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Vishay Siliconix IRFR9014TRPBF-BE3
- Part No.:
- IRFR9014TRPBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9014TRPBF-BE3.pdf
- Description:
- MOSFET P-CH 60V 5.1A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,270
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Product details
Overview
IRFR9014TRPBF-BE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -60 V drain-source voltage, 0.50 Ω RDS(on) at VGS = -10 V, and -5.1 A continuous drain current at TC = 25 °C. It delivers fast switching, repetitive avalanche capability, and dynamic dV/dt rating for robust operation in DC-DC converters and motor control circuits.
For engineers reviewing the IRFR9014TRPBF-BE3 datasheet, IRFR9014TRPBF-BE3 pinout, IRFR9014TRPBF-BE3 application, or IRFR9014TRPBF-BE3 equivalent, key selection criteria include its -60 V VDS, 12 nC total gate charge, 5.1 nC Qgd, thermal resistance of 5.0 °C/W junction-to-case, and suitability for high-side switching in industrial power supplies and battery protection systems.
Technical Context
This device uses third-generation trench-gate silicon technology to achieve low on-resistance while maintaining ruggedness against unclamped inductive switching. Its gate threshold voltage range (-2.0 V to -4.0 V) supports both standard and logic-level drive, and its body diode exhibits 80–160 ns reverse recovery time with 0.096–0.19 μC Qrr.
The IRFR9014TRPBF-BE3 is optimized for surface-mount assembly using vapor-phase or infrared reflow, with thermal performance validated on 1" square FR-4 PCBs. Its maximum junction temperature of +150 °C and -55 °C minimum storage temperature enable use in extended industrial environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - Maximum blocking voltage in high-side P-channel configurations |
| RDS(on) | 0.50 Ω @ VGS = -10 V - Enables <1.6 W conduction loss at -3.2 A (TC = 100 °C) |
| Qg | 12 nC - Determines gate drive energy and switching speed in PWM circuits |
| ID (cont.) | -5.1 A @ TC = 25 °C - Supports medium-power load switching without heatsink in compact layouts |
| EAS | 140 mJ - Withstands single-pulse inductive energy in relay or solenoid drive |
| RthJC | 5.0 °C/W - Enables direct thermal coupling to PCB copper pour or external heatsink |
| dV/dt | -4.5 V/ns - Confirmed immunity to parasitic turn-on in noisy high-dV/dt environments |
Pinout & Package
DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; surface-mount footprint compatible with IPC-7351B standard; recommended minimum pad dimensions per Vishay Application Note 826.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connects to system ground or low-side return path |
| Pin 2 (Gate) | Control input (G) | Receives negative gate voltage relative to source to turn on; requires <±20 V absolute rating |
| Pin 3 (Drain) | Power output (D) | Exposed metal tab - electrically and thermally connected to drain; must be soldered to large copper area |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports reliable operation under repeated inductive switching stress up to IAR = -5.1 A and EAR = 2.5 mJ |
| Dynamic dV/dt rating | Rated -4.5 V/ns - prevents false triggering during fast voltage transients in motor drives |
| Fast switching | Turn-on delay 11 ns, rise time 63 ns - enables >500 kHz PWM in synchronous buck topologies |
| P-channel configuration | Enables high-side switching without level-shifting circuitry in 12 V/24 V industrial systems |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard |
Applications
| Industrial Motor Control | Battery Protection Circuit |
|---|---|
Use Scenario: Driving brushed DC motors in programmable logic controller (PLC) I/O modules with bidirectional current sensing. IC Role / Device Role / Timing Role: High-side P-channel switch controlling motor power rail; operates in linear and saturated modes during startup and braking. Use Value: Low RDS(on) minimizes heat generation during continuous 3.2 A operation at 100 °C case temperature. | Use Scenario: Reverse polarity and overcurrent protection in 24 V lithium-iron-phosphate (LiFePO4) battery packs for telecom backup systems. IC Role / Device Role / Timing Role: Back-to-back configured P-channel MOSFET providing bidirectional blocking and fast fault shutdown. Use Value: Repetitive avalanche rating ensures survival during hot-plug events and load dump transients. |
| DC-DC Converter High-Side Switch | LED Driver Power Stage |
Use Scenario: Synchronous rectification in non-isolated buck converter powering FPGA core voltage rails. IC Role / Device Role / Timing Role: High-side switch in complementary pair with N-channel MOSFET; driven by bootstrap gate driver. Use Value: 12 nC Qg and 5.1 nC Qgd reduce gate drive losses and improve efficiency at 300–600 kHz switching frequencies. | Use Scenario: Constant-current dimming control for high-brightness LED strings in industrial signage and machine vision lighting. IC Role / Device Role / Timing Role: PWM-controlled high-side current limiter regulating LED string current via sense resistor feedback. Use Value: Fast 63 ns rise time and 31 ns fall time support precise 1–10 kHz PWM dimming without visible flicker. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiHFR9014-GE3 | Same die, identical RDS(on), Qg, and avalanche specs; differs only in lead-free/halogen-free marking and manufacturing location | No functional difference; qualified for same automotive and industrial temperature ranges | Select SiHFR9014-GE3 when full compliance with Vishay's "GE3" material categorization is required |
| IRFU9014PbF | Same silicon but IPAK (TO-251) through-hole package; higher RthJA (110 °C/W vs. 50 °C/W PCB mount), no exposed drain pad | Suitable for prototyping or low-volume through-hole assembly; not drop-in compatible due to different footprint and thermal path | Choose IRFU9014PbF only for manual soldering or legacy board designs requiring axial leads |
Compared with IRFR9014TRPBF-BE3, SiHFR9014-GE3 offers identical electrical performance with updated environmental compliance labeling, while IRFU9014PbF trades surface-mount thermal efficiency for through-hole mechanical robustness-neither is pin-compatible, and layout changes are required for substitution.
Availability
IRFR9014TRPBF-BE3 is available at Aetrix Electronics and suitable for industrial motor control, battery management systems, and DC-DC converter designs requiring stable component supply across multi-year production cycles.
Supply support for IRFR9014TRPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and ruggedness.
The IRFR9014TRPBF-BE3 belongs to Vishay's third-generation power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in industrial and automotive power systems where avalanche tolerance and thermal stability are critical.
FAQ
What is the maximum continuous drain current rating for IRFR9014TRPBF-BE3 at 100 °C case temperature?
The IRFR9014TRPBF-BE3 supports -3.2 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package mounted on standard PCBs; actual current capability may increase with enhanced heatsinking. The IRFR9014TRPBF-BE3 maintains safe operation within its SOA curve up to this limit.
Does IRFR9014TRPBF-BE3 have a built-in body diode, and what are its key parameters?
Yes, the IRFR9014TRPBF-BE3 integrates a body diode with -5.1 A continuous forward current rating, -5.5 V forward voltage at -5.1 A and 25 °C, and 80–160 ns reverse recovery time. Its Qrr is 0.096–0.19 μC, enabling use in freewheeling and synchronous rectification roles. The IRFR9014TRPBF-BE3 body diode is intrinsic to the MOSFET structure and does not require external components.
Is IRFR9014TRPBF-BE3 suitable for logic-level gate drive applications?
The IRFR9014TRPBF-BE3 has a gate threshold voltage range of -2.0 V to -4.0 V, making it compatible with logic-level drivers that provide -5 V gate drive. However, full RDS(on) specification (0.50 Ω) requires VGS = -10 V; at -5 V, RDS(on) increases significantly. For true logic-level operation, consider dedicated -4.5 V VGS(th) variants-not the IRFR9014TRPBF-BE3.
What is the thermal resistance from junction to ambient for IRFR9014TRPBF-BE3 in typical surface-mount applications?
In standard surface-mount configuration on a 1" square FR-4 PCB, the IRFR9014TRPBF-BE3 exhibits RthJA = 50 °C/W. This value assumes proper copper pour under the exposed drain pad and conforms to Vishay's test conditions. Without thermal enhancement, RthJA degrades to 110 °C/W-so PCB layout directly impacts thermal performance of the IRFR9014TRPBF-BE3.
Can IRFR9014TRPBF-BE3 be used in avalanche mode, and what are the limits?
Yes, the IRFR9014TRPBF-BE3 is repetitively avalanche rated: IAR = -5.1 A and EAR = 2.5 mJ per pulse, with pulse width limited by junction temperature. Single-pulse avalanche energy is 140 mJ. Operation beyond these limits risks parametric shift or failure. All avalanche testing for the IRFR9014TRPBF-BE3 follows the conditions in Figure 12 of the datasheet.
IRFR9014TRPBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 500mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 270 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
IRFR9014TRPBF-BE3 FAQ
1.How can I place an order for IRFR9014TRPBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9014TRPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9014TRPBF-BE3 reliable?
The price and inventory of IRFR9014TRPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9014TRPBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFR9014TRPBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9014TRPBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9014TRPBF-BE3?
IRFR9014TRPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9014TRPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9014TRPBF-BE3?
For technical support, including IRFR9014TRPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9014TRPBF-BE3 requirements.
6.How does Aetrix verify that IRFR9014TRPBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFR9014TRPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9014TRPBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFR9014TRPBF-BE3?
All IRFR9014TRPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9014TRPBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9014TRPBF-BE3 part is unused and in its original packaging.
Return procedure for IRFR9014TRPBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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