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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR9210PBF-BE3

Name: IRFR9210PBF-BE3
Brand: Vishay Siliconix
SKU: IRFR9210PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR9210PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9210PBF-BE3.pdf

Description:: P-CHANNEL 200V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR9210PBF-BE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -200 V drain-source voltage, 3.0 Ω R_DS(on) at V_GS = -10 V, and -1.9 A continuous drain current at T_C = 25 °C. It supports fast switching, repetitive avalanche operation, and is optimized for high-voltage DC-DC converters and industrial motor control.

For engineers reviewing the IRFR9210PBF-BE3 datasheet, IRFR9210PBF-BE3 pinout, IRFR9210PBF-BE3 application, or IRFR9210PBF-BE3 equivalent, key selection criteria include its -200 V blocking capability, low gate charge (8.9 nC), rugged avalanche rating (300 mJ single-pulse), and thermal resistance of 5.0 °C/W junction-to-case - critical for compact high-reliability power stage designs.

Technical Context

This device employs trench-gate vertical DMOS technology to achieve high voltage tolerance with low on-resistance and fast switching dynamics. Its gate threshold voltage range (-2.0 V to -4.0 V) ensures reliable turn-on with standard -10 V gate drive while maintaining noise immunity.

The integrated body diode exhibits 110–220 ns reverse recovery time and -5.8 V forward voltage at -1.9 A, enabling use in synchronous rectification and freewheeling paths where controlled diode conduction is required without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-200 V - supports high-side switching in 100–170 V DC bus systems without series stacking
R_DS(on)	3.0 Ω @ V_GS = -10 V - enables <1.1 W conduction loss at -1.9 A, suitable for thermally constrained PCB mounts
Q_g	8.9 nC - allows efficient gate driving with low-power controllers; reduces switching losses below 100 kHz
E_AS	300 mJ - provides robust unclamped inductive switching margin in relay drivers and solenoid controls
R_thJC	5.0 °C/W - permits direct heatsink mounting for >20 W power dissipation when used with thermal pad
t_r/t_f	12 ns / 13 ns - supports clean edge transitions in PWM-based power supplies with minimal ringing
V_SD	-5.8 V @ I_S = -1.9 A - defines forward drop during body diode conduction in half-bridge freewheeling

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for automated assembly and high-current PCB routing.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Reference node for gate drive; connects to load return or ground in high-side switch configurations
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate requiring <100 nA leakage current; driven by -10 V for full enhancement
Pin 3 (Drain)	Power output (D)	Exposed metal pad on underside - electrically and thermally connected to drain; must be soldered to large copper area

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables reliable operation under transient overloads up to -1.9 A without derating, eliminating need for external clamping
Dynamic dV/dt rating	-5.0 V/ns - suppresses false turn-on in noisy high-dv/dt environments such as motor phase legs
Surface-mount DPAK	Compatible with vapor-phase and IR reflow; footprint matches JEDEC TO-252AA for board-level interchangeability
Low Q_gd/Q_g ratio	3.9/8.9 ≈ 44% - improves Miller immunity and reduces risk of shoot-through in bridge topologies
Body diode trr	110–220 ns - enables use in non-synchronous buck or flyback converters without external diode replacement

Applications

Industrial Motor Control	High-Voltage DC-DC Converters
Use Scenario: High-side switch in 3-phase inverter half-bridge leg driving 100–150 V DC brushed motors. IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled high-side power delivery with integrated body diode freewheeling. Use Value: Eliminates need for level-shifting gate drivers; -200 V rating accommodates bus transients; 300 mJ E_AS withstands inductive kickback during abrupt shutdown.	Use Scenario: Synchronous rectifier or main switch in isolated flyback or forward converter operating from 120 V AC rectified input. IC Role / Device Role / Timing Role: Primary-side switching element handling high-voltage, low-duty-cycle pulse trains. Use Value: 3.0 Ω R_DS(on) limits conduction loss at light loads; 8.9 nC Q_g enables efficient 65–100 kHz operation with standard PWM ICs.
Relay/Solenoid Drivers	Overvoltage Protection Circuits
Use Scenario: Solid-state replacement for electromechanical relays controlling 48–96 V DC solenoids in factory automation. IC Role / Device Role / Timing Role: Low-frequency switching power switch with built-in avalanche energy absorption. Use Value: 300 mJ single-pulse avalanche rating absorbs inductive energy without snubbers; -200 V V_DS headroom prevents breakdown during coil flyback.	Use Scenario: Crowbar or clamp element in telecom power supply front-end protecting downstream circuitry from >150 V surges. IC Role / Device Role / Timing Role: Voltage-triggered protection switch activated via external gate control during overvoltage events. Use Value: Fast 12 ns rise time ensures rapid response; -200 V rating exceeds ITU-T K.20 surge requirements; rugged construction sustains repeated clamping cycles.

Industrial Motor Control

High-Voltage DC-DC Converters

Use Scenario: High-side switch in 3-phase inverter half-bridge leg driving 100–150 V DC brushed motors.

IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled high-side power delivery with integrated body diode freewheeling.

Use Value: Eliminates need for level-shifting gate drivers; -200 V rating accommodates bus transients; 300 mJ E_AS withstands inductive kickback during abrupt shutdown.

Use Scenario: Synchronous rectifier or main switch in isolated flyback or forward converter operating from 120 V AC rectified input.

IC Role / Device Role / Timing Role: Primary-side switching element handling high-voltage, low-duty-cycle pulse trains.

