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Vishay Siliconix IRFR9024TRPBF-BE3
- Part No.:
- IRFR9024TRPBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9024TRPBF-BE3.pdf
- Description:
- MOSFET P-CH 60V 8.8A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,468
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Product details
Overview
IRFR9024TRPBF-BE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -60 V drain-source voltage, 0.28 Ω RDS(on) at VGS = -10 V, and -8.8 A continuous drain current at TC = 25 °C. It supports fast switching, repetitive avalanche operation, and is optimized for DC-DC converters, load switches, and high-side power control in industrial power supplies.
For engineers reviewing the IRFR9024TRPBF-BE3 datasheet, IRFR9024TRPBF-BE3 pinout, IRFR9024TRPBF-BE3 application, or IRFR9024TRPBF-BE3 equivalent, key selection criteria include its -60 V VDS, low gate charge (19 nC), ruggedized avalanche rating (300 mJ single-pulse), thermal resistance (RthJC = 3.0 °C/W), and compatibility with standard DPAK PCB footprints and reflow profiles.
Technical Context
This device employs third-generation TrenchFET® technology to achieve low on-resistance while maintaining robust dynamic performance. Its gate threshold voltage range (-2.0 V to -4.0 V) ensures reliable turn-on with standard -10 V gate drive, and its body diode exhibits 100–200 ns reverse recovery time with 0.32–0.64 μC Qrr.
The IRFR9024TRPBF-BE3 features dynamic dV/dt immunity up to -4.5 V/ns and is characterized for linear derating (0.33 W/°C) above 25 °C case temperature. Its internal source and drain inductances (LS = 7.5 nH, LD = 4.5 nH) are specified to support accurate switching waveform modeling in high-frequency power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - Maximum blocking voltage for high-side switch or reverse polarity protection circuits |
| RDS(on) | 0.28 Ω @ VGS = -10 V - Enables <1.5 W conduction loss at -5.3 A, suitable for compact thermal design |
| Qg | 19 nC - Determines gate driver power requirement and switching speed in hard-switched topologies |
| ID (cont.) | -8.8 A @ TC = 25 °C - Supports medium-power loads without forced cooling in DPAK mounting |
| EAS | 300 mJ - Allows safe unclamped inductive switching in motor drives or solenoid controls |
| RthJC | 3.0 °C/W - Enables direct heatsink attachment for >30 W power dissipation in high-reliability designs |
| Body diode VSD | -6.3 V @ IS = -8.8 A - Defines forward conduction loss during synchronous rectification or freewheeling |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; standardized 3-pin layout compatible with IPC-7351B footprint (recommended pad: 6.18 mm × 4.57 mm thermal pad, 0.224″ × 0.180″ leads).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal of P-channel MOSFET | Reference node for gate drive; connects to system ground or low-side return path |
| Pin 2 (Gate) | Control electrode | Receives negative gate voltage relative to source to turn on; requires ≤±20 V rating |
| Pin 3 (Drain) | Main current-carrying terminal | Connected to high-voltage rail; electrically and thermally tied to exposed backside metal pad |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables reliable operation under inductive switching stress without external snubbers |
| Dynamic dV/dt immunity | -4.5 V/ns rating prevents false turn-on in noisy high-dv/dt environments (e.g., motor phase legs) |
| Low RDS(on) × Qg figure-of-merit | 5.32 Ω·nC - Balances conduction and switching losses for 100–500 kHz SMPS designs |
| Pb-free and halogen-free | Complies with RoHS 2011/65/EU and JEDEC JS709E material definitions |
| Surface-mount (DPAK) | Supports automated assembly and vapor-phase reflow; thermal pad enables 42 W TC = 25 °C dissipation |
Applications
| DC-DC Converter High-Side Switch | Reverse Polarity Protection |
|---|---|
Use Scenario: Used as high-side switch in non-synchronous buck or buck-boost converters delivering 5–24 V output at up to 5 A. IC Role / Device Role / Timing Role: Power switching element controlling energy transfer from input to inductor; operates in hard-switched mode at 100–300 kHz. Use Value: Low RDS(on) minimizes conduction loss; avalanche rating absorbs leakage inductance spikes during turn-off. | Use Scenario: Placed in series with VIN to block reverse voltage in battery-powered equipment or automotive accessories. IC Role / Device Role / Timing Role: Unidirectional current valve activated only when polarity is correct; remains off during reverse connection. Use Value: -60 V VDS withstands load dump transients; low gate threshold allows direct microcontroller control without level shifters. |
| Motor Driver High-Side Load Switch | Industrial PLC Output Stage |
Use Scenario: Controls power to brushed DC motors or solenoids in factory automation systems with 12–48 V supply rails. IC Role / Device Role / Timing Role: High-side power switch enabling bidirectional current flow via complementary low-side control; handles inductive kickback. Use Value: 300 mJ EAS safely clamps inductive energy; fast switching (td(on)/td(off) < 30 ns) supports PWM duty cycle resolution down to 1%. | Use Scenario: Drives 24 V DC outputs in programmable logic controllers for sensors, valves, or indicator lamps. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays; provides overcurrent and thermal fault tolerance. Use Value: Repetitive avalanche capability eliminates need for external flyback diodes; RthJC = 3.0 °C/W enables direct heatsink mounting for sustained 4 A loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR9024PbF-BE3 | Same die and specs; differs only in tape-and-reel packaging (no TR suffix) and alternate manufacturing location code | No functional difference; suitable for manual prototyping or small-batch assembly where reel feed not required | Select IRFR9024TRPBF-BE3 for automated SMT line compatibility; IRFR9024PbF-BE3 for hand-soldered evaluation |
| SiHFR9024-GE3 | Identical RDS(on), Qg, and VDS; uses Vishay's "-GE3" halogen-free marking instead of "-BE3"; same DPAK package | Same thermal and electrical behavior; preferred where full Vishay Green compliance documentation is mandated | Choose SiHFR9024-GE3 for strict environmental compliance programs; IRFR9024TRPBF-BE3 for legacy BOM continuity |
Compared with IRFR9024PbF-BE3, the IRFR9024TRPBF-BE3 offers tape-and-reel delivery for pick-and-place integration, while SiHFR9024-GE3 provides identical performance with enhanced material traceability-both preserve the -60 V, 0.28 Ω, 19 nC core specification set critical for high-reliability power switching.
