Vishay Siliconix IRFR9010TRPBF

Overview

IRFR9010TRPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -50 V drain-source voltage, 0.50 Ω R_DS(on) at V_GS = -10 V, 5.3 A continuous drain current at T_C = 25 °C, and featuring 9.1 nC total gate charge. It delivers robust avalanche capability (136 mJ single-pulse), high dV/dt immunity (5.8 V/ns), and is optimized for DC/DC converters and low-side switching in computing peripherals.

For engineers reviewing the IRFR9010TRPBF datasheet, IRFR9010TRPBF pinout, IRFR9010TRPBF application, or IRFR9010TRPBF equivalent, this page provides verified electrical parameters, thermal resistance data (R_thJC = 5.0 °C/W), body diode recovery characteristics (t_rr = 33–160 ns), and validated alternatives for P-channel logic-level-compatible switching in space-constrained PCB layouts.

Technical Context

This device employs planar V-groove MOSFET technology with optimized cell geometry to achieve low on-resistance while maintaining high transconductance (1.7 S typ.) and stable threshold voltage (-2.0 to -4.0 V). Its internal structure supports repetitive avalanche operation and features integrated body diode with controlled reverse recovery (Q_rr = 0.090–0.52 μC).

The DPAK package enables low-inductance PCB mounting with thermal pad soldered to copper pour, delivering 25 W maximum power dissipation at T_A = 25 °C and junction-to-case thermal resistance of 5.0 °C/W - critical for thermally demanding point-of-load regulators and hot-swap circuits.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal and electrical connection; 3-pin surface-mount configuration requiring minimum 10.67 mm × 5.69 mm PCB pad per Vishay Application Note 826.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with IRFR9010TRPBF, SiHFR9010-GE3 offers identical electrical performance with enhanced environmental compliance, while IRFU9010PbF trades thermal efficiency and surface-mount compatibility for through-hole assembly flexibility - neither is pin-compatible due to differing package outlines and thermal pad presence.

Availability

IRFR9010TRPBF is available at Aetrix Electronics and suitable for computing power delivery, telecom DC/DC conversion, and consumer peripheral switching requiring stable component supply across production lifecycles.

Supply support for IRFR9010TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The IRFR9010TRPBF belongs to Vishay's "TrenchFET® Gen II" P-channel power MOSFET family, engineered for high-efficiency, low-noise switching in space-constrained, thermally demanding applications such as server VRMs and telecom infrastructure.

FAQ

What is the maximum continuous drain current rating for IRFR9010TRPBF at 100 °C case temperature?

The IRFR9010TRPBF has a continuous drain current rating of -3.3 A at T_C = 100 °C, reflecting linear derating from -5.3 A at 25 °C using the specified 0.20 W/°C factor. This value is confirmed in the Absolute Maximum Ratings table and must be applied when designing for elevated ambient or limited heatsinking conditions. The IRFR9010TRPBF's thermal design must account for R_thJC = 5.0 °C/W to ensure junction temperature remains within -55 to +150 °C limits.

Does IRFR9010TRPBF support logic-level gate drive?

The IRFR9010TRPBF is not a logic-level MOSFET; its gate threshold voltage range is -2.0 V to -4.0 V, requiring ≥ -5 V for reliable enhancement-mode turn-on. While it can operate with -5 V gate drive, full R_DS(on) specification (0.50 Ω) is guaranteed only at V_GS = -10 V. For true 3.3 V or 5 V logic-compatible operation, a dedicated logic-level P-channel device such as the Si2305DS should be evaluated instead of the IRFR9010TRPBF.

What is the body diode reverse recovery charge (Q_rr) of IRFR9010TRPBF and why does it matter?

The IRFR9010TRPBF body diode exhibits Q_rr = 0.090–0.52 μC depending on operating conditions (T_J, I_F, dI/dt). This parameter directly impacts switching losses and voltage overshoot during hard commutation in synchronous rectifiers or H-bridge topologies. Lower Q_rr reduces diode recovery stress and EMI; the IRFR9010TRPBF's specified range supports moderate-frequency (<500 kHz) DC/DC designs where fast recovery is required but ultra-low Q_rr is not critical.

Can IRFR9010TRPBF be paralleled with other units for higher current handling?

Yes, the IRFR9010TRPBF is designed for ease of paralleling due to its positive temperature coefficient of R_DS(on) - as junction temperature rises, on-resistance increases, promoting natural current sharing. To ensure balanced operation, use matched gate resistors (e.g., 24 Ω per unit), symmetrical PCB layout with equal trace lengths, and shared thermal plane. The IRFR9010TRPBF's low Q_gd/Q_g ratio further enhances dynamic current sharing stability during switching transitions.

What is the recommended PCB pad layout for IRFR9010TRPBF in DPAK package?

Vishay Application Note 826 specifies a minimum 10.67 mm × 5.69 mm (0.420" × 0.224") copper pad for the drain thermal tab of the IRFR9010TRPBF, with 0.180" (4.572 mm) wide source/gate lands and 0.055" (1.397 mm) spacing. Thermal vias under the drain pad (≥6× 0.3 mm diameter) connected to inner-layer ground planes are strongly recommended to achieve the rated R_thJC = 5.0 °C/W and prevent localized overheating during sustained 5.3 A operation.