Vishay Siliconix IRFR9220TR
- Part No.:
- IRFR9220TR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9220TR.pdf
- Description:
- MOSFET P-CH 200V 3.6A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:8,250
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Product details
Overview
IRFR9220TR from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -200 V drain-source voltage, 1.5 Ω RDS(on) at VGS = -10 V, and -3.6 A continuous drain current at TC = 25 °C. It delivers fast switching with 20 nC total gate charge and supports repetitive avalanche operation up to 4.2 mJ, making it suitable for high-voltage DC-DC converters and industrial motor control.
For engineers reviewing the IRFR9220TR datasheet, IRFR9220TR pinout, IRFR9220TR application, or IRFR9220TR equivalent, this page provides verified technical context, validated pin configuration, real-world use cases in high-side switching and polarity-reversal circuits, and confirmed alternative parts with documented functional and packaging differences.
Technical Context
This device uses Vishay's third-generation Power MOSFET technology to achieve low on-resistance while maintaining ruggedness against unclamped inductive switching. Its P-channel architecture enables high-side switch configurations without level-shifting circuitry, and its -200 V VDS rating supports operation in 100–150 V bus systems with margin.
The IRFR9220TR features dynamic dV/dt immunity (-5.0 V/ns), integrated body diode with 150–300 ns reverse recovery time, and thermal resistance of 3.0 °C/W junction-to-case - enabling stable operation under pulsed loads when mounted on heatsinked PCBs or metal-core substrates.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -200 V - supports 150 V nominal bus applications with 33 % voltage margin for transients |
| RDS(on) | 1.5 Ω @ VGS = -10 V - limits conduction loss to ≤ 19.4 W at -3.6 A, enabling compact thermal design |
| Qg | 20 nC - determines gate drive power requirement; compatible with standard logic-level drivers |
| ID (cont.) | -3.6 A @ TC = 25 °C - defines maximum steady-state current in heatsinked DPAK mounting |
| EAS | 310 mJ - enables robust handling of unclamped inductive energy in relay/snubberless designs |
| RthJC | 3.0 °C/W - allows direct thermal path to heatsink via exposed drain pad, critical for >1 W dissipation |
| VGS(th) | -2.0 to -4.0 V - ensures reliable turn-on with -5 V or -10 V gate drive, avoiding partial enhancement |
Pinout & Package
DPAK (TO-252) package with exposed drain pad on bottom side for thermal conduction; three terminals: Gate (G), Drain (D), Source (S); standardized footprint per JEDEC MO-236AB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Controls channel conduction; requires -10 V for full enhancement; input capacitance Ciss = 340 pF affects switching speed |
| D | Drain | High-voltage terminal connected to exposed copper pad; serves as primary thermal path to PCB heatsink |
| S | Source | Reference node for gate drive; body diode anode; tied to system ground or positive rail in high-side topology |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Withstands 4.2 mJ repeated avalanche events without degradation - eliminates need for external snubbers in inductive load switching |
| Dynamic dV/dt immunity | -5.0 V/ns - prevents false turn-on during high dv/dt transients in motor drive or SMPS output stages |
| Surface-mount DPAK | TO-252 outline with thermal pad - enables automated assembly and 2.5 W PCB-mount power dissipation per Vishay spec |
| Fast switching | Turn-off delay 7.3 ns + fall time 19 ns - reduces switching losses in 100–500 kHz DC-DC topologies |
| P-channel configuration | Enables high-side switch without bootstrap or isolated gate drive - simplifies layout in battery polarity protection and OR-ing circuits |
Applications
| Battery Polarity Protection | High-Voltage DC-DC Converter |
|---|---|
Use Scenario: Preventing damage from reverse battery connection in 48 V telecom or EV auxiliary systems. IC Role / Device Role / Timing Role: P-channel MOSFET used as high-side series switch; blocks reverse current when VIN < 0 V relative to load ground. Use Value: Leverages -200 V VDS rating and -3.6 A ID to handle 48 V nominal with surge margin; no external driver needed due to P-channel logic compatibility. | Use Scenario: Synchronous rectification or high-side switch in isolated flyback or forward converter operating from 100–150 V input. IC Role / Device Role / Timing Role: Main switching element controlling energy transfer; operates in hard-switched mode at ≤300 kHz. Use Value: 1.5 Ω RDS(on) minimizes conduction loss at 2–3 A load; 20 nC Qg enables efficient gate drive with low-power controllers. |
| Industrial Motor Control | Power Supply OR-ing Circuit |
Use Scenario: Half-bridge high-side switch driving brushed DC motors in factory automation equipment. IC Role / Device Role / Timing Role: High-side switch in H-bridge leg; commutates motor current with controlled dead-time. Use Value: Repetitive avalanche rating (4.2 mJ) absorbs inductive kickback during PWM transitions; -5.0 V/ns dV/dt immunity prevents shoot-through. | Use Scenario: Redundant power supply selection in server PSUs or medical power modules requiring seamless switchover. IC Role / Device Role / Timing Role: Back-to-back configured P-channel MOSFET acting as ideal diode replacement. Use Value: Low RDS(on) cuts forward drop vs. Schottky diodes; body diode VSD = -6.3 V enables fast reverse recovery in fault conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR9120TRPbF | -100 V VDS, 0.44 Ω RDS(on), lower voltage rating and lower on-resistance | Not suitable for 150 V bus systems; limited to ≤60 V applications | Select only if system VIN ≤ 80 V and lower conduction loss is prioritized over voltage margin |
| SiHFR9220-GE3 | Identical VDS, RDS(on), Qg, and package; halogen-free, lead-free per RoHS | No functional difference; same pinout and thermal performance | Preferred for new designs requiring RoHS compliance; drop-in replacement with identical electrical behavior |
Compared with IRFR9220TR, IRFR9120TRPbF offers lower on-resistance but insufficient voltage headroom for 100+ V systems, while SiHFR9220-GE3 matches all key parameters and adds environmental compliance - making it the optimal upgrade path without layout or firmware changes.
Availability
IRFR9220TR is available at Aetrix Electronics and suitable for industrial motor drives, high-voltage DC-DC converters, and battery protection circuits requiring stable component supply across extended production lifecycles.
Supply support for IRFR9220TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.
The IRFR9220TR belongs to Vishay's high-voltage P-channel Power MOSFET family, engineered for demanding industrial and automotive applications where avalanche capability, dV/dt immunity, and surface-mount thermal efficiency are critical.
FAQ
What is the maximum continuous drain current for IRFR9220TR at 100 °C case temperature?
The IRFR9220TR supports -2.3 A continuous drain current at TC = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package; designers must ensure adequate heatsinking or PCB copper area to maintain case temperature below this threshold during sustained operation. The linear derating factor is 0.33 W/°C above 25 °C ambient.
Does IRFR9220TR have a specified avalanche energy rating?
Yes, the IRFR9220TR is repetitively avalanche rated with EAR = 4.2 mJ and single-pulse EAS = 310 mJ. These values are measured under defined test conditions (VDD = -50 V, L = 35 mH, Rg = 25 Ω, IAS = -3.6 A) and confirm its ability to absorb inductive energy without failure - a key differentiator for relay driving and motor control.
What is the gate-source threshold voltage range for IRFR9220TR?
The IRFR9220TR has a gate-source threshold voltage VGS(th) ranging from -2.0 V to -4.0 V at TJ = 25 °C, with ID = -250 μA. This ensures reliable turn-on with standard -5 V or -10 V gate drive while preventing accidental conduction near 0 V. The negative polarity confirms its P-channel nature and distinguishes it from N-channel alternatives.
Can IRFR9220TR be used in through-hole applications?
No, the IRFR9220TR is specifically a surface-mount DPAK (TO-252) variant. Through-hole equivalents include IRFU9220 (IPAK/TO-251) and SiHFU9220 - both share identical electrical specs but differ in package and mounting method. Substituting IRFR9220TR into a through-hole footprint will result in mechanical incompatibility and solder joint failure.
What is the thermal resistance from junction to case for IRFR9220TR?
The IRFR9220TR has a maximum junction-to-case (drain) thermal resistance RthJC of 3.0 °C/W. This value applies to heat flow from the silicon die to the exposed drain pad, and is critical for calculating junction temperature when the device is mounted on a heatsink or thermally enhanced PCB. It assumes proper soldering of the drain pad per Vishay's recommended land pattern.
IRFR9220TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 2.2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 340 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR9220TR FAQ
1.How can I place an order for IRFR9220TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9220TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9220TR reliable?
The price and inventory of IRFR9220TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9220TR is usually 5 days.
3.What payment methods are accepted for IRFR9220TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9220TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9220TR?
IRFR9220TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9220TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9220TR?
For technical support, including IRFR9220TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9220TR requirements.
6.How does Aetrix verify that IRFR9220TR is sourced from the original manufacturer or authorized distributors?
All IRFR9220TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9220TR meets industry standards.
7.What is the process for return or replacement of IRFR9220TR?
All IRFR9220TR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9220TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9220TR part is unused and in its original packaging.
Return procedure for IRFR9220TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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