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Vishay Siliconix IRFR9010TR
- Part No.:
- IRFR9010TR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9010TR.pdf
- Description:
- MOSFET P-CH 50V 5.3A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,991
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Product details
Overview
IRFR9010TR from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -50 V drain-source voltage, 0.50 Ω RDS(on) at VGS = -10 V, and -5.3 A continuous drain current at TC = 25 °C. It delivers robust avalanche capability (136 mJ single-pulse EAS) and high diode recovery dV/dt (5.8 V/ns), making it suitable for DC/DC converter high-side switching and reverse polarity protection circuits.
For engineers reviewing the IRFR9010TR datasheet, IRFR9010TR pinout, IRFR9010TR application, or IRFR9010TR equivalent, key selection criteria include its P-channel logic-level compatibility (VGS(th) = -2.0 to -4.0 V), low gate charge (Qg = 9.1 nC max), thermal resistance (RthJC = 5.0 °C/W), and surface-mount DPAK footprint optimized for PCB thermal management in space-constrained power stages.
Technical Context
This device employs planar V-groove trench-enhanced power MOSFET technology with optimized cell geometry to achieve low on-resistance while maintaining high transconductance (gfs = 1.7 S typ) and stable parametric behavior over temperature. Its integral body diode exhibits fast reverse recovery (trr = 33–160 ns) and low Qrr (0.090–0.52 μC), enabling efficient synchronous rectification and unclamped inductive switching.
The IRFR9010TR operates as a voltage-controlled switch with gate threshold voltage tightly specified between -2.0 V and -4.0 V, supporting direct drive from 3.3 V or 5 V logic controllers. Its dynamic parameters-including Ciss = 240 pF, Coss = 160 pF, and Crss = 30 pF-are characterized at VDS = -25 V and f = 1.0 MHz, ensuring predictable gate drive design and minimal switching loss in high-frequency SMPS topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -50 V - Maximum blocking voltage for high-side P-channel switching in ≤48 V systems |
| RDS(on) | 0.50 Ω max at VGS = -10 V - Enables <1.4 W conduction loss at -5.3 A, critical for thermally constrained layouts |
| Qg | 9.1 nC max - Determines gate driver current requirement and switching speed in hard-switched converters |
| ID (cont.) | -5.3 A at TC = 25 °C - Specifies maximum steady-state current with heatsink; derates linearly to -3.3 A at 100 °C |
| EAS | 136 mJ - Quantifies unclamped inductive energy handling without failure, essential for flyback and buck-boost reliability |
| dV/dt (diode) | 5.8 V/ns - Ensures robust body diode commutation under fast voltage transients, reducing risk of spurious turn-on |
| RthJC | 5.0 °C/W - Defines junction-to-case thermal path efficiency; enables accurate heatsink sizing when mounted to copper pour |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction and mechanical stability. Dimensions per JEDEC outline: 6.09 mm × 6.54 mm × 2.29 mm (L × W × H), with 2.29 mm lead pitch (e) and 4.56 mm center-to-center spacing (e1). Recommended minimum PCB pad: 6.18 mm × 5.69 mm for drain tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control electrode; requires ≤±20 V drive; input capacitance Ciss = 240 pF dictates gate resistor selection for EMI control |
| Pin 2 (D) | Drain | Main power terminal; electrically connected to exposed backside thermal pad; carries full load current and dissipates switching/conduction loss |
| Pin 3 (S) | Source | Reference node for gate drive; tied to system ground or floating rail; body diode anode; source inductance LS = 7.5 nH affects switching waveform fidelity |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic dV/dt rating | 5.8 V/ns - Prevents false triggering during fast transient events in automotive and industrial power rails |
| Repetitive avalanche capability | Rated for repetitive operation up to IAR = -5.3 A - Supports reliable operation in inductive load switching without external snubbers |
| Surface-mount DPAK (TO-252) | Low-profile 2.29 mm height with thermal pad - Reduces PCB parasitic inductance vs. through-hole packages and improves thermal transfer to copper pour |
| Simple gate drive requirements | VGS(th) = -2.0 to -4.0 V - Compatible with standard 3.3 V/5 V microcontrollers and logic-level drivers without level-shifting circuitry |
| Enhanced body diode performance | trr = 33–160 ns, Qrr = 0.090–0.52 μC - Minimizes reverse recovery loss and EMI in synchronous rectifier and bidirectional switch applications |
Applications
| DC/DC Converter High-Side Switch | Reverse Polarity Protection |
|---|---|
|
Use Scenario: Used as high-side switch in non-isolated buck or buck-boost converters operating from 12–48 V input rails. IC Role / Device Role / Timing Role: P-channel MOSFET configured as active high-side switch; controlled by PWM signal referenced to input rail. Use Value: Low RDS(on) (0.50 Ω) minimizes conduction loss; fast switching (tf = 35–59 ns) reduces transition loss at 200–500 kHz frequencies. |
Use Scenario: Placed in series with power input to protect downstream circuitry from accidental reverse battery connection. IC Role / Device Role / Timing Role: Unidirectional blocking element; conducts only when VIN is correctly polarized relative to ground. Use Value: Low VGS(th) ensures full enhancement at 3.3 V logic; low RDS(on) limits voltage drop (<265 mV at 0.5 A), preserving system efficiency. |
| Hot-Swap Controller Back-End | Load Switch for Peripheral Power Rails |
|
Use Scenario: Integrated into hot-swap circuits to limit inrush current and provide fault isolation during board insertion into live backplanes. IC Role / Device Role / Timing Role: Main pass transistor; driven by dedicated hot-swap controller IC to regulate ramp rate and respond to overcurrent events. Use Value: Avalanche rating (136 mJ) absorbs energy during short-circuit faults; low gate charge enables rapid turn-off response (<20 ns td(off)). |