Use Value: 3.0 Ω R_DS(on) limits conduction loss at light loads; 8.9 nC Q_g enables efficient 65–100 kHz operation with standard PWM ICs.

Relay/Solenoid Drivers

Overvoltage Protection Circuits

Use Scenario: Solid-state replacement for electromechanical relays controlling 48–96 V DC solenoids in factory automation.

IC Role / Device Role / Timing Role: Low-frequency switching power switch with built-in avalanche energy absorption.

Use Value: 300 mJ single-pulse avalanche rating absorbs inductive energy without snubbers; -200 V V_DS headroom prevents breakdown during coil flyback.

Use Scenario: Crowbar or clamp element in telecom power supply front-end protecting downstream circuitry from >150 V surges.

IC Role / Device Role / Timing Role: Voltage-triggered protection switch activated via external gate control during overvoltage events.

Use Value: Fast 12 ns rise time ensures rapid response; -200 V rating exceeds ITU-T K.20 surge requirements; rugged construction sustains repeated clamping cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR9120PBF	V_DS = -200 V, R_DS(on) = 4.5 Ω @ -10 V, Q_g = 7.0 nC	Higher on-resistance increases conduction loss by ~50%; lower Q_g slightly improves switching efficiency	Prefer when gate drive strength is limited but thermal margin exists for higher R_DS(on)
SiHFR9210-GE3	Same V_DS, R_DS(on), Q_g, and package; Pb-free/halogen-free construction	No functional difference; identical electrical and thermal performance	Select for RoHS-compliant production; fully interchangeable in layout and drive circuitry

Compared with IRFR9210PBF-BE3, IRFR9120PBF trades lower gate charge for significantly higher conduction loss, while SiHFR9210-GE3 offers identical performance with environmental compliance - making it the preferred drop-in replacement for new designs requiring lead-free assembly.

Availability

IRFR9210PBF-BE3 is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC conversion, and relay/solenoid driver applications requiring stable component supply across extended production lifecycles.

Supply support for IRFR9210PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal efficiency.

The IRFR9210PBF-BE3 belongs to Vishay's high-voltage P-channel Power MOSFET product line, engineered for industrial power switching where avalanche robustness, high blocking voltage, and surface-mount compatibility are essential.

FAQ

What is the maximum continuous drain current rating for IRFR9210PBF-BE3 at 100 °C case temperature?

The IRFR9210PBF-BE3 has a continuous drain current rating of -1.2 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package under sustained high-temperature operation and must be applied when ambient or heatsink conditions prevent the case from remaining at 25 °C. Designers should verify junction temperature using R_thJC = 5.0 °C/W and actual power dissipation.

Does IRFR9210PBF-BE3 require a negative gate voltage to operate, and what is its threshold range?

Yes, IRFR9210PBF-BE3 is a P-channel MOSFET and requires a gate voltage more negative than the source to conduct. Its gate-source threshold voltage (V_GS(th)) ranges from -2.0 V to -4.0 V at I_D = -250 μA. Full enhancement occurs at V_GS = -10 V, delivering the specified 3.0 Ω R_DS(on); operation at -5 V yields partial conduction and higher on-resistance.

Can IRFR9210PBF-BE3 be used in avalanche mode repeatedly, and what are the limits?

Yes, IRFR9210PBF-BE3 is explicitly rated for repetitive avalanche operation with I_AR = -1.9 A and E_AR = 2.5 mJ per pulse. These ratings assume pulse width is limited by junction temperature (T_J ≤ 150 °C) and duty cycle remains ≤2%, as defined in Figure 11 of the datasheet. Single-pulse avalanche energy is higher at 300 mJ, but repetitive use must stay within the specified I_AR/E_AR envelope.

What is the thermal resistance from junction to ambient for IRFR9210PBF-BE3 when mounted on a 1" square PCB?

When mounted on a 1" square FR-4 PCB, the IRFR9210PBF-BE3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 50 °C/W, as stated in the Thermal Resistance Ratings table. This value assumes standard PCB copper area and no external heatsink; actual performance depends on copper thickness, layer count, and airflow. For higher power, the exposed drain pad should be connected to a dedicated thermal plane.

Is IRFR9210PBF-BE3 pin-compatible with other DPAK P-channel MOSFETs like IRFR9024 or IRFR9120?

IRFR9210PBF-BE3 shares the standard 3-pin DPAK (TO-252) footprint with IRFR9024 and IRFR9120, making it mechanically pin-compatible. However, electrical differences exist: IRFR9024 has V_DS = -60 V and R_DS(on) = 0.22 Ω, while IRFR9120 has R_DS(on) = 4.5 Ω at -200 V. Substitution requires verification of voltage, current, and thermal requirements - IRFR9210PBF-BE3 is not a direct functional replacement for either without circuit review.

IRFR9210PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 1.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 170 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

IRFR9210PBF-BE3 FAQ

1.How can I place an order for IRFR9210PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9210PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9210PBF-BE3 reliable?

The price and inventory of IRFR9210PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9210PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFR9210PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9210PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9210PBF-BE3?

IRFR9210PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9210PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9210PBF-BE3?

For technical support, including IRFR9210PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9210PBF-BE3 requirements.

6.How does Aetrix verify that IRFR9210PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFR9210PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9210PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFR9210PBF-BE3?

All IRFR9210PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9210PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9210PBF-BE3 part is unused and in its original packaging.

Return procedure for IRFR9210PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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