Vishay Siliconix IRFR9110TRL
- Part No.:
- IRFR9110TRL
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9110TRL.pdf
- Description:
- MOSFET P-CH 100V 3.1A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:2,898
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Product details
Overview
IRFR9110TRL from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -100 V drain-source voltage, 1.2 Ω RDS(on) at VGS = -10 V, and -3.1 A continuous drain current at TC = 25 °C. It delivers fast switching with 8.7 nC total gate charge and supports repetitive avalanche operation up to 2.5 mJ, making it suitable for DC-DC converter high-side switches and motor control H-bridge circuits.
For engineers reviewing the IRFR9110TRL datasheet, IRFR9110TRL pinout, IRFR9110TRL application, or IRFR9110TRL equivalent, key selection considerations include its -100 V blocking capability, thermal performance on PCB mount (RthJA = 50 °C/W), body diode recovery time (80–160 ns), and compatibility with standard DPAK footprint layouts per Vishay's recommended pad dimensions.
Technical Context
This device employs third-generation trench-gate silicon technology optimized for ruggedness and low conduction loss. Its dynamic dV/dt rating (-5.5 V/ns) and repetitive avalanche capability enable reliable operation in inductive switching environments without external snubbers.
The IRFR9110TRL integrates a monolithic body diode with VSD = -5.5 V at IS = -3.1 A and Qrr = 0.17–0.30 μC, supporting synchronous rectification and freewheeling functions in buck and half-bridge topologies where controlled reverse recovery is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -100 V - Supports high-voltage DC bus isolation in industrial power supplies and automotive battery management systems. |
| RDS(on) | 1.2 Ω @ VGS = -10 V - Enables <1.2 W conduction loss at -3.1 A, suitable for thermally constrained PCB-mounted designs. |
| Qg | 8.7 nC - Low gate charge reduces driver power requirement and enables efficient 100–500 kHz switching in SMPS. |
| ID (cont.) | -3.1 A @ TC = 25 °C - Specifies maximum steady-state current under heatsink-cooled conditions. |
| EAS | 140 mJ - Single-pulse avalanche energy rating allows safe unclamped inductive turn-off in motor drive fault conditions. |
| RthJA (PCB) | 50 °C/W - Thermal resistance when mounted on 1" FR-4 PCB defines junction temperature rise under 2.5 W dissipation. |
| trr | 80–160 ns - Body diode reverse recovery time impacts EMI and efficiency in hard-switched converters. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction; standardized 3-pin layout compatible with IPC-7351B footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal of P-channel MOSFET | Reference node for gate drive; connects to load return or ground in high-side switch configuration. |
| Pin 2 (Gate) | Control electrode | Accepts negative gate voltage relative to source to turn on; requires -10 V for full RDS(on) specification. |
| Pin 3 (Drain) | Power output terminal | Exposed metal pad on underside - must be soldered to large copper pour for thermal management and current path. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables robust operation during transient overloads without derating or external protection in motor control and UPS applications. |
| Dynamic dV/dt rating | -5.5 V/ns immunity prevents spurious turn-on due to high-speed voltage transients in noisy industrial environments. |
| Fast switching with low Qg | 8.7 nC total gate charge supports efficient high-frequency operation while minimizing driver losses. |
| Surface-mount DPAK package | TO-252 outline enables automated assembly and provides superior thermal performance vs. through-hole alternatives like IRFU9110. |
| Low RDS(on) at -10 V | 1.2 Ω ensures minimal conduction loss in 12–48 V systems, reducing heat sink requirements in space-constrained designs. |
Applications
| DC-DC Converter High-Side Switch | Motor Control H-Bridge |
|---|---|
Use Scenario: Used as upper switch in non-synchronous buck converter supplying 5–24 V loads from 36–72 V input. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch; driven by gate driver referenced to input rail. Use Value: -100 V rating accommodates input surge; 1.2 Ω RDS(on) limits conduction loss to <1.2 W at 3.1 A, enabling compact PCB layout without forced air cooling. | Use Scenario: Integrated into half-bridge leg of brushed DC motor controller operating from 24 V battery. IC Role / Device Role / Timing Role: High-side switch in complementary pair; body diode handles freewheeling current during PWM off-time. Use Value: 80–160 ns trr and 0.17–0.30 μC Qrr reduce switching losses and EMI compared to standard rectifiers, improving efficiency at 20 kHz PWM. |
| Industrial Power Supply OR-ing | LED Driver Current Sink |
