Vishay Siliconix IRFR9024

Overview

IRFR9024 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -60 V drain-source voltage, 0.28 Ω R_DS(on) at V_GS = -10 V, and -8.8 A continuous drain current at T_C = 25 °C. It delivers fast switching with 19 nC total gate charge and supports unclamped inductive switching up to 300 mJ single-pulse avalanche energy - used in DC-DC synchronous buck converters and high-side load switches.

For engineers reviewing the IRFR9024 datasheet, IRFR9024 pinout, IRFR9024 application, or IRFR9024 equivalent, this page provides verified technical context, validated pin configuration, real-world thermal and switching performance data, and two confirmed alternative parts for design flexibility in industrial power management and motor control circuits.

Technical Context

The IRFR9024 employs a third-generation trench-gate silicon process optimized for low R_DS(on) and rugged avalanche capability. Its P-channel architecture enables high-side switching without level-shifting circuitry, and its dynamic dV/dt rating of -4.5 V/ns ensures reliable operation under fast transient conditions.

Thermal performance is defined by R_thJC = 3.0 °C/W (junction-to-case) and R_thJA = 50 °C/W (PCB mount), supporting up to 2.5 W dissipation on a 1" FR-4 board. The integrated body diode exhibits t_rr = 100–200 ns and Q_rr = 0.32–0.64 μC, enabling efficient reverse recovery in synchronous rectification topologies.

Key Specifications

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction and mechanical stability. Standard footprint per Vishay Application Note 826: 6.18 mm × 10.67 mm pad layout with 2.29 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with IRFR9024, IRFR9024TRPbF offers identical performance in tape-and-reel format for pick-and-place lines, while SiHFR9024-GE3 provides equivalent electrical behavior with halogen-free construction - both eliminate redesign effort but address distinct supply chain and compliance requirements.

Availability

IRFR9024 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter design, and automotive body electronics requiring stable component supply across multi-year production cycles.

Supply support for IRFR9024 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The IRFR9024 belongs to Vishay's third-generation power MOSFET family engineered for optimal balance of low on-resistance, fast switching, and rugged avalanche performance in surface-mount industrial power systems.

FAQ

What is the maximum continuous drain current rating for IRFR9024 at 100 °C case temperature?

The IRFR9024 supports -5.6 A continuous drain current at T_C = 100 °C, derived from its linear derating factor of 0.33 W/°C and 42 W maximum power dissipation at 25 °C. This value reflects thermal limitation under heatsink-mounted conditions and must be validated against actual PCB layout and ambient airflow.

Does IRFR9024 require a gate driver IC, or can it be driven directly from a microcontroller?

The IRFR9024 can be driven directly from a 3.3 V or 5 V microcontroller GPIO if the application operates at low frequency (<10 kHz) and tolerates higher R_DS(on); however, its V_GS(th) range of -2.0 V to -4.0 V means full enhancement requires ≥-10 V. For reliable fast switching, a dedicated gate driver delivering ±12 V is recommended to achieve specified 19 nC Q_g performance.

What is the body diode forward voltage of IRFR9024, and how does it affect synchronous rectification?

The IRFR9024 body diode exhibits V_SD = -6.3 V at I_S = -8.8 A and T_J = 25 °C. While higher than Schottky diodes, its controlled reverse recovery (t_rr = 100–200 ns, Q_rr = 0.32–0.64 μC) allows predictable freewheeling in synchronous buck converters - but efficiency gains require precise dead-time control to avoid shoot-through.

Is IRFR9024 suitable for avalanche energy handling in inductive load switching?

Yes - the IRFR9024 is explicitly repetitive avalanche rated with I_AR = -8.8 A and E_AR = 5.0 mJ, and single-pulse rated for E_AS = 300 mJ. These values are measured under standardized conditions (V_DD = -25 V, L = 4.5 mH, R_g = 25 Ω) and confirm suitability for relay coil driving, solenoid control, and other unclamped inductive switching applications.

What PCB layout considerations are critical for thermal performance of IRFR9024 in DPAK package?

For optimal thermal performance, the IRFR9024's exposed drain pad must connect to ≥250 mm² of 2-oz copper on inner or outer layers, per Vishay Application Note 826. Minimum recommended pad dimensions are 6.18 mm × 10.67 mm. Avoid thermal reliefs on the drain pad; use multiple vias (≥6×0.3 mm) to internal ground planes to achieve R_thJA ≤ 50 °C/W on FR-4.