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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR9110TR

Name: IRFR9110TR
Brand: Vishay Siliconix
SKU: IRFR9110TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR9110TR

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9110TR.pdf

Description:: MOSFET P-CH 100V 3.1A DPAK

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Product details

Overview

IRFR9110TR from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -100 V drain-source voltage, 1.2 Ω R_DS(on) at V_GS = -10 V, and -3.1 A continuous drain current at T_C = 25 °C. It supports fast switching, repetitive avalanche operation, and is optimized for DC-DC converters, load switches, and high-side power control in industrial and automotive subsystems.

For engineers reviewing the IRFR9110TR datasheet, IRFR9110TR pinout, IRFR9110TR application, or IRFR9110TR equivalent, key selection criteria include its -100 V blocking capability, low gate charge (8.7 nC), ruggedized avalanche rating (140 mJ single-pulse), thermal resistance (R_thJC = 5.0 °C/W), and compatibility with standard PCB-mount soldering processes.

Technical Context

This device implements a third-generation trench-gate vertical DMOS structure optimized for low R_DS(on) and fast switching while maintaining robust avalanche energy handling (E_AS = 140 mJ). Its gate threshold voltage range (-2.0 to -4.0 V) ensures reliable turn-on with standard -10 V gate drive and partial logic-level compatibility down to -5 V.

The integrated body diode exhibits t_rr = 80–160 ns and Q_rr = 0.17–0.30 μC under specified conditions, supporting moderate-frequency synchronous rectification and flyback recovery. Thermal design is enabled by direct case-to-heatsink conduction via the exposed drain pad, with R_thJC = 5.0 °C/W and R_thJA = 50 °C/W on 1" FR-4 PCB.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Supports high-side switching in 48 V and 60 V industrial bus systems without derating
R_DS(on) @ V_GS = -10 V	1.2 Ω - Enables <1.2 W conduction loss at -3.1 A, suitable for compact thermal designs
Q_g	8.7 nC - Low gate drive power requirement; compatible with standard gate drivers (e.g., TC442x)
I_D (continuous, T_C = 25 °C)	-3.1 A - Sustains full-rated current with minimal heatsinking in DPAK footprint
E_AS	140 mJ - Withstands unclamped inductive switching events in motor gate drives and solenoid controls
R_thJC	5.0 °C/W - Enables efficient heat transfer to external copper pour or heatsink via drain tab
t_r/t_f	27 ns / 17 ns - Supports >500 kHz PWM operation with controlled EMI in SMPS designs

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad on underside for thermal and electrical connection. Standard 3-pin configuration: Gate (G), Drain (D), Source (S), with Drain tab electrically and thermally connected to pin 2 (Drain) and case.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate control input	Receives negative voltage relative to source to turn on; requires ≤ ±20 V absolute rating; low C_iss (200 pF) eases driver sizing
D (Pin 2 + Tab)	High-side power output / heat path	Electrically tied to exposed copper drain pad; primary thermal conduction path to PCB copper or heatsink; handles full load current
S (Pin 3)	Source reference / return path	Connected to system ground or floating rail; defines V_GS reference; carries full load current and body diode reverse recovery current

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables reliable operation under transient overloads (I_AR = -3.1 A, E_AR = 2.5 mJ) without external snubbers in relay/motor drive circuits
Dynamic dV/dt rating	Withstands -5.5 V/ns peak di/dt-induced voltage transients, reducing false triggering in noisy industrial environments
Surface-mount (DPAK)	Compatible with automated reflow (vapor phase, infrared, wave); enables high-density PCB layouts with minimal assembly cost
Low Q_gd/Q_g ratio	Q_gd = 4.1 nC of total 8.7 nC gate charge - improves Miller immunity and hard-switching robustness in half-bridge topologies
Fast body diode recovery	t_rr = 80–160 ns and Q_rr = 0.17–0.30 μC - minimizes switching losses and voltage overshoot during freewheeling in buck and flyback converters

Applications

DC-DC Converter High-Side Switch	Industrial Load Switch
Use Scenario: Step-down converter in programmable logic controller (PLC) power supply, operating from 48 V input to 12 V/3 A output. IC Role / Device Role / Timing Role: High-side P-channel switch controlling main power path; operates in hard-switched mode at 300 kHz. Use Value: Low R_DS(on) (1.2 Ω) limits conduction loss to <1.1 W; avalanche rating absorbs inductor flyback energy during fault conditions.	Use Scenario: Remote-controlled 24 V load enable/disable for HVAC actuator module with surge-prone wiring. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relay; driven by microcontroller GPIO with level-shifting. Use Value: -100 V rating tolerates load dump transients up to ISO 7637-2 Pulse 5a; fast turn-off (t_f = 17 ns) prevents arcing during hot-plug disconnection.
Automotive Body Control Module	Overvoltage Protection Circuit
Use Scenario: Power distribution to interior lighting and window lift motors in 12 V vehicle architecture. IC Role / Device Role / Timing Role: High-side switch with integrated diagnostics; monitors V_DS for open-load and short-circuit detection. Use Value: Repetitive avalanche capability (E_AR = 2.5 mJ) sustains repeated inductive kickback from brushed DC motors without degradation.	Use Scenario: Reverse-polarity and overvoltage protection for USB-C PD accessory port powered from 20 V adapter. IC Role / Device Role / Timing Role: P-channel MOSFET used in ideal diode configuration with external comparator and reference. Use Value: Fast body diode (t_rr = 80 ns) enables low-loss reverse-current blocking; -100 V V_DS headroom accommodates 20 V input plus 40 V transients per IEC 61000-4-5.

DC-DC Converter High-Side Switch

Industrial Load Switch

Use Scenario: Step-down converter in programmable logic controller (PLC) power supply, operating from 48 V input to 12 V/3 A output.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling main power path; operates in hard-switched mode at 300 kHz.

Use Value: Low R_DS(on) (1.2 Ω) limits conduction loss to <1.1 W; avalanche rating absorbs inductor flyback energy during fault conditions.

Use Scenario: Remote-controlled 24 V load enable/disable for HVAC actuator module with surge-prone wiring.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relay; driven by microcontroller GPIO with level-shifting.

Use Value: -100 V rating tolerates load dump transients up to ISO 7637-2 Pulse 5a; fast turn-off (t_f = 17 ns) prevents arcing during hot-plug disconnection.

Automotive Body Control Module

Overvoltage Protection Circuit

Use Scenario: Power distribution to interior lighting and window lift motors in 12 V vehicle architecture.

IC Role / Device Role / Timing Role: High-side switch with integrated diagnostics; monitors V_DS for open-load and short-circuit detection.

Use Value: Repetitive avalanche capability (E_AR = 2.5 mJ) sustains repeated inductive kickback from brushed DC motors without degradation.

Use Scenario: Reverse-polarity and overvoltage protection for USB-C PD accessory port powered from 20 V adapter.

IC Role / Device Role / Timing Role: P-channel MOSFET used in ideal diode configuration with external comparator and reference.

Use Value: Fast body diode (t_rr = 80 ns) enables low-loss reverse-current blocking; -100 V V_DS headroom accommodates 20 V input plus 40 V transients per IEC 61000-4-5.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHFR9110-GE3	Same die, identical R_DS(on), Q_g, and avalanche specs; RoHS-compliant with halogen-free packaging	No functional difference; preferred for new designs requiring halogen-free compliance	Select SiHFR9110-GE3 when halogen-free material declaration is required per IPC-1752A.
IRFU9110PbF	Same silicon but IPAK (TO-251) through-hole package; identical electrical specs except R_thJA = 110 °C/W (vs. 50 °C/W for DPAK)	Suitable only where through-hole mounting and higher board-level thermal isolation are acceptable	Choose IRFU9110PbF only if legacy through-hole assembly is mandated and thermal budget allows 2.5× higher junction-to-ambient resistance.

Compared with IRFR9110TR, SiHFR9110-GE3 offers identical performance with enhanced environmental compliance, while IRFU9110PbF trades surface-mount efficiency for through-hole mechanical robustness-neither is pin-compatible due to differing package footprints and terminal geometries.

Availability

IRFR9110TR is available at Aetrix Electronics and suitable for industrial motor drives, automotive body electronics, and high-reliability DC-DC converters requiring stable component supply across extended product lifecycles.

Supply support for IRFR9110TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRFR9110TR belongs to Vishay's third-generation high-voltage P-channel MOSFET family, engineered for demanding industrial and automotive power switching where avalanche robustness, low R_DS(on), and surface-mount manufacturability are critical.

FAQ

What is the maximum continuous drain current for IRFR9110TR at 100 °C case temperature?

The IRFR9110TR supports -2.0 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package; designers must ensure adequate PCB copper area or heatsinking to maintain case temperature within this limit during sustained operation.

Does IRFR9110TR have a specified gate charge profile, and how does it impact driver selection?

Yes, IRFR9110TR has a total gate charge (Q_g) of 8.7 nC max at V_GS = -10 V, with Q_gs = 2.2 nC and Q_gd = 4.1 nC. This low-to-moderate gate charge enables use with standard low-power gate drivers (e.g., MIC4423) delivering ≥2 A peak current, minimizing driver losses and simplifying layout in space-constrained applications.

Can IRFR9110TR be used in linear (analog) regulation mode, and what limits its safe operating area?

The IRFR9110TR is not optimized for linear-mode operation. Its Safe Operating Area (SOA) curve (Fig. 7) shows limited DC capability: at V_DS = -50 V, maximum continuous current drops to ~0.5 A. Linear use requires strict thermal management and current limiting; for analog regulation, dedicated lateral or DMOS linear FETs with wider SOA are recommended instead of IRFR9110TR.

What is the body diode forward voltage of IRFR9110TR, and how does it affect efficiency in synchronous rectifier applications?

The IRFR9110TR body diode exhibits V_SD = -5.5 V typical at I_S = -3.1 A and T_J = 25 °C. This relatively high forward drop makes it unsuitable for high-efficiency synchronous rectification; it is intended for infrequent freewheeling or clamping. For synchronous designs, external Schottky or MOSFET-based active rectifiers should replace reliance on the IRFR9110TR body diode.

Is IRFR9110TR compliant with lead-free and RoHS requirements?

Yes, IRFR9110TR is marked "PbF" (lead-free) and complies with RoHS Directive 2011/65/EU. The "TRRPbF" suffix confirms lead-free termination and halogen-free molding compound per Vishay specification S26-0614-Rev. F. Full compliance documentation, including material declarations, is available via Vishay's website using document number 91279.

IRFR9110TR Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR9110TR FAQ

1.How can I place an order for IRFR9110TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9110TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9110TR reliable?

The price and inventory of IRFR9110TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9110TR is usually 5 days.

3.What payment methods are accepted for IRFR9110TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9110TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9110TR?

IRFR9110TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9110TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9110TR?

For technical support, including IRFR9110TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9110TR requirements.

6.How does Aetrix verify that IRFR9110TR is sourced from the original manufacturer or authorized distributors?

All IRFR9110TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9110TR meets industry standards.

7.What is the process for return or replacement of IRFR9110TR?

All IRFR9110TR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9110TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9110TR part is unused and in its original packaging.

Return procedure for IRFR9110TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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