Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR9220TRRPBF

Name: IRFR9220TRRPBF
Brand: Vishay Siliconix
SKU: IRFR9220TRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFR9220TRRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9220TRRPBF.pdf

Description:: MOSFET P-CH 200V 3.6A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,994

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFR9220TRRPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -200 V drain-source voltage, 1.5 Ω R_DS(on) at V_GS = -10 V, and -3.6 A continuous drain current at T_C = 25 °C. It delivers fast switching with 20 nC total gate charge and supports unclamped inductive switching up to 310 mJ single-pulse avalanche energy - used in high-voltage DC-DC converters and motor control H-bridge high-side switches.

For engineers reviewing the IRFR9220TRRPBF datasheet, IRFR9220TRRPBF pinout, IRFR9220TRRPBF application, or IRFR9220TRRPBF equivalent, this page provides verified electrical parameters, thermal derating data, body diode recovery characteristics, and real-world mounting guidance for PCB layout and thermal management.

Technical Context

This device uses Vishay's third-generation Power MOSFET technology optimized for low R_DS(on) and high ruggedness, featuring dynamic dV/dt rating (-5.0 V/ns) and repetitive avalanche capability (I_AR = -3.6 A). Its P-channel topology enables high-side switching without level-shifting circuitry in buck regulators and load-switch applications.

The DPAK package provides 3.0 °C/W junction-to-case thermal resistance and supports vapor-phase, infrared, or wave soldering. With 110 °C/W junction-to-ambient (free-air) and 50 °C/W (1" FR-4 PCB mount), thermal performance is defined for both discrete heatsink and board-level conduction paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-200 V - Maximum blocking voltage for high-voltage industrial and telecom power rails
R_DS(on)	1.5 Ω @ V_GS = -10 V - Enables <1.5 W conduction loss at -2.2 A, critical for efficiency in 24–48 V systems
I_D (cont.)	-3.6 A @ T_C = 25 °C - Continuous current rating under heatsink-cooled conditions
Q_g	20 nC - Gate drive energy requirement determines driver sizing and switching loss in PWM circuits
E_AS	310 mJ - Single-pulse avalanche robustness allows safe operation during inductive turn-off transients
V_SD	-6.3 V @ I_S = -3.6 A - Body diode forward voltage impacts freewheeling losses in synchronous rectification
R_thJC	3.0 °C/W - Confirms effective thermal path from die to heatsink via exposed drain pad

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal and electrical connection; surface-mount footprint compatible with IPC-7351B standard; recommended minimum pad dimensions per Vishay Application Note 826.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of P-channel MOSFET	Reference node for gate drive; connects to positive rail in high-side switch configuration
Pin 2 (Gate)	Control electrode	Receives negative gate voltage relative to source to turn on; threshold range -2.0 to -4.0 V
Pin 3 (Drain)	Main current-carrying terminal	Exposed metal pad on underside - electrically and thermally connected to internal drain; must be routed to high-voltage input or load return

Key Features

Feature	Design Value
Dynamic dV/dt rating	-5.0 V/ns - Prevents false turn-on during high dv/dt noise in motor drives and SMPS
Repetitive avalanche rated	I_AR = -3.6 A - Sustains repeated inductive energy dissipation without degradation
Fast switching	t_r = 27 ns, t_f = 19 ns - Reduces transition losses in >100 kHz DC-DC topologies
P-channel enhancement mode	V_GS(th) = -2.0 to -4.0 V - Simplifies gate drive in high-side configurations vs. N-channel alternatives requiring bootstrap or isolated supplies
Surface-mount (DPAK)	TO-252 outline with thermal pad - Enables automated assembly and efficient PCB heat spreading without through-hole holes

