My Inquiry
My Account
Vishay Siliconix IRFR9120TRL
- Part No.:
- IRFR9120TRL
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9120TRL.pdf
- Description:
- MOSFET P-CH 100V 5.6A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,995
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFR9120TRL from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -100 V drain-source voltage, 0.60 Ω RDS(on) at VGS = -10 V, and -5.6 A continuous drain current at TC = 25 °C. It features repetitive avalanche capability (EAS = 210 mJ), fast switching (tr = 29 ns, tf = 25 ns), and is optimized for high-efficiency DC-DC converters and motor control circuits.
For engineers reviewing the IRFR9120TRL datasheet, IRFR9120TRL pinout, IRFR9120TRL application, or IRFR9120TRL equivalent, this device is selected for high-side switching in industrial power supplies, battery protection circuits, and load-switching applications where ruggedness, low gate charge (Qg = 18 nC), and stable thermal performance under transient stress are critical.
Technical Context
This MOSFET employs third-generation trench-gate silicon technology to achieve low on-resistance while maintaining robust avalanche energy handling (EAS = 210 mJ) and high dV/dt immunity (-5.5 V/ns). Its gate threshold voltage range of -2.0 V to -4.0 V ensures reliable turn-on with standard logic-level drive.
The device integrates a fast-recovery body diode (trr = 100–200 ns, Qrr = 0.33–0.66 μC) and exhibits low dynamic capacitances (Ciss = 390 pF, Coss = 170 pF), enabling efficient operation in hard-switched topologies up to several hundred kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -100 V - Supports high-side switching in 48 V and 60 V bus systems without derating. |
| RDS(on) @ VGS = -10 V | 0.60 Ω - Enables <1.9 W conduction loss at -5.6 A, suitable for thermally constrained PCB-mount designs. |
| Qg | 18 nC - Low gate charge reduces driver power requirement and enables fast turn-on/turn-off with modest gate resistance. |
| ID (continuous) | -5.6 A @ TC = 25 °C - Rated for sustained current in heatsinked or high-copper PCB layouts. |
| EAS | 210 mJ - Withstands unclamped inductive switching events common in relay drivers and solenoid controls. |
| tr/tf | 29 ns / 25 ns - Supports high-frequency PWM operation with minimal switching loss in SMPS. |
| RthJC | 3.0 °C/W - Enables direct thermal coupling to heatsinks or copper planes for high-power pulse handling. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; standardized footprint per JEDEC MS-012.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connects to system ground or low-side return path. |
| Pin 2 (Gate) | Control input (G) | High-impedance input requiring <±100 nA leakage; driven by logic-level or dedicated gate driver. |
| Pin 3 (Drain) | Power output (D) | Exposed metal pad on bottom surface - must be soldered to large copper area for thermal dissipation and low-inductance current return. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Rated for unlimited repetitive EAS = 4.2 mJ pulses, enabling robust operation in inductive load switching without external snubbers. |
| Dynamic dV/dt immunity | Rated -5.5 V/ns - prevents false turn-on during high-slew-rate transients in noisy industrial environments. |
| Low Qgd/Qg ratio | Qgd = 9.0 nC / Qg = 18 nC = 50% - improves Miller immunity and enables stable high-speed switching with moderate gate resistance. |
| Fast body diode recovery | trr = 100–200 ns, Qrr = 0.33–0.66 μC - minimizes reverse recovery loss and EMI in synchronous rectification and freewheeling paths. |
| Pb-free and halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc. 99912. |
Applications
| Industrial Power Supply | Battery Protection Circuit |
|---|---|
|
Use Scenario: High-side switch in 48 V telecom or server PSU OR-ing and hot-swap controllers. IC Role / Device Role / Timing Role: P-channel MOSFET configured as active-high load switch controlling power rail sequencing and fault isolation. Use Value: -100 V rating accommodates input surge margins; low RDS(on) limits insertion loss; avalanche rating handles back-EMF during hot-plug events. |
Use Scenario: Reverse-polarity and overcurrent protection in Li-ion battery packs (e.g., 3S–5S). IC Role / Device Role / Timing Role: High-side disconnect switch placed between battery pack and load, controlled by protection IC. Use Value: Fast turn-off (tf = 25 ns) enables rapid fault response; body diode blocks reverse current; -5.6 A rating supports 2–3 A continuous pack current. |
| Motor Control Driver | DC-DC Converter High-Side Switch |
|
Use Scenario: Half-bridge high-side switch in 24 V brushed DC motor H-bridge drivers. IC Role / Device Role / Timing Role: P-channel power switch providing bidirectional current control with bootstrap-free gate drive. Use Value: -100 V VDS withstands motor inductive kickback; Qg = 18 nC allows direct microcontroller GPIO drive with RC gate network. |
