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Vishay Siliconix IRFR9120
- Part No.:
- IRFR9120
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9120.pdf
- Description:
- MOSFET P-CH 100V 5.6A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,519
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Product details
Overview
IRFR9120 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -100 V drain-source voltage, 0.60 Ω RDS(on) at VGS = -10 V, and -5.6 A continuous drain current at TC = 25 °C. It supports fast switching, repetitive avalanche operation, and is commonly used in DC-DC converters, load switches, and high-side power control circuits.
For engineers reviewing the IRFR9120 datasheet, IRFR9120 pinout, IRFR9120 application, or IRFR9120 equivalent, key selection criteria include its -100 V blocking capability, low gate charge (18 nC), ruggedized avalanche rating (210 mJ single-pulse), thermal resistance (RthJC = 3.0 °C/W), and compatibility with standard PCB-mount thermal management using FR-4 substrates.
Technical Context
This device belongs to Vishay's third-generation power MOSFET family optimized for high-voltage P-channel switching. Its design integrates dynamic dV/dt immunity (-5.5 V/ns), body diode recovery time (100–200 ns), and low reverse transfer capacitance (45 pF) to support stable operation in inductive switching environments.
The IRFR9120 uses planar vertical DMOS technology with a thermally efficient DPAK package enabling up to 42 W power dissipation at case temperature. Gate threshold voltage ranges from -2.0 V to -4.0 V, supporting both standard -10 V and logic-level gate drive configurations when paired with appropriate level-shifting circuitry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -100 V - Maximum blocking voltage for high-side switch or reverse polarity protection in 48 V systems |
| RDS(on) | 0.60 Ω @ VGS = -10 V - Enables <1.9 W conduction loss at -3.4 A, suitable for medium-power loads |
| Qg | 18 nC - Low total gate charge reduces driver power requirement and improves switching efficiency above 100 kHz |
| ID (cont.) | -5.6 A @ TC = 25 °C - Supports sustained load currents in compact heatsinked or PCB-copper thermal designs |
| EAS | 210 mJ - Single-pulse avalanche energy rating allows safe operation under unclamped inductive turn-off stress |
| RthJC | 3.0 °C/W - Enables direct thermal coupling to heatsinks or copper pour, critical for high-duty-cycle applications |
| VGS(th) | -2.0 to -4.0 V - Threshold range ensures reliable turn-on with standard gate drivers while avoiding spurious conduction |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad on underside for thermal conduction. Dimensions per JEDEC outline: 6.09 mm × 6.54 mm × 2.29 mm (L × W × H), lead pitch 2.29 mm, thermal pad area ~30 mm².
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab / Pin 2 (Drain) | Main power output terminal and thermal path | Exposed metal tab connects directly to internal drain structure; must be soldered to large copper pour or heatsink for thermal performance |
| Pin 1 (Gate) | Control input | High-impedance MOS gate requiring low-current drive; sensitive to ESD; layout must minimize trace inductance |
| Pin 3 (Source) | Reference node and current return path | Connected to system ground or floating rail; source inductance (7.5 nH) affects switching speed and ringing |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports repeated inductive turn-off events up to IAR = -5.6 A and EAR = 4.2 mJ without degradation |
| Dynamic dV/dt immunity | Rated -5.5 V/ns - prevents false turn-on during high-slew-rate transients in motor or relay drive circuits |
| Fast switching | Turn-on delay 9.6 ns, rise time 29 ns - enables >500 kHz PWM operation with minimal dead-time overhead |
| Low Qgd/Qg ratio | 9.0/18 nC = 0.5 - improves Miller immunity and reduces risk of shoot-through in half-bridge configurations |
| Body diode with soft recovery | trr = 100–200 ns, Qrr = 0.33–0.66 μC - minimizes voltage overshoot and EMI during freewheeling in buck or flyback topologies |
Applications
| DC-DC Buck Converter High-Side Switch | Reverse Polarity Protection Circuit |
|---|---|
Use Scenario: Used as high-side synchronous rectifier or control switch in non-isolated buck regulators delivering 3.3–12 V from 24–48 V input rails. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch; operates in hard-switched mode with gate driven by dedicated high-side driver or bootstrap circuit. Use Value: -100 V rating accommodates input voltage surges; 0.60 Ω RDS(on) limits conduction loss to <2 W at 5 A; avalanche rating handles inductor current tail during shutdown. |
Use Scenario: Placed in series with power input to prevent damage from accidental reverse battery connection in industrial controllers or automotive accessories. IC Role / Device Role / Timing Role: Acts as ideal diode replacement; conducts only when VIN is correctly polarized relative to load ground. Use Value: Low RDS(on) eliminates forward voltage drop of mechanical fuse or Schottky diode; -100 V rating covers 48 V system transients; no reverse leakage beyond -100 μA at VDS = -100 V. |
| Motor Drive High-Side Load Switch | Hot-Swap Power Sequencing Controller |
Use Scenario: Controls power delivery to brushed DC motors in robotics or actuation systems where bidirectional control is not required. IC Role / Device Role / Timing Role: High-side power switch enabling ON/OFF control via microcontroller GPIO through level-shifting circuitry. Use Value: -5.6 A continuous rating supports typical 12 V/5 A motor loads; avalanche capability absorbs back-EMF spikes during abrupt stop; dV/dt immunity prevents false triggering during commutation noise. |
