs. through-hole alternatives

Applications

Reverse Polarity Protection	DC/DC Converter High-Side Switch
Use Scenario: Prevents damage to downstream circuitry when input power is connected with incorrect polarity in portable electronics or automotive accessories. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement in series with input rail; operates in linear and saturation regions during fault and normal conditions. Use Value: Eliminates 0.3–0.7 V diode drop, improving efficiency by >3% at 2 A; leverages -50 V V_DS and -5.3 A I_D to handle 12 V/24 V systems with margin.	Use Scenario: Controls power delivery in non-isolated buck regulators for FPGA core voltage or sensor bias rails. IC Role / Device Role / Timing Role: High-side switch in synchronous buck topology; switched at 100–500 kHz with gate drive referenced to source. Use Value: Low R_DS(on) (0.50 Ω) limits conduction loss; fast t_r/t_f (47/35 ns) enables high-frequency operation with minimal switching loss.
Hot-Swap Controller Back-End	Telecom Line Card Power Sequencing
Use Scenario: Enables safe insertion/removal of line cards into live backplanes without disrupting system power or causing bus glitches. IC Role / Device Role / Timing Role: Inrush current limiter and fault isolation switch; driven by dedicated hot-swap controller IC (e.g., LTC4211). Use Value: Avalanche rating (136 mJ) absorbs energy during short-circuit events; dV/dt immunity prevents spurious turn-on during transient surges.	Use Scenario: Sequences power to multiple subsystems (PHY, DSP, memory) on telecom line cards to meet GR-63-CORE surge and ESD requirements. IC Role / Device Role / Timing Role: Controlled power switch activated after supervisor IC confirms stable input and correct sequencing order. Use Value: -50 V rating accommodates 48 V nominal telecom rails with 20% tolerance; TO-252 package allows dense layout near point-of-load regulators.

Reverse Polarity Protection

DC/DC Converter High-Side Switch

Use Scenario: Prevents damage to downstream circuitry when input power is connected with incorrect polarity in portable electronics or automotive accessories.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement in series with input rail; operates in linear and saturation regions during fault and normal conditions.

Use Value: Eliminates 0.3–0.7 V diode drop, improving efficiency by >3% at 2 A; leverages -50 V V_DS and -5.3 A I_D to handle 12 V/24 V systems with margin.

Use Scenario: Controls power delivery in non-isolated buck regulators for FPGA core voltage or sensor bias rails.

IC Role / Device Role / Timing Role: High-side switch in synchronous buck topology; switched at 100–500 kHz with gate drive referenced to source.

Use Value: Low R_DS(on) (0.50 Ω) limits conduction loss; fast t_r/t_f (47/35 ns) enables high-frequency operation with minimal switching loss.

Hot-Swap Controller Back-End

Telecom Line Card Power Sequencing

Use Scenario: Enables safe insertion/removal of line cards into live backplanes without disrupting system power or causing bus glitches.

IC Role / Device Role / Timing Role: Inrush current limiter and fault isolation switch; driven by dedicated hot-swap controller IC (e.g., LTC4211).

Use Value: Avalanche rating (136 mJ) absorbs energy during short-circuit events; dV/dt immunity prevents spurious turn-on during transient surges.

Use Scenario: Sequences power to multiple subsystems (PHY, DSP, memory) on telecom line cards to meet GR-63-CORE surge and ESD requirements.

IC Role / Device Role / Timing Role: Controlled power switch activated after supervisor IC confirms stable input and correct sequencing order.

Use Value: -50 V rating accommodates 48 V nominal telecom rails with 20% tolerance; TO-252 package allows dense layout near point-of-load regulators.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHFR9010-GE3	Same die, lead-free/halogen-free construction; identical R_DS(on), Q_g, and avalanche ratings	No functional difference; preferred for RoHS-compliant designs requiring JEDEC-standard packaging	Select SiHFR9010-GE3 when lead-free compliance is mandatory and tape-and-reel logistics align with production planning
IRFU9010PbF	Same silicon, IPAK (TO-251) package; identical electrical specs but different thermal path and mounting method	Requires through-hole assembly; higher R_thJA (110 °C/W) limits power density vs. DPAK's PCB thermal coupling	Choose IRFU9010PbF only if legacy through-hole manufacturing infrastructure is fixed and board space permits larger footprint

Compared with IRFR9010, SiHFR9010-GE3 offers identical performance with environmental compliance, while IRFU9010PbF trades surface-mount efficiency for through-hole compatibility-neither is pin-compatible due to differing package outlines (DPAK vs. IPAK), requiring PCB layout revision.

