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Vishay Siliconix IRFR9310PBF
- Part No.:
- IRFR9310PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9310PBF.pdf
- Description:
- MOSFET P-CH 400V 1.8A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,013
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Product details
Overview
IRFR9310PBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -400 V drain-source voltage, 7.0 Ω RDS(on) at VGS = -10 V, and -1.8 A continuous drain current at TC = 25 °C. It serves as a high-voltage, low-current switching element in offline AC-DC power supplies, relay replacement circuits, and industrial motor control snubbers.
For engineers reviewing the IRFR9310PBF datasheet, IRFR9310PBF pinout, IRFR9310PBF application, or IRFR9310PBF equivalent, key selection criteria include its fully avalanche-rated capability (EAS = 92 mJ), fast switching performance (td(on) = 11 ns, tf = 24 ns), -4.0 V body diode forward voltage at -1.1 A, and suitability for high-reliability, high-voltage DC blocking in non-isolated topologies.
Technical Context
This device employs third-generation silicon processing to achieve low on-resistance per die area while maintaining ruggedness against unclamped inductive switching stress. Its gate threshold voltage range of -2.0 V to -4.0 V ensures reliable turn-on with standard -10 V gate drive and supports partial logic-level compatibility down to -5 V.
The integrated body diode exhibits trr = 170–260 ns and Qrr = 640–960 nC under specified conditions, enabling use in freewheeling paths where controlled reverse recovery is required. Thermal resistance RthJC = 2.5 °C/W allows 50 W power dissipation at TC = 25 °C, with linear derating above 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -400 V - Withstands full mains-derived DC bus voltages up to 340 V with margin for transients |
| RDS(on) | 7.0 Ω @ VGS = -10 V - Enables <1.2 W conduction loss at -1.1 A, suitable for low-duty-cycle HV switching |
| ID (cont.) | -1.8 A @ TC = 25 °C - Supports discrete HV load switching in space-constrained PCB layouts |
| EAS | 92 mJ - Fully rated for single-pulse avalanche energy, eliminating need for external clamping in inductive loads |
| Qg | 13 nC - Low gate charge enables efficient driving from standard gate drivers without excessive power loss |
| tf | 24 ns - Fast fall time reduces switching losses during turn-off in high-frequency HV applications |
| VSD | -4.0 V @ IS = -1.1 A - Predictable body diode forward drop aids snubber design and flyback path analysis |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad on bottom side for thermal conduction; three-terminal configuration optimized for high-voltage PCB layout isolation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connects to system ground or negative rail in high-side switch configurations |
| Pin 2 (Gate) | Control input (G) | High-impedance MOSFET gate requiring ≤ ±20 V rating; driven by isolated or level-shifted gate driver |
| Pin 3 (Drain) | Power output (D) | Exposed metal pad on underside - electrically and thermally connected to drain; must be routed with HV clearance |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 92 mJ single-pulse EAS validated per JEDEC JESD24-1 - eliminates external TVS/clamp in relay-replacement and solenoid drive |
| P-channel high-voltage architecture | -400 V VDS with -1.8 A ID - enables direct high-side switching of negative rails without level-shifting complexity |
| Low RDS(on) per voltage class | 7.0 Ω at -10 V drive - minimizes conduction loss in intermittent HV loads such as HVAC valve actuators |
| Fast switching with low Qg | 13 nC total gate charge and 24 ns fall time - supports >100 kHz operation in resonant converters and soft-switched topologies |
| Robust body diode | trr = 170–260 ns, Qrr = 640–960 nC - provides predictable reverse recovery behavior in freewheeling and synchronous rectification roles |
Applications
| AC-DC Auxiliary Power Supply | Industrial Relay Replacement |
|---|---|
Use Scenario: Providing isolated bias supply for gate drivers in offline SMPS using flyback topology with primary-side regulation. IC Role / Device Role / Timing Role: High-voltage P-channel switch controlling primary-side current in discontinuous conduction mode (DCM) flyback. Use Value: -400 V rating accommodates reflected output voltage plus leakage spike; 92 mJ avalanche rating prevents failure during transformer saturation events. | Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller (PLC) output modules driving 24 V DC solenoids. IC Role / Device Role / Timing Role: High-side switch isolating field devices from controller logic; operates in on/off mode with <100 ms duty cycle. Use Value: Fully avalanche-rated operation absorbs inductive kickback without snubber components; DPAK footprint simplifies thermal management vs. through-hole alternatives. |
| Motor Control Snubber Network | High-Voltage DC Bus Protection |
Use Scenario: Clamp circuit in brushed DC motor H-bridge to suppress voltage spikes during PWM commutation. IC Role / Device Role / Timing Role: Passive snubber switch conducting only during transient overvoltage events; triggered by voltage exceeding -400 V. Use Value: Confirmed 92 mJ single-pulse avalanche energy handles worst-case inductive energy dump; -4.0 V VSD enables precise clamp voltage setting. | Use Scenario: Overvoltage crowbar protection in telecom power systems monitoring +48 V DC distribution bus. IC Role / Device Role / Timing Role: High-side disconnect switch activated by supervisor IC upon detection of >60 V bus overvoltage condition. Use Value: -400 V VDS provides 6.7× safety margin over 60 V trip point; DPAK thermal pad enables rapid heat dissipation during fault conduction. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFU9310PbF | Same silicon die, IPAK (TO-251) through-hole package; RthJA = 50 °C/W (PCB mount) vs. 110 °C/W for IRFR9310PBF | Better thermal performance in through-hole designs with copper pour; requires wave soldering instead of reflow | Select when board assembly uses through-hole process or higher steady-state power dissipation is needed with heatsink mounting |
| SiHFR9310-GE3 | Identical DPAK package and electrical specs; lead-free/halogen-free construction per RoHS; same -400 V/-1.8 A/-7.0 Ω ratings | No functional difference; qualified for automotive-grade temperature cycling and moisture sensitivity level 1 (MSL1) | Select for RoHS-compliant production or automotive-qualified supply chain requirements; pinout and footprint identical to IRFR9310PBF |
Compared with IRFR9310PBF, IRFU9310PbF offers superior thermal resistance in through-hole mounting but lacks surface-mount compatibility, while SiHFR9310-GE3 delivers identical electrical and mechanical performance with enhanced environmental compliance and reliability qualification - making it a drop-in replacement for new designs requiring RoHS/automotive traceability.
