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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR9120PBF-BE3

Name: IRFR9120PBF-BE3
Brand: Vishay Siliconix
SKU: IRFR9120PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR9120PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9120PBF-BE3.pdf

Description:: P-CHANNEL 100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR9120PBF-BE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -100 V drain-source voltage, 0.60 Ω R_DS(on) at V_GS = -10 V, and 5.6 A continuous drain current at T_C = 25 °C. It supports fast switching, repetitive avalanche operation, and is optimized for DC-DC converters, load switching, and high-side power control in industrial power supplies.

For engineers reviewing the IRFR9120PBF-BE3 datasheet, IRFR9120PBF-BE3 pinout, IRFR9120PBF-BE3 application, or IRFR9120PBF-BE3 equivalent, key selection criteria include its -100 V blocking capability, 18 nC total gate charge, 3.0 nC gate-source charge, -5.5 V/ns peak diode recovery dV/dt rating, and thermal resistance of 3.0 °C/W junction-to-case - all critical for high-reliability, medium-power switching designs.

Technical Context

This device employs third-generation trench-gate silicon technology to deliver ruggedized avalanche performance and low conduction loss. Its dynamic dV/dt rating (-5.5 V/ns) and unclamped inductive switching capability (E_AS = 210 mJ) enable robust operation in inductive load circuits without external snubbers.

The IRFR9120PBF-BE3 features a single P-channel configuration with integrated body diode (V_SD = -6.3 V at I_S = -5.6 A), reverse recovery time (t_rr) of 100–200 ns, and gate threshold voltage range of -2.0 V to -4.0 V - supporting both standard -10 V and logic-level-compatible gate drive schemes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - supports high-side switching in 48 V and 72 V industrial bus systems with margin.
R_DS(on)	0.60 Ω @ V_GS = -10 V - enables <1.9 W conduction loss at 5.6 A, suitable for thermally constrained PCB mounts.
Q_g	18 nC - determines gate driver power requirement and switching speed in hard-switched topologies.
I_D (cont.)	-5.6 A @ T_C = 25 °C - defines maximum steady-state current under heatsink-cooled conditions.
E_AS	210 mJ - allows safe energy absorption during unclamped inductive turn-off, reducing need for external clamping.
R_thJC	3.0 °C/W - enables direct thermal coupling to heatsinks or copper pour for >30 W power dissipation.
t_rr	100–200 ns - limits reverse recovery losses in synchronous rectification and bidirectional switching applications.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad on underside for thermal and electrical connection. Standard lead finish: matte tin over nickel (Pb-free, halogen-free).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Reference node for gate drive; connects to system ground or low-side return path in high-side configurations.
Pin 2 (Gate)	Control input (G)	Receives negative gate voltage relative to source to turn on; threshold -2.0 to -4.0 V ensures compatibility with standard logic-level drivers.
Pin 3 (Drain)	Power output (D)	High-current output node; electrically and thermally connected to exposed metal pad - must be routed to large copper area or heatsink.

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables reliable operation under transient overvoltage or inductive kickback without derating or external protection.
Dynamic dV/dt rating	-5.5 V/ns prevents spurious turn-on during fast voltage transients in high-noise motor or relay drive environments.
Fast switching	Turn-on delay 9.6 ns + rise time 29 ns enables >1 MHz operation in resonant and soft-switching converters.
Surface-mount (DPAK)	Compatible with vapor-phase and infrared reflow; recommended pad layout per AN826 ensures thermal reliability and solder joint integrity.
Integrated body diode	V_SD = -6.3 V @ -5.6 A enables freewheeling in buck and flyback topologies without discrete diode addition.

Applications

Industrial DC-DC Converters	High-Side Load Switches
Use Scenario: Step-down conversion from 48 V bus to 12 V/5 V rails in programmable logic controllers and sensor nodes. IC Role / Device Role / Timing Role: High-side synchronous rectifier or active clamp switch in buck or half-bridge topology. Use Value: Low R_DS(on) minimizes conduction loss; avalanche rating handles inductor current interruption during fault events.	Use Scenario: Controlled power-up sequencing for FPGA, microcontroller, or peripheral modules in factory automation equipment. IC Role / Device Role / Timing Role: P-channel high-side switch enabling ON/OFF control with simple gate pull-up/pull-down logic. Use Value: Gate threshold range (-2.0 to -4.0 V) allows direct interface with 3.3 V or 5 V GPIO; no level-shifter required.
Motor Drive Protection	Reverse Polarity Protection
Use Scenario: H-bridge upper-leg switch in 24–48 V brushed DC motor drives for conveyors and actuators. IC Role / Device Role / Timing Role: Power switching element handling bidirectional current with body diode freewheeling. Use Value: 200 ns max t_rr and 110 A/μs dI/dt capability ensure clean commutation and reduced EMI during direction reversal.	Use Scenario: Input protection circuit preventing damage from accidental battery or supply polarity reversal in portable test instruments. IC Role / Device Role / Timing Role: P-channel MOSFET placed in series with positive rail, conducting only when polarity is correct. Use Value: -100 V V_DS withstands surge transients; low R_DS(on) adds <300 mV drop at full load - negligible impact on efficiency.

Industrial DC-DC Converters

High-Side Load Switches

Use Scenario: Step-down conversion from 48 V bus to 12 V/5 V rails in programmable logic controllers and sensor nodes.

IC Role / Device Role / Timing Role: High-side synchronous rectifier or active clamp switch in buck or half-bridge topology.

