My Inquiry
My Account
Vishay Siliconix IRFR9210TRR
- Part No.:
- IRFR9210TRR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9210TRR.pdf
- Description:
- MOSFET P-CH 200V 1.9A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,937
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFR9210TRR from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -200 V drain-source voltage, 3.0 Ω RDS(on) at VGS = -10 V, and -1.9 A continuous drain current at TC = 25 °C. It delivers fast switching with 8.9 nC total gate charge and supports unclamped inductive switching with 300 mJ single-pulse avalanche energy - used in high-voltage DC-DC converters and industrial motor control.
For engineers reviewing the IRFR9210TRR datasheet, IRFR9210TRR pinout, IRFR9210TRR application, or IRFR9210TRR equivalent, this page provides verified electrical parameters, thermal derating data, body diode recovery characteristics, and validated alternatives for high-side switching designs requiring ruggedness and surface-mount compatibility.
Technical Context
The IRFR9210TRR employs planar vertical DMOS technology optimized for high-voltage P-channel operation, featuring dynamic dV/dt rating up to -5.0 V/ns and repetitive avalanche capability at -1.9 A. Its gate threshold voltage range of -2.0 V to -4.0 V ensures reliable turn-on with standard logic-level gate drivers.
Thermal design is enabled by a low 5.0 °C/W junction-to-case (drain) resistance and 50 °C/W junction-to-ambient rating on 1" FR-4 PCB. The integrated body diode exhibits 110–220 ns reverse recovery time and -5.8 V forward drop at -1.9 A, supporting synchronous rectification and freewheeling in flyback and half-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -200 V - supports high-side switching in 100–170 V DC bus systems without external clamping |
| RDS(on) | 3.0 Ω @ VGS = -10 V - enables <1.1 W conduction loss at -1.9 A, suitable for low-duty-cycle HV loads |
| Qg | 8.9 nC - determines gate drive power requirement; compatible with 1–2 A peak gate drivers |
| ID (cont.) | -1.9 A @ TC = 25 °C - defines maximum steady-state current with heatsink; derates linearly to -1.2 A at 100 °C case |
| EAS | 300 mJ - allows safe operation under unclamped inductive switching events in relay/snubberless designs |
| trr / Qrr | 110–220 ns / 0.56–1.1 μC - sets minimum dead-time requirements in synchronous topologies |
| RthJC | 5.0 °C/W - enables direct thermal coupling to PCB copper pour or external heatsink for >2 W dissipation |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-current, high-voltage PCB layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connects to system ground or floating rail in high-side configuration |
| Pin 2 (Gate) | Control input (G) | High-impedance MOSFET gate; requires negative bias relative to source to turn on |
| Pin 3 (Drain) | Power output (D) | Exposed metal pad - electrically and thermally connected to drain; must be routed to high-voltage net and thermal plane |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Rated for -1.9 A repetitive avalanche current - eliminates need for external snubbers in inductive load switching |
| Dynamic dV/dt immunity | -5.0 V/ns - prevents false turn-on during fast voltage transients in high-noise industrial environments |
| Surface-mount (DPAK) | TO-252 footprint - supports automated assembly and high-density PCB layouts with thermal pad soldering |
| Fast switching | 8.0 ns turn-on delay + 12 ns rise time - reduces switching losses in 50–200 kHz SMPS applications |
| P-channel topology | Enables high-side switch configuration without level-shifting gate drivers - simplifies isolated power supply control |
Applications
| Industrial Motor Control | High-Voltage DC-DC Converters |
|---|---|
Use Scenario: Driving solenoids and small brushed DC motors in programmable logic controller (PLC) output modules operating from 24–120 V DC rails. IC Role / Device Role / Timing Role: High-side P-channel switch controlling motor direction and braking via PWM duty cycle. Use Value: Avalanche rating absorbs back-EMF spikes during motor commutation; low RDS(on) minimizes heat buildup in compact enclosures. | Use Scenario: Primary-side high-side switch in isolated flyback converters delivering 5–24 V outputs from 100–170 V DC inputs. IC Role / Device Role / Timing Role: Main power switch turning on/off transformer primary winding; operates at 65–130 kHz. Use Value: -200 V VDS margin accommodates reflected voltage spikes; fast trr enables efficient synchronous rectification on secondary side. |
| Relay Replacement Circuits | Overvoltage Protection Switches |
Use Scenario: Solid-state replacement for electromechanical relays in HVAC control panels handling 48–96 V DC loads. IC Role / Device Role / Timing Role: Low-duty-cycle, high-voltage switching element activated by microcontroller GPIO. Use Value: 300 mJ EAS withstands inductive kickback from contactor coils; surface-mount package enables smaller board area than through-hole relays. | Use Scenario: Input-stage protection switch disconnecting downstream circuitry during overvoltage events on 48 V telecom or PoE++ power distribution lines. IC Role / Device Role / Timing Role: Normally-on or normally-off high-side disconnect switch controlled by voltage monitor IC. Use Value: -200 V rating exceeds 48 V system transient limits (IEC 61000-4-5); robust gate oxide withstands repeated surge exposure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFU9210PbF | Same die, IPAK (TO-251) through-hole package; higher RthJA (110 °C/W vs. 50 °C/W on PCB) | Suitable for prototyping or low-volume through-hole assembly; not recommended for high-power density designs | Select when manual soldering or legacy board compatibility is required; avoid for >1 W continuous dissipation |
| SiHFR9210TR-GE3 | Same specifications and DPAK package; RoHS-compliant, halogen-free construction; identical pinout and thermal performance | Drop-in replacement for lead-free manufacturing; no layout or thermal redesign needed | Preferred for new designs targeting IPC-J-STD-020 compliance and extended product lifecycle |
Compared with IRFR9210TRR, IRFU9210PbF trades surface-mount efficiency for through-hole flexibility, while SiHFR9210TR-GE3 offers identical electrical and thermal behavior with enhanced environmental compliance - making it the optimal upgrade path for production releases.
