Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix IRFR9024TRR

Part No.:
IRFR9024TRR
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR9024TRR.pdf
Description:
MOSFET P-CH 60V 8.8A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,519

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFR9024 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -60 V drain-source voltage, 0.28 Ω RDS(on) at VGS = -10 V, and -8.8 A continuous drain current at TC = 25 °C. It delivers fast switching with 19 nC total gate charge and supports rugged operation via repetitive avalanche rating (EAS = 300 mJ) in DC-DC converters and load-switching circuits.

For engineers reviewing the IRFR9024 datasheet, IRFR9024 pinout, IRFR9024 application, or IRFR9024 equivalent, key selection criteria include its -60 V VDS, low RDS(on) for high-efficiency P-channel high-side switching, thermal performance on PCB mount (RthJA = 50 °C/W), and compatibility with standard DPAK footprint layouts.

Technical Context

This device uses third-generation trench-gate silicon technology to achieve optimized trade-offs between conduction loss (0.28 Ω), switching speed (tr = 68 ns, tf = 29 ns), and ruggedness. Its internal body diode exhibits trr = 100–200 ns and Qrr = 0.32–0.64 μC, supporting synchronous rectification and inductive load handling.

The IRFR9024 operates with gate threshold voltage VGS(th) = -2.0 to -4.0 V and supports ±20 V gate drive. Its dynamic parameters-including Ciss = 570 pF, Coss = 360 pF, and Crss = 65 pF-are specified at VDS = -25 V, enabling predictable gate driver sizing and EMI control in high-frequency SMPS designs.

Key Specifications

Parameter Value and Actual Design Meaning
VDS-60 V - Maximum blocking voltage for high-side P-channel switch in 48 V systems
RDS(on) @ VGS = -10 V0.28 Ω - Low conduction loss enabling <1.5 W dissipation in typical SMT applications
ID (continuous) @ TC = 25 °C-8.8 A - Supports medium-power load switching without heatsink under case-cooled conditions
Qg19 nC - Determines gate driver current requirement (~1.9 mA avg. for 100 kHz fsw)
EAS300 mJ - Enables unclamped inductive energy absorption in motor drive or solenoid control
RthJA (PCB mount)50 °C/W - Thermal resistance when mounted on 1" square FR-4 PCB, defining safe operating area
VSD @ IS = -8.8 A-6.3 V - Forward voltage of integral body diode, critical for freewheeling path losses

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction and mechanical stability. Standard JEDEC outline with 3-pin configuration: Gate (G), Drain (D), Source (S).

Pin/Terminal Circuit Role Design Meaning
GGateControls channel conduction; requires -10 V for full enhancement; ±20 V absolute max rating
DDrainMain high-side power terminal; electrically connected to exposed thermal pad; carries load current into device
SSourceReference node for gate drive and current return path; tied to system ground or positive rail in high-side config

Key Features

Feature Design Value
Repetitive avalanche ratedSupports reliable operation under transient overloads (IAR = -8.8 A, EAR = 5.0 mJ) without derating
Dynamic dV/dt rating-4.5 V/ns immunity prevents false turn-on during high-speed voltage transients in noisy environments
Fast switching13 ns turn-on delay + 68 ns rise time enables >500 kHz operation in synchronous buck or OR-ing circuits
Surface-mount (DPAK)Compatible with vapor-phase and infrared reflow; thermal pad improves heat transfer to PCB copper pour
P-channel topologyEnables high-side switching without level-shifting gate drivers in 12–48 V industrial power rails

Applications

Industrial Power Supplies Automotive Body Control Modules

Use Scenario: High-side switch for 24 V auxiliary rail in programmable logic controller (PLC) power distribution.

IC Role / Device Role / Timing Role: P-channel MOSFET controlling power delivery to field I/O modules with reverse-polarity protection.

Use Value: 0.28 Ω RDS(on) limits resistive loss to <0.6 W at 1.5 A load; avalanche rating handles inductive kickback from relay coils.

Use Scenario: Load switch for interior lighting and window lift motor control in 12 V vehicle architecture.

IC Role / Device Role / Timing Role: High-side power switch driven directly by microcontroller GPIO with integrated pull-up.

Use Value: -2.0 to -4.0 V VGS(th) ensures clean turn-on with 3.3 V logic; dV/dt immunity prevents spurious activation during alternator load dump.

DC-DC Converter Synchronous Rectifier Hot-Swap OR-ing Circuit

Use Scenario: Secondary-side synchronous rectifier in isolated flyback converter for telecom power brick.

IC Role / Device Role / Timing Role: P-channel MOSFET replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: Body diode trr = 100–200 ns and Qrr = 0.32–0.64 μC minimize switching loss during dead-time transitions.

