My Inquiry
My Account
Vishay Siliconix IRFR9220TRPBF-BE3
- Part No.:
- IRFR9220TRPBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9220TRPBF-BE3.pdf
- Description:
- MOSFET P-CH 200V 3.6A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,132
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFR9220TRPBF-BE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -200 V drain-source voltage, 1.5 Ω RDS(on) at VGS = -10 V, and -3.6 A continuous drain current at TC = 25 °C. It delivers fast switching with 20 nC total gate charge and supports unclamped inductive switching with 310 mJ single-pulse avalanche energy - used in high-voltage DC-DC converters and industrial motor control H-bridge topologies.
For engineers reviewing the IRFR9220TRPBF-BE3 datasheet, IRFR9220TRPBF-BE3 pinout, IRFR9220TRPBF-BE3 application, or IRFR9220TRPBF-BE3 equivalent, key selection criteria include its -200 V blocking capability, repetitive avalanche rating, dynamic dV/dt tolerance of -5.0 V/ns, PCB-mount thermal resistance of 50 °C/W, and compatibility with standard DPAK footprint layouts per Vishay Application Note 826.
Technical Context
This device employs Vishay's third-generation Power MOSFET technology, featuring optimized geometry and processing to achieve low on-resistance while maintaining high transconductance (1.1 S typical) and ruggedness against repetitive avalanche stress. Its P-channel configuration enables high-side switching without level-shifting circuitry in buck or synchronous rectifier designs.
The IRFR9220TRPBF-BE3 integrates a robust body diode with 150–300 ns reverse recovery time and 0.97–2.0 μC Qrr, supporting moderate-frequency hard-switched operation. Gate drive requirements are defined by VGS(th) of -2.0 to -4.0 V and ±100 nA gate leakage, ensuring stable turn-on under logic-level (-10 V) or higher-voltage gate drive conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -200 V - Supports high-voltage DC bus isolation in industrial power supplies and motor drives up to 200 V rail. |
| RDS(on) | 1.5 Ω @ VGS = -10 V - Enables <1.5 W conduction loss at -2.2 A, suitable for medium-power switching stages. |
| ID (cont.) | -3.6 A @ TC = 25 °C - Delivers reliable output current in thermally managed DPAK PCB-mount applications. |
| Qg | 20 nC - Determines gate driver power requirement; compatible with standard 1-A peak drivers for ≤100 kHz switching. |
| EAS | 310 mJ - Allows safe operation in unclamped inductive load switching without external snubbers. |
| RthJA (PCB) | 50 °C/W - Requires ≥1"² FR-4 copper area for thermal compliance at full 2.5 W ambient-rated power dissipation. |
| VGS(th) | -2.0 to -4.0 V - Ensures predictable turn-on with standard negative gate bias; avoids partial enhancement near 0 V. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction. Standard 3-pin layout: Gate (G), Drain (D), Source (S). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control electrode | Accepts negative VGS to modulate channel; requires <±100 nA drive current and tolerates ±20 V max. |
| Drain (D) | High-voltage power terminal | Connected to exposed metal tab; carries full load current and must be thermally coupled to PCB copper pour. |
| Source (S) | Reference node / return path | Serves as common reference for gate drive and load current; body diode anode is internally tied to source. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables reliable operation under transient overcurrent without derating or external protection in motor drive fault conditions. |
| Dynamic dV/dt rating | -5.0 V/ns immunity prevents false turn-on during high dv/dt transients in half-bridge configurations. |
| P-channel enhancement mode | Eliminates need for bootstrap or isolated gate drivers in high-side switch applications like buck regulators. |
| Surface-mount DPAK package | Compatible with automated assembly and offers 3.0 °C/W junction-to-case thermal resistance for efficient heat transfer. |
| Fast switching performance | 8.8 ns turn-on delay + 27 ns rise time enables efficient operation up to ~200 kHz in hard-switched topologies. |
Applications
| Industrial Motor Control | High-Voltage DC-DC Converters |
|---|---|
Use Scenario: Bidirectional H-bridge driver for 100–180 V DC brushed motors in factory automation systems. IC Role / Device Role / Timing Role: High-side P-channel switch enabling polarity reversal without level shifters or floating supplies. Use Value: Avalanche rating absorbs inductive kickback during PWM commutation; -200 V VDS ensures margin against bus transients. |
Use Scenario: Synchronous rectifier in isolated flyback or forward converter operating from 120–170 VDC input. IC Role / Device Role / Timing Role: Low-loss secondary-side switch replacing Schottky diodes to improve efficiency at light-to-moderate loads. Use Value: 1.5 Ω RDS(on) reduces conduction loss vs. 0.5 V diode drop; body diode supports startup before gate drive activation. |
| Uninterruptible Power Supplies | LED Driver Circuits |
Use Scenario: Transfer switch in line-interactive UPS managing battery backup engagement during AC failure. IC Role / Device Role / Timing Role: High-voltage P-channel pass transistor controlling battery-to-inverter path with minimal voltage drop. Use Value: -200 V rating accommodates 170 V nominal battery strings; 310 mJ EAS withstands surge currents during switchover. |
Use Scenario: Dimmable constant-current LED string driver with analog/PWM dimming in commercial lighting fixtures. IC Role / Device Role / Timing Role: High-side current regulator switch modulating LED current via source-follower configuration. Use Value: Precise VGS(th) range (-2.0 to -4.0 V) enables stable analog dimming control; low Qg supports clean PWM edges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR9120TRPBF-BE3 | -100 V VDS, 0.42 Ω RDS(on), lower voltage rating and on-resistance | Not suitable for >120 V bus applications; better for cost-sensitive 48–96 V systems | Select when system voltage is ≤100 V and lower conduction loss is prioritized over voltage margin. |
| SiHFR9220-GE3 | Identical electrical specs and DPAK package; Vishay's newer halogen-free variant with same die and thermal performance | No functional difference; RoHS/REACH-compliant alternative with identical layout and reliability data | Prefer for new designs requiring halogen-free compliance; pin-to-pin and thermal drop-in replacement. |
Compared with IRFR9220TRPBF-BE3, IRFR9120TRPBF-BE3 trades voltage headroom for lower RDS(on) in sub-100 V systems, while SiHFR9220-GE3 provides identical performance with updated environmental compliance - both require no PCB redesign but differ in voltage capability and regulatory status.