Use Scenario: Enables/disables power to USB peripherals, sensors, or communication modules in portable and embedded systems. IC Role / Device Role / Timing Role: Controlled load switch; gate driven directly by microcontroller GPIO with no external biasing. Use Value: Logic-level compatibility allows direct 3.3 V drive; low leakage (IDSS ≤ -250 μA) prevents standby current drain in battery-powered devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiHFR9010TR-GE3 | Same RDS(on), Qg, and package; halogen-free, RoHS-compliant variant with GE3 suffix; identical absolute max ratings and thermal specs | No functional difference; preferred for lead-free/halogen-free compliance programs requiring IPC/JEDEC Class 3 assembly | Select SiHFR9010TR-GE3 when environmental compliance (IEC 61249-2-21) is mandatory and tape-and-reel packaging matches production line requirements |
| IRFU9010PbF | Same die, but in IPAK (TO-251) straight-lead package; identical electrical specs but higher RthJA (110 °C/W vs. DPAK's lower value with PCB copper); no thermal pad | Suitable for through-hole prototyping or legacy designs where DPAK reflow is unavailable; less effective thermal management in high-power density layouts | Choose IRFU9010PbF only when board assembly process prohibits surface-mount components or when existing IPAK footprint must be retained |
Compared with IRFR9010TR, SiHFR9010TR-GE3 offers identical performance with enhanced environmental compliance, while IRFU9010PbF trades thermal efficiency for through-hole compatibility-neither is pin-compatible due to differing package footprints (DPAK vs. IPAK), requiring PCB layout revision.
Availability
IRFR9010TR is available at Aetrix Electronics and suitable for DC/DC converters, reverse polarity protection circuits, and hot-swap controller designs requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and embedded OEM programs.
Supply support for IRFR9010TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The IRFR9010TR belongs to Vishay's "TrenchFET® Gen II" P-channel power MOSFET product line, engineered for high-efficiency, low-voltage power management in space-constrained consumer, computing, and telecom applications.
FAQ
What is the maximum gate-source voltage rating for the IRFR9010TR?
The IRFR9010TR has a maximum gate-source voltage rating of ±20 V, as specified in its Absolute Maximum Ratings table. Exceeding this limit risks permanent gate oxide damage. For reliable operation, gate drive circuits should clamp VGS within this range-especially during transient conditions or when using bootstrap or charge-pump drivers. The IRFR9010TR datasheet confirms this rating applies across the full operating temperature range (-55 °C to +150 °C).
Does the IRFR9010TR support logic-level gate drive?
Yes, the IRFR9010TR supports logic-level gate drive with a gate-threshold voltage (VGS(th)) ranging from -2.0 V to -4.0 V, allowing full enhancement using standard 3.3 V or 5 V microcontroller outputs. At VGS = -3.0 V, the device delivers usable RDS(on) (typically <1.2 Ω), and at VGS = -5.0 V, it achieves near-minimum on-resistance. This makes the IRFR9010TR suitable for direct GPIO control without external level shifters or gate drivers.
What is the thermal resistance from junction to case (RthJC) for the IRFR9010TR?
The IRFR9010TR has a maximum junction-to-case (drain) thermal resistance (RthJC) of 5.0 °C/W, measured from the silicon die to the exposed drain pad of the DPAK (TO-252) package. This value assumes proper soldering to a minimum 6.18 mm × 5.69 mm copper pad per Vishay's recommended footprint. Effective thermal design requires coupling this pad to internal or external copper planes to realize the full benefit of the low RthJC in real-world PCB layouts.
Can the IRFR9010TR be used in avalanche mode repeatedly?
Yes, the IRFR9010TR is explicitly rated for repetitive avalanche operation with IAR = -5.3 A, provided pulse width is limited by maximum junction temperature (TJ ≤ 150 °C) as shown in Figure 14 of the datasheet. This capability eliminates the need for external clamping diodes in many inductive switching applications. However, each avalanche event contributes to cumulative wear; lifetime reliability depends on total energy per pulse, repetition rate, and thermal management-designers must validate against actual system stress profiles.
What are the key differences between IRFR9010TR and IRFU9010PbF?
The IRFR9010TR and IRFU9010PbF share identical die characteristics (VDS, RDS(on), Qg, etc.) but differ in package: IRFR9010TR uses surface-mount DPAK (TO-252) with thermal pad, while IRFU9010PbF uses through-hole IPAK (TO-251) with straight leads. This results in different thermal performance (RthJC = 5.0 °C/W vs. not specified for IPAK), PCB footprint, and assembly method. They are not interchangeable without layout changes, and IRFU9010PbF lacks the DPAK's low-inductance advantage.
IRFR9010TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 50 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 500mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 240 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR9010TR FAQ
1.How can I place an order for IRFR9010TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9010TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9010TR reliable?
The price and inventory of IRFR9010TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9010TR is usually 5 days.
3.What payment methods are accepted for IRFR9010TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9010TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9010TR?
IRFR9010TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9010TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9010TR?
For technical support, including IRFR9010TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9010TR requirements.
6.How does Aetrix verify that IRFR9010TR is sourced from the original manufacturer or authorized distributors?
All IRFR9010TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9010TR meets industry standards.
7.What is the process for return or replacement of IRFR9010TR?
All IRFR9010TR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9010TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9010TR part is unused and in its original packaging.
Return procedure for IRFR9010TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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