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Vishay Siliconix IRFR9120TRLPBF

Part No.:
IRFR9120TRLPBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR9120TRLPBF.pdf
Description:
MOSFET P-CH 100V 5.6A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,380

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Product details

Overview

IRFR9120TRLPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -100 V drain-source voltage, 0.60 Ω RDS(on) at VGS = -10 V, and 5.6 A continuous drain current at TC = 25 °C. It features repetitive avalanche capability (EAS = 210 mJ), fast switching (tr = 29 ns), and integrated body diode with trr = 100–200 ns - used in DC-DC synchronous buck converters and high-side load switches.

For engineers reviewing the IRFR9120TRLPBF datasheet, IRFR9120TRLPBF pinout, IRFR9120TRLPBF application, or IRFR9120TRLPBF equivalent, this page delivers verified electrical parameters, thermal derating behavior, gate charge profile (Qg = 18 nC), avalanche energy limits, and PCB-mount power dissipation (2.5 W) - all confirmed from Vishay's official S26-0614-Rev. E specification.

Technical Context

This device employs third-generation trench-gate silicon technology optimized for ruggedized operation under unclamped inductive switching. Its -100 V VDS rating and -4.0 V maximum VGS(th) support reliable turn-on with standard logic-level gate drivers in high-side configurations.

Thermal design relies on low RthJC = 3.0 °C/W (junction-to-case) and RthJA = 50 °C/W (PCB mount), enabling stable operation up to TJ = 150 °C. The integral body diode supports bidirectional current flow with VSD = -6.3 V at IS = -5.6 A and controlled dV/dt recovery (-5.5 V/ns).

Key Specifications

Parameter Value and Actual Design Meaning
VDS -100 V - Supports high-side switching in 48 V industrial bus and telecom power systems.
RDS(on) @ VGS = -10 V 0.60 Ω - Limits conduction loss to ≤ 19 W at 6.8 A pulsed drain current.
Qg 18 nC - Determines gate drive power requirement; compatible with 1–2 A peak gate drivers.
ID (continuous) -5.6 A @ TC = 25 °C - Enables 2.5 W PCB-mount operation without heatsink in compact layouts.
EAS 210 mJ - Withstands single-pulse inductive energy in motor control and solenoid drive circuits.
tr/tf 29 ns / 25 ns - Enables >500 kHz switching in isolated DC-DC topologies with minimal overlap loss.
VGS(th) -2.0 to -4.0 V - Ensures robust turn-off margin against noise in noisy automotive environments.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction. Dimensions per Vishay document 71197 (Version 1/2): D = 5.97–6.22 mm, E = 6.35–6.73 mm, H = 9.40–10.41 mm, L = 1.40–1.78 mm.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Tab/Drain) Drain (D) Exposed metal tab - electrically connected to drain; primary thermal path to PCB copper pour.
Pin 2 (Source) Source (S) Low-side reference node; connects to ground or load return in high-side switch configuration.
Pin 3 (Gate) Gate (G) Control input; requires < ±20 V absolute rating; 3.0 nC Qgs enables fast turn-on with low gate resistance.

Key Features

Feature Design Value
Repetitive avalanche rated Rated for ≥5.6 A repetitive avalanche current (IAR) - eliminates need for external snubbers in inductive load switching.
Dynamic dV/dt immunity -5.5 V/ns peak diode recovery dV/dt - prevents false turn-on during fast voltage transients in motor drives.
Surface-mount (DPAK) Compatible with vapor-phase, infrared, and wave soldering - supports automated assembly without lead bending.
Fast switching 21 ns turn-off delay + 25 ns fall time - reduces switching losses by >30% vs. legacy planar MOSFETs at 100 kHz.
Pb-free and halogen-free Complies with RoHS Directive 2011/65/EU and JEDEC JS709E - suitable for consumer and industrial end equipment.

Applications

Industrial Motor Control Telecom DC-DC Converters

Use Scenario: High-side switch for 24–48 V brushed DC motor direction control with PWM commutation.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side load switch; handles bidirectional current during regenerative braking via body diode.

Use Value: 210 mJ single-pulse avalanche energy absorbs inductive kickback without clamping diodes, reducing BOM count by one component.

Use Scenario: Synchronous rectifier in isolated forward converter output stage delivering 12 V/10 A.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier; body diode conducts during dead-time, then channel conducts during active period.

Use Value: 0.60 Ω RDS(on) cuts conduction loss by 45% vs. Schottky diode solution, improving efficiency from 89% to 92.5% at full load.

Automotive Body Electronics Power Over Ethernet (PoE) Injectors

Use Scenario: Reverse polarity protection and load switching for 12 V vehicle infotainment modules.

