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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR9110

Name: IRFR9110
Brand: Vishay Siliconix
SKU: IRFR9110
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR9110

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9110.pdf

Description:: MOSFET P-CH 100V 3.1A DPAK

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Product details

Overview

IRFR9110 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -100 V drain-source voltage, 1.2 Ω R_DS(on) at V_GS = -10 V, and -3.1 A continuous drain current at T_C = 25 °C. It supports fast switching, repetitive avalanche operation, and is optimized for DC-DC converters, load switching, and high-side power control in industrial and automotive subsystems.

For engineers reviewing the IRFR9110 datasheet, IRFR9110 pinout, IRFR9110 application, or IRFR9110 equivalent, key selection criteria include its -100 V blocking capability, low gate charge (8.7 nC), ruggedized avalanche rating (140 mJ single-pulse), thermal resistance (R_thJC = 5.0 °C/W), and compatibility with standard PCB-mount thermal management per FR-4 layout guidelines.

Technical Context

This device uses third-generation trench-gate silicon technology to achieve low on-resistance while maintaining robust dynamic dV/dt immunity (-5.5 V/ns) and controlled body diode recovery (t_rr = 80–160 ns). Its gate threshold voltage range of -2.0 V to -4.0 V ensures reliable turn-on with standard logic-level drive circuits.

The IRFR9110 integrates a monolithic body diode with V_SD = -5.5 V at -3.1 A and Q_rr = 0.17–0.30 μC, enabling efficient synchronous rectification and flyback energy handling in unclamped inductive switching applications up to 12 A pulsed drain current.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Maximum reverse-blocking voltage before breakdown; defines high-side switch capability in 48 V and 60 V systems.
R_DS(on)	1.2 Ω @ V_GS = -10 V - Determines conduction loss at nominal load; enables <1.2 W I²R loss at -3.1 A.
Q_g	8.7 nC - Total gate charge required for full turn-on; sets minimum driver current and switching speed limit.
E_AS	140 mJ - Single-pulse avalanche energy rating; allows safe operation during inductive load transients without external snubbers.
R_thJC	5.0 °C/W - Junction-to-case thermal resistance; confirms direct heatsink mounting feasibility for >20 W dissipation.
t_r/t_f	27 ns / 17 ns - Rise/fall times under defined test conditions; supports >1 MHz switching in hard-switched topologies.
I_D (T_C = 100 °C)	-2.0 A - Derated continuous current at elevated case temperature; informs thermal design margin in enclosed environments.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction and mechanical anchoring. Standard footprint per Vishay Application Note 826: 6.18 mm × 10.67 mm pad layout with 2.29 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
Tab / Drain (D)	Main power output terminal and thermal path	Exposed copper pad electrically connected to drain; must be soldered to large copper area for thermal and electrical performance.
Lead 1 / Gate (G)	Control input	Low-capacitance node requiring <8.7 nC charge; sensitive to noise-requires short, low-inductance trace routing.
Lead 2 / Source (S)	Power return reference	Common source node for load connection; forms body diode anode; influences gate drive loop inverting configuration.

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports ≥3.1 A repetitive inductive switching without derating-enables robust motor drive and solenoid control.
Dynamic dV/dt immunity	-5.5 V/ns rating prevents false turn-on during high-slew-rate transients in noisy industrial environments.
Fast switching with low Q_gd	4.1 nC gate-drain charge minimizes Miller plateau duration, reducing switching losses in high-frequency SMPS.
P-channel topology	Enables high-side switching without bootstrap circuitry-simplifies gate drive in battery-powered and isolated systems.
Surface-mount DPAK	Compatible with vapor-phase and infrared reflow; achieves 25 W power dissipation with heatsink, or 2.5 W on 1" FR-4 PCB.

Applications

Industrial Motor Control	Automotive Body Electronics
Use Scenario: High-side switching of 24 V DC brushed motors in HVAC actuators and seat positioners. IC Role / Device Role / Timing Role: P-channel MOSFET providing load disconnect and direction control via PWM-driven source-follower configuration. Use Value: -100 V rating accommodates load-dump transients; -3.1 A continuous current handles peak stall currents; avalanche rating eliminates need for external clamping diodes.	Use Scenario: Power distribution to lighting modules, door locks, and mirror controls in 12 V vehicle architectures. IC Role / Device Role / Timing Role: Load switch managing inrush current and fault isolation with integrated body diode for reverse-battery protection. Use Value: V_SD = -5.5 V ensures low forward drop during reverse-conduction events; Q_rr = 0.17–0.30 μC limits diode recovery losses during rapid polarity reversal.
Telecom DC-DC Converters	Industrial PLC I/O Modules
Use Scenario: Synchronous rectification in isolated 48 V input, 5/12 V output flyback converters for base station power supplies. IC Role / Device Role / Timing Role: Secondary-side P-channel switch replacing Schottky diode to reduce conduction loss and improve efficiency above 200 kHz. Use Value: R_DS(on) = 1.2 Ω cuts rectifier loss by >40% vs. 40 V Schottky; t_rr = 80–160 ns avoids shoot-through during dead-time transitions.	Use Scenario: Field-side power switching for 24 V digital outputs driving solenoids, relays, and indicator LEDs. IC Role / Device Role / Timing Role: High-side driver with built-in overtemperature and avalanche protection for programmable logic controller output stages. Use Value: E_AS = 140 mJ withstands inductive kickback from 1 H coils; R_thJC = 5.0 °C/W enables direct heatsink mounting for sustained 2 A loads.

Industrial Motor Control

Automotive Body Electronics

Use Scenario: High-side switching of 24 V DC brushed motors in HVAC actuators and seat positioners.

