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Vishay Siliconix IRFR9020PBF
- Part No.:
- IRFR9020PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9020PBF.pdf
- Description:
- MOSFET P-CH 50V 9.9A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,087
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Product details
Overview
IRFR9020PBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -50 V VDS, 0.28 Ω RDS(on) at VGS = -10 V, and -9.9 A continuous drain current at TC = 25 °C. It delivers robust avalanche capability (EAS = 250 mJ), fast switching (tr = 57–66 ns), and low gate charge (Qg = 9.4–14 nC), making it suitable for DC/DC converter high-side switches and reverse polarity protection circuits.
For engineers reviewing the IRFR9020PBF datasheet, IRFR9020PBF pinout, IRFR9020PBF application, or IRFR9020PBF equivalent, key selection considerations include its -50 V blocking voltage, thermal resistance RthJC = 3.0 °C/W, body diode recovery time (trr = 56–280 ns), repetitive avalanche rating (IAR = -9.9 A), and compatibility with standard PCB layout practices for DPAK thermal pads.
Technical Context
This device employs planar V-groove trench technology to achieve low on-resistance while maintaining high transconductance (gfs = 2.3–3.5 S) and stable threshold voltage (VGS(th) = -2.0 to -4.0 V). Its internal structure integrates a fast-recovery body diode with Qrr = 0.17–0.85 nC and dV/dt immunity up to 5.8 V/ns.
The IRFR9020PBF operates as a voltage-controlled unidirectional switch with gate drive compatible with standard logic-level (-10 V) or partially enhanced (-5 V) drivers. Its SOA curve supports pulsed operation up to IDM = -40 A under defined conditions, and its RthJA = 110 °C/W enables use on FR-4 PCBs without forced airflow.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -50 V - Maximum reverse drain-source blocking voltage before breakdown |
| RDS(on) | 0.20–0.28 Ω at VGS = -10 V, ID = 5.7 A - Directly determines conduction loss and junction temperature rise under load |
| ID (continuous) | -9.9 A at TC = 25 °C - Specifies maximum steady-state current with heatsink at case temperature |
| Qg | 9.4–14 nC - Total gate charge required for full turn-on; defines driver strength and switching loss |
| EAS | 250 mJ - Single-pulse avalanche energy rating; enables reliable operation under inductive switching stress |
| tr/tf | 57–66 ns / 25–38 ns - Rise/fall times at VDD = -25 V, Rg = 18 Ω - Determines minimum achievable switching frequency and EMI profile |
| RthJC | 3.0 °C/W - Junction-to-case thermal resistance; critical for calculating die temperature from measured case temperature |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction and mechanical anchoring. Dimensions per JEDEC outline: 6.095 mm × 6.54 mm × 2.285 mm (L × W × H); recommended copper pad area ≥ 10.668 mm × 5.690 mm per Application Note 826.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control electrode; requires ≤ ±20 V drive; input capacitance Ciss = 490 pF defines Miller effect and gate drive loop stability |
| Pin 2 (D) | Drain | Main power terminal; electrically connected to exposed thermal pad; carries full load current and dissipates switching/conduction losses |
| Pin 3 (S) | Source | Reference node for gate drive and current sensing; body diode anode; source inductance LS = 7.5 nH affects switching transient ringing |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rating | IAR = -9.9 A enables reliable operation in inductive load switching without external snubbers |
| Dynamic dV/dt immunity | 5.8 V/ns prevents false turn-on during high-slew-rate voltage transients across drain-source |
| Low gate charge | Qg = 9.4–14 nC reduces driver power consumption and allows use of low-cost gate drivers |
| Enhanced body diode performance | trr = 56–280 ns and Qrr = 0.17–0.85 nC minimize reverse recovery losses in synchronous rectification |
| Surface-mount packaging | DPAK (TO-252) enables automated assembly and reduces PCB parasitic inductance vs. through-hole alternatives |
Applications
| DC/DC Converter High-Side Switch | Reverse Polarity Protection |
|---|---|
Use Scenario: Used in non-isolated buck converters where the P-channel MOSFET operates as a high-side switch controlling input rail delivery to downstream regulation stages. IC Role / Device Role / Timing Role: Power switching element; conducts during PWM on-time and blocks during off-time; timing governed by external controller's gate drive waveform. Use Value: Low RDS(on) minimizes conduction loss at 5–12 V input rails; fast tr/tf supports >100 kHz switching frequencies without excessive driver loss. |
Use Scenario: Placed in series with VIN to block reverse-connected power sources in battery-powered industrial sensors and portable test equipment. IC Role / Device Role / Timing Role: Unidirectional current valve; remains off when input polarity is inverted; no active control signal required. Use Value: -50 V VDS rating provides margin against surge events; low leakage IDSS ≤ 250 μA preserves standby battery life. |
| Motor Driver Half-Bridge Top Switch | Hot-Swap Controller Back-Drive Limiter |
Use Scenario: Integrated into brushed DC motor driver ICs or discrete half-bridge modules to control direction and speed via PWM modulation. IC Role / Device Role / Timing Role: High-side power switch; synchronized with low-side N-MOSFET using dead-time control to prevent shoot-through. Use Value: Repetitive avalanche rating handles inductive kickback during commutation; RthJC = 3.0 °C/W supports thermal management in compact motor control enclosures. |
Use Scenario: Employed in hot-swap controllers to limit back-drive current from powered-backplane loads during card insertion/removal. IC Role / Device Role / Timing Role: Controlled current limiter; gate driven by dedicated hot-swap controller to regulate inrush and fault current. Use Value: Body diode forward voltage VSD ≤ -6.3 V at -9.9 A ensures minimal forward drop during back-drive events; Qgd = 4.3–6.5 nC enables precise current-limit loop response. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR9024PBF | VDS = -60 V, RDS(on) = 0.33 Ω at VGS = -10 V, Qg = 16 nC - higher voltage rating but higher on-resistance and gate charge | Better suited for 24–48 V systems requiring extended blocking margin; less efficient at 12 V due to higher RDS(on) | Select IRFR9024PBF only if system VIN exceeds 30 V or transient overvoltage >40 V is expected. |
| SiHFR9020-GE3 | Identical electrical specs and DPAK footprint; halogen-free, lead-free construction per RoHS; same RDS(on), Qg, and avalanche ratings | No functional difference; designed for identical applications including DC/DC converters and reverse protection | SiHFR9020-GE3 is a direct material-compliance alternative; preferred for new designs targeting RoHS 2011/65/EU compliance. |
Compared with IRFR9020PBF, IRFR9024PBF trades higher voltage headroom for increased conduction and switching losses, while SiHFR9020-GE3 maintains identical performance with updated environmental compliance-making it the optimal drop-in replacement for RoHS-aligned production.
