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Vishay Siliconix IRFR9020TRLPBF

Part No.:
IRFR9020TRLPBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR9020TRLPBF.pdf
Description:
MOSFET P-CH 50V 9.9A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,960

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Product details

Overview

IRFR9020TRLPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -50 V drain-source voltage, 0.28 Ω RDS(on) at VGS = -10 V, and -9.9 A continuous drain current at TC = 25 °C. It delivers robust avalanche capability (EAS = 250 mJ), fast switching (tr = 57–66 ns), and low gate charge (Qg = 9.4–14 nC), making it suitable for DC/DC converter high-side switches and synchronous rectification in telecom power supplies.

For engineers reviewing the IRFR9020TRLPBF datasheet, IRFR9020TRLPBF pinout, IRFR9020TRLPBF application, or IRFR9020TRLPBF equivalent, key selection considerations include its -50 V VDS, 0.28 Ω on-resistance, TO-252 thermal performance (RthJC = 3.0 °C/W), repetitive avalanche rating (-9.9 A IAR), and compatibility with standard PCB layout practices for DPAK packages.

Technical Context

This P-channel MOSFET employs planar silicon technology optimized for low RDS(on) and high transconductance (gfs = 2.3–3.5 S), enabling efficient operation in high-frequency switching topologies. Its body diode exhibits trr = 56–280 ns and Qrr = 0.17–0.85 nC, supporting moderate-speed synchronous rectification without external snubbing.

The device features dynamic dV/dt immunity (5.8 V/ns), gate threshold voltage of -2.0 to -4.0 V, and operates across -55 to +150 °C junction temperature range. Its DPAK package provides low-inductance source/drain paths (LS = 7.5 nH, LD = 4.5 nH), critical for minimizing switching losses and voltage overshoot in hard-switched converters.

Key Specifications

Parameter Value and Actual Design Meaning
VDS-50 V - Maximum blocking voltage for high-side switch configurations in ≤48 V systems
RDS(on)0.28 Ω max at VGS = -10 V - Enables <1.5 W conduction loss at 9.9 A, reducing heatsink requirements
ID (continuous)-9.9 A at TC = 25 °C - Supports high-current load switching in compact surface-mount designs
Qg14 nC max - Low gate drive energy enables use with standard logic-level gate drivers
EAS250 mJ single-pulse - Withstands unclamped inductive turn-off events in relay or motor drive circuits
RthJC3.0 °C/W max - Allows direct thermal coupling to PCB copper pour or heatsink for >30 W power dissipation
tr/tf57–66 ns / 25–38 ns - Fast edge rates support >500 kHz switching frequencies with minimal dead-time penalty

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. Dimensions per JEDEC outline: 6.09 mm × 6.54 mm × 2.285 mm (L × W × H), with 2.29 mm lead pitch (e) and 4.32 mm E1 width.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Source)Source terminal (S)Low-impedance return path; connected to ground or low-side reference in high-side switch applications
Pin 2 (Gate)Control input (G)High-impedance voltage-controlled terminal requiring ≤500 nA leakage current at ±20 V
Pin 3 (Drain)Power output (D)Exposed metal pad on bottom surface; primary heat transfer path and high-current output node

Key Features

Feature Design Value
Surface-mountable DPAK packageReduces PCB parasitic inductance vs. through-hole alternatives, improving EMI and switching stability
Repetitive avalanche ratingSupports reliable operation under transient overvoltage conditions without derating in industrial power supplies
Dynamic dV/dt immunity5.8 V/ns rating prevents false turn-on during fast voltage transients in noisy environments
Low gate charge (Qg)Enables efficient drive from microcontroller GPIO or low-power gate drivers, reducing driver cost and board space
Enhanced body diode recoveryQrr = 0.17–0.85 nC minimizes reverse recovery losses in synchronous buck converters

Applications

Telecom DC/DC Converters Industrial Motor Drives

Use Scenario: High-efficiency 48 V input to 12 V output isolated DC/DC converter in base station power modules.

IC Role / Device Role / Timing Role: High-side P-channel switch in active clamp forward or synchronous flyback topology.

Use Value: 0.28 Ω RDS(on) reduces conduction loss by >35% vs. comparable -60 V MOSFETs, improving full-load efficiency to >92%.

Use Scenario: Bidirectional current control in brushed DC motor H-bridge for factory automation actuators.

IC Role / Device Role / Timing Role: Upper-leg switch enabling regenerative braking via controlled body diode conduction.

Use Value: 250 mJ single-pulse avalanche energy absorbs inductive kickback during rapid direction reversal without external clamping.

Computer Peripheral Power Consumer Audio Amplifiers

Use Scenario: Load switch for USB-C PD power path management in docking stations.

IC Role / Device Role / Timing Role: Hot-swap enable switch controlling 20 V/3 A power delivery to downstream ports.