Use Scenario: Synchronous buck converter high-side switch in point-of-load (POL) regulators for FPGAs or ASICs. IC Role / Device Role / Timing Role: Main switching element in non-isolated step-down topology operating at 300–500 kHz. Use Value: Low Coss (170 pF) and fast tr/tf reduce switching loss; RthJC = 3.0 °C/W supports thermal management via PCB copper. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR9024TRLPbF | VDS = -60 V, RDS(on) = 0.27 Ω @ -10 V, Qg = 16 nC - lower voltage rating but lower on-resistance and gate charge. | Not suitable for 48 V+ bus systems due to reduced VDS; better for 24 V motor drives or low-voltage POL converters. | Select when system VIN ≤ 40 V and lower conduction loss is prioritized over avalanche margin. |
| SiHFR9120-GE3 | Identical VDS, RDS(on), Qg, and package; Vishay second-source with same die and DPAK construction, differing only in lead finish (NiPdAu vs Pb-free matte Sn). | No functional or layout difference; fully interchangeable in design and qualification. | Preferred for new designs requiring GE3 suffix compliance; identical thermal and electrical behavior to IRFR9120TRL. |
Compared with IRFR9120TRL, IRFR9024TRLPbF trades off voltage headroom for lower RDS(on) and gate drive demand, while SiHFR9120-GE3 offers identical performance with alternate plating and RoHS documentation - making it a drop-in replacement for manufacturing continuity.
Availability
IRFR9120TRL is available at Aetrix Electronics and suitable for industrial power supplies, battery management systems, and motor control modules requiring stable component supply across multi-year production cycles.
Supply support for IRFR9120TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.
The IRFR9120TRL belongs to Vishay's third-generation high-voltage P-channel power MOSFET family, engineered for high-side switching in harsh industrial and automotive-adjacent environments where avalanche tolerance and thermal stability are mandatory.
FAQ
What is the maximum continuous drain current for IRFR9120TRL at 100 °C case temperature?
The IRFR9120TRL maintains -5.6 A continuous drain current rating even at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and low RDS(on) temperature coefficient, enabling stable operation in compact, heatsink-limited enclosures without current derating.
Does IRFR9120TRL support logic-level gate drive?
The IRFR9120TRL has a gate threshold voltage range of -2.0 V to -4.0 V, meaning it begins conducting at -2.0 V but requires -10 V for full enhancement (RDS(on) = 0.60 Ω). While it can turn on with -3 V or -5 V, full performance demands -10 V drive; for true logic-level operation, consider Vishay's -40 V IRFR9024TRL instead.
What is the thermal resistance from junction to ambient for IRFR9120TRL in standard PCB mount?
When mounted on a 1" square FR-4 PCB, the IRFR9120TRL exhibits RthJA = 50 °C/W. This value assumes recommended minimum pad layout per Application Note 826 and enables ~2.5 W power dissipation at TA = 25 °C before reaching TJ = 150 °C - critical for fanless or space-constrained designs.
Can IRFR9120TRL be used in avalanche mode repeatedly?
Yes - the IRFR9120TRL is explicitly rated for repetitive avalanche with EAR = 4.2 mJ per pulse (pulse width ≤ 300 μs, duty cycle ≤ 2 %). This capability is validated per Figure 12 and permits use in inductive switching applications like relay drivers without external clamping components.
What is the body diode forward voltage of IRFR9120TRL at -5.6 A and 25 °C?
The body diode forward voltage (VSD) of IRFR9120TRL is -6.3 V at IS = -5.6 A and TJ = 25 °C. This relatively high VSD reflects its high-voltage P-channel structure and indicates that synchronous rectification is not recommended; external Schottky diodes should be used for freewheeling paths where low forward drop is essential.
IRFR9120TRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 600mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 390 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR9120TRL FAQ
1.How can I place an order for IRFR9120TRL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9120TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9120TRL reliable?
The price and inventory of IRFR9120TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9120TRL is usually 5 days.
3.What payment methods are accepted for IRFR9120TRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9120TRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9120TRL?
IRFR9120TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9120TRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9120TRL?
For technical support, including IRFR9120TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9120TRL requirements.
6.How does Aetrix verify that IRFR9120TRL is sourced from the original manufacturer or authorized distributors?
All IRFR9120TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9120TRL meets industry standards.
7.What is the process for return or replacement of IRFR9120TRL?
All IRFR9120TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9120TRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9120TRL part is unused and in its original packaging.
Return procedure for IRFR9120TRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFR9120TRL Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
