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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR9110TRLPBF

Name: IRFR9110TRLPBF
Brand: Vishay Siliconix
SKU: IRFR9110TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR9110TRLPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9110TRLPBF.pdf

Description:: MOSFET P-CH 100V 3.1A DPAK

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Product details

Overview

IRFR9110TRLPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -100 V drain-source voltage, 1.2 Ω R_DS(on) at V_GS = -10 V, and -3.1 A continuous drain current at T_C = 25 °C. It supports fast switching with 8.7 nC total gate charge and is designed for high-reliability DC-DC conversion, load switching, and reverse polarity protection in industrial power supplies.

For engineers reviewing the IRFR9110TRLPBF datasheet, IRFR9110TRLPBF pinout, IRFR9110TRLPBF application, or IRFR9110TRLPBF equivalent, this page delivers verified electrical specs, thermal derating data, avalanche energy rating (140 mJ single-pulse), body diode recovery characteristics (t_rr = 80–160 ns), and direct package footprint guidance for DPAK PCB layout.

Technical Context

This device belongs to Vishay's third-generation high-voltage P-channel MOSFET family, featuring ruggedized construction with repetitive avalanche capability (I_AR = -3.1 A, E_AR = 2.5 mJ) and dynamic dV/dt rating (-5.5 V/ns). Its gate threshold voltage range of -2.0 V to -4.0 V ensures stable turn-on under standard -10 V gate drive while maintaining noise immunity.

The IRFR9110TRLPBF integrates a low-leakage body diode (I_S = -3.1 A continuous, V_SD = -5.5 V at I_S = -3.1 A) and exhibits controlled internal inductance (L_D = 4.5 nH, L_S = 7.5 nH), enabling predictable switching behavior in hard-switched topologies without external snubbing in many cases.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Maximum blocking voltage for high-side switch or reverse polarity protection in 48 V systems
R_DS(on)	1.2 Ω @ V_GS = -10 V - Enables <1.2 W conduction loss at -3.1 A, suitable for thermally constrained SMT designs
Q_g	8.7 nC - Low gate charge supports efficient 100–500 kHz switching with moderate gate driver strength
I_D (cont.)	-3.1 A @ T_C = 25 °C - Continuous current rating achievable with minimal heatsinking on 1" FR-4 PCB
E_AS	140 mJ - Single-pulse avalanche energy allows safe operation during inductive load turn-off transients
t_rr	80–160 ns - Body diode recovery time enables use in synchronous rectification or freewheeling paths up to ~200 kHz
R_thJC	5.0 °C/W - Junction-to-case thermal resistance confirms effective heat transfer to PCB copper pour or heatsink

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. Standard lead pitch of 2.29 mm (0.090"), overall outline 6.22 × 6.73 × 2.39 mm (L × W × H), compliant with JEDEC MO-236.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Reference node for gate drive; connects to system ground or low-side return path
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate requiring ≤ ±100 nA leakage drive; negative voltage turns device ON
Pin 3 (Drain)	Power output (D)	Exposed metal tab - electrically and thermally connected to drain; must be soldered to large copper area

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports repeated inductive switching events up to I_AR = -3.1 A without degradation, eliminating need for external clamping in many DC-DC stages
Dynamic dV/dt rated	Withstands -5.5 V/ns transient voltage slew rates, reducing risk of false turn-on in noisy high-dV/dt environments
Surface-mount (DPAK)	Enables automated assembly and high-power density layouts; thermal pad improves PCB heat spreading vs. through-hole alternatives
P-channel logic-compatible	V_GS(th) range (-2.0 to -4.0 V) ensures reliable turn-on with standard -5 V or -10 V gate drivers, avoiding level-shifting complexity
Low Q_gd/Q_g ratio	Q_gd = 4.1 nC / Q_g = 8.7 nC ≈ 47% - Improves Miller immunity and reduces switching instability in high-side configurations

Applications

Reverse Polarity Protection	DC-DC Converter High-Side Switch
Use Scenario: Input protection circuit for 24–48 V industrial equipment against accidental battery reversal. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement, placed between input connector and main power rail. Use Value: Eliminates 0.5–1.0 V forward drop of Schottky diodes, reducing power loss by >70% and thermal stress at full load.	Use Scenario: High-side switch in non-synchronous buck converter or offline flyback auxiliary supply. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input to inductor; operates at fixed frequency with PWM gate control. Use Value: 1.2 Ω R_DS(on) limits conduction loss to <12 mW at 100 mA bias, supporting compact design without active cooling.
Load Switch for Industrial I/O	Motor Brake / Freewheeling Diode Replacement
Use Scenario: Controlled power enable for PLC digital output modules driving solenoids or relays. IC Role / Device Role / Timing Role: Load switch isolating downstream circuitry; driven by microcontroller GPIO with open-drain or level-shifted output. Use Value: Fast turn-on delay (10 ns) and rise time (27 ns) support precise timing-critical enable/disable sequencing in real-time control loops.	Use Scenario: Active freewheeling path in brushed DC motor H-bridge during PWM off-time. IC Role / Device Role / Timing Role: Body diode and channel used for low-loss current recirculation; synchronized with complementary N-channel switches. Use Value: 80–160 ns t_rr and low V_SD (-5.5 V) reduce switching losses and EMI vs. discrete Schottky solutions in 20–100 kHz motor drives.

Reverse Polarity Protection

DC-DC Converter High-Side Switch

Use Scenario: Input protection circuit for 24–48 V industrial equipment against accidental battery reversal.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement, placed between input connector and main power rail.