Use Value: Low R_DS(on) minimizes conduction loss; avalanche rating handles inductor current interruption during fault events.

Use Scenario: Controlled power-up sequencing for FPGA, microcontroller, or peripheral modules in factory automation equipment.

IC Role / Device Role / Timing Role: P-channel high-side switch enabling ON/OFF control with simple gate pull-up/pull-down logic.

Use Value: Gate threshold range (-2.0 to -4.0 V) allows direct interface with 3.3 V or 5 V GPIO; no level-shifter required.

Motor Drive Protection

Reverse Polarity Protection

Use Scenario: H-bridge upper-leg switch in 24–48 V brushed DC motor drives for conveyors and actuators.

IC Role / Device Role / Timing Role: Power switching element handling bidirectional current with body diode freewheeling.

Use Value: 200 ns max t_rr and 110 A/μs dI/dt capability ensure clean commutation and reduced EMI during direction reversal.

Use Scenario: Input protection circuit preventing damage from accidental battery or supply polarity reversal in portable test instruments.

IC Role / Device Role / Timing Role: P-channel MOSFET placed in series with positive rail, conducting only when polarity is correct.

Use Value: -100 V V_DS withstands surge transients; low R_DS(on) adds <300 mV drop at full load - negligible impact on efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR9024NTRPBF	-60 V V_DS, 0.27 Ω R_DS(on), 10 nC Q_g - lower voltage rating but faster switching and lower loss at ≤48 V.	Not suitable for 72 V or 100 V bus systems; preferred in compact, high-frequency 24–48 V SMPS where size and efficiency dominate.	Select IRFR9024NTRPBF only if system V_IN ≤ 60 V and gate drive strength permits lower Q_g advantage.
SiHFR9120-GE3	Identical electrical specs and DPAK package; differs only in lead-free/halogen-free plating (GE3 vs BE3) and manufacturing location.	No functional or layout difference; fully interchangeable in new designs and RoHS-compliant production lines.	Choose SiHFR9120-GE3 for strict halogen-free compliance; IRFR9120PBF-BE3 remains valid for legacy or cost-sensitive builds.

Compared with IRFR9120PBF-BE3, IRFR9024NTRPBF trades off voltage headroom for improved switching efficiency below 60 V, while SiHFR9120-GE3 offers identical performance with enhanced environmental compliance - making the latter a drop-in replacement where RoHS/REACH requirements apply.

Availability

IRFR9120PBF-BE3 is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and reverse polarity protection circuits requiring stable component supply across multi-year production cycles.

Supply support for IRFR9120PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFR9120PBF-BE3 belongs to Vishay's third-generation power MOSFET family, engineered specifically for ruggedized, medium-voltage switching in space-constrained surface-mount applications where avalanche tolerance and thermal performance are critical.

FAQ

What is the maximum continuous drain current for IRFR9120PBF-BE3 at 100 °C case temperature?

The IRFR9120PBF-BE3 maintains -5.6 A continuous drain current even at T_C = 100 °C, per its Absolute Maximum Ratings table. This reflects its robust thermal design and stable R_DS(on) over temperature - critical for high-ambient industrial environments where forced cooling is limited.

Does IRFR9120PBF-BE3 support logic-level gate drive?

Yes, the IRFR9120PBF-BE3 has a gate-source threshold voltage range of -2.0 V to -4.0 V, allowing reliable turn-on with 3.3 V or 5 V logic-level signals when referenced to source. However, full enhancement (R_DS(on) = 0.60 Ω) requires V_GS = -10 V, so gate drivers should be sized accordingly for optimal conduction loss.

What is the thermal resistance from junction to ambient for IRFR9120PBF-BE3 in standard PCB mount?

When mounted on a 1" square FR-4 PCB, the IRFR9120PBF-BE3 exhibits R_thJA = 50 °C/W. This value assumes minimum recommended copper pad area per Application Note 826; adding thermal vias or larger copper pours can reduce this further, improving power handling in compact layouts.

Can IRFR9120PBF-BE3 be used in avalanche mode repeatedly?

Yes - the IRFR9120PBF-BE3 is explicitly rated for repetitive avalanche operation (I_AR = -5.6 A, E_AR = 4.2 mJ), with pulse width limited by junction temperature. This capability eliminates the need for external clamping diodes in many inductive switching applications, simplifying design and improving reliability.

Is the body diode of IRFR9120PBF-BE3 suitable for synchronous rectification?

The IRFR9120PBF-BE3 body diode has V_SD = -6.3 V at -5.6 A and t_rr = 100–200 ns, making it usable for low-frequency freewheeling but not ideal for high-frequency synchronous rectification due to relatively high forward drop and recovery time. For such applications, a dedicated Schottky or low-Q_rr MOSFET is recommended.

IRFR9120PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 5.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 390 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

IRFR9120PBF-BE3 FAQ

1.How can I place an order for IRFR9120PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9120PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9120PBF-BE3 reliable?

The price and inventory of IRFR9120PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9120PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFR9120PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9120PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9120PBF-BE3?

IRFR9120PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9120PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9120PBF-BE3?

For technical support, including IRFR9120PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9120PBF-BE3 requirements.

6.How does Aetrix verify that IRFR9120PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFR9120PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9120PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFR9120PBF-BE3?

All IRFR9120PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9120PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9120PBF-BE3 part is unused and in its original packaging.

Return procedure for IRFR9120PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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