Availability
IRFR9310PBF is available at Aetrix Electronics and suitable for AC-DC auxiliary power supplies, industrial relay replacement modules, and motor control snubber networks requiring stable component supply across extended product lifecycles.
Supply support for IRFR9310PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.
The IRFR9310PBF belongs to Vishay's third-generation high-voltage P-channel MOSFET family, engineered for robust unclamped inductive switching and high-voltage DC blocking in industrial and power conversion systems.
FAQ
What is the maximum gate-source voltage rating for IRFR9310PBF?
The IRFR9310PBF has a maximum gate-source voltage rating of ±20 V, as specified in its Absolute Maximum Ratings table. Exceeding this limit risks permanent gate oxide damage. For reliable operation, gate drive circuits should be designed to clamp VGS within this range - especially during fast switching transitions where ringing may cause overshoot. The IRFR9310PBF datasheet confirms this rating applies across the full operating temperature range.
Does IRFR9310PBF require a heatsink in typical applications?
The IRFR9310PBF can dissipate up to 50 W at TC = 25 °C with an RthJC of 2.5 °C/W, but real-world PCB-mounted thermal performance depends on copper area and airflow. In most applications drawing ≤1.1 A continuously, the DPAK's exposed drain pad soldered to ≥1 in² FR-4 copper achieves sufficient cooling without an external heatsink. However, sustained operation above 1 A or ambient temperatures >50 °C warrants thermal evaluation using the IRFR9310PBF's RthJA = 50 °C/W (PCB mount) value.
Can IRFR9310PBF be used as a direct replacement for IRFU9310PbF?
No - IRFR9310PBF and IRFU9310PbF share identical silicon characteristics but differ in package: IRFR9310PBF uses DPAK (TO-252) surface-mount, while IRFU9310PbF uses IPAK (TO-251) through-hole. Their footprints, soldering processes, and thermal mounting methods are incompatible. Though electrically interchangeable in circuit simulation, physical replacement requires PCB redesign. The IRFR9310PBF cannot be substituted into an IRFU9310PbF footprint without mechanical modification.
What is the body diode forward voltage of IRFR9310PBF at -1.1 A?
The body diode forward voltage (VSD) of the IRFR9310PBF is -4.0 V at IS = -1.1 A and TJ = 25 °C, as measured with VGS = 0 V. This parameter is critical for estimating conduction loss in freewheeling paths and designing snubber networks. The IRFR9310PBF datasheet specifies this value in the Drain-Source Body Diode Characteristics table and confirms it remains stable up to TJ = 150 °C.
Is IRFR9310PBF suitable for logic-level gate drive?
The IRFR9310PBF is not a logic-level MOSFET; its gate threshold voltage (VGS(th)) ranges from -2.0 V to -4.0 V, and RDS(on) is specified at VGS = -10 V. While it may partially turn on with -5 V drive, full enhancement requires -10 V to achieve the rated 7.0 Ω on-resistance. Using logic-level gate drive (e.g., 3.3 V or 5 V) results in significantly higher RDS(on) and unacceptable conduction losses. The IRFR9310PBF must be driven with a dedicated -10 V supply or level-shifted gate driver.
IRFR9310PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 270 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR9310PBF FAQ
1.How can I place an order for IRFR9310PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9310PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9310PBF reliable?
The price and inventory of IRFR9310PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9310PBF is usually 5 days.
3.What payment methods are accepted for IRFR9310PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9310PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9310PBF?
IRFR9310PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9310PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9310PBF?
For technical support, including IRFR9310PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9310PBF requirements.
6.How does Aetrix verify that IRFR9310PBF is sourced from the original manufacturer or authorized distributors?
All IRFR9310PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9310PBF meets industry standards.
7.What is the process for return or replacement of IRFR9310PBF?
All IRFR9310PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9310PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9310PBF part is unused and in its original packaging.
Return procedure for IRFR9310PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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