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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR9220TRL

Name: IRFR9220TRL
Brand: Vishay Siliconix
SKU: IRFR9220TRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR9220TRL

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9220TRL.pdf

Description:: MOSFET P-CH 200V 3.6A DPAK

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Product details

Overview

IRFR9220TRL from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -200 V drain-source voltage, 1.5 Ω R_DS(on) at V_GS = -10 V, and -3.6 A continuous drain current at T_C = 25 °C. It supports fast switching, repetitive avalanche operation, and is used in high-voltage DC-DC converters and industrial motor control circuits.

For engineers reviewing the IRFR9220TRL datasheet, IRFR9220TRL pinout, IRFR9220TRL application, or IRFR9220TRL equivalent, this page delivers verified electrical parameters, thermal resistance values, gate charge metrics, body diode recovery characteristics, and validated alternative parts for high-reliability P-channel high-side switch design.

Technical Context

This device employs Vishay's third-generation Power MOSFET technology with optimized geometry and processing to achieve low on-resistance while maintaining high transconductance and ruggedness against unclamped inductive switching. Its -200 V V_DS rating and -3.6 A I_D support high-voltage off-line applications requiring robust blocking capability.

The IRFR9220TRL features a dynamic dV/dt rating of -5.0 V/ns, repetitive avalanche energy of 4.2 mJ, and integrated body diode with t_rr = 150–300 ns and Q_rr = 0.97–2.0 μC - enabling reliable operation in hard-switched topologies where reverse recovery stress occurs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-200 V - Supports high-voltage DC bus isolation up to 200 V reverse polarity.
R_DS(on)	1.5 Ω @ V_GS = -10 V - Enables low conduction loss in high-side switch configurations at moderate load currents.
Q_g	20 nC - Determines gate drive power requirement and switching speed in PWM-controlled circuits.
I_D (cont.)	-3.6 A @ T_C = 25 °C - Specifies maximum steady-state current under heatsink-cooled conditions.
E_AS	310 mJ - Quantifies single-pulse avalanche energy handling without failure during inductive turn-off.
R_thJC	3.0 °C/W - Indicates thermal path efficiency from junction to case, critical for heatsink sizing in power stages.
V_GS(th)	-2.0 to -4.0 V - Defines gate voltage range needed to initiate conduction, supporting standard logic-level drive compatibility.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal management; three terminals: Gate (G), Drain (D), Source (S). Mounting uses vapor phase, infrared, or wave soldering per JEDEC standards.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel formation; requires -10 V for full enhancement; ±20 V absolute max rating.
D	Drain	Main high-voltage terminal; electrically connected to exposed thermal pad; handles -200 V blocking.
S	Source	Reference node for gate drive; carries full load current; tied to system ground in high-side configuration.

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables reliable operation under inductive load switching without external snubbers in flyback or buck-derived topologies.
Dynamic dV/dt rating	-5.0 V/ns - Suppresses false turn-on during high dv/dt transients in high-side switch applications.
Surface-mount (DPAK)	Optimized for automated assembly and thermal performance on PCBs with copper pour under drain pad.
Fast switching	td(on) = 8.8 ns, tr = 27 ns, td(off) = 7.3 ns - Reduces switching losses in high-frequency DC-DC converters.
Integrated body diode	V_SD = -6.3 V @ I_S = -3.6 A - Provides freewheeling path with controlled reverse recovery for synchronous rectification alternatives.

Applications

Industrial Motor Control	High-Voltage DC-DC Converters
Use Scenario: High-side switch in brushed DC motor H-bridge driver operating from 100–180 V DC bus. IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled high-side power delivery with avalanche ruggedness during back-EMF spikes. Use Value: -200 V V_DS and 310 mJ E_AS prevent failure during motor stall or rapid direction reversal.	Use Scenario: Primary-side switch in isolated flyback converter for industrial sensor power supply (24 V output from 150 V input). IC Role / Device Role / Timing Role: High-voltage P-channel switch controlling energy transfer into transformer primary winding. Use Value: 1.5 Ω R_DS(on) minimizes conduction loss at 3.6 A peak, while 20 nC Q_g enables efficient 100–250 kHz operation.
Telecom Power Supplies	Overvoltage Protection Circuits
Use Scenario: Input stage switch in -48 V telecom rectifier module with hot-swap capability. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as OR-ing and inrush limiting element. Use Value: -4.0 V V_GS(th) upper limit ensures predictable turn-on with standard -5 V gate drivers; R_thJC = 3.0 °C/W supports compact heatsinking.	Use Scenario: Crowbar device in programmable lab power supply protecting downstream loads from >200 V faults. IC Role / Device Role / Timing Role: Voltage-triggered clamping switch activated by overvoltage detection circuitry. Use Value: Repetitive avalanche rating (I_AR = -3.6 A, E_AR = 4.2 mJ) sustains repeated fault events without degradation.

Industrial Motor Control

High-Voltage DC-DC Converters

Use Scenario: High-side switch in brushed DC motor H-bridge driver operating from 100–180 V DC bus.

IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled high-side power delivery with avalanche ruggedness during back-EMF spikes.

