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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR9014PBF-BE3

Name: IRFR9014PBF-BE3
Brand: Vishay Siliconix
SKU: IRFR9014PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR9014PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9014PBF-BE3.pdf

Description:: P-CHANNEL 60V

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Product details

Overview

IRFR9014PBF-BE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -60 V drain-source voltage, 0.50 Ω R_DS(on) at V_GS = -10 V, and -5.1 A continuous drain current at T_C = 25 °C. It supports fast switching, repetitive avalanche operation, and is optimized for DC-DC converters, load switching, and reverse polarity protection circuits.

For engineers reviewing the IRFR9014PBF-BE3 datasheet, IRFR9014PBF-BE3 pinout, IRFR9014PBF-BE3 application, or IRFR9014PBF-BE3 equivalent, key selection criteria include its -60 V V_DS, 0.50 Ω on-resistance, 12 nC total gate charge, DPAK thermal performance (R_thJC = 5.0 °C/W), and verified repetitive avalanche capability (E_AS = 140 mJ).

Technical Context

This device uses third-generation trench-gate silicon technology to achieve low R_DS(on) while maintaining ruggedness against unclamped inductive switching. Its gate threshold voltage range of -2.0 V to -4.0 V ensures reliable turn-on with standard -10 V gate drive and partial compatibility with logic-level controllers.

The integrated body diode exhibits 80–160 ns reverse recovery time and 0.096–0.19 μC Q_rr, supporting moderate-frequency synchronous rectification. Thermal design leverages the DPAK's low junction-to-case resistance (5.0 °C/W) and PCB-mount power dissipation up to 2.5 W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum blocking voltage in high-side switch or reverse-polarity protection configurations
R_DS(on)	0.50 Ω @ V_GS = -10 V - Enables <1.6 W conduction loss at -3.1 A, suitable for 5–12 V rail switching
I_D (cont.)	-5.1 A @ T_C = 25 °C - Supports medium-current loads without forced cooling in compact layouts
Q_g	12 nC - Determines gate driver strength requirement; compatible with low-power drivers like TC4427
E_AS	140 mJ - Withstands single-pulse inductive energy in motor control or solenoid drive without failure
R_thJC	5.0 °C/W - Enables efficient heat transfer to heatsink or copper pour, critical for sustained 2.5 W PCB-mount operation
V_GS(th)	-2.0 to -4.0 V - Ensures full enhancement with -5 V logic-level drive while avoiding spurious turn-on near 0 V

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Receives negative V_GS to modulate channel; requires <12 nC charge for full turn-on
Drain (D)	High-side switched node	Exposed metal tab - must be connected to high-voltage rail or heatsink; electrically tied to internal die drain
Source (S)	Reference node / return path	Connected to system ground or load return; carries full load current and body diode forward current

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports repeated unclamped inductive switching up to I_AR = -5.1 A and E_AR = 2.5 mJ without parameter shift
Dynamic dV/dt rating	-4.5 V/ns - Resists false turn-on during high-speed voltage transients in noisy industrial environments
Fast switching	11 ns turn-on delay + 63 ns rise time - Enables >100 kHz PWM operation in buck regulators and motor drives
P-channel topology	Eliminates need for high-side gate driver bootstrap circuitry in high-side switch applications
Surface-mount (DPAK)	Compatible with vapor-phase and infrared reflow; recommended pad layout per AN826 ensures thermal reliability

Applications

Reverse Polarity Protection	DC-DC Synchronous Rectifier
Use Scenario: Preventing damage from incorrect battery or power supply connection in portable medical devices and automotive accessories. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as ideal diode replacement, conducting only when V_IN polarity is correct. Use Value: Achieves <0.5 V forward drop vs. 0.7 V Schottky, reducing power loss by >30% at 3 A and enabling compact thermal design.	Use Scenario: Secondary-side rectification in isolated 12 V → 3.3 V flyback converters for industrial IoT gateways. IC Role / Device Role / Timing Role: Synchronously commutated P-channel switch replacing output Schottky diode, timed to complement primary-side FET. Use Value: Reduces conduction loss by 40% over 40 V Schottky at 5 A, improving efficiency from 82% to 87% and lowering output ripple.
Motor Control High-Side Switch	Load Switch for 5 V/12 V Rails
Use Scenario: Controlling brushed DC motor direction and braking in HVAC damper actuators using half-bridge topology. IC Role / Device Role / Timing Role: Upper-leg switch in H-bridge, handling bidirectional current and freewheeling via body diode during PWM off-time. Use Value: Body diode t_rr ≤ 160 ns and Q_rr ≤ 0.19 μC minimize switching loss and voltage spikes during commutation.	Use Scenario: Power sequencing and fault-isolated enable/disable of 12 V fan supply and 5 V sensor rails in programmable logic controllers. IC Role / Device Role / Timing Role: Single-pole, single-throw electronic switch controlled by microcontroller GPIO with soft-start via gate resistor. Use Value: R_DS(on) = 0.50 Ω limits voltage drop to <2.5 V at 5 A, ensuring stable downstream rail regulation under full load.

Reverse Polarity Protection

DC-DC Synchronous Rectifier

Use Scenario: Preventing damage from incorrect battery or power supply connection in portable medical devices and automotive accessories.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as ideal diode replacement, conducting only when V_IN polarity is correct.

Use Value: Achieves <0.5 V forward drop vs. 0.7 V Schottky, reducing power loss by >30% at 3 A and enabling compact thermal design.

