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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR9014TRR

Name: IRFR9014TRR
Brand: Vishay Siliconix
SKU: IRFR9014TRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR9014TRR

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9014TRR.pdf

Description:: MOSFET P-CH 60V 5.1A DPAK

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Product details

Overview

IRFR9014 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -60 V drain-source voltage, 0.50 Ω R_DS(on) at V_GS = -10 V, and -5.1 A continuous drain current at T_C = 25 °C. It supports fast switching, repetitive avalanche operation, and is optimized for DC-DC converters, load switching, and reverse polarity protection circuits.

For engineers reviewing the IRFR9014 datasheet, IRFR9014 pinout, IRFR9014 application, or IRFR9014 equivalent, key selection criteria include its -60 V V_DS, low gate charge (12 nC), ruggedized avalanche rating (140 mJ single-pulse), and thermal performance on PCB mount (R_thJA = 50 °C/W).

Technical Context

This device employs third-generation trench-gate silicon technology to achieve low on-resistance with high dV/dt immunity (-4.5 V/ns peak diode recovery). Its gate threshold voltage range of -2.0 V to -4.0 V ensures reliable turn-on with standard logic-level drive while maintaining noise margin.

The integrated body diode features 80–160 ns reverse recovery time and 0.096–0.19 μC Q_rr, enabling efficient synchronous rectification and unclamped inductive switching. Thermal design is supported by a junction-to-case resistance of 5.0 °C/W and defined PCB-mount derating (0.020 W/°C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum blocking voltage for high-side switch or reverse polarity protection in 48 V systems.
R_DS(on) @ V_GS = -10 V	0.50 Ω - Enables <1.6 W conduction loss at -3.1 A, suitable for compact thermal designs.
Q_g	12 nC - Low total gate charge reduces driver power requirement and enables >1 MHz switching in hard-switched topologies.
I_D (continuous, T_C = 25 °C)	-5.1 A - Sustains full-rated current with heatsink or copper pour; derates linearly to -3.2 A at 100 °C case temperature.
E_AS	140 mJ - Single-pulse avalanche energy rating allows safe operation under inductive turn-off stress without external snubbers.
R_thJA (PCB mount)	50 °C/W - Achievable with 1"² FR-4 copper area; defines maximum ambient temperature for 2.5 W dissipation at T_J = 150 °C.
V_GS(th)	-2.0 to -4.0 V - Ensures robust turn-on with -5 V logic drive while avoiding false triggering from noise.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. Standard lead finish is Pb-free and halogen-free (GE3 suffix). Dimensions per Vishay document 71197 (Version 1 & 2); thermal pad requires recommended minimum solder mask opening per Application Note 826.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Reference node for gate drive; connects to system ground or low-side return path.
Pin 2 (Gate)	Gate terminal (G)	Control input; requires ≤±20 V drive; 3.8 nC gate-source charge defines Miller plateau timing.
Pin 3 (Drain)	Drain terminal (D)	High-side switching node; electrically and thermally connected to exposed backside metal pad.

Key Features

Feature	Design Value
P-channel enhancement mode	Enables high-side switching without level-shifting circuitry; simplifies buck converter and OR-ing controller designs.
Repetitive avalanche rated	Supports ≥2.5 mJ repetitive avalanche energy, allowing reliable operation in flyback or boost converters with leakage inductance.
Dynamic dV/dt immunity	-4.5 V/ns rated peak diode recovery dV/dt prevents spurious turn-on during fast voltage transients in motor drives.
Low Q_gd/Q_g ratio	5.1/12 = 42.5% - Reduces Miller effect, improving switching controllability and reducing EMI in high-frequency SMPS.
Fast switching times	11 ns turn-on delay + 63 ns rise time at R_g = 24 Ω - Enables efficient operation up to 500 kHz in synchronous rectifiers.

Applications

DC-DC Buck Converter High-Side Switch	Reverse Polarity Protection
Use Scenario: Used as high-side switch in non-synchronous buck regulator for industrial 24–48 V input supplies. IC Role / Device Role / Timing Role: P-channel MOSFET configured as upper switch; controlled by PWM signal referenced to input rail. Use Value: -60 V V_DS and 0.50 Ω R_DS(on) enable >92% efficiency at 3 A output with minimal thermal footprint on 1"² PCB.	Use Scenario: Placed in series with power input to protect downstream circuitry from incorrect battery or adapter connection. IC Role / Device Role / Timing Role: Reverse-blocking switch; conducts only when polarity is correct; no active control required. Use Value: Body diode forward drop of -5.5 V at -5.1 A ensures low-loss conduction; -60 V rating covers surge transients per ISO 7637-2.
Motor Drive Half-Bridge Upper Arm	Hot-Swap OR-ing Controller
Use Scenario: Upper transistor in H-bridge for 24 V brushed DC motor control in robotics and actuation systems. IC Role / Device Role / Timing Role: High-side switch driven by bootstrap or isolated gate driver; handles bidirectional current during PWM commutation. Use Value: 140 mJ E_AS withstands inductive kickback during freewheeling; 80–160 ns t_rr minimizes cross-conduction losses.	Use Scenario: Parallel power path selector in redundant 12 V or 24 V supply systems for telecom and server applications. IC Role / Device Role / Timing Role: Active OR-ing FET replacing Schottky diodes; controlled by dedicated OR-ing controller IC. Use Value: 0.50 Ω R_DS(on) cuts conduction loss by >70% vs. 40 mΩ Schottky, reducing heat sink size and improving system efficiency.

DC-DC Buck Converter High-Side Switch

Reverse Polarity Protection

Use Scenario: Used as high-side switch in non-synchronous buck regulator for industrial 24–48 V input supplies.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as upper switch; controlled by PWM signal referenced to input rail.

Use Value: -60 V V_DS and 0.50 Ω R_DS(on) enable >92% efficiency at 3 A output with minimal thermal footprint on 1"² PCB.

Use Scenario: Placed in series with power input to protect downstream circuitry from incorrect battery or adapter connection.

IC Role / Device Role / Timing Role: Reverse-blocking switch; conducts only when polarity is correct; no active control required.

Use Value: Body diode forward drop of -5.5 V at -5.1 A ensures low-loss conduction; -60 V rating covers surge transients per ISO 7637-2.

Motor Drive Half-Bridge Upper Arm

Hot-Swap OR-ing Controller

Use Scenario: Upper transistor in H-bridge for 24 V brushed DC motor control in robotics and actuation systems.

IC Role / Device Role / Timing Role: High-side switch driven by bootstrap or isolated gate driver; handles bidirectional current during PWM commutation.

Use Value: 140 mJ E_AS withstands inductive kickback during freewheeling; 80–160 ns t_rr minimizes cross-conduction losses.

Use Scenario: Parallel power path selector in redundant 12 V or 24 V supply systems for telecom and server applications.

IC Role / Device Role / Timing Role: Active OR-ing FET replacing Schottky diodes; controlled by dedicated OR-ing controller IC.

Use Value: 0.50 Ω R_DS(on) cuts conduction loss by >70% vs. 40 mΩ Schottky, reducing heat sink size and improving system efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR9343PbF	-60 V V_DS, 0.35 Ω R_DS(on), 11 nC Q_g, DPAK package	Lower R_DS(on) improves conduction efficiency but increases gate drive demand slightly	Preferred where <0.4 Ω on-resistance is critical and gate drive capability supports 11 nC charge
SiHFR9014-GE3	Same die, identical specs, Pb-free/halogen-free construction, GE3 suffix denotes Vishay's alternate manufacturing location	No functional difference; qualified for same automotive and industrial applications	Drop-in replacement with identical thermal, electrical, and mechanical behavior; preferred for RoHS-compliant BOMs

Compared with IRFR9014, the IRLR9343PbF offers lower conduction loss at the cost of marginally higher gate drive power, while the SiHFR9014-GE3 is a functionally identical, environmentally compliant variant-making it ideal for new designs requiring halogen-free compliance without layout or qualification changes.

Availability

IRFR9014 is available at Aetrix Electronics and suitable for DC-DC converters, reverse polarity protection circuits, and motor drive half-bridges requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFR9014 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-efficiency power conversion.

The IRFR9014 belongs to Vishay's third-generation power MOSFET family, engineered for fast switching, low on-resistance, and robust avalanche performance in surface-mount power management applications.

FAQ

What is the maximum continuous drain current for IRFR9014 at 100 °C case temperature?

The IRFR9014 supports -3.2 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating follows a linear factor of 0.20 W/°C above 25 °C, ensuring safe operation within its 150 °C maximum junction temperature limit. The IRFR9014 must be mounted on adequate copper area or heatsink to maintain this rating in sustained high-power conditions.

Does IRFR9014 have avalanche capability, and how is it specified?

Yes, the IRFR9014 is repetitively avalanche rated with 2.5 mJ EAR and single-pulse rated for 140 mJ EAS under defined test conditions (V_DD = -25 V, L = 6.3 mH, R_g = 25 Ω, I_AS = -5.1 A). This capability is confirmed in Vishay document 91277, Figure 12 and associated notes, making IRFR9014 suitable for inductive switching without external clamping in many power supply and motor control designs.

What is the gate threshold voltage range for IRFR9014, and why does it matter?

The IRFR9014 has a gate threshold voltage (V_GS(th)) range of -2.0 V to -4.0 V at I_D = -250 μA. This range ensures reliable turn-on with -5 V logic-level drive while providing sufficient noise margin against false triggering in noisy industrial environments. The IRFR9014's threshold stability across temperature also supports consistent switching behavior in wide-temperature applications.

Can IRFR9014 be used in surface-mount reflow processes, and what are the thermal pad requirements?

Yes, the IRFR9014 in DPAK (TO-252) package is qualified for vapor phase, infrared, and wave soldering. Vishay Application Note 826 specifies recommended minimum PCB pads: 0.224" × 0.180" (5.69 mm × 4.57 mm) for the source pad and 0.243" × 0.087" (6.18 mm × 2.20 mm) for the drain thermal pad. Proper thermal pad design is essential to achieve the stated R_thJA = 50 °C/W on PCB mount.

How does the body diode performance of IRFR9014 impact its use in synchronous rectification?

The IRFR9014 body diode exhibits t_rr = 80–160 ns and Q_rr = 0.096–0.19 μC at T_J = 25 °C, enabling efficient synchronous rectification in buck converters up to ~300 kHz. Its V_SD = -5.5 V at -5.1 A ensures low forward conduction loss during dead-time, and the fast recovery minimizes reverse recovery spikes-critical for EMI control. These parameters are measured per Vishay document 91277, Section "Drain-Source Body Diode Characteristics".

IRFR9014TRR Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 5.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR9014TRR FAQ

1.How can I place an order for IRFR9014TRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9014TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9014TRR reliable?

The price and inventory of IRFR9014TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9014TRR is usually 5 days.

3.What payment methods are accepted for IRFR9014TRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9014TRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9014TRR?

IRFR9014TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9014TRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9014TRR?

For technical support, including IRFR9014TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9014TRR requirements.

6.How does Aetrix verify that IRFR9014TRR is sourced from the original manufacturer or authorized distributors?

All IRFR9014TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9014TRR meets industry standards.

7.What is the process for return or replacement of IRFR9014TRR?

All IRFR9014TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9014TRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9014TRR part is unused and in its original packaging.

Return procedure for IRFR9014TRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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