Vishay Siliconix IRFR9220TRLPBF
- Part No.:
- IRFR9220TRLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9220TRLPBF.pdf
- Description:
- MOSFET P-CH 200V 3.6A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:2,455
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Product details
Overview
IRFR9220TRLPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -200 V drain-source voltage, 1.5 Ω RDS(on) at VGS = -10 V, and -3.6 A continuous drain current at TC = 25 °C. It supports fast switching, repetitive avalanche operation, and is used in high-voltage DC-DC converters and industrial motor control circuits.
For engineers reviewing the IRFR9220TRLPBF datasheet, IRFR9220TRLPBF pinout, IRFR9220TRLPBF application, or IRFR9220TRLPBF equivalent, key selection criteria include its -200 V blocking capability, 1.5 Ω on-resistance, 20 nC total gate charge, ruggedness under unclamped inductive switching, and compatibility with standard DPAK PCB footprints and reflow profiles.
Technical Context
This device uses Vishay's third-generation Power MOSFET technology to achieve low RDS(on) while maintaining high transconductance and extreme ruggedness. Its P-channel architecture enables high-side switching without level-shifting circuitry in buck regulators and load-switch applications.
The IRFR9220TRLPBF features dynamic dV/dt immunity up to -5.0 V/ns, is rated for repetitive avalanche energy (4.2 mJ), and supports linear derating of 0.33 W/°C above 25 °C case temperature. Its body diode exhibits 150–300 ns reverse recovery time and -6.3 V forward drop at -3.6 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -200 V - Supports high-voltage DC bus isolation in industrial power supplies and motor drives. |
| RDS(on) | 1.5 Ω @ VGS = -10 V - Enables low conduction loss in 3–5 A load-switching applications. |
| Qg | 20 nC - Determines gate drive power requirement; compatible with standard logic-level drivers. |
| ID (cont.) | -3.6 A @ TC = 25 °C - Sustains continuous current in thermally managed PCB-mount designs. |
| EAS | 310 mJ - Withstands single-pulse inductive energy in relay/snubberless flyback circuits. |
| RthJC | 3.0 °C/W - Enables efficient heat transfer to heatsink or copper pour in compact layouts. |
| VGS(th) | -2.0 to -4.0 V - Ensures reliable turn-on with standard -10 V gate drive; not logic-level compatible. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source (viewed from top, marking side up, leads down).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control terminal | Accepts negative VGS to modulate channel; requires stable -10 V bias for full enhancement. |
| Drain (D) | High-side power input | Connected to negative HV rail; electrically and thermally tied to exposed metal tab. |
| Source (S) | Reference node / output | Serves as return path; defines common reference for gate drive and load current sensing. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Withstands 4.2 mJ per pulse at IAR = -3.6 A - eliminates need for external snubbers in inductive switching. |
| Dynamic dV/dt immunity | -5.0 V/ns - prevents false turn-on during fast voltage transients in high-noise environments. |
| Surface-mount DPAK | Compatible with vapor-phase, infrared, and wave soldering - supports automated assembly and high-density PCB layout. |
| Low RDS(on) × Qg figure-of-merit | 1.5 Ω × 20 nC = 30 Ω·nC - balances conduction and switching losses in 100–500 kHz SMPS designs. |
| Body diode with controlled recovery | trr = 150–300 ns, Qrr = 0.97–2.0 μC - reduces switching stress and EMI in synchronous rectifier alternatives. |
Applications
| Industrial Motor Control | High-Voltage DC-DC Converters |
|---|---|
Use Scenario: Half-bridge high-side switch in 100–200 V brushed DC motor driver. IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled high-side power delivery with no bootstrap complexity. Use Value: Eliminates need for isolated gate drive; leverages -200 V rating and 1.5 Ω RDS(on) to sustain 3.6 A loads at <1.5 W conduction loss. | Use Scenario: Primary-side switch in non-isolated buck converter powering industrial sensors from 150 V DC bus. IC Role / Device Role / Timing Role: High-voltage P-channel switch operating at 250 kHz with minimal dead-time sensitivity. Use Value: Uses 20 nC Qg and -5.0 V/ns dV/dt rating to maintain clean switching edge and reduce gate drive losses. |
| Load Switching | Power Supply OR'ing |
Use Scenario: Hot-swap protection and inrush limiting for 48–100 V backup power modules. IC Role / Device Role / Timing Role: Low-RDS(on) P-channel switch enabling soft-start and fault current limiting via gate control. Use Value: Leverages -200 V rating and 310 mJ single-pulse avalanche energy to absorb transient overloads without failure. | Use Scenario: Reverse-polarity and backfeed protection in redundant 24–60 V telecom power systems. IC Role / Device Role / Timing Role: Back-to-back configured P-channel MOSFET acting as ideal diode replacement. Use Value: Achieves <1.5 Ω on-resistance and -6.3 V body diode drop to minimize forward voltage loss versus Schottky solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR9120TRLPBF | -100 V VDS, 0.44 Ω RDS(on), 12 nC Qg - lower voltage, lower loss, faster switching. | Not suitable for >100 V rails; preferred in 24–48 V industrial controls where lower RDS(on) dominates efficiency. | Select IRFR9120TRLPBF only when system VDS ≤ 100 V and lower conduction loss is critical. |
| SiHFR9220-GE3 | Identical VDS, RDS(on), Qg, and package; Vishay's lead-free/halogen-free version with same die and thermal performance. | No functional difference; differs only in RoHS compliance and tape/reel packaging (GE3 suffix). | SiHFR9220-GE3 is a direct material-compliance alternative; use when Pb-free/halogen-free certification is required. |
Compared with IRFR9220TRLPBF, IRFR9120TRLPBF offers higher efficiency below 100 V but fails at 150+ V operation, while SiHFR9220-GE3 delivers identical electrical and thermal behavior with updated environmental compliance - making it the preferred drop-in replacement for new designs requiring RoHS adherence.
