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Vishay Siliconix IRFR9210PBF
- Part No.:
- IRFR9210PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9210PBF.pdf
- Description:
- MOSFET P-CH 200V 1.9A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,125
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Product details
Overview
IRFR9210PBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -200 V drain-source voltage, 3.0 Ω RDS(on) at VGS = -10 V, and -1.9 A continuous drain current at TC = 25 °C. It delivers fast switching with 8.9 nC total gate charge and supports repetitive avalanche operation up to 2.5 mJ, making it suitable for high-voltage DC-DC converters and motor control circuits.
For engineers reviewing the IRFR9210PBF datasheet, IRFR9210PBF pinout, IRFR9210PBF application, or IRFR9210PBF equivalent, key selection considerations include its -200 V blocking capability, DPAK thermal performance (RthJC = 5.0 °C/W), body diode reverse recovery time (110–220 ns), and Pb-free/halogen-free compliance per JEDEC TO-252 outline.
Technical Context
This device employs planar vertical DMOS technology optimized for high-voltage ruggedness and low on-resistance. Its gate threshold voltage range of -2.0 V to -4.0 V ensures reliable turn-on with standard logic-level drive, while dynamic dV/dt rating (-5.0 V/ns) enables stable operation in noisy high-side switching topologies.
The integrated body diode supports synchronous rectification and freewheeling in buck and half-bridge configurations. Repetitive avalanche capability (IAR = -1.9 A, EAR = 2.5 mJ) and unclamped inductive switching robustness allow operation without external snubbers in moderate-energy inductive loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -200 V - Supports high-voltage DC bus isolation in industrial power supplies and battery management systems. |
| RDS(on) | 3.0 Ω @ VGS = -10 V - Enables low conduction loss in low-current, high-voltage switching applications (e.g., <2 A load). |
| Qg | 8.9 nC - Determines gate drive power requirement; compatible with standard MOSFET drivers (e.g., TC442x, UCC3732x). |
| ID (cont.) | -1.9 A @ TC = 25 °C - Defines maximum steady-state current under heatsink-cooled conditions. |
| EAS | 300 mJ - Specifies single-pulse avalanche energy handling; critical for overvoltage transient protection in inductive switching. |
| trr | 110–220 ns - Governs body diode recovery behavior; impacts switching loss and EMI in hard-switched topologies. |
| RthJC | 5.0 °C/W - Indicates junction-to-case thermal resistance; enables accurate heatsink sizing when mounted on PCB copper pour. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. Standard lead finish: matte tin over nickel (Pb-free, halogen-free). Dimensions conform to JEDEC MO-236AA.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connects to system ground or low-side return path in high-side switch configuration. |
| Pin 2 (Gate) | Control input (G) | High-impedance MOSFET gate; requires <±20 V absolute max rating; typical drive: -10 V for full enhancement. |
| Pin 3 (Drain) | Power output (D) | Exposed metal tab (Drain) - must be soldered to large PCB copper area or heatsink for thermal management and current return. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables reliable operation under inductive load transients without external clamping, reducing BOM count in motor drives. |
| Dynamic dV/dt rating | -5.0 V/ns immunity prevents false turn-on during high dv/dt events in high-side switch applications. |
| Pb-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 1 moisture sensitivity level (MSL-1). |
| Surface-mount (DPAK) | Optimized for automated assembly; recommended pad layout per Vishay AN826 supports thermal reliability and solder joint integrity. |
| Fast switching | Turn-on delay (8.0 ns), rise time (12 ns), turn-off delay (11 ns), fall time (13 ns) enable >100 kHz operation in SMPS designs. |
Applications
| Industrial Power Supplies | Motor Control Circuits |
|---|---|
|
Use Scenario: High-voltage auxiliary bias supply in 400 V DC industrial inverters. IC Role / Device Role / Timing Role: P-channel high-side switch regulating isolated +15 V rail for gate drivers. Use Value: -200 V VDS rating withstands reflected transients; 3.0 Ω RDS(on) limits conduction loss at 1.2 A load current. |
Use Scenario: Brake FET in 24–48 V brushed DC motor controllers. IC Role / Device Role / Timing Role: Low-duty-cycle, high-peak-current switch dissipating <1 W average power. Use Value: Repetitive avalanche rating (2.5 mJ) absorbs back-EMF energy during forced commutation without failure. |
| Battery Management Systems | LED Driver Circuits |
|
Use Scenario: High-side disconnect switch in 48 V telecom battery backup modules. IC Role / Device Role / Timing Role: Load switch enabling/disabling downstream DC-DC converters during fault conditions. Use Value: -1.9 A continuous current supports >95% system availability; Qg = 8.9 nC allows fast response (<10 μs) to fault signals. |
Use Scenario: Dimming FET in constant-current LED string drivers for signage and architectural lighting. IC Role / Device Role / Timing Role: PWM-controlled current sink operating at 1–10 kHz with minimal thermal rise. Use Value: Body diode trr (110–220 ns) minimizes cross-conduction loss during PWM transitions; DPAK footprint simplifies thermal design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR9120PBF | VDS = -200 V, RDS(on) = 1.4 Ω @ -10 V, Qg = 14 nC - lower on-resistance but higher gate charge. | Better conduction efficiency at >1.5 A, but slower switching and higher drive power demand. | Prefer IRFR9120PBF where conduction loss dominates; IRFR9210PBF where switching speed and gate drive simplicity are prioritized. |
| SiHFR9210-GE3 | Identical VDS, RDS(on), Qg, and package; Vishay second-source with GE3 suffix denoting alternate Pb-free plating process. | No functional difference; qualified for same automotive and industrial temperature ranges (-55 to +150 °C). | SiHFR9210-GE3 offers supply chain diversification with identical electrical and thermal performance to IRFR9210PBF. |
Compared with IRFR9120PBF, IRFR9210PBF trades 2.14× higher RDS(on) for 37% lower Qg, favoring high-frequency, low-duty-cycle use cases; versus SiHFR9210-GE3, it shares identical specs but differs only in manufacturing location and plating traceability (BE3 vs. GE3).