Use Scenario: Parallel redundant 48 V power inputs with automatic failover using back-to-back P-MOSFETs. IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch; operates in linear region during transition. Use Value: Repetitive avalanche rating (2.5 mJ) absorbs energy during hot-swap events; -100 V VDS headroom prevents breakdown during input transients. | Use Scenario: Constant-current sink for high-brightness LED strings in architectural lighting fixtures. IC Role / Device Role / Timing Role: Linear-regulated current path controlled by analog feedback loop; dissipates up to 2.5 W. Use Value: RthJA = 50 °C/W on PCB mount allows stable 2.5 W operation without heatsink; -4.0 V VGS(th) enables precise analog control down to low currents. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR9053TRLPbF | -60 V VDS, 0.22 Ω RDS(on), 7.2 nC Qg - lower voltage, lower RDS(on), faster switching | Not suitable for >60 V bus applications; better for 12–24 V systems requiring higher current density | Select when system voltage ≤60 V and lower conduction loss is prioritized over voltage margin. |
| SiHFR9110-GE3 | Identical VDS, RDS(on), Qg, and package; Vishay's halogen-free variant with same electrical specs | No functional difference; meets RoHS/REACH requirements without design change | Drop-in replacement for lead-free/halogen-free compliance; identical thermal and switching behavior. |
Compared with IRFR9110TRL, IRFR9053TRLPbF offers lower on-resistance and gate charge but sacrifices 40 V of blocking capability, limiting use to sub-60 V systems; SiHFR9110-GE3 matches all electrical and thermal parameters exactly while satisfying stricter environmental mandates.
Availability
IRFR9110TRL is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and LED driver designs requiring stable component supply across extended production cycles.
Supply support for IRFR9110TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFR9110TRL belongs to Vishay's third-generation power MOSFET family engineered for rugged switching in high-voltage, medium-current applications where avalanche tolerance and thermal stability are critical.
FAQ
What is the maximum continuous drain current for IRFR9110TRL at 100 °C case temperature?
The IRFR9110TRL supports -2.0 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package under sustained power dissipation; designers must verify junction temperature using RthJC = 5.0 °C/W and actual power loss to ensure TJ remains ≤150 °C.
Does IRFR9110TRL have a specified body diode reverse recovery time?
Yes, the IRFR9110TRL specifies body diode reverse recovery time (trr) as 80–160 ns at TJ = 25 °C, IF = -4.0 A, and dI/dt = 100 A/μs. This parameter is critical for estimating switching losses and EMI in freewheeling applications; actual values vary with temperature and current slew rate.
Can IRFR9110TRL be used in linear mode for constant-current regulation?
Yes, the IRFR9110TRL is rated for linear operation with maximum power dissipation of 2.5 W on PCB mount (TA = 25 °C) and RthJA = 50 °C/W. When used as a current sink, ensure gate drive maintains VGS within ±20 V and monitor TJ to avoid exceeding 150 °C, especially under high VDS × ID conditions.
What is the gate threshold voltage range for IRFR9110TRL?
The IRFR9110TRL has a gate-source threshold voltage (VGS(th)) range of -2.0 V to -4.0 V at VDS = VGS and ID = 250 μA. This negative threshold confirms its P-channel enhancement-mode behavior; logic-level drive requires gate voltage ≤ -2.0 V relative to source to initiate conduction.
Is IRFR9110TRL pin-compatible with IRFU9110?
No, IRFR9110TRL uses the DPAK (TO-252) surface-mount package with three leads in straight-line configuration, while IRFU9110 uses the IPAK (TO-251) through-hole package with bent leads. Although both share identical die characteristics, their mechanical footprints and mounting methods differ - PCB layout and assembly processes are not interchangeable.
IRFR9110TRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.2Ohm @ 1.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR9110TRL FAQ
1.How can I place an order for IRFR9110TRL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9110TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9110TRL reliable?
The price and inventory of IRFR9110TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9110TRL is usually 5 days.
3.What payment methods are accepted for IRFR9110TRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9110TRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9110TRL?
IRFR9110TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9110TRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9110TRL?
For technical support, including IRFR9110TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9110TRL requirements.
6.How does Aetrix verify that IRFR9110TRL is sourced from the original manufacturer or authorized distributors?
All IRFR9110TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9110TRL meets industry standards.
7.What is the process for return or replacement of IRFR9110TRL?
All IRFR9110TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9110TRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9110TRL part is unused and in its original packaging.
Return procedure for IRFR9110TRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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