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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR9110TRRPBF

Name: IRFR9110TRRPBF
Brand: Vishay Siliconix
SKU: IRFR9110TRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR9110TRRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9110TRRPBF.pdf

Description:: MOSFET P-CH 100V 3.1A DPAK

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Product details

Overview

IRFR9110TRRPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -100 V drain-source voltage, 1.2 Ω R_DS(on) at V_GS = -10 V, and -3.1 A continuous drain current at T_C = 25 °C. It supports fast switching, repetitive avalanche operation, and is optimized for high-efficiency DC-DC converters and load-switching applications.

For engineers reviewing the IRFR9110TRRPBF datasheet, IRFR9110TRRPBF pinout, IRFR9110TRRPBF application, or IRFR9110TRRPBF equivalent, key selection criteria include its -100 V blocking capability, low gate charge (8.7 nC), ruggedized avalanche rating (140 mJ single-pulse), thermal resistance (R_thJC = 5.0 °C/W), and compatibility with standard PCB-mount soldering processes.

Technical Context

This device employs third-generation trench-gate silicon technology to achieve low on-resistance while maintaining robust dynamic performance. Its gate threshold voltage range (-2.0 V to -4.0 V) ensures reliable turn-on with standard logic-level drive, and its body diode exhibits 80–160 ns reverse recovery time with 0.17–0.30 μC Q_rr, supporting synchronous rectification in buck topologies.

The IRFR9110TRRPBF features integrated avalanche energy handling (E_AS = 140 mJ) and dV/dt immunity (-5.5 V/ns), enabling operation in inductive switching environments without external snubbers. Its DPAK thermal pad design delivers 25 W maximum power dissipation at case temperature, with 50 °C/W junction-to-ambient resistance under PCB-mount conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Supports high-side switching in 48 V industrial bus and telecom power systems
R_DS(on) @ V_GS = -10 V	1.2 Ω - Enables <1.2 W conduction loss at -3.1 A, suitable for compact thermal designs
Q_g	8.7 nC - Low gate charge reduces driver power demand and enables >500 kHz switching
I_D (continuous)	-3.1 A @ T_C = 25 °C - Rated for sustained load switching in space-constrained PCB layouts
E_AS	140 mJ - Withstands unclamped inductive energy in motor control and solenoid drivers
R_thJC	5.0 °C/W - Enables direct heatsink attachment via exposed drain pad for thermal management
t_r/t_f	27 ns / 17 ns - Fast edge rates minimize switching losses in high-frequency SMPS

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction and mechanical anchoring. Standard lead finish is Pb-free and halogen-free per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of P-channel MOSFET	Common return path for load current; connects to system ground or low-side rail in high-side switch configurations
Pin 2 (Gate)	Control electrode	Receives negative gate drive relative to source to turn on; requires <±20 V absolute rating and ≤100 nA leakage
Pin 3 (Drain)	Power output terminal	Connected to exposed copper thermal pad; carries full load current and serves as primary heat transfer path to PCB

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports ≥3.1 A repetitive avalanche current (I_AR) without degradation-critical for overcurrent fault tolerance in motor drives
Dynamic dV/dt immunity	-5.5 V/ns rating prevents false turn-on during high-slew-rate transients in noisy industrial environments
Low Q_gd/Q_g ratio	4.1 nC / 8.7 nC = 0.47 - Reduces Miller effect, improves switching stability with moderate gate resistors
Body diode softness	trr = 80–160 ns with 0.17–0.30 μC Q_rr - Minimizes voltage overshoot and EMI in freewheeling paths
PCB-mount power rating	2.5 W at T_A = 25 °C - Validated for 1" square FR-4 board, enabling cost-effective thermal design without heatsinks

Applications

DC-DC Buck Converter	High-Side Load Switch
Use Scenario: Synchronous rectification in 12 V to 3.3 V/5 V point-of-load converters for FPGA and ASIC power rails. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 85 %. Use Value: 1.2 Ω R_DS(on) cuts rectifier loss by >60 % vs. 40 V Schottky, directly increasing light-load efficiency.	Use Scenario: Controlled power-up sequencing for microcontroller peripherals and sensors in automotive body electronics. IC Role / Device Role / Timing Role: High-side P-channel switch enabling true OFF-state isolation with no shoot-through risk. Use Value: -100 V rating provides margin against load-dump transients (ISO 7637-2 Pulse 5a), ensuring robust 12 V/24 V system operation.
Motor Driver Half-Bridge	Industrial LED Dimming
Use Scenario: Upper switch in brushed DC motor H-bridge for HVAC actuators and valve control. IC Role / Device Role / Timing Role: High-side switching element with integrated avalanche energy handling for inductive kickback suppression. Use Value: 140 mJ E_AS withstands worst-case inductive flyback without external clamping, reducing BOM count and layout area.	Use Scenario: Constant-current dimming stage for high-brightness LED strings in street lighting and signage. IC Role / Device Role / Timing Role: PWM-controlled current sink switch operating at 1–20 kHz with minimal thermal rise. Use Value: 25 W T_C-rated power dissipation allows direct PCB copper pour heatsinking, eliminating discrete heatsinks in IP67-rated enclosures.

DC-DC Buck Converter

High-Side Load Switch

Use Scenario: Synchronous rectification in 12 V to 3.3 V/5 V point-of-load converters for FPGA and ASIC power rails.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 85 %.