Availability
IRFR9210TRR is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC conversion, relay replacement, and overvoltage protection circuits requiring stable component supply and long-term manufacturability.
Supply support for IRFR9210TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.
The IRFR9210TRR belongs to Vishay's high-voltage P-channel Power MOSFET family, engineered for ruggedness in unclamped inductive switching and designed specifically for high-side switching in space-constrained, high-reliability power systems.
FAQ
What is the maximum continuous drain current rating for IRFR9210TRR at 100 °C case temperature?
The IRFR9210TRR has a maximum continuous drain current of -1.2 A at TC = 100 °C, per its Absolute Maximum Ratings table. This reflects linear derating from -1.9 A at 25 °C using a factor of 0.20 W/°C. Designers must verify thermal interface and PCB copper area to maintain case temperature within this limit during sustained operation of IRFR9210TRR.
Does IRFR9210TRR support logic-level gate drive?
No, IRFR9210TRR is not a logic-level MOSFET. Its gate threshold voltage ranges from -2.0 V to -4.0 V, and full enhancement requires VGS ≤ -10 V to achieve RDS(on) = 3.0 Ω. Driving IRFR9210TRR from 3.3 V or 5 V microcontrollers requires a dedicated negative gate driver or level-shifting circuit to ensure reliable turn-on and minimize conduction losses.
What is the thermal resistance from junction to ambient for IRFR9210TRR mounted on a standard PCB?
When mounted on a 1" square FR-4 PCB, the IRFR9210TRR exhibits a maximum junction-to-ambient thermal resistance (RthJA) of 50 °C/W. This value assumes proper soldering of the exposed drain pad to a thermal copper pour. Without such thermal relief, RthJA degrades to 110 °C/W - so correct PCB layout is essential to sustain power dissipation in IRFR9210TRR applications.
Can IRFR9210TRR be used in avalanche mode repeatedly?
Yes, IRFR9210TRR is explicitly rated for repetitive avalanche operation at -1.9 A, with a maximum repetitive avalanche energy (EAR) of 2.5 mJ per pulse. This capability is validated per test condition b in the datasheet (VDD = -50 V, L = 124 mH, Rg = 25 Ω). Designers must ensure pulse width and duty cycle remain within limits defined by junction temperature constraints to maintain reliability of IRFR9210TRR in such modes.
What is the body diode forward voltage of IRFR9210TRR at -1.9 A and 25 °C?
The body diode forward voltage (VSD) of IRFR9210TRR is -5.8 V at IS = -1.9 A and TJ = 25 °C with VGS = 0 V. This relatively high forward drop reflects the high-voltage P-channel structure and must be accounted for in freewheeling paths - especially in synchronous rectifier designs where it impacts efficiency more significantly than in N-channel counterparts.
IRFR9210TRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.9 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 170 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR9210TRR FAQ
1.How can I place an order for IRFR9210TRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9210TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9210TRR reliable?
The price and inventory of IRFR9210TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9210TRR is usually 5 days.
3.What payment methods are accepted for IRFR9210TRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9210TRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9210TRR?
IRFR9210TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9210TRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9210TRR?
For technical support, including IRFR9210TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9210TRR requirements.
6.How does Aetrix verify that IRFR9210TRR is sourced from the original manufacturer or authorized distributors?
All IRFR9210TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9210TRR meets industry standards.
7.What is the process for return or replacement of IRFR9210TRR?
All IRFR9210TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9210TRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9210TRR part is unused and in its original packaging.
Return procedure for IRFR9210TRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFR9210TRR Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