Availability
IRFR9024TRPBF-BE3 is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and automotive body electronics requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for IRFR9024TRPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and ruggedness.
The IRFR9024TRPBF-BE3 belongs to Vishay's third-generation TrenchFET® P-channel power MOSFET family, engineered for high-efficiency DC-DC conversion, load switching, and protection circuits in space-constrained industrial and automotive applications.
FAQ
What is the maximum continuous drain current rating for IRFR9024TRPBF-BE3 at 100 °C case temperature?
The IRFR9024TRPBF-BE3 has a maximum continuous drain current of -5.6 A at TC = 100 °C, derived from linear derating (0.33 W/°C) starting from 42 W at 25 °C. This value reflects thermal limits under PCB-mounted conditions and must be validated against actual board layout and heatsinking in the target application. The IRFR9024TRPBF-BE3 datasheet specifies this rating in the Absolute Maximum Ratings table.
Does IRFR9024TRPBF-BE3 support logic-level gate drive?
No, the IRFR9024TRPBF-BE3 is not a logic-level MOSFET. Its gate threshold voltage ranges from -2.0 V to -4.0 V, and it is characterized for RDS(on) at VGS = -10 V. For reliable enhancement-mode operation, a gate drive voltage of at least -8 V is recommended. The IRFR9024TRPBF-BE3 requires a dedicated negative gate driver or level-shifting circuit when interfaced with 3.3 V or 5 V microcontrollers.
What is the thermal resistance from junction to ambient for IRFR9024TRPBF-BE3 in a standard PCB mount?
When mounted on a 1" square FR-4 PCB, the IRFR9024TRPBF-BE3 has a maximum junction-to-ambient thermal resistance (RthJA) of 50 °C/W. This value assumes no external heatsink and defines the worst-case temperature rise under 2.5 W power dissipation. The IRFR9024TRPBF-BE3 achieves significantly lower thermal resistance (3.0 °C/W) when the drain pad is soldered to a large copper area or heatsink.
Can IRFR9024TRPBF-BE3 be used in avalanche mode repeatedly?
Yes, the IRFR9024TRPBF-BE3 is explicitly rated for repetitive avalanche operation with IAR = -8.8 A and EAR = 5.0 mJ per pulse. This capability is validated per test condition b (VDD = -25 V, L = 4.5 mH, Rg = 25 Ω) and is limited by junction temperature. The IRFR9024TRPBF-BE3 datasheet confirms this in the Absolute Maximum Ratings table and Figure 12.
What is the gate-to-source leakage current specification for IRFR9024TRPBF-BE3?
The gate-to-source leakage current (IGSS) for IRFR9024TRPBF-BE3 is ±100 nA maximum at VGS = ±20 V and TJ = 25 °C, as specified in the Static Characteristics section of the datasheet. This low leakage ensures minimal gate drive current requirements and stable biasing in high-impedance gate networks. The IRFR9024TRPBF-BE3 maintains this specification across its full operating temperature range.
IRFR9024TRPBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 280mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 570 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
IRFR9024TRPBF-BE3 FAQ
1.How can I place an order for IRFR9024TRPBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9024TRPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9024TRPBF-BE3 reliable?
The price and inventory of IRFR9024TRPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9024TRPBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFR9024TRPBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9024TRPBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9024TRPBF-BE3?
IRFR9024TRPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9024TRPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9024TRPBF-BE3?
For technical support, including IRFR9024TRPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9024TRPBF-BE3 requirements.
6.How does Aetrix verify that IRFR9024TRPBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFR9024TRPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9024TRPBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFR9024TRPBF-BE3?
All IRFR9024TRPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9024TRPBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9024TRPBF-BE3 part is unused and in its original packaging.
Return procedure for IRFR9024TRPBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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