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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR9220PBF-BE3

Name: IRFR9220PBF-BE3
Brand: Vishay Siliconix
SKU: IRFR9220PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR9220PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9220PBF-BE3.pdf

Description:: P-CHANNEL 200V

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Product details

Overview

IRFR9220PBF-BE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) package, rated for -200 V drain-source voltage, 1.5 Ω R_DS(on) at V_GS = -10 V, and -3.6 A continuous drain current at T_C = 25 °C. It supports fast switching, repetitive avalanche operation, and surface-mount assembly for high-voltage DC-DC converters and motor control circuits.

For engineers reviewing the IRFR9220PBF-BE3 datasheet, IRFR9220PBF-BE3 pinout, IRFR9220PBF-BE3 application, or IRFR9220PBF-BE3 equivalent, key selection criteria include its -200 V blocking capability, 1.5 Ω on-resistance, 20 nC total gate charge, ruggedness under unclamped inductive switching, and compatibility with standard DPAK PCB footprints and reflow profiles.

Technical Context

This device uses Vishay's third-generation Power MOSFET technology to achieve low R_DS(on) while maintaining high transconductance and extreme ruggedness. Its design includes dynamic dV/dt rating (-5.0 V/ns), repetitive avalanche energy rating (4.2 mJ), and integrated body diode with 150–300 ns reverse recovery time.

The IRFR9220PBF-BE3 operates as a high-side switch in buck regulators and H-bridge motor drivers, leveraging its P-channel topology to simplify gate drive requirements in high-side configurations. Thermal performance is defined by R_thJC = 3.0 °C/W and R_thJA = 50 °C/W (PCB mount), enabling stable operation up to +150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-200 V - Supports high-voltage DC bus isolation in industrial power supplies and motor drives.
R_DS(on)	1.5 Ω @ V_GS = -10 V - Enables low conduction loss at -3.6 A continuous current in compact thermal designs.
Q_g	20 nC - Determines gate drive power requirement and switching speed in PWM applications.
I_D (cont.)	-3.6 A @ T_C = 25 °C - Specifies maximum steady-state current with heatsink or PCB copper area.
E_AS	310 mJ - Quantifies single-pulse avalanche energy handling without failure during inductive turn-off.
V_GS(th)	-2.0 to -4.0 V - Defines gate voltage range for reliable turn-on; compatible with standard logic-level drivers.
R_thJC	3.0 °C/W - Enables direct thermal path from die to heatsink or copper pour for high-power dissipation.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. Standard footprint per Vishay Application Note 826: 6.18 mm × 10.67 mm pad layout with 2.29 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of P-channel MOSFET	Reference node for gate drive; connects to positive rail in high-side switch configuration.
Pin 2 (Gate)	Control electrode	Accepts negative gate voltage relative to source to turn on; requires < -2.0 V threshold.
Pin 3 (Drain)	High-voltage output terminal	Connected to load or DC bus; electrically and thermally tied to exposed backside metal pad.

Key Features

Feature	Design Value
Repetitive avalanche rated	Withstands repeated inductive switching events up to I_AR = -3.6 A and E_AR = 4.2 mJ without degradation.
Dynamic dV/dt rating	Rated for -5.0 V/ns to prevent false turn-on during high-speed voltage transients in noisy environments.
Surface-mount (DPAK)	Compatible with vapor-phase, infrared, and wave soldering; optimized for automated assembly and thermal management.
Fast switching	Turn-on delay 8.8 ns, rise time 27 ns, turn-off delay 7.3 ns, fall time 19 ns at V_DD = -100 V.
Low gate charge	Q_g = 20 nC and Q_gd = 11 nC reduce driver losses and improve efficiency in high-frequency SMPS.

Applications

Industrial Motor Control	High-Voltage DC-DC Converters
Use Scenario: Controlling brushed DC motors in factory automation systems with 100–200 V DC bus. IC Role / Device Role / Timing Role: High-side P-channel switch in half-bridge configuration, operating at ≤100 kHz PWM frequency. Use Value: -200 V V_DS rating ensures margin against voltage spikes; 1.5 Ω R_DS(on) limits conduction loss to <20 W at full load.	Use Scenario: Synchronous rectification or primary-side switch in isolated flyback or forward converters. IC Role / Device Role / Timing Role: Main switching element in high-side topology with gate driven by transformer-coupled or bootstrap circuit. Use Value: Repetitive avalanche capability handles leakage inductance energy; 3.0 °C/W R_thJC enables direct heatsink mounting for >40 W dissipation.
Power Supply OR-ing	LED Driver Circuits
Use Scenario: Reverse polarity protection and redundant power path selection in telecom power shelves. IC Role / Device Role / Timing Role: Low-loss series pass element replacing Schottky diodes in hot-swap and OR-ing applications. Use Value: Body diode V_SD = -6.3 V at -3.6 A enables low forward drop when used bidirectionally; -200 V rating prevents breakdown during input reversal.	Use Scenario: Constant-current dimming control for high-brightness LED strings in street lighting. IC Role / Device Role / Timing Role: Linear or PWM-controlled current sink in high-side configuration for isolated LED drivers. Use Value: Gate threshold (-2.0 to -4.0 V) allows direct interface with microcontroller GPIO; ruggedness supports surge immunity per IEC 61000-4-5.

Industrial Motor Control

High-Voltage DC-DC Converters

Use Scenario: Controlling brushed DC motors in factory automation systems with 100–200 V DC bus.

IC Role / Device Role / Timing Role: High-side P-channel switch in half-bridge configuration, operating at ≤100 kHz PWM frequency.

Use Value: -200 V V_DS rating ensures margin against voltage spikes; 1.5 Ω R_DS(on) limits conduction loss to <20 W at full load.