Availability
IRFR9220TRPBF-BE3 is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC conversion, and uninterruptible power supply applications requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.
Supply support for IRFR9220TRPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics with vertically integrated manufacturing and rigorous qualification standards.
The IRFR9220TRPBF-BE3 belongs to Vishay's high-voltage P-channel Power MOSFET family, engineered for ruggedness in industrial power conversion, motor control, and backup power systems where avalanche tolerance and thermal stability are critical.
FAQ
What is the maximum continuous drain current for IRFR9220TRPBF-BE3 at 100 °C case temperature?
The IRFR9220TRPBF-BE3 supports -2.3 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits of the DPAK package and requires adequate PCB copper area to maintain junction temperature below 150 °C. The IRFR9220TRPBF-BE3 must be mounted on ≥1"² FR-4 board per Vishay's thermal test condition to achieve this rating.
Does IRFR9220TRPBF-BE3 have a specified body diode reverse recovery time?
Yes, the IRFR9220TRPBF-BE3 body diode has a reverse recovery time (trr) of 150–300 ns at TJ = 25 °C, IF = -3.9 A, and dI/dt = 100 A/μs. This parameter is critical for synchronous rectification and bidirectional switching applications where diode conduction precedes active MOSFET conduction. The IRFR9220TRPBF-BE3 also specifies Qrr = 0.97–2.0 μC for accurate loss calculation.
Can IRFR9220TRPBF-BE3 be used in avalanche mode repeatedly?
Yes, the IRFR9220TRPBF-BE3 is explicitly rated for repetitive avalanche operation with IAR = -3.6 A and EAR = 4.2 mJ, provided pulse width is limited by maximum junction temperature (TJ ≤ 150 °C). This capability allows safe handling of inductive energy in motor drive freewheeling and relay snubbing without external clamps. The IRFR9220TRPBF-BE3 datasheet confirms this in the Absolute Maximum Ratings table and Figure 12.
What is the gate threshold voltage range for IRFR9220TRPBF-BE3?
The gate-source threshold voltage (VGS(th)) for IRFR9220TRPBF-BE3 is specified from -2.0 V to -4.0 V at VDS = VGS and ID = -250 μA. This range ensures consistent turn-on behavior across temperature and process variation, supporting reliable operation with -10 V gate drive while avoiding unintended conduction near 0 V. The IRFR9220TRPBF-BE3 does not support logic-level (e.g., -5 V) gate drive without risk of incomplete enhancement.
Is IRFR9220TRPBF-BE3 compatible with standard DPAK footprint recommendations?
Yes, the IRFR9220TRPBF-BE3 uses the TO-252AA (DPAK) package and aligns with Vishay Application Note 826 recommended minimum pads: 0.224" × 0.180" (5.69 mm × 4.57 mm) for the source pad and 0.243" × 0.090" (6.18 mm × 2.29 mm) for the drain thermal pad. The IRFR9220TRPBF-BE3 mechanical drawings confirm dimensions matching JEDEC outline TO-252, ensuring compatibility with standard stencil and reflow profiles.
IRFR9220TRPBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 2.2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 340 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
IRFR9220TRPBF-BE3 FAQ
1.How can I place an order for IRFR9220TRPBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9220TRPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9220TRPBF-BE3 reliable?
The price and inventory of IRFR9220TRPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9220TRPBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFR9220TRPBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9220TRPBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9220TRPBF-BE3?
IRFR9220TRPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9220TRPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9220TRPBF-BE3?
For technical support, including IRFR9220TRPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9220TRPBF-BE3 requirements.
6.How does Aetrix verify that IRFR9220TRPBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFR9220TRPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9220TRPBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFR9220TRPBF-BE3?
All IRFR9220TRPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9220TRPBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9220TRPBF-BE3 part is unused and in its original packaging.
Return procedure for IRFR9220TRPBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFR9220TRPBF-BE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