Use Scenario: Secondary-side rectification in isolated 12 V → 3.3 V flyback converters for industrial IoT gateways.

IC Role / Device Role / Timing Role: Synchronously commutated P-channel switch replacing output Schottky diode, timed to complement primary-side FET.

Use Value: Reduces conduction loss by 40% over 40 V Schottky at 5 A, improving efficiency from 82% to 87% and lowering output ripple.

Motor Control High-Side Switch

Load Switch for 5 V/12 V Rails

Use Scenario: Controlling brushed DC motor direction and braking in HVAC damper actuators using half-bridge topology.

IC Role / Device Role / Timing Role: Upper-leg switch in H-bridge, handling bidirectional current and freewheeling via body diode during PWM off-time.

Use Value: Body diode t_rr ≤ 160 ns and Q_rr ≤ 0.19 μC minimize switching loss and voltage spikes during commutation.

Use Scenario: Power sequencing and fault-isolated enable/disable of 12 V fan supply and 5 V sensor rails in programmable logic controllers.

IC Role / Device Role / Timing Role: Single-pole, single-throw electronic switch controlled by microcontroller GPIO with soft-start via gate resistor.

Use Value: R_DS(on) = 0.50 Ω limits voltage drop to <2.5 V at 5 A, ensuring stable downstream rail regulation under full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR9343TRPbF	-60 V V_DS, 0.35 Ω R_DS(on), 11 nC Q_g, DPAK - lower on-resistance but higher gate charge sensitivity	Better conduction efficiency above 4 A; less tolerant of marginal gate drive due to tighter V_GS(th) distribution	Prefer when minimizing I²R loss dominates; verify gate drive can sustain -10 V under load
SiHFR9014-GE3	Same die, identical specs, Pb-free/halogen-free construction - differs only in RoHS compliance marking and manufacturing location	No functional difference; fully interchangeable in all designs meeting JEDEC TO-252 mechanical and thermal requirements	Select for new designs requiring full halogen-free compliance; legacy IRFR9014PBF-BE3 remains valid for existing BOMs

Compared with IRFR9014PBF-BE3, IRLL9343TRPbF offers lower conduction loss but demands more robust gate drive, while SiHFR9014-GE3 provides identical electrical and thermal behavior with updated environmental compliance - making it a drop-in replacement for new production.

Availability

IRFR9014PBF-BE3 is available at Aetrix Electronics and suitable for reverse polarity protection, DC-DC synchronous rectification, and motor control high-side switching requiring stable component supply across industrial, automotive, and embedded power systems.

Supply support for IRFR9014PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and manufacturability.

The IRFR9014PBF-BE3 belongs to Vishay's third-generation power MOSFET family, engineered for high-reliability power conversion and protection in space-constrained surface-mount applications where avalanche tolerance and thermal stability are critical.

FAQ

What is the maximum continuous drain current rating for IRFR9014PBF-BE3 at 100 °C case temperature?

The IRFR9014PBF-BE3 supports -3.2 A continuous drain current at T_C = 100 °C, reflecting its linear derating factor of 0.20 W/°C from the 25 °C rating of 25 W. This value is confirmed in the Absolute Maximum Ratings table and validated under PCB-mount conditions per note "e" in the datasheet.

Does IRFR9014PBF-BE3 have a specified body diode reverse recovery time?

Yes, the IRFR9014PBF-BE3 body diode reverse recovery time (t_rr) is specified as 80–160 ns at T_J = 25 °C, I_F = -6.7 A, and dI/dt = 100 A/μs. This parameter is critical for synchronous rectifier and H-bridge freewheeling applications and appears in the "Drain-Source Body Diode Characteristics" section.

Is IRFR9014PBF-BE3 pin-compatible with IRFU9014PbF?

No - IRFR9014PBF-BE3 uses the DPAK (TO-252) surface-mount package, while IRFU9014PbF uses the IPAK (TO-251) through-hole package. Although both share identical die characteristics and pin function order (G-D-S), their mechanical footprints, thermal paths, and mounting methods differ and are not interchangeable without PCB redesign.

What is the gate-source threshold voltage range for IRFR9014PBF-BE3?

The gate-source threshold voltage (V_GS(th)) for IRFR9014PBF-BE3 is -2.0 V to -4.0 V at V_DS = V_GS and I_D = -250 μA. This range ensures predictable turn-on with -5 V logic-level drive while preventing accidental activation near 0 V, as documented in the Static Specifications table.

Can IRFR9014PBF-BE3 be used in avalanche mode repeatedly?

Yes - the IRFR9014PBF-BE3 is explicitly rated for repetitive avalanche operation, with I_AR = -5.1 A and E_AR = 2.5 mJ. This capability is validated per Figure 12 and note "a" in the Absolute Maximum Ratings, enabling reliable use in inductive load switching without external snubbers.

IRFR9014PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 5.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

IRFR9014PBF-BE3 FAQ

1.How can I place an order for IRFR9014PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9014PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9014PBF-BE3 reliable?

The price and inventory of IRFR9014PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9014PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFR9014PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9014PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9014PBF-BE3?

IRFR9014PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9014PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9014PBF-BE3?

For technical support, including IRFR9014PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9014PBF-BE3 requirements.

6.How does Aetrix verify that IRFR9014PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFR9014PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9014PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFR9014PBF-BE3?

All IRFR9014PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9014PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9014PBF-BE3 part is unused and in its original packaging.

Return procedure for IRFR9014PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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