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Vishay Siliconix IRFR9214TRR
- Part No.:
- IRFR9214TRR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9214TRR.pdf
- Description:
- MOSFET P-CH 250V 2.7A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,285
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Product details
Overview
IRFR9214TRR from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -250 V drain-source voltage, 3.0 Ω RDS(on) at VGS = -10 V, and -2.7 A continuous drain current at TC = 25 °C. It delivers fast switching performance with 14 nC total gate charge and is fully avalanche rated for robustness in inductive load circuits such as DC-DC converters and motor control.
For engineers reviewing the IRFR9214TRR datasheet, IRFR9214TRR pinout, IRFR9214TRR application, or IRFR9214TRR equivalent, key selection considerations include its -250 V blocking capability, DPAK thermal performance (RthJC = 2.5 °C/W), body diode recovery time (150–220 ns), and compatibility with -10 V gate drive in high-side switch configurations.
Technical Context
This device belongs to Vishay's third-generation high-voltage P-channel MOSFET family, fabricated using advanced silicon processing to minimize on-resistance per die area while maintaining rugged avalanche capability. Its design targets high-reliability, medium-power switching where reverse-polarity protection, load switching, or high-side configuration is required.
The IRFR9214TRR operates with a gate-threshold voltage range of -2.0 V to -4.0 V and exhibits low dynamic losses via 3.1 nC gate-source charge and 6.8 nC gate-drain charge. Its integral body diode supports unclamped inductive switching with 100 mJ single-pulse avalanche energy rating and controlled dV/dt immunity (-5.0 V/ns).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -250 V - Supports high-voltage DC bus isolation and reverse-polarity protection up to industrial 240 VAC-derived rails. |
| RDS(on) | 3.0 Ω @ VGS = -10 V - Enables <1.5 W conduction loss at -1.7 A, suitable for thermally constrained SMT layouts. |
| ID (cont.) | -2.7 A @ TC = 25 °C - Delivers stable current handling in PCB-mounted heatsink applications without forced air. |
| Qg | 14 nC - Determines gate driver power requirement; compatible with standard logic-level drivers at ≤100 kHz switching. |
| EAS | 100 mJ - Ensures reliable operation under unclamped inductive turn-off events in relay/motor drive circuits. |
| VGS(th) | -2.0 to -4.0 V - Allows partial enhancement with -5 V logic-level drive but requires -10 V for full RDS(on) specification. |
| trr | 150–220 ns - Defines minimum dead-time requirements when used in synchronous rectification or half-bridge topologies. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction; standardized 3-pin layout optimized for vapor-phase and wave soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connects to system ground or negative rail in high-side switch configurations. |
| Pin 2 (Gate) | Control input (G) | Receives negative gate voltage relative to source to turn on; requires external pull-down for default-off behavior. |
| Pin 3 (Drain) | Power output (D) | High-voltage switched node; electrically and thermally connected to exposed copper pad on bottom of package. |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 100 mJ single-pulse EAS enables robust operation in inductive switching without external snubbers. |
| P-channel enhancement mode | Eliminates need for high-side gate driver ICs in simple load-switch applications with common-ground control. |
| DPAK surface-mount package | Enables automated assembly and achieves 2.5 °C/W junction-to-case thermal resistance for compact thermal design. |
| Fast switching with low Qgd | 6.8 nC gate-drain charge minimizes Miller plateau duration, reducing switching transition losses at 50–100 kHz. |
| Low IDSS leakage | <100 μA at VDS = -250 V ensures minimal standby power loss in always-on reverse-polarity protection circuits. |
Applications
| Reverse Polarity Protection | High-Side Load Switch |
|---|---|
Use Scenario: Preventing damage from incorrect battery or power supply connection in portable medical devices and industrial sensors. IC Role / Device Role / Timing Role: P-channel MOSFET configured as series pass element between input and system rail; conducts only when VIN polarity is correct. Use Value: Achieves <0.5 V forward drop at 2 A using -10 V gate bias, eliminating Schottky diode power loss and heat generation. |
Use Scenario: Enabling/disabling 24 V DC loads (e.g., solenoids, LED arrays) from a microcontroller with ground-referenced GPIO. IC Role / Device Role / Timing Role: High-side switch controlled by inverted logic signal; gate driven negative relative to source to turn on. Use Value: Eliminates need for level-shifting or dedicated high-side driver ICs, simplifying BOM and layout in space-constrained modules. |
| DC-DC Converter Sync Rectifier | Motor Drive Brake Circuit |
Use Scenario: Replacing freewheeling diodes in non-isolated buck converters for telecom power supplies operating at 48 V input. IC Role / Device Role / Timing Role: Synchronous rectifier in low-side position; body diode conducts during dead time, channel conducts during active period. Use Value: Reduces conduction loss by >60% vs. Schottky diode, improving efficiency from 89% to 93% at 5 A output. |
Use Scenario: Providing dynamic braking in brushed DC motors used in warehouse automation conveyors. IC Role / Device Role / Timing Role: Connected across motor terminals to short windings during deceleration; activated after main H-bridge turn-off. Use Value: Dissipates stored inductive energy safely within rated 100 mJ avalanche limit, preventing voltage spikes >300 V. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR9120TRPBF | -200 V VDS, 1.4 Ω RDS(on), 4.8 A ID - lower voltage rating but lower on-resistance and higher current. | Better suited for 12–48 V systems requiring lower conduction loss; insufficient for 200+ V DC bus protection. | Select when system max VDS ≤ 200 V and thermal headroom allows higher current density. |
| SiHFR9214-GE3 | Identical electrical specs and DPAK package; Vishay's lead-free/halogen-free variant with same RDS(on), Qg, and avalanche rating. | No functional difference; meets RoHS/REACH compliance requirements where IRFR9214TRR does not. | Choose for new designs requiring full environmental compliance without circuit or layout changes. |
Compared with IRFR9214TRR, IRFR9120TRPBF trades off voltage capability for improved conduction efficiency in lower-voltage systems, while SiHFR9214-GE3 provides identical performance with enhanced material compliance-making it a direct replacement where regulatory certification is mandatory.
Availability
IRFR9214TRR is available at Aetrix Electronics and suitable for reverse polarity protection, high-side load switching, and DC-DC converter synchronous rectification requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRFR9214TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.
The IRFR9214TRR belongs to Vishay's high-voltage P-channel power MOSFET product line, engineered for robustness in industrial power management, automotive subsystems, and telecom infrastructure where overvoltage resilience and avalanche tolerance are critical.
FAQ
What is the maximum junction temperature for IRFR9214TRR?
The IRFR9214TRR has an operating junction temperature range of -55 °C to +150 °C. Its absolute maximum rating is 150 °C, and thermal derating begins above 25 °C case temperature at 0.40 W/°C. The device must be mounted on a PCB with adequate copper area or heatsinking to maintain TJ ≤ 150 °C under full load conditions.
Is IRFR9214TRR suitable for logic-level gate drive?
The IRFR9214TRR is not a logic-level MOSFET: its gate-threshold voltage ranges from -2.0 V to -4.0 V, and its specified RDS(on) of 3.0 Ω is guaranteed only at VGS = -10 V. Driving it with -5 V may yield significantly higher on-resistance and increased conduction loss; use -10 V gate drive for full performance in IRFR9214TRR applications.
Does IRFR9214TRR have an integrated body diode, and what are its characteristics?
Yes, IRFR9214TRR includes an integral body diode with VSD = -5.8 V at IS = -2.7 A and TJ = 25 °C. Its reverse recovery time is 150–220 ns, and reverse recovery charge is 870–1300 nC. These values require careful dead-time management in synchronous rectifier or bridge configurations to avoid cross-conduction.
What is the thermal resistance from junction to ambient for IRFR9214TRR in typical PCB mounting?
In standard FR-4 PCB mounting (1" square copper area), the IRFR9214TRR exhibits a maximum junction-to-ambient thermal resistance (RthJA) of 50 °C/W. With no heatsink, this limits continuous power dissipation to ~1 W at 25 °C ambient. For higher power, use the exposed drain pad with thermal vias to internal ground planes to approach the 2.5 °C/W junction-to-case rating.
Can IRFR9214TRR replace IRFU9214 in existing designs?
No - IRFR9214TRR uses a DPAK (TO-252) surface-mount package, while IRFU9214 uses an IPAK (TO-251) through-hole package with different pin spacing and mounting method. Though electrically identical, the mechanical incompatibility prevents direct substitution without PCB redesign. Use SiHFU9214-GE3 only if through-hole assembly is required.
IRFR9214TRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 1.7A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 220 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR9214TRR FAQ
1.How can I place an order for IRFR9214TRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9214TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9214TRR reliable?
The price and inventory of IRFR9214TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9214TRR is usually 5 days.
3.What payment methods are accepted for IRFR9214TRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9214TRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9214TRR?
IRFR9214TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9214TRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9214TRR?
For technical support, including IRFR9214TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9214TRR requirements.
6.How does Aetrix verify that IRFR9214TRR is sourced from the original manufacturer or authorized distributors?
All IRFR9214TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9214TRR meets industry standards.
7.What is the process for return or replacement of IRFR9214TRR?
All IRFR9214TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9214TRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9214TRR part is unused and in its original packaging.
Return procedure for IRFR9214TRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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