Applications

High-Voltage DC-DC Converters	Industrial Motor Control
Use Scenario: Step-down conversion from 100–200 V DC bus to 12–24 V for PLC I/O modules and sensor interfaces. IC Role / Device Role / Timing Role: High-side P-channel switch in synchronous buck topology; operates at 100–500 kHz with fixed or variable frequency PWM. Use Value: -200 V V_DS rating ensures margin against line transients; 1.5 Ω R_DS(on) limits conduction loss to <1.2 W at full load, supporting compact thermal design.	Use Scenario: Half-bridge high-side switch in 24–48 V brushed DC motor drivers for factory automation actuators. IC Role / Device Role / Timing Role: Upper-leg switch controlling motor voltage polarity; commutated with dead-time-controlled complementary N-channel low-side FET. Use Value: Repetitive avalanche rating (-3.6 A) absorbs inductive kickback during PWM off-time; -5.0 V/ns dV/dt immunity prevents shoot-through in noisy EMI environments.
Telecom Power Supplies	Load Switching & OR-ing
Use Scenario: Primary-side switch in isolated flyback or forward converters powering 48 V telecom equipment. IC Role / Device Role / Timing Role: Main power switch handling primary current; driven by UC384x or similar controller with gate resistor tuning. Use Value: 310 mJ single-pulse avalanche energy withstands worst-case transformer leakage inductance spikes; TO-252 thermal pad enables direct heatsink attachment for 42 W P_D capability.	Use Scenario: Hot-swap and redundancy control in dual-power-supply systems (e.g., server backplanes). IC Role / Device Role / Timing Role: P-channel load switch enabling controlled inrush limiting and reverse-current blocking between redundant rails. Use Value: Body diode V_SD = -6.3 V ensures low forward drop during OR-ing; -200 V rating accommodates transient overvoltage during supply switchover.

High-Voltage DC-DC Converters

Industrial Motor Control

Use Scenario: Step-down conversion from 100–200 V DC bus to 12–24 V for PLC I/O modules and sensor interfaces.

IC Role / Device Role / Timing Role: High-side P-channel switch in synchronous buck topology; operates at 100–500 kHz with fixed or variable frequency PWM.

Use Value: -200 V V_DS rating ensures margin against line transients; 1.5 Ω R_DS(on) limits conduction loss to <1.2 W at full load, supporting compact thermal design.

Use Scenario: Half-bridge high-side switch in 24–48 V brushed DC motor drivers for factory automation actuators.

IC Role / Device Role / Timing Role: Upper-leg switch controlling motor voltage polarity; commutated with dead-time-controlled complementary N-channel low-side FET.

Use Value: Repetitive avalanche rating (-3.6 A) absorbs inductive kickback during PWM off-time; -5.0 V/ns dV/dt immunity prevents shoot-through in noisy EMI environments.

Telecom Power Supplies

Load Switching & OR-ing

Use Scenario: Primary-side switch in isolated flyback or forward converters powering 48 V telecom equipment.

IC Role / Device Role / Timing Role: Main power switch handling primary current; driven by UC384x or similar controller with gate resistor tuning.

Use Value: 310 mJ single-pulse avalanche energy withstands worst-case transformer leakage inductance spikes; TO-252 thermal pad enables direct heatsink attachment for 42 W P_D capability.

Use Scenario: Hot-swap and redundancy control in dual-power-supply systems (e.g., server backplanes).

IC Role / Device Role / Timing Role: P-channel load switch enabling controlled inrush limiting and reverse-current blocking between redundant rails.

Use Value: Body diode V_SD = -6.3 V ensures low forward drop during OR-ing; -200 V rating accommodates transient overvoltage during supply switchover.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR9120TRPBF	V_DS = -200 V, R_DS(on) = 2.7 Ω @ -10 V, Q_g = 14 nC - higher on-resistance, lower gate charge	Lower current capability (-2.5 A cont.) but faster switching; suited for lower-power, higher-frequency designs	Select when gate drive strength is limited and peak current ≤ 2.5 A suffices
SiHFR9220-GE3	Same V_DS, R_DS(on), Q_g, and package; halogen-free, lead-free per JEDEC J-STD-020 - identical electrical specs, different material compliance	No functional difference; meets RoHS 2/REACH and automotive PPAP requirements where IRFR9220TRRPBF does not	Select for new designs requiring full environmental compliance documentation and traceability

Compared with IRFR9220TRRPBF, IRFR9120TRPBF trades conduction loss for reduced gate drive demand, while SiHFR9220-GE3 offers identical performance with enhanced material compliance - neither is pin-compatible without verifying PCB land pattern and thermal pad layout alignment.

