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Vishay Siliconix IRFR9010TRLPBF
- Part No.:
- IRFR9010TRLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9010TRLPBF.pdf
- Description:
- MOSFET P-CH 50V 5.3A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,364
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Product details
Overview
IRFR9010TRLPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -50 V drain-source voltage, 0.50 Ω RDS(on) at VGS = -10 V, 9.1 nC total gate charge, and -5.3 A continuous drain current at TC = 25 °C. It delivers robust avalanche capability (136 mJ single-pulse), high dV/dt immunity (5.8 V/ns), and is optimized for DC/DC converters and low-power switching applications where compact size and thermal efficiency are critical.
For engineers reviewing the IRFR9010TRLPBF datasheet, IRFR9010TRLPBF pinout, IRFR9010TRLPBF application, or IRFR9010TRLPBF equivalent, this device is selected for its verified P-channel logic-level compatibility, surface-mount thermal performance in PCB-mounted configurations, and documented repetitive avalanche rating - key criteria for reliable high-side switch and load-switch designs in space-constrained industrial and computing systems.
Technical Context
This MOSFET employs planar V-groove silicon technology to achieve low on-resistance with stable transconductance (1.7 S typ.) and controlled body diode recovery (trr = 33–160 ns). Its gate threshold voltage range of -2.0 V to -4.0 V ensures reliable turn-on with standard -5 V or -10 V drive rails.
The device integrates a monolithic body diode with VSD = -5.5 V at -5.3 A and Qrr = 0.090–0.52 μC, enabling efficient synchronous rectification and flyback energy handling in buck and half-bridge topologies without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -50 V - Maximum blocking voltage for high-side switch configurations in ≤48 V systems |
| RDS(on) | 0.50 Ω max at VGS = -10 V - Enables <1.4 W conduction loss at -5.3 A, supporting thermally constrained PCB layouts |
| Qg | 9.1 nC max - Determines gate driver current requirement (~1.8 mA avg. for 500 kHz switching with 10 V swing) |
| ID (cont.) | -5.3 A at TC = 25 °C - Specifies maximum steady-state current with heatsink; derates to -3.3 A at 100 °C case |
| EAS | 136 mJ - Quantifies unclamped inductive switching robustness; supports reliable operation in relay/snubberless solenoid drivers |
| dV/dt | 5.8 V/ns - Confirmed immunity to parasitic turn-on in noisy motor-control or SMPS environments |
| trr | 33–160 ns - Body diode recovery time window affecting cross-conduction risk in synchronous topologies |
Pinout & Package
DPAK (TO-252) package with exposed drain pad for thermal conduction to PCB copper; 3-pin surface-mount configuration optimized for automated assembly and low-inductance layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal requiring ≤±20 V drive; 500 nA leakage enables high-impedance bias networks |
| Pin 2 (D) | Drain | Main power output terminal; electrically connected to exposed thermal pad for junction-to-PCB heat transfer |
| Pin 3 (S) | Source | Reference node for gate drive; ties to system ground or floating rail in high-side switch implementations |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic dV/dt rating | 5.8 V/ns immunity confirmed under repetitive conditions - prevents false triggering in high-noise power stages |
| Repetitive avalanche capability | Rated for repeated unclamped inductive switching up to 136 mJ - eliminates need for external snubbers in relay drivers |
| Surface-mount DPAK package | TO-252 outline with 6.35 mm × 6.73 mm footprint - enables high-density layout and direct PCB thermal coupling |
| Low gate charge | 9.1 nC total charge - reduces driver power loss and enables use of low-cost microcontroller GPIOs with RC gate networks |
| Body diode recovery performance | Qrr = 0.090–0.52 μC - minimizes reverse recovery losses in synchronous buck and flyback converters |
Applications
| High-Side Load Switch | DC/DC Synchronous Rectifier |
|---|---|
Use Scenario: Power sequencing for USB peripherals or FPGA I/O banks requiring controlled inrush current and fault isolation. IC Role / Device Role / Timing Role: P-channel high-side switch controlling VIN to load; driven by logic-level enable signal with fast turn-off to prevent backfeed. Use Value: 0.50 Ω RDS(on) limits dropout to <2.7 V at 5.3 A; -2.0 V to -4.0 V VGS(th) ensures clean turn-on with 3.3 V or 5 V control rails. | Use Scenario: Secondary-side rectification in isolated 12 V → 3.3 V flyback converter for telecom power supplies. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; body diode conducts during dead-time, then channel conducts during active phase. Use Value: 5.8 V/ns dV/dt rating prevents spurious turn-on during primary-side switching transitions; Qrr < 0.52 μC reduces switching loss vs. discrete diode alternatives. |
| Industrial Sensor Power Gate | Low-Power Motor Driver Stage |
Use Scenario: Isolated power delivery to analog sensor modules in PLC I/O cards, requiring low quiescent current and overcurrent protection. IC Role / Device Role / Timing Role: High-side power gate enabling/disabling sensor supply rail; integrated body diode handles inductive kickback from sensor bias circuits. Use Value: Repetitive avalanche rating (136 mJ) absorbs transient energy from cable ESD or inductive sensor disconnect events without external clamping. | Use Scenario: H-bridge half-bridge leg in 24 V brushed DC motor controller for HVAC actuators. IC Role / Device Role / Timing Role: Upper-leg P-channel switch in dual-MOSFET half-bridge; complements N-channel low-side device for bidirectional control. Use Value: -50 V VDS withstands motor back-EMF spikes; 5.3 A continuous rating supports 10 W mechanical output with forced-air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR9014TRLPBF | -60 V VDS, 0.35 Ω RDS(on) at -10 V, 12.5 nC Qg - higher voltage rating but increased gate drive demand | Better suited for 48 V bus systems; less optimal for 12–24 V applications due to higher Qg-driven switching loss | Select when system VIN exceeds 40 V or when lower RDS(on) justifies added gate drive complexity |
| SiHFR9010-GE3 | Identical electrical specs and DPAK package; halogen-free, lead-free per JEDEC J-STD-020 - same thermal and electrical behavior | No functional difference; preferred for RoHS-compliant production with no design change required | Choose for new designs targeting full environmental compliance without performance trade-offs |
Compared with IRFR9010TRLPBF, IRFR9014TRLPBF offers higher voltage margin but increases gate drive burden, while SiHFR9010-GE3 provides identical performance with enhanced material compliance - making it a drop-in replacement for environmentally regulated programs.