Use Value: 1.2 Ω R_DS(on) cuts rectifier loss by >60 % vs. 40 V Schottky, directly increasing light-load efficiency.

Use Scenario: Controlled power-up sequencing for microcontroller peripherals and sensors in automotive body electronics.

IC Role / Device Role / Timing Role: High-side P-channel switch enabling true OFF-state isolation with no shoot-through risk.

Use Value: -100 V rating provides margin against load-dump transients (ISO 7637-2 Pulse 5a), ensuring robust 12 V/24 V system operation.

Motor Driver Half-Bridge

Industrial LED Dimming

Use Scenario: Upper switch in brushed DC motor H-bridge for HVAC actuators and valve control.

IC Role / Device Role / Timing Role: High-side switching element with integrated avalanche energy handling for inductive kickback suppression.

Use Value: 140 mJ E_AS withstands worst-case inductive flyback without external clamping, reducing BOM count and layout area.

Use Scenario: Constant-current dimming stage for high-brightness LED strings in street lighting and signage.

IC Role / Device Role / Timing Role: PWM-controlled current sink switch operating at 1–20 kHz with minimal thermal rise.

Use Value: 25 W T_C-rated power dissipation allows direct PCB copper pour heatsinking, eliminating discrete heatsinks in IP67-rated enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR9010TRPBF	-100 V V_DS, 1.8 Ω R_DS(on) @ -10 V - higher on-resistance, lower Q_g (6.5 nC)	Lower conduction loss sensitivity but reduced switching speed; better for <300 kHz operation	Select when thermal budget permits higher R_DS(on) and gate drive strength is limited
SiHFR9110-GE3	Identical electrical specs and DPAK package; RoHS-compliant "GE3" suffix denotes alternate manufacturing location	No functional or layout difference; qualified for same automotive and industrial temperature ranges	Drop-in replacement with identical form, fit, and function-preferred for new designs requiring latest Vishay qualification

Compared with IRFR9110TRRPBF, IRFR9010TRPBF trades higher conduction loss for lower gate drive demand, while SiHFR9110-GE3 offers identical performance with updated material compliance and supply chain flexibility-making it the most direct alternative for continuity and sourcing resilience.

Availability

IRFR9110TRRPBF is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, DC-DC conversion, and LED lighting applications requiring stable component supply across multi-year production cycles.

Supply support for IRFR9110TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability power management solutions.

The IRFR9110TRRPBF belongs to Vishay's third-generation power MOSFET family, engineered for ruggedized switching in harsh environments where avalanche capability, dV/dt immunity, and surface-mount thermal performance are critical.

FAQ

What is the maximum continuous drain current for IRFR9110TRRPBF at 100 °C case temperature?

The IRFR9110TRRPBF supports -2.0 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package under sustained power dissipation; actual usable current depends on PCB copper area, ambient temperature, and airflow. The linear derating factor is 0.20 W/°C above 25 °C case temperature.

Does IRFR9110TRRPBF require a negative gate drive voltage to operate?

Yes, IRFR9110TRRPBF is a P-channel MOSFET and requires a gate voltage more negative than the source to turn on. A typical gate drive of -10 V relative to source fully enhances the channel, delivering the specified 1.2 Ω R_DS(on). Gate-source voltage must remain within ±20 V to avoid damage, and threshold voltage is specified between -2.0 V and -4.0 V.

Can IRFR9110TRRPBF be used in avalanche mode repeatedly?

Yes, IRFR9110TRRPBF is explicitly rated for repetitive avalanche operation, with I_AR = -3.1 A and E_AR = 2.5 mJ. This capability is validated under defined test conditions (V_DD = -25 V, L = 21 mH, R_g = 25 Ω) and is limited by junction temperature. Designers must ensure pulse width and duty cycle keep T_J ≤ 150 °C using thermal modeling.

What is the thermal resistance from junction to case (R_thJC) for IRFR9110TRRPBF?

The IRFR9110TRRPBF has a maximum junction-to-case (drain) thermal resistance of 5.0 °C/W, measured from die junction to the exposed drain pad. This value enables effective heat transfer to an external heatsink or large PCB copper pour. When mounted on a 1" square FR-4 board, junction-to-ambient resistance is 50 °C/W, supporting up to 2.5 W dissipation at 25 °C ambient.

Is IRFR9110TRRPBF compatible with lead-free reflow soldering processes?

Yes, IRFR9110TRRPBF is qualified for lead-free reflow soldering with a peak temperature of 260 °C for 10 seconds, per JEDEC J-STD-020. Its DPAK package uses matte tin plating and complies with RoHS Directive 2011/65/EU and halogen-free standards (per Vishay document 99912). No special prebake or moisture sensitivity handling is required.

IRFR9110TRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR9110TRRPBF FAQ

1.How can I place an order for IRFR9110TRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9110TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9110TRRPBF reliable?

The price and inventory of IRFR9110TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9110TRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR9110TRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9110TRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9110TRRPBF?

IRFR9110TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9110TRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9110TRRPBF?

For technical support, including IRFR9110TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9110TRRPBF requirements.

6.How does Aetrix verify that IRFR9110TRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR9110TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9110TRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR9110TRRPBF?

All IRFR9110TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9110TRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9110TRRPBF part is unused and in its original packaging.

Return procedure for IRFR9110TRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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