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Vishay Siliconix IRFR9020TR
- Part No.:
- IRFR9020TR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9020TR.pdf
- Description:
- MOSFET P-CH 50V 9.9A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,302
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Product details
Overview
IRFR9020TR from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -50 V VDS, 0.28 Ω RDS(on) at VGS = -10 V, and -9.9 A continuous drain current at TC = 25 °C. It delivers robust avalanche capability (EAS = 250 mJ), fast switching (tr = 57–66 ns), and low gate charge (Qg = 14 nC max), making it suitable for DC/DC converter high-side switches and reverse polarity protection circuits.
For engineers reviewing the IRFR9020TR datasheet, IRFR9020TR pinout, IRFR9020TR application, or IRFR9020TR equivalent, this page provides verified electrical parameters, thermal resistance data (RthJC = 3.0 °C/W), diode recovery characteristics (trr = 56–280 ns), and validated alternative parts for industrial power management design.
Technical Context
This device employs planar vertical DMOS technology optimized for low RDS(on) and high transconductance (gfs = 2.3–3.5 S), with integrated body diode exhibiting VSD = -6.3 V at IS = -9.9 A and Qrr = 0.17–0.85 nC. Its gate threshold voltage (VGS(th) = -2.0 to -4.0 V) ensures reliable turn-on with standard -10 V logic-level drive.
The IRFR9020TR operates across -55 to +150 °C junction temperature range, supports repetitive avalanche (IAR = -9.9 A), and features dV/dt immunity up to 5.8 V/ns. Its DPAK package enables low-stray-inductance PCB layout critical for high-frequency switching in compact power supplies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -50 V - Maximum blocking voltage for high-side switch applications up to 40 V bus systems |
| RDS(on) @ VGS = -10 V | 0.28 Ω max - Enables <1.5 W conduction loss at 9.9 A, reducing heatsink requirements |
| ID (continuous) | -9.9 A @ TC = 25 °C - Supports medium-power loads without forced air cooling |
| Qg | 14 nC max - Allows efficient gate driving with low-current controllers (e.g., microcontroller GPIO) |
| tr/tf | 57–66 ns / 25–38 ns - Enables >500 kHz switching in synchronous buck converters |
| EAS | 250 mJ - Withstands unclamped inductive energy during fault conditions without failure |
| RthJC | 3.0 °C/W max - Permits direct thermal coupling to copper pour or heatsink for stable thermal operation |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad on bottom side for thermal and electrical connection; dimensions per JEDEC outline: 6.095 mm × 6.54 mm × 1.78 mm (L × W × H); recommended minimum PCB pad: 6.18 mm × 4.57 mm for drain tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connects to system ground or low-side return path |
| Pin 2 (Gate) | Control input (G) | High-impedance voltage-controlled terminal requiring ≤500 nA leakage current |
| Pin 3 (Drain) | Power output (D) | Exposed metal pad on underside - must be soldered to large copper area for thermal and current handling |
Key Features
| Feature | Design Value |
|---|---|
| Surface-mountable DPAK | Eliminates through-hole assembly; reduces board space and parasitic inductance vs. TO-220 |
| Repetitive avalanche rating | Enables rugged operation in inductive load switching (e.g., solenoid drivers) without external snubbers |
| Dynamic dV/dt immunity | 5.8 V/ns tolerance prevents false turn-on during high-speed voltage transients in noisy environments |
| Low gate charge (Qg) | Reduces gate driver power dissipation and simplifies drive circuitry in battery-powered systems |
| Integrated body diode | Supports freewheeling in buck converters and reverse-polarity protection without discrete diode |
Applications
| DC/DC Converter High-Side Switch | Reverse Polarity Protection |
|---|---|
|
Use Scenario: Used as high-side switch in non-synchronous buck converter supplying 3.3 V/5 V to microcontrollers and sensors from 12 V automotive or industrial rail. IC Role / Device Role / Timing Role: Power MOSFET controlling main power path; switched at 250–500 kHz with gate driven by dedicated controller IC. Use Value: Low RDS(on) minimizes conduction loss (<1.2 W at 8 A), while fast tr/tf enables high efficiency at elevated frequencies. |
Use Scenario: Placed in series with VIN to block reverse voltage in portable medical devices powered by interchangeable Li-ion packs. IC Role / Device Role / Timing Role: Unidirectional power switch activated only when polarity is correct; remains static during normal operation. Use Value: Body diode forward drop (VSD = -6.3 V) is irrelevant here; low RDS(on) ensures <50 mV drop at 1 A, preserving battery runtime. |
| Motor Driver Half-Bridge Top Switch | Hot-Swap Controller |
|
Use Scenario: Upper transistor in half-bridge driving 24 V brushed DC motor in factory automation actuators. IC Role / Device Role / Timing Role: High-side switch synchronized with low-side N-MOSFET; requires bootstrap or isolated gate drive. Use Value: Avalanche rating (EAS = 250 mJ) absorbs inductive kickback during PWM dead-time, preventing voltage spikes above -50 V. |