Availability

IRFR9220TRRPBF is available at Aetrix Electronics and suitable for high-voltage DC-DC converters, industrial motor control H-bridges, and telecom power supplies requiring stable component supply across long production lifecycles.

Supply support for IRFR9220TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power management solutions for industrial, automotive, and computing markets.

The IRFR9220TRRPBF belongs to Vishay's high-voltage P-channel Power MOSFET family, engineered for ruggedness in unclamped inductive switching and designed for use in high-side switching, load switching, and offline power conversion where simplicity of gate drive and avalanche tolerance are critical.

FAQ

What is the maximum continuous drain current for IRFR9220TRRPBF at 100 °C case temperature?

The IRFR9220TRRPBF supports -2.3 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package under sustained power dissipation; designers must ensure heatsinking maintains case temperature ≤ 100 °C to sustain this current level. The linear derating factor is 0.33 W/°C above 25 °C ambient, and PCB-mounted thermal resistance is 50 °C/W.

Does IRFR9220TRRPBF have avalanche capability, and how is it rated?

Yes, the IRFR9220TRRPBF is repetitively avalanche rated with I_AR = -3.6 A and E_AR = 4.2 mJ per pulse, and single-pulse avalanche energy E_AS = 310 mJ. These ratings are validated per test condition: V_DD = -50 V, starting T_J = 25 °C, L = 35 mH, R_g = 25 Ω. Avalanche operation must remain within pulse width and duty cycle limits defined in Figure 11 to avoid exceeding T_J(max) = 150 °C.

What is the gate threshold voltage range for IRFR9220TRRPBF, and how does it affect drive requirements?

The IRFR9220TRRPBF has a gate-source threshold voltage V_GS(th) ranging from -2.0 V to -4.0 V at I_D = -250 μA. This means reliable turn-on requires V_GS ≤ -4.0 V, and full enhancement (R_DS(on) = 1.5 Ω) is achieved at V_GS = -10 V. Logic-level compatibility is not supported; a dedicated negative gate driver or level-shifter is required for microcontroller interfacing.

Can IRFR9220TRRPBF be used in surface-mount reflow processes, and what are the peak temperature limits?

Yes, the IRFR9220TRRPBF in DPAK (TO-252) package is qualified for surface-mount assembly using vapor-phase, infrared, or wave soldering. Per Vishay's Package Information document 71197, the peak reflow temperature is 260 °C for 10 seconds. The device complies with JEDEC J-STD-020 moisture sensitivity level (MSL) 1, meaning no dry-bake preconditioning is required prior to reflow.

How does the body diode performance of IRFR9220TRRPBF impact its use in synchronous rectification?

The IRFR9220TRRPBF body diode exhibits V_SD = -6.3 V at I_S = -3.6 A and T_J = 25 °C, with t_rr = 150–300 ns and Q_rr = 0.97–2.0 μC. While usable for freewheeling, its relatively high forward voltage and moderate recovery speed make it less optimal than dedicated Schottky or silicon carbide diodes in high-efficiency synchronous rectifiers; it is best applied in non-synchronous or low-duty-cycle freewheeling roles.

IRFR9220TRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 340 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR9220TRRPBF FAQ

1.How can I place an order for IRFR9220TRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9220TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9220TRRPBF reliable?

The price and inventory of IRFR9220TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9220TRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR9220TRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9220TRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9220TRRPBF?

IRFR9220TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9220TRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9220TRRPBF?

For technical support, including IRFR9220TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9220TRRPBF requirements.

6.How does Aetrix verify that IRFR9220TRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR9220TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9220TRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR9220TRRPBF?

All IRFR9220TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9220TRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9220TRRPBF part is unused and in its original packaging.

Return procedure for IRFR9220TRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …