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Vishay Siliconix IRFR9214
- Part No.:
- IRFR9214
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9214.pdf
- Description:
- MOSFET P-CH 250V 2.7A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,388
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Product details
Overview
IRFR9214 from Vishay Siliconix is a surface-mount P-channel enhancement-mode power MOSFET in DPAK (TO-252) package, rated for -250 V drain-source voltage, 3.0 Ω RDS(on) at VGS = -10 V, and -2.7 A continuous drain current at TC = 25 °C. It delivers fast switching, fully avalanche-rated ruggedness, and integrated body diode performance for high-voltage DC-DC conversion and industrial power control.
For engineers reviewing the IRFR9214 datasheet, IRFR9214 pinout, IRFR9214 application, or IRFR9214 equivalent, key selection criteria include its -250 V blocking capability, 14 nC total gate charge, 100 mJ single-pulse avalanche energy, thermal resistance of 2.5 °C/W junction-to-case, and compatibility with vapor-phase and wave soldering processes.
Technical Context
This P-channel MOSFET uses third-generation silicon process technology to achieve low on-resistance per die area while maintaining robust avalanche performance. Its gate threshold voltage range (-2.0 V to -4.0 V) ensures reliable turn-on with standard -10 V gate drive and supports logic-level compatibility when paired with appropriate level-shifting circuitry.
The device integrates a fast-recovery body diode with 150–220 ns reverse recovery time and 870–1300 nC Qrr, enabling efficient synchronous rectification and unclamped inductive switching. Its SOA is limited by RDS(on) at low VDS and by thermal constraints at high VDS, with pulse width and duty cycle restrictions defined per Figure 7.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -250 V - Maximum blocking voltage for high-side switch or reverse polarity protection in 200 V-class systems |
| RDS(on) | 3.0 Ω @ VGS = -10 V - On-state resistance defining conduction loss at rated current; increases with temperature |
| ID (cont.) | -2.7 A @ TC = 25 °C - Continuous current capability under heatsink-cooled conditions; derates linearly above 25 °C |
| Qg | 14 nC - Total gate charge determining drive strength requirement and switching loss in hard-switched topologies |
| EAS | 100 mJ - Single-pulse avalanche energy rating confirming ruggedness during inductive turn-off transients |
| RthJC | 2.5 °C/W - Junction-to-case thermal resistance enabling thermal design with external heatsink attachment |
| VGS(th) | -2.0 to -4.0 V - Gate threshold range ensuring predictable turn-on behavior across temperature and process variation |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad on bottom side for thermal conduction and mechanical anchoring. Standard footprint per Vishay Application Note 826: 6.18 mm × 10.67 mm pad layout with 2.28 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connects to load return or system ground in high-side configurations |
| Pin 2 (Gate) | Control input (G) | High-impedance input requiring < ±100 nA leakage current; drives internal capacitances Ciss, Coss, Crss |
| Pin 3 (Drain) | Power output (D) | Exposed metal pad on underside; primary current path and thermal interface to PCB copper or heatsink |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 100 mJ single-pulse EAS and 5.0 mJ repetitive EAR enable reliable operation under unclamped inductive switching without external snubbers |
| P-channel topology | Enables high-side switching without bootstrap circuitry; simplifies gate drive in buck regulators and reverse polarity protection |
| Low Qg/Qgd ratio | 14 nC Qg with 6.8 nC Qgd yields favorable Miller effect control for stable hard-switching up to ~100 kHz |
| Fast body diode | 150–220 ns trr and low VSD = -5.8 V support efficient freewheeling in flyback and forward converters |
| Surface-mount DPAK | TO-252 outline enables automated assembly and direct thermal coupling to PCB copper; compatible with IPC-7351B footprint |
Applications
| Industrial Motor Control | High-Voltage DC-DC Converters |
|---|---|
Use Scenario: High-side switch in 100–200 V DC bus protection circuits for servo drives and PLC I/O modules. IC Role / Device Role / Timing Role: P-channel MOSFET configured as reverse polarity and overvoltage clamp; operates in static on/off mode with infrequent switching. Use Value: -250 V VDS rating provides 25 % margin above 200 V rail; fully avalanche-rated behavior prevents failure during bus fault transients. |
Use Scenario: Synchronous rectifier in isolated flyback converter delivering 12 V/2 A from 170–200 V DC input. IC Role / Device Role / Timing Role: Secondary-side P-channel switch replacing Schottky diode; driven by transformer-coupled gate signal with dead-time control. Use Value: 3.0 Ω RDS(on) reduces conduction loss vs. 0.5 V diode drop; fast trr minimizes switching loss during zero-voltage turn-on. |
| Reverse Polarity Protection | AC-DC Front-End Switching |
Use Scenario: Input protection for 48 V telecom power supplies where accidental battery reversal must be blocked without voltage drop. IC Role / Device Role / Timing Role: Low-side P-channel switch placed between input and bulk capacitor; turned on only during correct polarity condition. Use Value: -2.7 A ID supports 2 A continuous load; -5.8 V VSD limits forward drop during startup inrush, reducing thermal stress. |
Use Scenario: High-voltage switching element in active clamp forward converter operating from rectified 230 V AC input. IC Role / Device Role / Timing Role: Main switch in high-side configuration; subjected to repetitive 100–200 V VDS transitions at 50–100 kHz. Use Value: 14 nC Qg enables efficient drive with low-power gate driver ICs; 2.5 °C/W RthJC allows heatsink-free operation at ≤1 W dissipation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiHFR9214-GE3 | Same silicon die and DPAK package; Pb-free/halogen-free construction per JEDEC J-STD-609A Class 2a | No functional difference; suitable for RoHS-compliant production with identical thermal and electrical behavior | Select SiHFR9214-GE3 for new designs requiring full environmental compliance without qualification retesting |
| IRFU9214PbF | Identical electrical specs but IPAK (TO-251) through-hole package; no exposed drain pad; higher RthJA (110 °C/W) | Requires manual or wave-solder assembly; less effective thermal management; unsuitable for high-power density layouts | Choose IRFU9214PbF only when legacy through-hole manufacturing or board-level repairability is mandatory |
Compared with IRFR9214, SiHFR9214-GE3 offers identical performance with enhanced environmental compliance, while IRFU9214PbF trades surface-mount efficiency and thermal performance for through-hole assembly flexibility-neither is pin-compatible due to differing package outlines and thermal pad geometry.
Availability
IRFR9214 is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC converters, reverse polarity protection, and AC-DC front-end switching requiring stable component supply and long-term manufacturability.
Supply support for IRFR9214 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with vertical manufacturing and rigorous reliability testing.
The IRFR9214 belongs to Vishay's third-generation high-voltage P-channel MOSFET product line, engineered for ruggedness in industrial power conversion, motor drives, and protection circuits where avalanche capability and thermal stability are critical.
FAQ
What is the maximum continuous drain current rating for IRFR9214 at 100 °C case temperature?
The IRFR9214 supports -1.7 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package and requires adequate PCB copper area or heatsinking to maintain junction temperature below 150 °C under sustained load.
Does IRFR9214 have a built-in body diode, and what are its key parameters?
Yes, the IRFR9214 integrates a source-drain body diode with -5.8 V forward voltage at -2.7 A and 25 °C, 150–220 ns reverse recovery time, and 870–1300 nC reverse recovery charge. These values are measured under standardized conditions (TJ = 25 °C, IF = -1.7 A, dI/dt = 100 A/μs) and define freewheeling performance in converter topologies.
Can IRFR9214 be used in logic-level gate drive applications?
The IRFR9214 has a gate threshold voltage range of -2.0 V to -4.0 V, making it partially compatible with logic-level drive, but full enhancement requires VGS ≤ -10 V for guaranteed RDS(on) ≤ 3.0 Ω. For true logic-level operation, a dedicated -4.5 V or -3.3 V rated P-channel MOSFET should be selected instead.
What is the recommended PCB pad layout for IRFR9214 in DPAK (TO-252) package?
Vishay Application Note 826 specifies a minimum pad layout for IRFR9214: 6.18 mm × 10.67 mm copper area for the drain pad, with 2.28 mm spacing between source and gate pads. Thermal vias under the drain pad are strongly recommended to enhance heat transfer to inner layers or backside copper.
Is IRFR9214 suitable for avalanche energy handling in unclamped inductive switching?
Yes, the IRFR9214 is fully avalanche rated with 100 mJ single-pulse avalanche energy (EAS) and 5.0 mJ repetitive avalanche energy (EAR). These ratings are validated per test conditions in Figure 12 and allow safe operation during inductive turn-off events without external clamping components.
IRFR9214 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 1.7A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 220 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR9214 FAQ
1.How can I place an order for IRFR9214 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9214 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9214 reliable?
The price and inventory of IRFR9214 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9214 is usually 5 days.
3.What payment methods are accepted for IRFR9214?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9214 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9214?
IRFR9214 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9214 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9214?
For technical support, including IRFR9214 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9214 requirements.
6.How does Aetrix verify that IRFR9214 is sourced from the original manufacturer or authorized distributors?
All IRFR9214 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9214 meets industry standards.
7.What is the process for return or replacement of IRFR9214?
All IRFR9214 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9214, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9214 part is unused and in its original packaging.
Return procedure for IRFR9214:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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