Availability
IRFR9010TRLPBF is available at Aetrix Electronics and suitable for DC/DC converters, high-side load switches, and industrial sensor power gating requiring stable component supply across multi-year production cycles.
Supply support for IRFR9010TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The IRFR9010TRLPBF belongs to Vishay's "TrenchFET® Gen II" P-channel power MOSFET family, engineered for high-efficiency, low-voltage switching in space-constrained industrial and computing power systems.
FAQ
What is the maximum continuous drain current rating for IRFR9010TRLPBF at 100 °C case temperature?
The IRFR9010TRLPBF has a maximum continuous drain current of -3.3 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package under sustained high-temperature operation and must be validated against actual PCB copper area and airflow conditions in the end application. The IRFR9010TRLPBF datasheet confirms this value with linear derating above 25 °C.
Does IRFR9010TRLPBF support logic-level gate drive?
Yes, IRFR9010TRLPBF supports logic-level gate drive with a gate threshold voltage range of -2.0 V to -4.0 V, enabling reliable turn-on using standard 3.3 V or 5 V microcontroller outputs. However, full RDS(on) specification (0.50 Ω) requires VGS = -10 V; at -5 V, RDS(on) rises significantly and must be verified from the typical characteristics curves in the IRFR9010TRLPBF datasheet.
What is the thermal resistance from junction to ambient for IRFR9010TRLPBF in standard PCB mount?
The maximum junction-to-ambient thermal resistance (RthJA) for IRFR9010TRLPBF is 110 °C/W under standard PCB mounting conditions (1 in² copper pad, 2 oz Cu). This value assumes no external heatsink and is highly dependent on PCB layout; the IRFR9010TRLPBF datasheet emphasizes that actual RthJA improves substantially with larger copper areas or thermal vias beneath the exposed drain pad.
Can IRFR9010TRLPBF be used in avalanche mode repeatedly?
Yes, IRFR9010TRLPBF is explicitly rated for repetitive avalanche operation with a single-pulse energy limit of 136 mJ and defined test conditions (VDD = -25 V, L = 9.7 mH, IL = -5.3 A). The device datasheet confirms repetitive capability subject to pulse width and duty cycle limits governed by junction temperature rise - making IRFR9010TRLPBF suitable for snubberless inductive load switching.
What is the body diode forward voltage of IRFR9010TRLPBF at rated current?
The body diode forward voltage (VSD) of IRFR9010TRLPBF is -5.5 V maximum at IS = -5.3 A and TJ = 25 °C, as specified in the Drain-Source Body Diode Characteristics table. This parameter directly impacts conduction loss during body-diode conduction phases in synchronous rectifiers or half-bridge dead-time intervals, and must be considered alongside trr and Qrr for complete loss analysis in the IRFR9010TRLPBF application.
IRFR9010TRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 50 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 500mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 240 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR9010TRLPBF FAQ
1.How can I place an order for IRFR9010TRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9010TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9010TRLPBF reliable?
The price and inventory of IRFR9010TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9010TRLPBF is usually 5 days.
3.What payment methods are accepted for IRFR9010TRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9010TRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9010TRLPBF?
IRFR9010TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9010TRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9010TRLPBF?
For technical support, including IRFR9010TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9010TRLPBF requirements.
6.How does Aetrix verify that IRFR9010TRLPBF is sourced from the original manufacturer or authorized distributors?
All IRFR9010TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9010TRLPBF meets industry standards.
7.What is the process for return or replacement of IRFR9010TRLPBF?
All IRFR9010TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9010TRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9010TRLPBF part is unused and in its original packaging.
Return procedure for IRFR9010TRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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