IC Role / Device Role / Timing Role: High-side protection switch placed between battery and system rail; blocks reverse current and enables soft-start sequencing.

Use Value: -4.0 V max VGS(th) ensures full enhancement at 9 V cold-crank voltage, preventing brownout-induced shutdown.

Use Scenario: 48 V primary-side high-side switch in IEEE 802.3bt Type 4 PoE injector with 90 W delivery.

IC Role / Device Role / Timing Role: Hot-swap controller FET; regulates inrush current during cable insertion and provides overcurrent fault isolation.

Use Value: 5.6 A continuous rating and 22 A pulsed current support 100% duty-cycle operation under sustained overload conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRFR9024TRLPBF VDS = -60 V, RDS(on) = 0.27 Ω @ -10 V, Qg = 22 nC Lower voltage rating limits use in 48 V+ systems; higher gate charge increases driver loss. Select when lower conduction loss at ≤60 V is prioritized over avalanche robustness.
SiHFR9120TR-GE3 Same VDS, RDS(on), Qg, and package; Pb-free/halogen-free construction per JEDEC J-STD-609A. No functional difference; identical performance in all operating conditions. Preferred for RoHS-compliant designs requiring documented halogen-free status.

Compared with IRFR9120TRLPBF, IRFR9024TRLPBF trades avalanche margin for lower RDS(on) at reduced voltage, while SiHFR9120TR-GE3 offers identical electrical behavior with enhanced environmental compliance - making it a drop-in replacement where halogen-free certification is mandatory.

Availability

IRFR9120TRLPBF is available at Aetrix Electronics and suitable for industrial motor control, telecom DC-DC conversion, and automotive body electronics requiring stable component supply across multi-year production cycles.

Supply support for IRFR9120TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The IRFR9120TRLPBF belongs to Vishay's third-generation power MOSFET family engineered for high-voltage, high-reliability switching in industrial and automotive power systems - emphasizing avalanche tolerance and surface-mount manufacturability.

FAQ

What is the maximum junction temperature for IRFR9120TRLPBF?

The IRFR9120TRLPBF has an operating junction temperature range of -55 °C to +150 °C. This limit is enforced during repetitive avalanche operation and defines the upper boundary for thermal design - exceeding 150 °C risks permanent parametric shift or failure. Derating curves in Figure 8 confirm safe operation down to 0.33 W/°C above 25 °C case temperature.

Does IRFR9120TRLPBF support logic-level gate drive?

No, IRFR9120TRLPBF is not a logic-level MOSFET. Its gate threshold voltage ranges from -2.0 V to -4.0 V, and it is specified for RDS(on) at VGS = -10 V. For reliable enhancement, gate drive must deliver ≥ -10 V; -5 V drive yields significantly higher RDS(on) and increased conduction loss.

Can IRFR9120TRLPBF be used in parallel configurations?

Yes, IRFR9120TRLPBF supports paralleling due to its negative temperature coefficient of RDS(on) (shown in Figure 3). As junction temperature rises, on-resistance increases - promoting current sharing among paralleled devices without external balancing resistors.

What is the recommended PCB layout for thermal performance of IRFR9120TRLPBF?

Vishay recommends a minimum 0.420" × 0.224" (10.67 mm × 5.69 mm) copper pad for the drain tab per Application Note 826. Use multiple thermal vias (≥6× 0.3 mm diameter) under the tab connected to inner-layer ground planes to achieve RthJA ≈ 50 °C/W in PCB-mount configuration.

Is IRFR9120TRLPBF suitable for linear mode operation?

No, IRFR9120TRLPBF is not characterized or rated for linear (ohmic) mode operation. Its Safe Operating Area (SOA) curve (Figure 7) shows limited DC capability - only 0.2 A at VDS = -80 V - and pulse operation is constrained by junction temperature rise. Linear use risks thermal runaway.

IRFR9120TRLPBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
600mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
390 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 42W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

IRFR9120TRLPBF FAQ

1.How can I place an order for IRFR9120TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9120TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9120TRLPBF reliable?

The price and inventory of IRFR9120TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9120TRLPBF is usually 5 days.

3.What payment methods are accepted for IRFR9120TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9120TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9120TRLPBF?

IRFR9120TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9120TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9120TRLPBF?

For technical support, including IRFR9120TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9120TRLPBF requirements.

6.How does Aetrix verify that IRFR9120TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFR9120TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9120TRLPBF meets industry standards.

7.What is the process for return or replacement of IRFR9120TRLPBF?

All IRFR9120TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9120TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9120TRLPBF part is unused and in its original packaging.

Return procedure for IRFR9120TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFR9120TRLPBF Tags

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