Use Scenario: Synchronous rectification or primary-side switch in isolated flyback or forward converters.

IC Role / Device Role / Timing Role: Main switching element in high-side topology with gate driven by transformer-coupled or bootstrap circuit.

Use Value: Repetitive avalanche capability handles leakage inductance energy; 3.0 °C/W R_thJC enables direct heatsink mounting for >40 W dissipation.

Power Supply OR-ing

LED Driver Circuits

Use Scenario: Reverse polarity protection and redundant power path selection in telecom power shelves.

IC Role / Device Role / Timing Role: Low-loss series pass element replacing Schottky diodes in hot-swap and OR-ing applications.

Use Value: Body diode V_SD = -6.3 V at -3.6 A enables low forward drop when used bidirectionally; -200 V rating prevents breakdown during input reversal.

Use Scenario: Constant-current dimming control for high-brightness LED strings in street lighting.

IC Role / Device Role / Timing Role: Linear or PWM-controlled current sink in high-side configuration for isolated LED drivers.

Use Value: Gate threshold (-2.0 to -4.0 V) allows direct interface with microcontroller GPIO; ruggedness supports surge immunity per IEC 61000-4-5.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR9120PBF-BE3	-100 V V_DS, 0.60 Ω R_DS(on), lower voltage rating and lower on-resistance	Suitable only for ≤100 V systems; not interchangeable in -200 V designs	Select only if system bus voltage is ≤100 V and lower conduction loss is prioritized.
SiHFR9220-GE3	Identical V_DS, R_DS(on), Q_g, and package; Vishay's newer halogen-free variant with same electrical specs	No functional difference; differs only in material compliance (halogen-free vs. Pb-free)	Drop-in replacement where RoHS/REACH compliance beyond Pb-free is required.

Compared with IRFR9220PBF-BE3, IRFR9120PBF-BE3 offers lower on-resistance but insufficient voltage margin for 200 V applications, while SiHFR9220-GE3 provides identical electrical performance with updated environmental compliance-making it the preferred alternative for new designs requiring halogen-free materials.

Availability

IRFR9220PBF-BE3 is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC conversion, and LED driver applications requiring stable component supply across extended production lifecycles.

Supply support for IRFR9220PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and high-voltage performance.

The IRFR9220PBF-BE3 belongs to Vishay's high-voltage P-channel Power MOSFET family, engineered for robust operation in demanding industrial and automotive power systems where avalanche capability, thermal stability, and surface-mount compatibility are critical.

FAQ

What is the maximum continuous drain current rating for IRFR9220PBF-BE3 at 100 °C case temperature?

The IRFR9220PBF-BE3 has a continuous drain current rating of -2.3 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package and must be applied when ambient or heatsink conditions elevate case temperature above 25 °C. Designers should verify actual junction temperature using R_thJC = 3.0 °C/W and power dissipation calculations to ensure safe operation within the -55 to +150 °C junction temperature range.

Does IRFR9220PBF-BE3 support avalanche operation, and what are the limits?

Yes, IRFR9220PBF-BE3 is repetitively avalanche rated with I_AR = -3.6 A and E_AR = 4.2 mJ per pulse, and single-pulse avalanche energy E_AS = 310 mJ. These ratings assume pulse width limited by maximum junction temperature and test conditions per Figure 12: V_DD = -50 V, L = 35 mH, R_g = 25 Ω. The device is designed to withstand such events without parameter shift or failure when operated within datasheet-defined boundaries.

What is the gate-source threshold voltage range for IRFR9220PBF-BE3, and how does it affect drive requirements?

The gate-source threshold voltage V_GS(th) for IRFR9220PBF-BE3 is -2.0 V to -4.0 V at I_D = -250 μA. This range indicates the minimum negative gate voltage needed to initiate conduction. To ensure full enhancement and low R_DS(on), a V_GS of -10 V is recommended. Logic-level drivers capable of sinking ≥10 V are required for reliable turn-on; 3.3 V or 5 V microcontroller outputs alone cannot directly drive IRFR9220PBF-BE3 without level-shifting circuitry.

Can IRFR9220PBF-BE3 be used in through-hole applications?

No, IRFR9220PBF-BE3 is specifically packaged in DPAK (TO-252), a surface-mount outline. Through-hole variants of the same silicon die are designated as IRFU9220PbF (IPAK/TO-251). Attempting to mount IRFR9220PBF-BE3 in through-hole sockets or holes will compromise mechanical integrity, thermal performance, and solder joint reliability. Use IRFU9220PbF or SiHFU9220-GE3 for through-hole designs.

What is the typical reverse recovery time of the body diode in IRFR9220PBF-BE3?

The body diode reverse recovery time t_rr for IRFR9220PBF-BE3 is 150–300 ns at T_J = 25 °C, I_F = -3.9 A, and dI/dt = 100 A/μs. This value is critical for synchronous rectification and freewheeling applications, where shorter t_rr reduces switching losses and voltage overshoot. The associated reverse recovery charge Q_rr is 0.97–2.0 μC, confirming moderate softness suitable for medium-frequency (<500 kHz) operation.

IRFR9220PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 340 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

IRFR9220PBF-BE3 FAQ

1.How can I place an order for IRFR9220PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9220PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9220PBF-BE3 reliable?

The price and inventory of IRFR9220PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9220PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFR9220PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9220PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9220PBF-BE3?

IRFR9220PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9220PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9220PBF-BE3?

For technical support, including IRFR9220PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9220PBF-BE3 requirements.

6.How does Aetrix verify that IRFR9220PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFR9220PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9220PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFR9220PBF-BE3?

All IRFR9220PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9220PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9220PBF-BE3 part is unused and in its original packaging.

Return procedure for IRFR9220PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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