Availability

IRFR9010 is available at Aetrix Electronics and suitable for DC/DC converters, reverse polarity protection circuits, and hot-swap modules requiring stable component supply across industrial, telecom, and embedded computing programs.

Supply support for IRFR9010 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The IRFR9010 belongs to Vishay's "State of the Art" power MOSFET family designed for high-efficiency, high-density power conversion in space-constrained applications where thermal performance and ruggedness are critical.

FAQ

What is the maximum continuous drain current for IRFR9010 at 100 °C case temperature?

The IRFR9010 supports -3.3 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the DPAK package; maintaining T_C ≤ 100 °C requires adequate PCB copper area or heatsinking. The IRFR9010's R_thJC = 5.0 °C/W enables effective junction-to-heatsink thermal transfer when the drain pad is properly soldered to a thermal plane.

Does IRFR9010 support logic-level gate drive?

The IRFR9010 has a gate threshold voltage range of -2.0 V to -4.0 V, making it compatible with logic-level gate drive at -5 V, though full enhancement (R_DS(on) ≤ 0.50 Ω) requires V_GS = -10 V. For 3.3 V or 5 V microcontroller outputs, a level-shifting driver is recommended to ensure robust turn-on and minimize conduction loss. The IRFR9010's Q_g = 9.1 nC remains manageable with buffered GPIO drive.

Can IRFR9010 be used in avalanche mode repeatedly?

Yes-the IRFR9010 is explicitly rated for repetitive avalanche operation per its datasheet, with I_AR = -5.3 A and pulse width limited by maximum junction temperature. This capability allows safe use in inductive switching applications without external clamping components, provided peak junction temperature stays within -55 °C to +150 °C and duty cycle constraints (e.g., ≤2%) are observed. The IRFR9010's 136 mJ single-pulse E_AS validates its ruggedness foundation.

What is the recommended PCB pad layout for IRFR9010's DPAK package?

Vishay Application Note 826 specifies minimum DPAK (TO-252) pads for IRFR9010: 10.668 mm × 5.690 mm (0.420" × 0.224") for the thermal drain pad, with 4.572 mm (0.180") width for source and gate lands. Thermal vias under the drain pad (≥6× 0.3 mm diameter) are strongly advised to reduce R_thJA from 110 °C/W to ~45 °C/W. The IRFR9010's performance in power applications depends critically on this layout adherence.

How does IRFR9010's body diode compare to standard rectifiers in flyback applications?

The IRFR9010's integrated body diode has t_rr = 75 ns typical and Q_rr = 0.22 μC, significantly faster and lower-loss than general-purpose rectifiers (e.g., 1N5819: t_rr > 100 ns, Q_rr > 1 μC). In flyback snubber or synchronous rectification roles, this reduces reverse recovery spikes and EMI. However, the IRFR9010's V_SD = -5.5 V at -5.3 A means it is not optimized as a freewheeling diode alone-its primary value lies in controlled switching, with diode behavior as a secondary feature.

IRFR9010 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 5.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 240 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR9010 FAQ

1.How can I place an order for IRFR9010 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9010 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9010 reliable?

The price and inventory of IRFR9010 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9010 is usually 5 days.

3.What payment methods are accepted for IRFR9010?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9010 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9010?

IRFR9010 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9010 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9010?

For technical support, including IRFR9010 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9010 requirements.

6.How does Aetrix verify that IRFR9010 is sourced from the original manufacturer or authorized distributors?

All IRFR9010 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9010 meets industry standards.

7.What is the process for return or replacement of IRFR9010?

All IRFR9010 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9010, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9010 part is unused and in its original packaging.

Return procedure for IRFR9010:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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