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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR9010TRL

Name: IRFR9010TRL
Brand: Vishay Siliconix
SKU: IRFR9010TRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR9010TRL

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9010TRL.pdf

Description:: MOSFET P-CH 50V 5.3A DPAK

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Product details

Overview

IRFR9010TRL from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -50 V drain-source voltage, 0.50 Ω R_DS(on) at V_GS = -10 V, and -5.3 A continuous drain current at T_C = 25 °C. It delivers robust avalanche capability (136 mJ single-pulse), fast switching (t_r = 47–71 ns), and high dV/dt immunity (5.8 V/ns), making it suitable for DC/DC converter high-side switches and reverse polarity protection circuits.

For engineers reviewing the IRFR9010TRL datasheet, IRFR9010TRL pinout, IRFR9010TRL application, or IRFR9010TRL equivalent, key selection criteria include its -50 V V_DS, 0.50 Ω on-resistance, DPAK thermal performance (R_thJC = 5.0 °C/W), body diode recovery time (33–160 ns), and Pb-free/halogen-free compliance per JEDEC TO-252 standards.

Technical Context

This device employs planar vertical DMOS technology optimized for low conduction loss and high ruggedness. Its gate threshold voltage range of -2.0 V to -4.0 V ensures reliable turn-on with standard -10 V logic-level drive while maintaining noise immunity. The integrated body diode supports synchronous rectification and unclamped inductive switching.

The DPAK package enables PCB-mounted thermal management with 25 W maximum power dissipation at T_A = 25 °C and low parasitic inductance (L_D = 4.5 nH, L_S = 7.5 nH), critical for minimizing voltage overshoot during high-speed switching in compact power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-50 V - Supports input rails up to 40 V in reverse polarity protection and high-side switch applications
R_DS(on)	0.50 Ω max at V_GS = -10 V - Limits conduction loss to ≤14 W at -5.3 A, enabling thermally constrained designs
I_D (cont.)	-5.3 A at T_C = 25 °C - Sustains full load current with minimal heatsinking in DC/DC converters
E_AS	136 mJ - Withstands energy from inductive kickback without failure in motor drive or solenoid control
dV/dt rating	5.8 V/ns - Resists false triggering during fast transient events in noisy industrial environments
Q_g	9.1 nC max - Enables efficient gate driving with low-power controllers and reduces switching losses
t_r/t_f	47–71 ns / 35–59 ns - Supports >500 kHz switching frequencies in isolated flyback and buck converters

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction to PCB copper area. Dimensions per JEDEC outline: 6.09 mm × 6.54 mm × 2.29 mm (L × W × H), thermal pad area ≥10.67 mm × 5.69 mm recommended per Application Note 826.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal requiring ≤±20 V drive; 500 nA leakage ensures low standby power
Pin 2 (D)	Drain	Main power output terminal; electrically connected to exposed thermal pad for heat transfer
Pin 3 (S)	Source	Reference node for gate drive; internal source inductance (7.5 nH) affects diode reverse recovery

Key Features

Feature	Design Value
Dynamic dV/dt rating	5.8 V/ns - Prevents spurious turn-on during high dv/dt transients in motor drives and SMPS
Repetitive avalanche capability	-5.3 A I_AR, 2.5 mJ E_AR - Enables reliable operation under repetitive inductive fault conditions
Low gate charge	Q_g = 9.1 nC - Reduces driver power requirement and improves efficiency in high-frequency switching
Surface-mount DPAK	TO-252 footprint - Supports automated assembly and lowers parasitic inductance vs. through-hole alternatives
Enhanced body diode	t_rr = 33–160 ns, Q_rr = 0.09–0.52 μC - Minimizes switching loss and EMI in synchronous rectifier topologies

