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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR9310

Name: IRFR9310
Brand: Vishay Siliconix
SKU: IRFR9310
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR9310

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9310.pdf

Description:: MOSFET P-CH 400V 1.8A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR9310 from Vishay Siliconix is a surface-mount P-channel enhancement-mode power MOSFET in DPAK (TO-252) package, rated for -400 V drain-source voltage, 7.0 Ω R_DS(on) at V_GS = -10 V, and -1.8 A continuous drain current at T_C = 25 °C. It features fully avalanche-rated ruggedness, fast switching (t_d(on) = 11 ns), and integrated body diode with 170–260 ns reverse recovery time - used in high-voltage DC-DC converters and industrial motor control circuits.

For engineers reviewing the IRFR9310 datasheet, IRFR9310 pinout, IRFR9310 application, or IRFR9310 equivalent, key selection criteria include its -400 V blocking capability, DPAK thermal performance (R_thJC = 2.5 °C/W), gate charge profile (Q_g = 13 nC), and avalanche energy rating (E_AS = 92 mJ).

Technical Context

This device employs third-generation silicon process technology to achieve low on-resistance per die area while maintaining high-voltage robustness. Its P-channel topology enables high-side switching without level-shifting circuitry in buck or flyback topologies.

The MOSFET integrates a fast-recovery body diode (t_rr ≤ 260 ns, Q_rr ≤ 960 nC) and supports unclamped inductive switching with repetitive avalanche current I_AR = -1.8 A and single-pulse E_AS = 92 mJ under defined test conditions (L = 57 mH, R_g = 25 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-400 V - supports high-voltage DC bus applications up to 400 V reverse polarity
R_DS(on)	7.0 Ω @ V_GS = -10 V - defines conduction loss in linear or saturated switching regions
I_D (continuous)	-1.8 A @ T_C = 25 °C - maximum steady-state current with heatsink at case temperature
Q_g	13 nC - total gate charge determining drive strength and switching speed trade-off
E_AS	92 mJ - single-pulse avalanche energy tolerance enabling inductive load handling without snubbers
t_r/t_f	10 ns / 24 ns - rise/fall times defining minimum PWM frequency and EMI behavior
R_thJC	2.5 °C/W - junction-to-case thermal resistance enabling direct heatsink mounting for power dissipation

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction and mechanical stability; lead-free and halogen-free compliant (GE3 suffix variants).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of P-channel MOSFET	Reference node for gate drive; connects to positive rail in high-side switch configuration
Pin 2 (Gate)	Control electrode	Receives negative gate voltage relative to source to turn on; threshold V_GS(th) = -2.0 to -4.0 V
Pin 3 (Drain)	Power output terminal	Exposed metal pad on underside - electrically and thermally connected to drain; must be soldered to PCB copper pour

Key Features

Feature	Design Value
Fully avalanche rated	92 mJ single-pulse and 5.0 mJ repetitive avalanche energy enable reliable operation under inductive fault conditions
Surface-mount DPAK	TO-252 outline with thermal pad allows >1.5 W power dissipation in standard PCB layouts using vapor-phase reflow
P-channel architecture	Eliminates need for high-side gate driver ICs in buck regulators and reverse-polarity protection circuits
Fast switching	11 ns turn-on delay and 24 ns fall time support >100 kHz switching frequencies with reduced dynamic losses
Low gate leakage	±100 nA I_GSS at ±20 V ensures stable gate bias in high-impedance drive networks

Applications

High-Voltage DC-DC Converter	Reverse Polarity Protection
Use Scenario: Isolated flyback converter operating from 300–400 V DC input in telecom power supplies. IC Role / Device Role / Timing Role: Primary-side P-channel MOSFET switch controlling energy transfer to secondary winding. Use Value: -400 V V_DS rating ensures margin against reflected voltage spikes; 92 mJ E_AS withstands transformer leakage inductance energy.	Use Scenario: Input protection for industrial PLC modules powered from 24–48 V DC field wiring. IC Role / Device Role / Timing Role: High-side series switch that blocks reverse-connected supply before system power-up. Use Value: P-channel topology enables simple gate control referenced to input rail; -1.8 A I_D supports typical PLC module loads.
Motor Control (Braking)	AC/DC Front-End Clamping
Use Scenario: Regenerative braking circuit in 24–48 V brushed DC motor drives. IC Role / Device Role / Timing Role: Synchronous freewheeling switch replacing flyback diode to reduce conduction loss during current recirculation. Use Value: Body diode V_SD = -4.0 V at -1.1 A enables lower forward drop than discrete Schottky; fast t_rr minimizes shoot-through risk.	Use Scenario: Overvoltage clamp in offline AC/DC power supplies with bulk capacitor charging transients. IC Role / Device Role / Timing Role: Avalanche-rated switch absorbing line surge energy into drain capacitance and RCD network. Use Value: Fully rated -400 V blocking and 92 mJ E_AS allow direct integration into clamping paths without external TVS diodes.

High-Voltage DC-DC Converter

Reverse Polarity Protection

Use Scenario: Isolated flyback converter operating from 300–400 V DC input in telecom power supplies.

IC Role / Device Role / Timing Role: Primary-side P-channel MOSFET switch controlling energy transfer to secondary winding.

Use Value: -400 V V_DS rating ensures margin against reflected voltage spikes; 92 mJ E_AS withstands transformer leakage inductance energy.

Use Scenario: Input protection for industrial PLC modules powered from 24–48 V DC field wiring.

IC Role / Device Role / Timing Role: High-side series switch that blocks reverse-connected supply before system power-up.