Availability
IRFR9220TRLPBF is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC conversion, and load switching applications requiring stable component supply across extended production lifecycles.
Supply support for IRFR9220TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and automotive applications.
The IRFR9220TRLPBF belongs to Vishay's high-voltage P-channel Power MOSFET family, engineered for ruggedness in unclamped inductive switching and stable operation in harsh thermal environments.
FAQ
What is the maximum continuous drain current rating for IRFR9220TRLPBF at 100 °C case temperature?
The IRFR9220TRLPBF supports -2.3 A continuous drain current at TC = 100 °C, derived from its linear derating factor of 0.33 W/°C and 42 W maximum power dissipation at 25 °C. This value reflects thermal limits under sustained conduction in properly heatsinked DPAK layouts, and must be validated against actual board thermal resistance in the target application.
Does IRFR9220TRLPBF have a specified body diode reverse recovery time?
Yes, the IRFR9220TRLPBF body diode has a reverse recovery time (trr) of 150–300 ns at TJ = 25 °C, IF = -3.9 A, and dI/dt = 100 A/μs. This parameter is critical for evaluating switching losses and EMI in hard-commutated topologies like buck converters and H-bridges where the body diode conducts freewheeling current.
Can IRFR9220TRLPBF be driven directly by a 3.3 V microcontroller GPIO?
No, IRFR9220TRLPBF cannot be fully enhanced by 3.3 V logic. Its gate threshold voltage range is -2.0 to -4.0 V, and RDS(on) is specified only at VGS = -10 V. A 3.3 V signal yields insufficient negative gate drive; a dedicated negative gate driver or level-shifter generating ≥ -10 V is required for reliable saturation and low conduction loss.
What is the thermal resistance from junction to case (RthJC) for IRFR9220TRLPBF?
The IRFR9220TRLPBF has a maximum junction-to-case (drain) thermal resistance of 3.0 °C/W. This value applies when the exposed drain pad is soldered to a sufficiently large copper area or heatsink, and is essential for calculating junction temperature rise under steady-state power dissipation in PCB-mounted applications.
Is IRFR9220TRLPBF rated for repetitive avalanche operation?
Yes, IRFR9220TRLPBF is explicitly rated for repetitive avalanche operation with IAR = -3.6 A and EAR = 4.2 mJ per pulse. This rating is validated under conditions of VDD = -50 V, starting TJ = 25 °C, L = 35 mH, and Rg = 25 Ω, enabling robust design in inductive load switching without external clamping components.
IRFR9220TRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 2.2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 340 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR9220TRLPBF FAQ
1.How can I place an order for IRFR9220TRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9220TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9220TRLPBF reliable?
The price and inventory of IRFR9220TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9220TRLPBF is usually 5 days.
3.What payment methods are accepted for IRFR9220TRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9220TRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9220TRLPBF?
IRFR9220TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9220TRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9220TRLPBF?
For technical support, including IRFR9220TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9220TRLPBF requirements.
6.How does Aetrix verify that IRFR9220TRLPBF is sourced from the original manufacturer or authorized distributors?
All IRFR9220TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9220TRLPBF meets industry standards.
7.What is the process for return or replacement of IRFR9220TRLPBF?
All IRFR9220TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9220TRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9220TRLPBF part is unused and in its original packaging.
Return procedure for IRFR9220TRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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