Use Scenario: Provides controlled inrush current limiting and fault isolation during hot-plug insertion of modules into backplane or modular power supplies. IC Role / Device Role / Timing Role: Acts as programmable series pass element; gate driven by dedicated hot-swap controller IC to ramp voltage linearly. Use Value: 18 nC Qg enables precise gate voltage slew control; RDS(on) stability over temperature ensures predictable current limiting; SOA curve supports safe linear-mode operation during startup. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiHFR9120-GE3 | Same die, identical electrical specs, Pb-free/halogen-free construction, same DPAK package | No functional difference; qualified for RoHS-compliant manufacturing and extended temperature storage | Select SiHFR9120-GE3 for new designs requiring full environmental compliance and long-term supply continuity |
| IRFU9120PbF | Same die, but in IPAK (TO-251) through-hole package; identical RDS(on), VDS, Qg, and avalanche ratings | Requires through-hole assembly and larger board area; better natural convection cooling but less suitable for dense SMT layouts | Choose IRFU9120PbF only when legacy through-hole assembly or higher standalone thermal performance without heatsink is prioritized |
Compared with IRFR9120, SiHFR9120-GE3 offers identical performance with enhanced environmental compliance, while IRFU9120PbF trades surface-mount convenience for improved thermal mass and mechanical robustness in through-hole applications - neither is pin-compatible due to differing package footprints.
Availability
IRFR9120 is available at Aetrix Electronics and suitable for DC-DC converters, reverse polarity protection circuits, and motor drive load switches requiring stable component supply across industrial, transportation, and embedded power systems.
Supply support for IRFR9120 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.
The IRFR9120 belongs to Vishay's third-generation power MOSFET product line, engineered for ruggedized high-voltage switching in space-constrained surface-mount power systems requiring fast dynamics and repeatable avalanche tolerance.
FAQ
What is the maximum continuous drain current for IRFR9120 at 100 °C case temperature?
The IRFR9120 maintains -5.6 A continuous drain current rating even at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and stable RDS(on) over temperature, enabling operation in high-ambient environments without derating below its 25 °C value - a key advantage over many competing P-channel MOSFETs.
Does IRFR9120 support logic-level gate drive?
The IRFR9120 has a gate threshold voltage range of -2.0 V to -4.0 V, meaning it can begin conducting at -2.0 V, but full enhancement requires VGS ≤ -10 V to achieve its rated 0.60 Ω RDS(on). While partial turn-on occurs at logic levels, reliable low-resistance operation demands -10 V drive - so external level shifting or dedicated gate drivers are recommended for use with 3.3 V or 5 V microcontrollers.
What is the thermal resistance from junction to ambient for IRFR9120 in standard PCB mount?
When mounted on a 1" square FR-4 PCB, the IRFR9120 exhibits a maximum junction-to-ambient thermal resistance (RthJA) of 50 °C/W. This value assumes standard copper pour practices and enables up to 2.5 W power dissipation at ambient temperature - significantly higher than typical SMT MOSFETs, thanks to its exposed drain pad and DPAK thermal design.
Can IRFR9120 be used in linear mode for hot-swap applications?
Yes, the IRFR9120 is characterized for safe linear-mode operation, supported by its SOA curve (Fig. 7) and 42 W maximum power dissipation at TC = 25 °C. Its low RDS(on) drift and stable transconductance allow predictable current limiting during hot-swap inrush control - provided gate drive is precisely regulated and thermal management meets RthJC = 3.0 °C/W requirements.
Is IRFR9120 pin-compatible with N-channel equivalents like IRFR3710?
No, IRFR9120 is not pin-compatible with N-channel devices such as IRFR3710. Although both use DPAK packages, their pinouts differ: IRFR9120 follows G-D-S (Gate-Drain-Source) arrangement, whereas IRFR3710 uses G-S-D. Swapping them without board revision will result in incorrect connections and potential failure - always verify pinout diagrams before substitution.
IRFR9120 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 600mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 390 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR9120 FAQ
1.How can I place an order for IRFR9120 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9120 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9120 reliable?
The price and inventory of IRFR9120 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9120 is usually 5 days.
3.What payment methods are accepted for IRFR9120?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9120 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9120?
IRFR9120 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9120 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9120?
For technical support, including IRFR9120 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9120 requirements.
6.How does Aetrix verify that IRFR9120 is sourced from the original manufacturer or authorized distributors?
All IRFR9120 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9120 meets industry standards.
7.What is the process for return or replacement of IRFR9120?
All IRFR9120 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9120, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9120 part is unused and in its original packaging.
Return procedure for IRFR9120:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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