Availability
IRFR9020PBF is available at Aetrix Electronics and suitable for DC/DC converters, reverse polarity protection circuits, and motor driver half-bridges requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IRFR9020PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and application-specific optimization.
The IRFR9020PBF belongs to Vishay's "TrenchFET® Gen II" P-channel power MOSFET family, engineered for high-efficiency, high-density power conversion in space-constrained industrial and computing applications.
FAQ
What is the maximum gate-source voltage rating for IRFR9020PBF?
The IRFR9020PBF has a maximum gate-source voltage rating of ±20 V. Exceeding this limit risks permanent gate oxide damage. For reliable operation, gate drive circuits must clamp VGS within this range-especially during fast switching transitions where Miller-induced overshoot may occur. The IRFR9020PBF datasheet specifies this absolute maximum rating under all operating conditions.
Can IRFR9020PBF be used in linear (analog) mode operation?
The IRFR9020PBF is not characterized or guaranteed for sustained linear-mode operation. Its Safe Operating Area (SOA) curve shows limited capability beyond short pulses, and thermal runaway risk increases significantly above VDS > 10 V and ID > 3 A in linear region. For analog applications, Vishay recommends dedicated linear MOSFETs such as the SiHFU9020 with validated SOA data. The IRFR9020PBF is optimized for switching use only.
What is the typical body diode forward voltage of IRFR9020PBF at -9.9 A?
The typical body diode forward voltage (VSD) of the IRFR9020PBF is -6.3 V at TJ = 25 °C and IS = -9.9 A with VGS = 0 V. This value reflects the intrinsic P-N junction drop of the integrated source-drain diode and directly impacts conduction loss during freewheeling intervals in buck or half-bridge topologies. The IRFR9020PBF datasheet lists this parameter in the "Drain-source body diode characteristics" table.
Does IRFR9020PBF require a heatsink in typical applications?
The IRFR9020PBF can operate without an external heatsink when dissipating ≤ 1.5 W continuously on a 1" square FR-4 PCB with 2 oz copper, based on RthJA = 110 °C/W. For higher power levels-such as 5 W conduction loss-the junction temperature exceeds safe limits without thermal enhancement. The IRFR9020PBF's exposed drain pad must be soldered to a minimum 10.668 mm × 5.690 mm copper area per Vishay Application Note 826 to achieve rated performance.
How does the avalanche rating of IRFR9020PBF compare between single-pulse and repetitive modes?
The IRFR9020PBF supports 250 mJ single-pulse avalanche energy (EAS) but only 4.2 mJ repetitive avalanche energy (EAR). This reflects thermal limitations: repetitive events accumulate heat faster than the package can dissipate. The IRFR9020PBF datasheet specifies that repetitive avalanche is pulse-width limited by junction temperature (see Fig. 16), requiring strict duty-cycle control below 2% for safe operation. Designers must verify thermal design margins before relying on repetitive avalanche capability.
IRFR9020PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 50 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 280mOhm @ 5.7A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 490 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR9020PBF FAQ
1.How can I place an order for IRFR9020PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9020PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9020PBF reliable?
The price and inventory of IRFR9020PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9020PBF is usually 5 days.
3.What payment methods are accepted for IRFR9020PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9020PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9020PBF?
IRFR9020PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9020PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9020PBF?
For technical support, including IRFR9020PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9020PBF requirements.
6.How does Aetrix verify that IRFR9020PBF is sourced from the original manufacturer or authorized distributors?
All IRFR9020PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9020PBF meets industry standards.
7.What is the process for return or replacement of IRFR9020PBF?
All IRFR9020PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9020PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9020PBF part is unused and in its original packaging.
Return procedure for IRFR9020PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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