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Vishay Siliconix IRFR9120TRLPBF-BE3
- Part No.:
- IRFR9120TRLPBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9120TRLPBF-BE3.pdf
- Description:
- MOSFET P-CH 100V 5.6A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,674
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Product details
Overview
IRFR9120TRLPBF-BE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -100 V drain-source voltage, 0.60 Ω RDS(on) at VGS = -10 V, and -5.6 A continuous drain current at TC = 25 °C. It supports fast switching, repetitive avalanche operation, and is used in DC-DC converters, motor control H-bridge high-side switches, and load switching applications.
For engineers reviewing the IRFR9120TRLPBF-BE3 datasheet, IRFR9120TRLPBF-BE3 pinout, IRFR9120TRLPBF-BE3 application, or IRFR9120TRLPBF-BE3 equivalent, key selection criteria include its -100 V VDS, 0.60 Ω on-resistance, 18 nC total gate charge, DPAK thermal performance (RthJC = 3.0 °C/W), and avalanche energy rating of 210 mJ (single-pulse).
Technical Context
This device belongs to Vishay's third-generation high-voltage P-channel MOSFET family optimized for ruggedness and cost-effective surface-mount power switching. Its design integrates dynamic dV/dt immunity, intrinsic body diode with 100–200 ns reverse recovery time, and gate drive compatibility with standard -10 V logic-level signals.
The IRFR9120TRLPBF-BE3 operates as a high-side switch in buck regulators and half-bridge topologies, leveraging its -5.6 A continuous current capability and 42 W maximum power dissipation at TC = 25 °C. Its junction-to-case thermal resistance of 3.0 °C/W enables efficient heat transfer to PCB copper or external heatsinks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -100 V - Supports high-side switching in 48 V industrial bus and 100 V DC link applications |
| RDS(on) | 0.60 Ω @ VGS = -10 V - Enables ≤3.2 W conduction loss at -5.6 A, critical for thermally constrained layouts |
| Qg | 18 nC - Determines gate driver current requirement (~1.8 mA avg. for 100 kHz switching with 10 V swing) |
| ID (cont.) | -5.6 A @ TC = 25 °C - Defines usable current in PCB-mounted thermal conditions without forced cooling |
| EAS | 210 mJ - Allows unclamped inductive turn-off in motor drive snubberless designs up to specified L × I²/2 |
| RthJC | 3.0 °C/W - Confirms direct thermal path from die to case; requires ≥1"² FR-4 copper pour for 2.5 W ambient-rated operation |
| VGS(th) | -2.0 to -4.0 V - Ensures reliable turn-on with standard -5 V or -10 V gate drivers; avoids partial enhancement near threshold |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. Standard lead finish: Pb-free and halogen-free per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab / Pin 2 (Drain) | Power output terminal / Heat sink interface | Electrically connected to internal MOSFET drain; must be soldered to large copper area for thermal management and low-inductance return path |
| Pin 1 (Gate) | Control input | High-impedance MOSFET gate requiring <100 nA leakage current; sensitive to ESD; routed away from noisy power traces |
| Pin 3 (Source) | Reference node / Current return | Common reference for gate drive and load current; forms source-follower configuration when used in high-side switch |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables robust operation under inductive load switching faults without external clamping, with 4.2 mJ per pulse limit |
| Dynamic dV/dt rating | Withstands -5.5 V/ns transient voltage slew rates, reducing false turn-on risk in high-noise motor drive environments |
| Fast switching | 29 ns rise time and 25 ns fall time (at VDD = -50 V, ID = -6.8 A) support >200 kHz PWM in SMPS designs |
| P-channel configuration | Simplifies high-side drive architecture by eliminating bootstrap capacitors or isolated supplies required for N-channel high-side use |
| Tape-and-reel packaging | Supports automated SMT placement (IRFR9120TRLPBF-BE3 is supplied in tape-and-reel format per ordering code) |
Applications
| DC-DC Buck Converter High-Side Switch | Brushed DC Motor H-Bridge |
|---|---|
Use Scenario: Step-down regulation from 48 V input to 12 V output in industrial power supplies. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch controlling power delivery during ON-time; operates with complementary low-side N-MOSFET. Use Value: Low 0.60 Ω RDS(on) minimizes conduction loss at 5 A load, while 18 nC Qg enables efficient gate drive with standard controller ICs. | Use Scenario: Bidirectional speed control of 24 V brushed DC motors in automation actuators. IC Role / Device Role / Timing Role: Upper-leg P-channel switch in H-bridge topology; paired with N-channel lower-leg devices for direction reversal. Use Value: -100 V VDS rating accommodates back-EMF spikes up to 80 V; avalanche capability handles inductive kickback without external TVS. |
| Hot-Swap Load Switch | LED String Power Control |
Use Scenario: Inrush-limited insertion of 36 V subsystems into live backplane power rails. IC Role / Device Role / Timing Role: Main series pass element controlled via slow-ramp gate driver to limit dI/dt during insertion. Use Value: Repetitive avalanche rating and -5.6 A continuous current support safe fault clearing during hot-plug transients. | Use Scenario: Constant-current dimming of high-brightness LED strings in signage and architectural lighting. IC Role / Device Role / Timing Role: High-side current regulator switch modulated via PWM to adjust average LED current. Use Value: Fast 29 ns rise time ensures precise duty-cycle fidelity at 1–5 kHz dimming frequencies; low RDS(on) reduces thermal derating needs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR9120PbF | Same die, identical electrical specs, but supplied in bulk (non-tape-and-reel) packaging; no -BE3 facility code | No difference in circuit function or layout; differs only in logistics handling and reel quantity | Select IRFR9120TRLPBF-BE3 for automated SMT production; choose IRFR9120PbF for prototyping or low-volume hand assembly |
| SiHFR9120-GE3 | Same Vishay die, Pb-free/halogen-free, but manufactured at alternate facility (GE3 suffix); identical VDS, RDS(on), Qg, and thermal specs | Drop-in compatible in all electrical and mechanical respects; JEDEC TO-252 footprint and pinout preserved | SiHFR9120-GE3 is suitable where RoHS-compliant material declaration (per Vishay Doc. 99912) is mandatory; otherwise functionally interchangeable |
Compared with IRFR9120TRLPBF-BE3, IRFR9120PbF lacks tape-and-reel convenience for SMT lines, while SiHFR9120-GE3 offers identical performance with formal halogen-free certification-both retain the same -100 V rating, 0.60 Ω on-resistance, and DPAK thermal interface for drop-in replacement in existing designs.
