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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR9014NTR

Name: IRFR9014NTR
Brand: Vishay Siliconix
SKU: IRFR9014NTR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR9014NTR

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9014NTR.pdf

Description:: MOSFET P-CH 60V 5.1A DPAK

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Product details

Overview

IRFR9014NTR from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -60 V drain-source voltage, 0.50 Ω R_DS(on) at V_GS = -10 V, and -5.1 A continuous drain current at T_C = 25 °C. It supports fast switching, repetitive avalanche operation, and is used in DC-DC converters, load switches, and high-side power control circuits.

For engineers reviewing the IRFR9014NTR datasheet, IRFR9014NTR pinout, IRFR9014NTR application, or IRFR9014NTR equivalent, this page delivers verified electrical parameters, thermal derating behavior, gate charge profile, body diode recovery characteristics, and real-world mounting guidance for PCB layout and thermal management.

Technical Context

This third-generation Vishay power MOSFET uses planar V-groove technology to achieve ruggedized avalanche performance and low on-resistance. Its dynamic dV/dt rating of -4.5 V/ns and unclamped inductive switching capability (E_AS = 140 mJ) support reliable operation in inductive load switching.

The device integrates a co-packaged body diode with t_rr = 80–160 ns and Q_rr = 0.096–0.19 μC, enabling synchronous rectification and flyback recovery in buck and half-bridge topologies. Gate drive requirements are defined by Q_g = 12 nC, Q_gs = 3.8 nC, and Q_gd = 5.1 nC at V_GS = -10 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum blocking voltage in high-side switch configurations
R_DS(on)	0.50 Ω @ V_GS = -10 V - Enables <1.3 W conduction loss at -3.1 A
I_D (cont.)	-5.1 A @ T_C = 25 °C - Supports medium-power load switching without heatsink
Q_g	12 nC - Determines gate driver current requirement (~1.2 mA avg. for 100 kHz switching)
E_AS	140 mJ - Withstands single-pulse inductive energy without failure
t_rr	80–160 ns - Limits reverse recovery losses in synchronous rectifier designs
R_thJC	5.0 °C/W - Enables direct thermal coupling to PCB copper pour or heatsink

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. Standard leadframe plating per JEDEC MS-012, compatible with vapor-phase, infrared, and wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to system ground or low-side return path
Pin 2 (Gate)	Control input	Receives negative V_GS to turn on; requires 20 V max rating and low-impedance drive
Pin 3 (Drain)	Power output / high-side switch node	Exposed metal pad - must be connected to large copper area for thermal dissipation and low-inductance current path

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports I_AR = -5.1 A and E_AR = 2.5 mJ - enables robust operation under transient overloads without external snubbers
Dynamic dV/dt rating	-4.5 V/ns - prevents spurious turn-on during fast voltage transients in motor drives and SMPS
Fast switching	t_d(on) = 11 ns, t_r = 63 ns, t_d(off) = 9.6 ns - reduces switching losses in high-frequency DC-DC converters
Low R_DS(on) × Q_g figure-of-merit	6.0 Ω·nC - balances conduction and switching efficiency for 100–500 kHz applications
Surface-mount DPAK	Compatible with automated assembly and offers 25 W thermal capability at case temperature - eliminates through-hole drilling and supports compact board layouts

Applications

DC-DC Buck Converter	High-Side Load Switch
Use Scenario: Step-down regulation from 48 V bus to 12 V for industrial sensors and actuators. IC Role / Device Role / Timing Role: High-side synchronous rectifier in N+P dual-MOSFET configuration, operating at 250 kHz. Use Value: Low Q_gd/Q_g ratio (42.5%) minimizes Miller-induced shoot-through risk during commutation.	Use Scenario: Controlled 24 V power enable for PLC I/O modules with inrush limiting. IC Role / Device Role / Timing Role: P-channel high-side switch with gate driven by logic-level shifter; no external bootstrap required. Use Value: V_GS(th) = -2.0 to -4.0 V ensures clean turn-on with standard 3.3 V/5 V microcontroller outputs.
Motor Drive Half-Bridge	Reverse Polarity Protection
Use Scenario: 24 V brushed DC motor control in battery-powered tools with regenerative braking. IC Role / Device Role / Timing Role: Upper-leg switch in H-bridge; body diode conducts reverse current during PWM off-time. Use Value: t_rr ≤ 160 ns and Q_rr ≤ 0.19 μC limit diode recovery losses and EMI generation during freewheeling.	Use Scenario: Input protection for 12 V automotive ECUs against accidental battery reversal. IC Role / Device Role / Timing Role: P-channel MOSFET placed between battery and system rail; conducts only when polarity is correct. Use Value: R_DS(on) = 0.50 Ω adds <60 mV drop at 120 mA - negligible impact on system efficiency while blocking reverse current.

DC-DC Buck Converter

High-Side Load Switch

Use Scenario: Step-down regulation from 48 V bus to 12 V for industrial sensors and actuators.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in N+P dual-MOSFET configuration, operating at 250 kHz.

Use Value: Low Q_gd/Q_g ratio (42.5%) minimizes Miller-induced shoot-through risk during commutation.

Use Scenario: Controlled 24 V power enable for PLC I/O modules with inrush limiting.

IC Role / Device Role / Timing Role: P-channel high-side switch with gate driven by logic-level shifter; no external bootstrap required.

Use Value: V_GS(th) = -2.0 to -4.0 V ensures clean turn-on with standard 3.3 V/5 V microcontroller outputs.

Motor Drive Half-Bridge

Reverse Polarity Protection

Use Scenario: 24 V brushed DC motor control in battery-powered tools with regenerative braking.

IC Role / Device Role / Timing Role: Upper-leg switch in H-bridge; body diode conducts reverse current during PWM off-time.

Use Value: t_rr ≤ 160 ns and Q_rr ≤ 0.19 μC limit diode recovery losses and EMI generation during freewheeling.

Use Scenario: Input protection for 12 V automotive ECUs against accidental battery reversal.

IC Role / Device Role / Timing Role: P-channel MOSFET placed between battery and system rail; conducts only when polarity is correct.

Use Value: R_DS(on) = 0.50 Ω adds <60 mV drop at 120 mA - negligible impact on system efficiency while blocking reverse current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR9343PbF	R_DS(on) = 0.045 Ω @ V_GS = -10 V; higher current (I_D = -27 A); TO-252 package	Better suited for high-current loads (>10 A); requires larger gate drive due to Q_g = 42 nC	Select when lower conduction loss is critical and gate drive capability supports higher Q_g.
SiHFR9014-GE3	Same die, identical specs, Pb-free/halogen-free construction; same DPAK footprint and pinout	No functional difference; qualified to RoHS and Vishay Green standards	Preferred for new designs requiring compliance with environmental regulations without layout change.

Compared with IRFR9014NTR, IRFR9014NTR offers balanced switching-conduction trade-off for medium-power applications, while IRFR9014NTR provides identical performance in an environmentally compliant variant, and IRLR9343PbF delivers significantly lower R_DS(on) at the cost of higher gate charge and thermal mass.

Availability

IRFR9014NTR is available at Aetrix Electronics and suitable for DC-DC converters, high-side load switches, and reverse polarity protection circuits requiring stable component supply across industrial, automotive, and embedded OEM programs.

Supply support for IRFR9014NTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on reliability and power efficiency.

The IRFR9014NTR belongs to Vishay's third-generation power MOSFET family, engineered for ruggedness in switching power supplies, motor controls, and protection circuits where avalanche capability and surface-mount compatibility are essential.

FAQ

What is the maximum junction temperature rating for IRFR9014NTR?

The IRFR9014NTR has an operating junction temperature range of -55 °C to +150 °C. This rating is confirmed in the Absolute Maximum Ratings table and applies under all operating conditions including repetitive avalanche events. Thermal design must ensure that T_J does not exceed 150 °C during worst-case power dissipation, especially when operating near I_D = -5.1 A at elevated ambient temperatures. The IRFR9014NTR datasheet specifies derating curves based on case temperature and PCB mount conditions.

Does IRFR9014NTR support logic-level gate drive?

The IRFR9014NTR is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from -2.0 V to -4.0 V, and full enhancement requires V_GS ≤ -10 V to achieve R_DS(on) = 0.50 Ω. Driving it with only 3.3 V or 5 V will result in incomplete turn-on and excessive conduction loss. For logic-level compatibility, consider alternatives like Si2301 or IRLML6344. The IRFR9014NTR requires a dedicated negative gate driver or level-shifting circuit in high-side configurations.

Can IRFR9014NTR be used in avalanche mode repeatedly?

Yes, the IRFR9014NTR is explicitly rated for repetitive avalanche operation with I_AR = -5.1 A and E_AR = 2.5 mJ per pulse, as stated in the Absolute Maximum Ratings table. This capability is validated per test condition b (V_DD = -25 V, L = 6.3 mH, R_g = 25 Ω). However, pulse width and duty cycle must be limited to prevent junction temperature from exceeding 150 °C, as shown in Figure 11 of the IRFR9014NTR datasheet.

What is the recommended PCB pad layout for IRFR9014NTR in DPAK package?

Vishay recommends minimum pad dimensions of 0.224" × 0.420" (5.69 mm × 10.67 mm) for the drain thermal pad of IRFR9014NTR, per Application Note 826. A solid copper pour connected to the drain pad via multiple thermal vias (≥6× 0.3 mm diameter) to inner-layer ground or power planes is required to achieve R_thJA ≤ 50 °C/W in PCB-mount configuration. Solder mask defined pads are preferred to avoid solder wicking away from the drain pad during reflow.

How does the body diode performance of IRFR9014NTR compare to Schottky alternatives?

The IRFR9014NTR body diode has V_SD = -5.5 V at I_S = -5.1 A and t_rr = 80–160 ns, making it slower and higher forward-drop than discrete Schottky diodes. However, its integrated structure eliminates extra component count and layout area. In synchronous rectification, the IRFR9014NTR body diode is acceptable for <200 kHz operation where recovery losses remain manageable; for >300 kHz or low-voltage (<5 V) outputs, a separate Schottky or GaN FET is preferred. The IRFR9014NTR datasheet provides full diode characterization in Section "Drain-Source Body Diode Characteristics".

IRFR9014NTR Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 5.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR9014NTR FAQ

1.How can I place an order for IRFR9014NTR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9014NTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9014NTR reliable?

The price and inventory of IRFR9014NTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9014NTR is usually 5 days.

3.What payment methods are accepted for IRFR9014NTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9014NTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9014NTR?

IRFR9014NTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9014NTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9014NTR?

For technical support, including IRFR9014NTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9014NTR requirements.

6.How does Aetrix verify that IRFR9014NTR is sourced from the original manufacturer or authorized distributors?

All IRFR9014NTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9014NTR meets industry standards.

7.What is the process for return or replacement of IRFR9014NTR?

All IRFR9014NTR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9014NTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9014NTR part is unused and in its original packaging.

Return procedure for IRFR9014NTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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