Availability
IRFR9210PBF is available at Aetrix Electronics and suitable for industrial power supplies, motor control circuits, and battery management systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for IRFR9210PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.
The IRFR9210PBF belongs to Vishay's high-voltage P-channel Power MOSFET family, engineered for demanding industrial and automotive applications where avalanche robustness, surface-mount compatibility, and thermal stability are critical.
FAQ
What is the maximum continuous drain current for IRFR9210PBF at 100 °C case temperature?
The maximum continuous drain current for IRFR9210PBF is -1.2 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package; operation above this current requires active cooling or reduced ambient temperature to maintain junction temperature ≤150 °C. The IRFR9210PBF datasheet confirms this value under "Continuous drain current" with footnote indicating TC = 100 °C condition.
Does IRFR9210PBF have a built-in body diode, and what are its key parameters?
Yes, IRFR9210PBF integrates a parasitic body diode inherent to its vertical MOSFET structure. Key parameters include continuous source-drain current of -1.9 A, pulsed forward current of -7.6 A, forward voltage of -5.8 V at -1.9 A and 25 °C, and reverse recovery time of 110–220 ns. These values are measured per standard test conditions in the "Drain-Source Body Diode Characteristics" section of the IRFR9210PBF datasheet.
What is the gate-source threshold voltage range for IRFR9210PBF, and how does it affect drive requirements?
The gate-source threshold voltage (VGS(th)) for IRFR9210PBF is -2.0 V to -4.0 V, measured at VDS = VGS and ID = -250 μA. This range ensures turn-on with logic-level negative gate drive (e.g., -5 V), but full enhancement requires VGS ≤ -10 V to achieve the specified 3.0 Ω RDS(on). The IRFR9210PBF datasheet specifies this in the "Static" subsection of the Electrical Specifications table.
Can IRFR9210PBF be used in avalanche mode, and what are the safe operating limits?
Yes, IRFR9210PBF is explicitly rated for repetitive avalanche operation with IAR = -1.9 A and EAR = 2.5 mJ, and single-pulse avalanche energy of 300 mJ. Safe operation requires limiting pulse width per Figure 11 and maintaining TJ ≤ 150 °C. The IRFR9210PBF datasheet defines these limits in the "Absolute Maximum Ratings" and "Repetitive avalanche current" notes, confirming ruggedness beyond standard SOA boundaries.
What is the thermal resistance from junction to case (RthJC) for IRFR9210PBF, and how is it used in thermal design?
The maximum junction-to-case (drain) thermal resistance (RthJC) for IRFR9210PBF is 5.0 °C/W, as stated in the Thermal Resistance Ratings table. This value is used to calculate temperature rise from junction to heatsink interface: ΔT = PD × RthJC. For example, at 2.5 W dissipation, junction-to-case rise is 12.5 °C. The IRFR9210PBF datasheet specifies this parameter under "Maximum junction-to-case (drain)" with no min/typ values - only max.
IRFR9210PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.9 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 170 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR9210PBF FAQ
1.How can I place an order for IRFR9210PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9210PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9210PBF reliable?
The price and inventory of IRFR9210PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9210PBF is usually 5 days.
3.What payment methods are accepted for IRFR9210PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9210PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9210PBF?
IRFR9210PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9210PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9210PBF?
For technical support, including IRFR9210PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9210PBF requirements.
6.How does Aetrix verify that IRFR9210PBF is sourced from the original manufacturer or authorized distributors?
All IRFR9210PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9210PBF meets industry standards.
7.What is the process for return or replacement of IRFR9210PBF?
All IRFR9210PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9210PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9210PBF part is unused and in its original packaging.
Return procedure for IRFR9210PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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