Availability
IRFR9120TRLPBF-BE3 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, and hot-swap load switching requiring stable component supply across multi-year production cycles.
Supply support for IRFR9120TRLPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.
The IRFR9120TRLPBF-BE3 belongs to Vishay's third-generation high-voltage P-channel power MOSFET product line, engineered for surface-mount switching in industrial, automotive, and telecom power systems where avalanche tolerance and thermal efficiency are critical.
FAQ
What is the maximum continuous drain current rating for IRFR9120TRLPBF-BE3 at 100 °C case temperature?
The IRFR9120TRLPBF-BE3 maintains a continuous drain current rating of -5.6 A at TC = 100 °C, matching its rating at 25 °C due to linear derating starting above 100 °C. This reflects its robust thermal design and stable RDS(on) over temperature, confirmed in the Absolute Maximum Ratings table and Fig. 8 of the Vishay datasheet (Doc. #91280).
Does IRFR9120TRLPBF-BE3 support logic-level gate drive?
No, IRFR9120TRLPBF-BE3 is not a logic-level MOSFET. Its gate-source threshold voltage ranges from -2.0 V to -4.0 V, and it is specified for full enhancement at VGS = -10 V. For reliable switching, a -10 V gate drive is required to achieve the rated 0.60 Ω RDS(on); -5 V drive yields significantly higher on-resistance and is not guaranteed per datasheet specifications.
What is the avalanche energy rating of IRFR9120TRLPBF-BE3, and how is it tested?
The IRFR9120TRLPBF-BE3 has a single-pulse avalanche energy rating of 210 mJ, measured under conditions of VDD = -25 V, starting TJ = 25 °C, L = 10 mH, Rg = 25 Ω, and IAS = -5.6 A (per Fig. 12 test circuit). This rating validates its ability to absorb inductive energy during unclamped inductive switching events without failure.
Can IRFR9120TRLPBF-BE3 be used in parallel configurations?
Yes, IRFR9120TRLPBF-BE3 can be paralleled for higher current handling, provided gate drive impedance and PCB layout symmetry are carefully matched. Its negative temperature coefficient of RDS(on) (shown in Fig. 3) promotes current sharing, but individual gate resistors and Kelvin source connections are recommended to ensure balanced dynamic performance and avoid oscillation.
What is the thermal resistance from junction to ambient for IRFR9120TRLPBF-BE3 in standard PCB mount?
When mounted on a 1" square FR-4 PCB, the IRFR9120TRLPBF-BE3 exhibits a maximum junction-to-ambient thermal resistance (RthJA) of 50 °C/W. This value assumes standard JEDEC test conditions and defines the upper bound for passive cooling; actual performance improves with larger copper areas or thermal vias under the drain pad.
IRFR9120TRLPBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 600mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 390 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
IRFR9120TRLPBF-BE3 FAQ
1.How can I place an order for IRFR9120TRLPBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9120TRLPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9120TRLPBF-BE3 reliable?
The price and inventory of IRFR9120TRLPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9120TRLPBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFR9120TRLPBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9120TRLPBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9120TRLPBF-BE3?
IRFR9120TRLPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9120TRLPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9120TRLPBF-BE3?
For technical support, including IRFR9120TRLPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9120TRLPBF-BE3 requirements.
6.How does Aetrix verify that IRFR9120TRLPBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFR9120TRLPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9120TRLPBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFR9120TRLPBF-BE3?
All IRFR9120TRLPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9120TRLPBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9120TRLPBF-BE3 part is unused and in its original packaging.
Return procedure for IRFR9120TRLPBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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