Use Value: Eliminates 0.5–1.0 V forward drop of Schottky diodes, reducing power loss by >70% and thermal stress at full load.

Use Scenario: High-side switch in non-synchronous buck converter or offline flyback auxiliary supply.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input to inductor; operates at fixed frequency with PWM gate control.

Use Value: 1.2 Ω R_DS(on) limits conduction loss to <12 mW at 100 mA bias, supporting compact design without active cooling.

Load Switch for Industrial I/O

Motor Brake / Freewheeling Diode Replacement

Use Scenario: Controlled power enable for PLC digital output modules driving solenoids or relays.

IC Role / Device Role / Timing Role: Load switch isolating downstream circuitry; driven by microcontroller GPIO with open-drain or level-shifted output.

Use Value: Fast turn-on delay (10 ns) and rise time (27 ns) support precise timing-critical enable/disable sequencing in real-time control loops.

Use Scenario: Active freewheeling path in brushed DC motor H-bridge during PWM off-time.

IC Role / Device Role / Timing Role: Body diode and channel used for low-loss current recirculation; synchronized with complementary N-channel switches.

Use Value: 80–160 ns t_rr and low V_SD (-5.5 V) reduce switching losses and EMI vs. discrete Schottky solutions in 20–100 kHz motor drives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR9010TRLPBF	V_DS = -100 V, R_DS(on) = 1.7 Ω @ -10 V, Q_g = 6.7 nC - higher on-resistance but lower gate charge	Lower conduction loss not required; prioritizes faster switching over thermal margin	Select when gate drive strength is limited and peak efficiency at light loads is critical
SiHFR9110-GE3	Same V_DS, R_DS(on), Q_g, and package; halogen-free, RoHS-compliant variant with identical electrical specs	No functional difference; required for strict environmental compliance programs (e.g., automotive Tier 1)	Choose for new designs targeting IPC-1752A reporting or EU REACH/ELV compliance

Compared with IRFR9110TRLPBF, IRFR9010TRLPBF trades higher conduction loss for reduced gate drive demand, while SiHFR9110-GE3 offers identical performance with enhanced material compliance-neither is pin-compatible without verifying board-level solder mask and thermal pad layout alignment.

Availability

IRFR9110TRLPBF is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and embedded system protection circuits requiring stable component supply across multi-year production cycles.

Supply support for IRFR9110TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on reliability and power efficiency.

The IRFR9110TRLPBF belongs to Vishay's third-generation high-voltage P-channel power MOSFET product line, engineered for ruggedness in industrial and automotive power conversion where avalanche tolerance and thermal stability are critical.

FAQ

What is the maximum continuous drain current rating for IRFR9110TRLPBF at 100 °C case temperature?

The IRFR9110TRLPBF supports -2.0 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package mounted on standard PCB; actual usable current depends on copper area, airflow, and ambient conditions. The linear derating factor is 0.20 W/°C above 25 °C case temperature, meaning power dissipation drops from 25 W at 25 °C to 10 W at 100 °C.

Does IRFR9110TRLPBF have a specified body diode reverse recovery time (t_rr)?

Yes, the IRFR9110TRLPBF specifies t_rr = 80–160 ns under test conditions of T_J = 25 °C, I_F = -4.0 A, and dI/dt = 100 A/μs. This parameter is measured using the integral body diode and directly impacts switching loss and EMI in freewheeling or synchronous rectifier applications. The datasheet also provides Q_rr = 0.17–0.30 μC for design-level loss estimation.

Can IRFR9110TRLPBF be used in avalanche mode repeatedly?

Yes, the IRFR9110TRLPBF is explicitly rated for repetitive avalanche operation with I_AR = -3.1 A and E_AR = 2.5 mJ per pulse. This capability is validated per Figure 11 and 12 in the datasheet and allows safe operation during unclamped inductive switching events without external snubbers-provided pulse width and duty cycle remain within limits defined by junction temperature constraints.

What is the gate-source threshold voltage (V_GS(th)) range for IRFR9110TRLPBF?

The IRFR9110TRLPBF has a gate-source threshold voltage range of -2.0 V to -4.0 V at V_DS = V_GS and I_D = 250 μA. This ensures robust turn-on with standard -5 V or -10 V gate drivers while providing noise margin against spurious turn-on. The typical value is approximately -3.0 V, and the temperature coefficient is negative, meaning V_GS(th) decreases slightly as junction temperature rises.

Is IRFR9110TRLPBF compatible with lead-free reflow soldering processes?

Yes, IRFR9110TRLPBF is qualified for lead-free reflow soldering with a peak temperature of 260 °C for 10 seconds, per its Absolute Maximum Ratings table. The device uses Pb-free terminations and complies with JEDEC J-STD-020 moisture sensitivity level (MSL) requirements. Proper PCB pad design per Application Note 826 (recommended DPAK footprints) is essential to ensure void-free solder joints on the exposed drain pad.

IRFR9110TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR9110TRLPBF FAQ

1.How can I place an order for IRFR9110TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9110TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9110TRLPBF reliable?

The price and inventory of IRFR9110TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9110TRLPBF is usually 5 days.

3.What payment methods are accepted for IRFR9110TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9110TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9110TRLPBF?

IRFR9110TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9110TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9110TRLPBF?

For technical support, including IRFR9110TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9110TRLPBF requirements.

6.How does Aetrix verify that IRFR9110TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFR9110TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9110TRLPBF meets industry standards.

7.What is the process for return or replacement of IRFR9110TRLPBF?

All IRFR9110TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9110TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9110TRLPBF part is unused and in its original packaging.

Return procedure for IRFR9110TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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