Use Value: -2.0 to -4.0 V VGS(th) ensures clean turn-on with standard 3.3 V logic control, eliminating need for level shifters.

Use Scenario: Output stage protection switch in Class-D audio amplifier power supply rails.

IC Role / Device Role / Timing Role: Inrush current limiter and fault isolation switch for ±25 V rail sequencing.

Use Value: 5.8 V/ns dV/dt immunity prevents spurious turn-on during high-slew-rate audio signal transients, ensuring rail stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRFR9024TRLPBF-60 V VDS, 0.44 Ω RDS(on) at -10 V, same DPAK packageHigher voltage rating but higher on-resistance; suited for 60 V bus systems with lower current demandsSelect when system requires ≥60 V blocking but can tolerate ~57% higher conduction loss at 5 A
SiHFR9020-GE3Identical electrical specs and DPAK package; halogen-free, RoHS-compliant variant with GE3 suffixNo functional difference; used where lead-free/halogen-free compliance is mandatory per IPC/JEDEC standardsChoose for new designs requiring full environmental compliance without circuit or layout changes

Compared with IRFR9020TRLPBF, IRFR9024TRLPBF trades higher voltage headroom for increased conduction loss, while SiHFR9020-GE3 offers identical performance with enhanced material compliance-making the latter ideal for production programs requiring strict regulatory adherence without redesign.

Availability

IRFR9020TRLPBF is available at Aetrix Electronics and suitable for telecom DC/DC converters, industrial motor drives, and computer peripheral power management requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFR9020TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFR9020TRLPBF belongs to Vishay's high-voltage P-channel power MOSFET product line, engineered for high-efficiency, high-density power conversion in surface-mount applications where thermal performance and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for IRFR9020TRLPBF at 100 °C case temperature?

The IRFR9020TRLPBF supports -6.3 A continuous drain current at TC = 100 °C, derived from its linear derating factor of 0.33 W/°C and 42 W maximum power dissipation at 25 °C. This rating reflects real-world thermal limits when mounted on a 1" square FR-4 PCB with adequate copper area, ensuring safe operation in enclosed industrial enclosures without forced airflow.

Does IRFR9020TRLPBF have a specified peak diode recovery dV/dt rating?

Yes, the IRFR9020TRLPBF has a specified peak diode recovery dV/dt rating of 5.8 V/ns under test conditions of ISD ≤ -9.9 A, dI/dt ≤ -120 A/μs, VDD ≤ 40 V, and TJ ≤ 150 °C. This parameter quantifies the device's immunity to false turn-on during body diode commutation, critical for reliable operation in synchronous rectifier and H-bridge configurations.

What is the gate-source threshold voltage range for IRFR9020TRLPBF?

The gate-source threshold voltage (VGS(th)) for IRFR9020TRLPBF is specified from -2.0 V to -4.0 V at VDS = VGS and ID = -50 μA. This range ensures consistent turn-on behavior across process variation and temperature, allowing reliable operation with 3.3 V or 5 V logic-level gate drivers without requiring negative bias generation.

Can IRFR9020TRLPBF be used in avalanche mode repeatedly?

Yes, the IRFR9020TRLPBF is rated for repetitive avalanche operation with IAR = -9.9 A and EAR = 4.2 mJ per pulse, provided pulse width is limited by maximum junction temperature (see Figure 16 in datasheet). This capability enables robust design in inductive load switching applications such as solenoid drivers and relay controls without external snubber networks.

What is the thermal resistance from junction to case (RthJC) for IRFR9020TRLPBF?

The maximum junction-to-case (drain) thermal resistance RthJC for IRFR9020TRLPBF is 3.0 °C/W. This value is measured from the silicon die to the exposed drain pad, enabling accurate thermal modeling when the device is soldered directly to a PCB copper pour or attached to an external heatsink-critical for predicting junction temperature rise in high-power density layouts.

IRFR9020TRLPBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
50 V
Current - Continuous Drain (Id) @ 25°C:
9.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
280mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
490 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
42W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

IRFR9020TRLPBF FAQ

1.How can I place an order for IRFR9020TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9020TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9020TRLPBF reliable?

The price and inventory of IRFR9020TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9020TRLPBF is usually 5 days.

3.What payment methods are accepted for IRFR9020TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9020TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9020TRLPBF?

IRFR9020TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9020TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9020TRLPBF?

For technical support, including IRFR9020TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9020TRLPBF requirements.

6.How does Aetrix verify that IRFR9020TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFR9020TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9020TRLPBF meets industry standards.

7.What is the process for return or replacement of IRFR9020TRLPBF?

All IRFR9020TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9020TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9020TRLPBF part is unused and in its original packaging.

Return procedure for IRFR9020TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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