IC Role / Device Role / Timing Role: P-channel MOSFET providing load disconnect and direction control via PWM-driven source-follower configuration.

Use Value: -100 V rating accommodates load-dump transients; -3.1 A continuous current handles peak stall currents; avalanche rating eliminates need for external clamping diodes.

Use Scenario: Power distribution to lighting modules, door locks, and mirror controls in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: Load switch managing inrush current and fault isolation with integrated body diode for reverse-battery protection.

Use Value: V_SD = -5.5 V ensures low forward drop during reverse-conduction events; Q_rr = 0.17–0.30 μC limits diode recovery losses during rapid polarity reversal.

Telecom DC-DC Converters

Industrial PLC I/O Modules

Use Scenario: Synchronous rectification in isolated 48 V input, 5/12 V output flyback converters for base station power supplies.

IC Role / Device Role / Timing Role: Secondary-side P-channel switch replacing Schottky diode to reduce conduction loss and improve efficiency above 200 kHz.

Use Value: R_DS(on) = 1.2 Ω cuts rectifier loss by >40% vs. 40 V Schottky; t_rr = 80–160 ns avoids shoot-through during dead-time transitions.

Use Scenario: Field-side power switching for 24 V digital outputs driving solenoids, relays, and indicator LEDs.

IC Role / Device Role / Timing Role: High-side driver with built-in overtemperature and avalanche protection for programmable logic controller output stages.

Use Value: E_AS = 140 mJ withstands inductive kickback from 1 H coils; R_thJC = 5.0 °C/W enables direct heatsink mounting for sustained 2 A loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR9010	-100 V V_DS, but higher R_DS(on) = 1.8 Ω and lower I_D = -2.5 A; same DPAK package and pinout.	Lower current capability reduces usable power range; suitable only where thermal margin permits higher conduction loss.	Select IRFR9010 only when cost sensitivity outweighs efficiency and current requirements.
SiHFR9110	Identical electrical specs and DPAK package; Pb-free/halogen-free construction per JEDEC Level 2a moisture sensitivity.	No functional difference; fully interchangeable in all designs meeting RoHS/REACH compliance mandates.	Prefer SiHFR9110 for new designs requiring green manufacturing standards without performance trade-off.

Compared with IRFR9110, IRFR9010 offers reduced current handling and higher on-resistance-making it less suitable for thermally constrained or high-efficiency applications-while SiHFR9110 delivers identical performance with enhanced environmental compliance, requiring no layout or thermal redesign.

Availability

IRFR9110 is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, and telecom DC-DC converter designs requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IRFR9110 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRFR9110 belongs to Vishay's third-generation high-voltage P-channel power MOSFET family, engineered for demanding high-side switching, load management, and unclamped inductive load control in harsh industrial and automotive environments.

FAQ

What is the maximum continuous drain current for IRFR9110 at 100 °C case temperature?

The IRFR9110 supports -2.0 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the DPAK package without heatsinking and must be used for thermal design validation in enclosed or high-ambient environments. The IRFR9110 datasheet confirms this rating applies under steady-state conduction with proper PCB copper area.

Does IRFR9110 require a gate driver IC for typical 24 V industrial applications?

The IRFR9110 can be driven directly by microcontroller GPIOs or logic buffers when V_GS ≤ -10 V is available, due to its -2.0 V to -4.0 V gate threshold. However, for reliable fast switching (>100 kHz) or high-current loads, a dedicated gate driver is recommended to deliver the full 8.7 nC gate charge within nanoseconds and suppress ringing. The IRFR9110's low Q_g makes it compatible with low-power drivers like TC4420 or MIC4422.

Can IRFR9110 replace N-channel MOSFETs in high-side configurations without additional circuitry?

Yes-the IRFR9110 is a P-channel MOSFET specifically designed for high-side switching, eliminating the need for bootstrap capacitors or level-shifters required by N-channel devices. Its -100 V V_DS and -3.1 A I_D enable direct replacement in 24 V and 48 V systems where the source connects to the positive rail and the load ties to ground. The IRFR9110's gate drive simplicity improves system reliability and reduces bill-of-materials count.

What is the avalanche energy rating of IRFR9110 and how is it validated?

The IRFR9110 is rated for 140 mJ single-pulse avalanche energy (E_AS) under test conditions of V_DD = -25 V, L = 21 mH, R_g = 25 Ω, and I_AS = -3.1 A, per Figure 12 in the official Vishay datasheet (S26-0614-Rev. F). This rating is measured using unclamped inductive switching and confirms the device's ability to absorb transient energy without failure-critical for solenoid, relay, and motor drive applications.

Is IRFR9110 compatible with lead-free reflow soldering processes?

Yes-the IRFR9110 is qualified for lead-free reflow soldering with a peak temperature of 260 °C for 10 seconds, as stated in the Absolute Maximum Ratings table. Its DPAK (TO-252) package meets JEDEC J-STD-020 moisture sensitivity level 2a, and Vishay recommends standard vapor-phase or infrared profiles. The IRFR9110's thermal design supports reliable attachment to FR-4 PCBs with appropriate pad geometry per Application Note 826.

IRFR9110 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR9110 FAQ

1.How can I place an order for IRFR9110 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9110 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9110 reliable?

The price and inventory of IRFR9110 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9110 is usually 5 days.

3.What payment methods are accepted for IRFR9110?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9110 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9110?

IRFR9110 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9110 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9110?

For technical support, including IRFR9110 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9110 requirements.

6.How does Aetrix verify that IRFR9110 is sourced from the original manufacturer or authorized distributors?

All IRFR9110 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9110 meets industry standards.

7.What is the process for return or replacement of IRFR9110?

All IRFR9110 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9110, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9110 part is unused and in its original packaging.

Return procedure for IRFR9110:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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