Use Value: -200 V V_DS and 310 mJ E_AS prevent failure during motor stall or rapid direction reversal.

Use Scenario: Primary-side switch in isolated flyback converter for industrial sensor power supply (24 V output from 150 V input).

IC Role / Device Role / Timing Role: High-voltage P-channel switch controlling energy transfer into transformer primary winding.

Use Value: 1.5 Ω R_DS(on) minimizes conduction loss at 3.6 A peak, while 20 nC Q_g enables efficient 100–250 kHz operation.

Telecom Power Supplies

Overvoltage Protection Circuits

Use Scenario: Input stage switch in -48 V telecom rectifier module with hot-swap capability.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as OR-ing and inrush limiting element.

Use Value: -4.0 V V_GS(th) upper limit ensures predictable turn-on with standard -5 V gate drivers; R_thJC = 3.0 °C/W supports compact heatsinking.

Use Scenario: Crowbar device in programmable lab power supply protecting downstream loads from >200 V faults.

IC Role / Device Role / Timing Role: Voltage-triggered clamping switch activated by overvoltage detection circuitry.

Use Value: Repetitive avalanche rating (I_AR = -3.6 A, E_AR = 4.2 mJ) sustains repeated fault events without degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR9120PbF	V_DS = -200 V, R_DS(on) = 2.7 Ω @ -10 V, Q_g = 15 nC - higher on-resistance, lower gate charge.	Lower current capability (-2.5 A cont.) limits use in >2 A average load applications.	Select when lower gate drive power is prioritized over conduction loss in low-duty-cycle switching.
SiHFR9220-GE3	Same V_DS, R_DS(on), and Q_g; Pb-free/halogen-free construction; identical DPAK package and pinout.	No functional difference; RoHS-compliant variant for environmentally regulated production.	Direct replacement where lead-free compliance is mandatory; verify tape-and-reel packaging compatibility.

Compared with IRFR9220TRL, IRFR9120PbF trades higher conduction loss for reduced gate drive demand, while SiHFR9220-GE3 offers identical electrical and mechanical performance with updated environmental compliance - making it the preferred drop-in upgrade path.

Availability

IRFR9220TRL is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC conversion, and telecom power supply designs requiring stable component supply across extended production lifecycles.

Supply support for IRFR9220TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRFR9220TRL belongs to Vishay's high-voltage P-channel Power MOSFET family, engineered for demanding industrial and telecom applications where avalanche capability, thermal stability, and surface-mount manufacturability are essential.

FAQ

What is the maximum continuous drain current for IRFR9220TRL at 100 °C case temperature?

The IRFR9220TRL supports -2.3 A continuous drain current at T_C = 100 °C, derived from its linear derating factor of 0.33 W/°C and 42 W maximum power dissipation at 25 °C. This value reflects thermal limitation under heatsink-cooled conditions and must be validated with actual PCB layout and ambient airflow.

Does IRFR9220TRL have a specified body diode reverse recovery time?

Yes, the IRFR9220TRL body diode has a reverse recovery time (t_rr) of 150–300 ns at T_J = 25 °C, I_F = -3.9 A, and dI/dt = 100 A/μs. This parameter is critical for evaluating commutation losses in synchronous rectifier or bidirectional switch applications where the intrinsic diode conducts.

Is IRFR9220TRL compatible with standard DPAK footprint layouts?

Yes, IRFR9220TRL uses the TO-252AA (DPAK) package with standardized dimensions per JEDEC outline, including 2.29 mm lead pitch (e), 6.095 mm D dimension, and 6.54 mm E dimension. Recommended minimum pads per Application Note 826 ensure reliable solder joint formation and thermal conduction.

What is the gate-source threshold voltage range for IRFR9220TRL?

The IRFR9220TRL has a gate-source threshold voltage (V_GS(th)) range of -2.0 V to -4.0 V at V_DS = V_GS and I_D = -250 μA. This ensures consistent turn-on behavior with -5 V logic-level gate drivers while avoiding unintended conduction near 0 V.

Can IRFR9220TRL be used in avalanche mode repeatedly?

Yes, the IRFR9220TRL is explicitly rated for repetitive avalanche operation with I_AR = -3.6 A and E_AR = 4.2 mJ, provided pulse width is limited by maximum junction temperature (T_J ≤ 150 °C). This capability eliminates need for external clamping in many inductive switching circuits.

IRFR9220TRL Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 340 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR9220TRL FAQ

1.How can I place an order for IRFR9220TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9220TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9220TRL reliable?

The price and inventory of IRFR9220TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9220TRL is usually 5 days.

3.What payment methods are accepted for IRFR9220TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9220TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9220TRL?

IRFR9220TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9220TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9220TRL?

For technical support, including IRFR9220TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9220TRL requirements.

6.How does Aetrix verify that IRFR9220TRL is sourced from the original manufacturer or authorized distributors?

All IRFR9220TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9220TRL meets industry standards.

7.What is the process for return or replacement of IRFR9220TRL?

All IRFR9220TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9220TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9220TRL part is unused and in its original packaging.

Return procedure for IRFR9220TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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