Use Scenario: In-line power switch enabling safe insertion/removal of PCIe cards or modular I/O boards in telecom servers. IC Role / Device Role / Timing Role: Controlled soft-start switch limiting inrush current; gate slew rate managed via RC network. Use Value: Gate threshold (-2.0 to -4.0 V) allows precise turn-on control with analog biasing, avoiding snap-on behavior during hot-plug events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR9024TRPbF | VDS = -60 V, RDS(on) = 0.33 Ω @ -10 V, Qg = 12 nC - higher voltage rating but higher on-resistance | Better suited for 48 V industrial buses where -50 V margin is insufficient | Select IRFR9024TRPbF only if system VIN exceeds 40 V; otherwise IRFR9020TR offers lower conduction loss. |
| SiHFR9020-GE3 | Identical electrical specs and DPAK package; differs only in Vishay's internal part numbering and halogen-free compliance (GE3 suffix) | No functional difference; accepted interchangeably in RoHS-compliant manufacturing lines | SiHFR9020-GE3 is a direct material-equivalent option with identical performance and footprint - ideal for dual-sourcing. |
Compared with IRFR9024TRPbF, the IRFR9020TR delivers 15% lower RDS(on) at -10 V for improved efficiency in 12–24 V systems, while SiHFR9020-GE3 provides identical electrical behavior with enhanced environmental compliance - both alternatives require no PCB redesign but differ in voltage margin and regulatory documentation.
Availability
IRFR9020TR is available at Aetrix Electronics and suitable for DC/DC converters, reverse polarity protection circuits, and motor driver half-bridges requiring stable component supply across industrial, automotive, and embedded power designs.
Supply support for IRFR9020TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The IRFR9020TR belongs to Vishay's "TrenchFET® Gen II" P-channel MOSFET family, engineered for low RDS(on) and high avalanche ruggedness in surface-mount power switching applications.
FAQ
What is the maximum continuous drain current for IRFR9020TR at 100 °C case temperature?
The IRFR9020TR supports -6.3 A continuous drain current at TC = 100 °C, derated linearly from -9.9 A at 25 °C using the 0.33 W/°C factor. This value is confirmed in the Absolute Maximum Ratings table of Vishay document 90350 and reflects real thermal limits under sustained conduction without forced cooling.
Does IRFR9020TR have a specified body diode reverse recovery time (trr)?
Yes, the IRFR9020TR specifies trr = 56–280 ns (typ./max.) at TJ = 25 °C, IF = -9.7 A, and dI/dt = 100 A/μs. This parameter is measured per standard unclamped inductive test conditions and directly impacts switching loss in freewheeling applications like buck converters.
Is IRFR9020TR pin-compatible with IRFU9020?
No - IRFR9020TR uses DPAK (TO-252) packaging with three gull-wing surface-mount leads, while IRFU9020 uses IPAK (TO-251) with straight leads. Though electrically identical, their footprints and mounting methods differ; PCB layout must be redesigned to substitute one for the other.
What is the gate-source leakage current specification for IRFR9020TR?
The IRFR9020TR has a gate-source leakage current (IGSS) of ±500 nA maximum at VGS = ±20 V, as stated in the Static Specifications table of Vishay document 90350. This low leakage ensures minimal gate drive current demand and stable turn-off behavior in high-impedance control circuits.
Can IRFR9020TR be used in avalanche mode for energy clamping?
Yes - the IRFR9020TR is explicitly rated for repetitive avalanche with IAR = -9.9 A and EAR = 4.2 mJ, and single-pulse avalanche energy EAS = 250 mJ. These values are validated per Vishay's test conditions (VDD = -25 V, L = 5.1 mH, Rg = 25 Ω) and support controlled clamping in inductive switching applications.
IRFR9020TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 50 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 280mOhm @ 5.7A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 490 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR9020TR FAQ
1.How can I place an order for IRFR9020TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9020TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9020TR reliable?
The price and inventory of IRFR9020TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9020TR is usually 5 days.
3.What payment methods are accepted for IRFR9020TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9020TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9020TR?
IRFR9020TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9020TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9020TR?
For technical support, including IRFR9020TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9020TR requirements.
6.How does Aetrix verify that IRFR9020TR is sourced from the original manufacturer or authorized distributors?
All IRFR9020TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9020TR meets industry standards.
7.What is the process for return or replacement of IRFR9020TR?
All IRFR9020TR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9020TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9020TR part is unused and in its original packaging.
Return procedure for IRFR9020TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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