Use Value: P-channel topology enables simple gate control referenced to input rail; -1.8 A I_D supports typical PLC module loads.

Motor Control (Braking)

AC/DC Front-End Clamping

Use Scenario: Regenerative braking circuit in 24–48 V brushed DC motor drives.

IC Role / Device Role / Timing Role: Synchronous freewheeling switch replacing flyback diode to reduce conduction loss during current recirculation.

Use Value: Body diode V_SD = -4.0 V at -1.1 A enables lower forward drop than discrete Schottky; fast t_rr minimizes shoot-through risk.

Use Scenario: Overvoltage clamp in offline AC/DC power supplies with bulk capacitor charging transients.

IC Role / Device Role / Timing Role: Avalanche-rated switch absorbing line surge energy into drain capacitance and RCD network.

Use Value: Fully rated -400 V blocking and 92 mJ E_AS allow direct integration into clamping paths without external TVS diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHFR9310-GE3	Same silicon die and DPAK package; Pb-free/halogen-free construction with GE3 suffix	Identical electrical specs and thermal performance; preferred for RoHS-compliant production	Select SiHFR9310-GE3 when lead-free compliance is required; IRFR9310 remains valid for legacy Pb-based assembly.
IRFU9310PbF	Same die but IPAK (TO-251) through-hole package; identical V_DS, R_DS(on), and Q_g	Suitable for prototyping or low-volume boards where wave soldering is used; lacks thermal pad for heatsinking	Choose IRFU9310PbF only when through-hole mounting is mandatory; IRFR9310 offers superior thermal management in DPAK.

Compared with IRFR9310, SiHFR9310-GE3 provides identical performance with enhanced environmental compliance, while IRFU9310PbF trades thermal efficiency for through-hole assembly flexibility - neither is pin-compatible due to differing package footprints and thermal pad presence.

Availability

IRFR9310 is available at Aetrix Electronics and suitable for high-voltage DC-DC converters, reverse polarity protection circuits, and motor braking systems requiring stable component supply across extended production lifecycles.

Supply support for IRFR9310 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The IRFR9310 belongs to Vishay's third-generation high-voltage P-channel MOSFET product line, engineered for industrial power conversion, protection, and control applications demanding avalanche tolerance and surface-mount thermal performance.

FAQ

What is the maximum continuous drain current rating for IRFR9310 at 100 °C case temperature?

The IRFR9310 has a continuous drain current rating of -1.1 A at T_C = 100 °C, reflecting thermal derating from its -1.8 A rating at 25 °C. This value is critical for thermal design validation in enclosed or high-ambient environments. The linear derating factor is 0.40 W/°C, allowing interpolation for intermediate temperatures. Always verify actual junction temperature using R_thJC = 2.5 °C/W and measured case temperature in final layout.

Does IRFR9310 require a gate driver IC for operation in a 200 kHz switching application?

IRFR9310 can operate at 200 kHz with appropriate gate drive, but a dedicated gate driver IC is recommended. Its 13 nC total gate charge demands sufficient peak current (≥1 A) to achieve fast transitions; driving directly from a microcontroller GPIO risks slow edges and increased switching losses. The IRFR9310 gate threshold range (-2.0 to -4.0 V) also requires stable negative bias generation, which most MCUs lack - making an isolated or level-shifted driver essential for reliable high-frequency use.

Can IRFR9310 be used in parallel configurations to increase current handling?

Parallel operation of IRFR9310 devices is not recommended without individual gate resistors and careful layout. Its negative temperature coefficient for R_DS(on) (normalized curve shows increasing resistance with temperature) does not inherently balance current, and mismatched parasitic inductances in DPAK leads can cause dynamic current imbalance. For higher current needs, select a single higher-rated MOSFET or consult Vishay Application Note AN826 for validated paralleling guidelines specific to this device family.

What is the significance of the "fully avalanche rated" specification for IRFR9310?

"Fully avalanche rated" means IRFR9310 is characterized and guaranteed to survive single-pulse avalanche events up to 92 mJ and repetitive events up to 5.0 mJ under specified test conditions (L = 57 mH, R_g = 25 Ω). This rating validates its ability to absorb inductive energy without failure - critical in relay drivers, solenoid controls, and flyback converters where voltage spikes exceed V_DS. It is not a continuous operating mode but a fault-tolerance specification confirmed by production testing.

Is the IRFR9310 compatible with lead-free reflow soldering processes?

Yes, IRFR9310 is qualified for lead-free reflow soldering with peak temperature up to 300 °C for 10 seconds, per Vishay's soldering recommendations. Its DPAK (TO-252) package is designed for vapor-phase, infrared, or wave soldering. Ensure PCB pad layout follows Vishay Application Note 826 for minimum copper area (e.g., 0.224" × 0.420") to maintain thermal integrity and avoid voiding under the drain pad during reflow. Standard Pb-free SAC305 paste is compatible.

IRFR9310 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 1.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7Ohm @ 1.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR9310 FAQ

1.How can I place an order for IRFR9310 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9310 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9310 reliable?

The price and inventory of IRFR9310 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9310 is usually 5 days.

3.What payment methods are accepted for IRFR9310?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9310 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9310?

IRFR9310 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9310 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9310?

For technical support, including IRFR9310 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9310 requirements.

6.How does Aetrix verify that IRFR9310 is sourced from the original manufacturer or authorized distributors?

All IRFR9310 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9310 meets industry standards.

7.What is the process for return or replacement of IRFR9310?

All IRFR9310 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9310, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9310 part is unused and in its original packaging.

Return procedure for IRFR9310:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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