Applications

Reverse Polarity Protection	DC/DC Converter High-Side Switch
Use Scenario: Protecting 12 V or 24 V battery-powered systems (e.g., automotive ECUs, portable medical devices) from damage due to incorrect battery connection. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with gate driven by microcontroller GPIO or dedicated level shifter. Use Value: Eliminates need for series Schottky diode, reducing forward voltage drop from ~0.4 V to <0.03 V at 5 A, improving system efficiency by >3%.	Use Scenario: High-side switching in non-isolated buck regulators powering FPGA core voltages or telecom line cards. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input to output inductor-capacitor network. Use Value: 0.50 Ω R_DS(on) limits conduction loss to <13.5 W at 5.3 A, enabling compact thermal design without active cooling.
Motor Driver Half-Bridge	Hot-Swap Controller
Use Scenario: Upper-leg switch in brushed DC motor H-bridge for industrial actuators or robotics where bidirectional control and regenerative braking are required. IC Role / Device Role / Timing Role: High-side power switch with integrated body diode conducting freewheeling current during PWM off-time. Use Value: 136 mJ single-pulse avalanche energy absorbs inductive energy during abrupt current interruption, preventing destructive voltage spikes.	Use Scenario: Inrush current limiting and fault isolation in redundant 48 V telecom power distribution units. IC Role / Device Role / Timing Role: Series pass element controlled by hot-swap controller IC to ramp up load voltage gradually and disconnect on overcurrent. Use Value: -50 V V_DS rating accommodates 48 V nominal + 20% tolerance and transient surges, ensuring safe operation during live insertion.

Reverse Polarity Protection

DC/DC Converter High-Side Switch

Use Scenario: Protecting 12 V or 24 V battery-powered systems (e.g., automotive ECUs, portable medical devices) from damage due to incorrect battery connection.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with gate driven by microcontroller GPIO or dedicated level shifter.

Use Value: Eliminates need for series Schottky diode, reducing forward voltage drop from ~0.4 V to <0.03 V at 5 A, improving system efficiency by >3%.

Use Scenario: High-side switching in non-isolated buck regulators powering FPGA core voltages or telecom line cards.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input to output inductor-capacitor network.

Use Value: 0.50 Ω R_DS(on) limits conduction loss to <13.5 W at 5.3 A, enabling compact thermal design without active cooling.

Motor Driver Half-Bridge

Hot-Swap Controller

Use Scenario: Upper-leg switch in brushed DC motor H-bridge for industrial actuators or robotics where bidirectional control and regenerative braking are required.

IC Role / Device Role / Timing Role: High-side power switch with integrated body diode conducting freewheeling current during PWM off-time.

Use Value: 136 mJ single-pulse avalanche energy absorbs inductive energy during abrupt current interruption, preventing destructive voltage spikes.

Use Scenario: Inrush current limiting and fault isolation in redundant 48 V telecom power distribution units.

IC Role / Device Role / Timing Role: Series pass element controlled by hot-swap controller IC to ramp up load voltage gradually and disconnect on overcurrent.

Use Value: -50 V V_DS rating accommodates 48 V nominal + 20% tolerance and transient surges, ensuring safe operation during live insertion.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHFR9010TRL-GE3	Same R_DS(on) (0.50 Ω), identical DPAK package, but Vishay's newer halogen-free variant with tighter Q_g spec (6.1–9.1 nC vs. 9.1 nC max)	No functional difference; fully interchangeable in existing designs with same layout and drive circuitry	Select SiHFR9010TRL-GE3 for RoHS-compliant production requiring halogen-free materials and marginally lower gate drive loss
IRLR9343TRPbF	Lower V_DS (-40 V), lower R_DS(on) (0.045 Ω), higher I_D (-11 A), but larger D2PAK package and different pinout (G-D-S vs. G-S-D)	Not pin-compatible; requires PCB redesign and gate drive recalibration due to lower threshold and higher current capability	Choose IRLR9343TRPbF only when upgrading for higher current density and lower conduction loss, accepting layout change cost

Compared with IRFR9010TRL, SiHFR9010TRL-GE3 offers identical electrical and mechanical behavior with enhanced environmental compliance, while IRLR9343TRPbF provides superior conduction performance at the expense of pin compatibility and board-level redesign effort.