Use Scenario: OR-ing diode replacement in redundant 48 V backplane power system with hot-plug capability.

IC Role / Device Role / Timing Role: High-side ideal diode controller interface using IRFR9024 as pass element.

Use Value: Low RDS(on) reduces forward voltage drop to ~240 mV at 0.85 A, cutting power loss by >70% vs. discrete diode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRFR9020PbFVDS = -50 V, RDS(on) = 0.33 Ω @ -10 V, lower voltage rating and higher on-resistanceNot suitable for 48 V bus applications; limited to ≤40 V systemsSelect only if design operates below 45 V and prioritizes cost over conduction loss
SiHFR9024-GE3Same electrical specs and DPAK package; Pb-free/halogen-free construction per RoHS 2011/65/EUNo functional difference; identical thermal and switching behaviorPreferred for new designs requiring lead-free compliance and extended lifecycle availability

Compared with IRFR9024, IRFR9020PbF offers reduced voltage margin and higher conduction loss, while SiHFR9024-GE3 provides identical performance with environmental compliance-making it a drop-in replacement for RoHS-aligned production.

Availability

IRFR9024 is available at Aetrix Electronics and suitable for industrial power supplies, automotive body electronics, and DC-DC converter designs requiring stable component supply across multi-year production cycles.

Supply support for IRFR9024 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and automotive applications.

The IRFR9024 belongs to Vishay's third-generation power MOSFET family, engineered for optimal balance of low RDS(on), fast switching, and rugged avalanche performance in surface-mount power management circuits.

FAQ

What is the maximum junction temperature for IRFR9024?

The IRFR9024 has an operating junction and storage temperature range of -55 °C to +150 °C. Its absolute maximum junction temperature is +150 °C, beyond which safe operation is not guaranteed. Derating curves in Figure 9 show that continuous drain current drops to -5.6 A at TC = 100 °C, reflecting thermal limits under real-world PCB mounting conditions.

Does IRFR9024 require a gate driver IC?

The IRFR9024 can be driven directly by 3.3 V or 5 V logic in many applications due to its VGS(th) range of -2.0 V to -4.0 V, but full enhancement (RDS(on) = 0.28 Ω) requires VGS = -10 V. For robust switching above 100 kHz or high-current loads, a dedicated gate driver delivering ±10 V with ≥1 A peak current is recommended to manage 19 nC Qg efficiently.

Is IRFR9024 suitable for linear mode operation?

The IRFR9024 is not characterized or rated for sustained linear (ohmic) operation. Its Safe Operating Area (SOA) curve in Figure 8 shows pulsed limits only, and continuous linear use risks thermal runaway due to negative temperature coefficient of RDS(on). It is designed for switching applications-not analog pass elements or electronic fuses.

What is the thermal resistance from junction to ambient for IRFR9024 on a PCB?

When mounted on a 1" square FR-4 PCB, the IRFR9024 has RthJA = 50 °C/W. This value assumes standard layout per Application Note 826 (10.668 mm × 5.690 mm copper pad). Without added copper area or airflow, junction temperature rise will be 50 °C per watt of power dissipated-critical for calculating thermal margin in sealed enclosures.

How does the body diode performance of IRFR9024 compare to external Schottky diodes?

The IRFR9024's integrated body diode has VSD = -6.3 V at -8.8 A and trr = 100–200 ns, making it slower and higher-drop than most Schottky diodes. However, its Qrr = 0.32–0.64 μC is well-defined and repeatable, enabling predictable snubber design in freewheeling paths where discrete diodes introduce variability in layout parasitics.

IRFR9024TRR Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
280mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
570 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 42W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

IRFR9024TRR FAQ

1.How can I place an order for IRFR9024TRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9024TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9024TRR reliable?

The price and inventory of IRFR9024TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9024TRR is usually 5 days.

3.What payment methods are accepted for IRFR9024TRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9024TRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9024TRR?

IRFR9024TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9024TRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9024TRR?

For technical support, including IRFR9024TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9024TRR requirements.

6.How does Aetrix verify that IRFR9024TRR is sourced from the original manufacturer or authorized distributors?

All IRFR9024TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9024TRR meets industry standards.

7.What is the process for return or replacement of IRFR9024TRR?

All IRFR9024TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9024TRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9024TRR part is unused and in its original packaging.

Return procedure for IRFR9024TRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFR9024TRR Tags

  • IRFR9024TRR
  • IRFR9024TRR PDF
  • IRFR9024TRR Datasheet
  • IRFR9024TRR Specifications
  • IRFR9024TRR Images
  • Vishay Siliconix
  • Vishay Siliconix IRFR9024TRR
  • Buy IRFR9024TRR
  • IRFR9024TRR Price
  • IRFR9024TRR Distributor
  • IRFR9024TRR Supplier
  • IRFR9024TRR Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER