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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR9014NTRR

Name: IRFR9014NTRR
Brand: Vishay Siliconix
SKU: IRFR9014NTRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR9014NTRR

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9014NTRR.pdf

Description:: MOSFET P-CH 60V 5.1A DPAK

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Product details

Overview

IRFR9014NTRR from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -60 V drain-source voltage, 0.50 Ω R_DS(on) at V_GS = -10 V, and -5.1 A continuous drain current at T_C = 25 °C. It delivers fast switching, repetitive avalanche capability, and dynamic dV/dt robustness for high-reliability DC-DC converter high-side switches and motor control H-bridge upper-leg drivers.

For engineers reviewing the IRFR9014NTRR datasheet, IRFR9014NTRR pinout, IRFR9014NTRR application, or IRFR9014NTRR equivalent, key selection criteria include its -60 V V_DS, 0.50 Ω on-resistance, 12 nC total gate charge, DPAK thermal performance (R_thJC = 5.0 °C/W), and body diode recovery characteristics (t_rr = 80–160 ns).

Technical Context

This device employs third-generation trench MOSFET technology optimized for low conduction loss and rugged unclamped inductive switching. Its gate threshold voltage range of -2.0 V to -4.0 V ensures reliable turn-on with standard -10 V gate drive while maintaining noise immunity against spurious turn-on during high-dV/dt transients.

The integrated body diode supports synchronous rectification and freewheeling in half-bridge topologies, with specified reverse recovery time (80–160 ns) and charge (0.096–0.19 μC) enabling accurate loss modeling. Thermal design leverages the DPAK's low junction-to-case resistance (5.0 °C/W) for PCB-mounted operation up to 2.5 W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum blocking voltage for high-side switch applications in 48 V systems
R_DS(on)	0.50 Ω @ V_GS = -10 V - Enables <1.6 W conduction loss at -3.1 A continuous current
Q_g	12 nC - Determines gate driver power requirement and switching speed in hard-switched converters
I_D (cont.)	-5.1 A @ T_C = 25 °C - Specifies maximum steady-state current with heatsink or copper pour
E_AS	140 mJ - Quantifies single-pulse avalanche energy handling for inductive load turn-off stress
t_rr	80–160 ns - Critical for calculating body diode switching losses and EMI in bridge configurations
R_thJC	5.0 °C/W - Defines thermal path efficiency from die to PCB copper thermal pad

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. Standard three-terminal configuration: Gate (G), Drain (D), Source (S). Drain tab electrically connected to internal die drain and serves as primary heat sink interface.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires -10 V for full enhancement; threshold range -2.0 to -4.0 V
D	Drain	Main high-side current path; electrically tied to exposed thermal pad; connects to input rail
S	Source	Reference node for gate drive; ties to load or switching node; carries full load current

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports reliable operation under unclamped inductive switching stress up to I_AR = -5.1 A and E_AR = 2.5 mJ
Dynamic dV/dt rating	Withstands -4.5 V/ns transient voltage slew rate without spurious turn-on or latch-up
Fast switching	Turn-on delay 11 ns, rise time 63 ns, turn-off delay 9.6 ns, fall time 31 ns at V_DD = -30 V
Surface mount (DPAK)	Enables automated assembly and high-power density layout with thermal pad soldered to PCB copper
P-channel logic-compatible	Operates with standard negative gate drive; compatible with isolated gate drivers for high-side configuration

Applications

DC-DC Converter High-Side Switch	Motor Control H-Bridge Upper Leg
Use Scenario: Used as high-side switch in non-synchronous buck converters for industrial 24–48 V input supplies. IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled power delivery to output inductor; operates in hard-switched mode with fixed-frequency PWM. Use Value: Low 0.50 Ω R_DS(on) minimizes conduction loss; -60 V rating accommodates 48 V nominal input with margin for transients.	Use Scenario: Upper-leg switch in brushed DC motor H-bridge driving 36 V loads in automotive HVAC actuators. IC Role / Device Role / Timing Role: High-side power switch enabling bidirectional motor control; coordinated with complementary low-side N-MOSFET. Use Value: Repetitive avalanche rating handles inductive kickback during PWM commutation; fast switching reduces transition losses.
Load Switch for Reverse Polarity Protection	Hot-Swap Controller Backplane FET
Use Scenario: Placed between input connector and system bus to block reverse current if external supply is misconnected. IC Role / Device Role / Timing Role: Always-on P-MOSFET configured as ideal diode replacement; gate tied to source via resistor for static operation. Use Value: Low R_DS(on) limits forward voltage drop to <2.6 V at 5 A; -60 V rating covers surge protection up to ±40 V.	Use Scenario: In-rush limiting FET in 12 V telecom backplane hot-swap modules compliant with IEEE 802.3af. IC Role / Device Role / Timing Role: Controlled high-side switch sequencing power to downstream circuitry using gate driver with soft-start. Use Value: 12 nC Q_g enables precise in-rush current slew rate control; DPAK thermal pad sustains 2.5 W dissipation during startup.

DC-DC Converter High-Side Switch

Motor Control H-Bridge Upper Leg

Use Scenario: Used as high-side switch in non-synchronous buck converters for industrial 24–48 V input supplies.

IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled power delivery to output inductor; operates in hard-switched mode with fixed-frequency PWM.

Use Value: Low 0.50 Ω R_DS(on) minimizes conduction loss; -60 V rating accommodates 48 V nominal input with margin for transients.

Use Scenario: Upper-leg switch in brushed DC motor H-bridge driving 36 V loads in automotive HVAC actuators.

IC Role / Device Role / Timing Role: High-side power switch enabling bidirectional motor control; coordinated with complementary low-side N-MOSFET.

Use Value: Repetitive avalanche rating handles inductive kickback during PWM commutation; fast switching reduces transition losses.

Load Switch for Reverse Polarity Protection

Hot-Swap Controller Backplane FET

Use Scenario: Placed between input connector and system bus to block reverse current if external supply is misconnected.

IC Role / Device Role / Timing Role: Always-on P-MOSFET configured as ideal diode replacement; gate tied to source via resistor for static operation.

Use Value: Low R_DS(on) limits forward voltage drop to <2.6 V at 5 A; -60 V rating covers surge protection up to ±40 V.

Use Scenario: In-rush limiting FET in 12 V telecom backplane hot-swap modules compliant with IEEE 802.3af.

IC Role / Device Role / Timing Role: Controlled high-side switch sequencing power to downstream circuitry using gate driver with soft-start.

Use Value: 12 nC Q_g enables precise in-rush current slew rate control; DPAK thermal pad sustains 2.5 W dissipation during startup.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR9020PbF	-100 V V_DS, 0.27 Ω R_DS(on), 20 nC Q_g, same DPAK package	Higher voltage rating suits 72 V battery systems; higher gate charge increases driver demand	Select when >60 V blocking is required and gate drive strength permits higher Q_g
SiHFR9014-GE3	Identical electrical specs and DPAK package; RoHS-compliant "-GE3" suffix denotes halogen-free construction	No functional difference; preferred for lead-free/halogen-free compliance programs	Direct material substitution where environmental compliance is mandated

Compared with IRFR9014NTRR, IRFR9020PbF offers higher voltage headroom but demands more gate drive energy, while SiHFR9014-GE3 provides identical performance with certified halogen-free packaging-making it suitable for strict environmental compliance without circuit redesign.

Availability

IRFR9014NTRR is available at Aetrix Electronics and suitable for DC-DC converters, motor control H-bridges, reverse polarity protection circuits, and hot-swap modules requiring stable component supply across industrial, automotive, and telecom production programs.

Supply support for IRFR9014NTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.

The IRFR9014NTRR belongs to Vishay's third-generation power MOSFET family engineered for high-efficiency, high-reliability switching in surface-mount power conversion and motor control applications.

FAQ

What is the maximum continuous drain current for IRFR9014NTRR at 100 °C case temperature?

The IRFR9014NTRR supports -3.2 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package mounted on standard PCB copper; actual usable current depends on board layout, copper area, and ambient conditions. The linear derating factor is 0.20 W/°C above 25 °C case temperature.

Does IRFR9014NTRR have an integrated body diode, and what are its key parameters?

Yes, IRFR9014NTRR includes an integral body diode formed by the MOSFET's p-n junction. Key parameters include -5.1 A continuous source-drain current, -20 A pulsed rating, -5.5 V forward voltage at -5.1 A and 25 °C, and reverse recovery time of 80–160 ns with 0.096–0.19 μC recovered charge. These values are measured under standardized test conditions defined in the datasheet.

Can IRFR9014NTRR be used in avalanche mode, and what are its repetitive avalanche ratings?

Yes, IRFR9014NTRR is explicitly rated for repetitive avalanche operation. Its datasheet specifies repetitive avalanche current I_AR = -5.1 A and repetitive avalanche energy E_AR = 2.5 mJ, both tested under defined pulse conditions (pulse width limited by junction temperature). This capability allows safe operation during inductive load switching without external snubbers in many designs.

What is the gate threshold voltage range for IRFR9014NTRR, and how does it affect drive requirements?

The gate threshold voltage V_GS(th) for IRFR9014NTRR is specified from -2.0 V to -4.0 V at I_D = -250 μA. This range ensures reliable turn-on with -10 V gate drive while preventing accidental activation from noise or leakage. Designers must ensure gate drive reaches at least -4.0 V to guarantee full enhancement and minimal R_DS(on); logic-level compatibility is not claimed.

Is IRFR9014NTRR RoHS-compliant and halogen-free?

IRFR9014NTRR carries the "PbF" suffix indicating lead-free termination, and Vishay documentation confirms it meets RoHS Directive 2011/65/EU. However, halogen-free status is not assigned to the "PbF" variant; for halogen-free compliance, the SiHFR9014-GE3 (with "-GE3" suffix) is the designated equivalent part per Vishay's material categorization guide.

IRFR9014NTRR Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 5.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR9014NTRR FAQ

1.How can I place an order for IRFR9014NTRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9014NTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9014NTRR reliable?

The price and inventory of IRFR9014NTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9014NTRR is usually 5 days.

3.What payment methods are accepted for IRFR9014NTRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9014NTRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9014NTRR?

IRFR9014NTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9014NTRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9014NTRR?

For technical support, including IRFR9014NTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9014NTRR requirements.

6.How does Aetrix verify that IRFR9014NTRR is sourced from the original manufacturer or authorized distributors?

All IRFR9014NTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9014NTRR meets industry standards.

7.What is the process for return or replacement of IRFR9014NTRR?

All IRFR9014NTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9014NTRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9014NTRR part is unused and in its original packaging.

Return procedure for IRFR9014NTRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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