Availability

IRFR9010TRL is available at Aetrix Electronics and suitable for reverse polarity protection, DC/DC converter high-side switching, and motor driver half-bridge applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFR9010TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability across industrial, automotive, and computing markets.

The IRFR9010TRL belongs to Vishay's legacy "IR" power MOSFET family designed for cost-sensitive, high-volume power conversion and protection applications where proven ruggedness and ease of use are prioritized over ultra-low R_DS(on).

FAQ

What is the maximum continuous drain current rating for IRFR9010TRL at 100 °C case temperature?

The IRFR9010TRL is rated for -3.3 A continuous drain current at T_C = 100 °C, reflecting linear derating from -5.3 A at 25 °C using the specified 0.20 W/°C factor. This value is validated under PCB-mount conditions with adequate copper pour and must be verified against actual thermal design using R_thJC = 5.0 °C/W and ambient constraints. The IRFR9010TRL datasheet specifies this limit in Absolute Maximum Ratings Table.

Does IRFR9010TRL support logic-level gate drive?

No, the IRFR9010TRL is not a logic-level MOSFET. Its gate threshold voltage range is -2.0 V to -4.0 V, and it is characterized for R_DS(on) at V_GS = -10 V. While it may partially turn on at -5 V, guaranteed performance (e.g., 0.50 Ω R_DS(on)) requires -10 V drive. For true logic-level operation, consider alternatives like the IRLR9343TRPbF. The IRFR9010TRL datasheet explicitly states V_GS = -10 V test condition for on-resistance.

What is the thermal resistance from junction to case (R_thJC) for IRFR9010TRL?

The IRFR9010TRL has a maximum junction-to-case (drain) thermal resistance of 5.0 °C/W, measured from die junction to the exposed drain pad. This value assumes proper soldering to a minimum 10.67 mm × 5.69 mm copper pad per Vishay Application Note 826. R_thJC is critical for calculating junction temperature rise under load and is confirmed in the Thermal Resistance Ratings table of the IRFR9010TRL datasheet.

Can IRFR9010TRL be used in avalanche mode repeatedly?

Yes, the IRFR9010TRL is rated for repetitive avalanche with I_AR = -5.3 A and E_AR = 2.5 mJ, provided pulse width and duty cycle remain within limits defined by maximum junction temperature (T_J ≤ 150 °C). The datasheet specifies this as a repetitive rating with pulse width limited by thermal constraints (see Fig. 14). Designers must verify thermal design margins when operating in repetitive avalanche. The IRFR9010TRL product summary confirms this capability.

What is the body diode reverse recovery time (t_rr) for IRFR9010TRL?

The IRFR9010TRL body diode reverse recovery time is specified as 33 ns (typical), 75 ns (typical), and 160 ns (maximum) at T_J = 25 °C, I_F = -4.7 A, and dI/dt = 100 A/μs. This parameter directly impacts switching loss and EMI in hard-switched topologies. The t_rr value is documented in the Drain-Source Body Diode Characteristics section of the IRFR9010TRL datasheet.

IRFR9010TRL Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 5.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 240 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR9010TRL FAQ

1.How can I place an order for IRFR9010TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9010TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9010TRL reliable?

The price and inventory of IRFR9010TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9010TRL is usually 5 days.

3.What payment methods are accepted for IRFR9010TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9010TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9010TRL?

IRFR9010TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9010TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9010TRL?

For technical support, including IRFR9010TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9010TRL requirements.

6.How does Aetrix verify that IRFR9010TRL is sourced from the original manufacturer or authorized distributors?

All IRFR9010TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9010TRL meets industry standards.

7.What is the process for return or replacement of IRFR9010TRL?

All IRFR9010TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9010TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9010TRL part is unused and in its original packaging.

Return procedure for IRFR9010TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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