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Vishay Siliconix IRFR9310TR
- Part No.:
- IRFR9310TR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9310TR.pdf
- Description:
- MOSFET P-CH 400V 1.8A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,149
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Product details
Overview
IRFR9310TR from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -400 V drain-source voltage, 7.0 Ω RDS(on) at VGS = -10 V, and -1.8 A continuous drain current at TC = 25 °C. It delivers fully avalanche-rated ruggedness and fast switching for high-voltage DC-DC converters, industrial motor controls, and solid-state relay replacements.
For engineers reviewing the IRFR9310TR datasheet, IRFR9310TR pinout, IRFR9310TR application, or IRFR9310TR equivalent, key selection criteria include its -400 V blocking capability, low gate charge (13 nC), body diode recovery time (170–260 ns), thermal resistance (RthJC = 2.5 °C/W), and DPAK footprint compatibility with automated SMT assembly.
Technical Context
This third-generation Vishay power MOSFET uses advanced silicon processing to achieve low on-resistance per die area while maintaining robust avalanche energy rating (EAS = 92 mJ). Its P-channel topology enables high-side switching without level-shifting circuitry in buck regulators and offline power supplies.
The device integrates a fast-recovery body diode (trr = 170–260 ns, Qrr = 640–960 nC) and exhibits stable gate threshold voltage (-2.0 to -4.0 V) across temperature. Dynamic parameters-including Ciss = 270 pF, Coss = 50 pF, and Crss = 8.0 pF-are specified at VDS = -25 V, enabling accurate snubber and gate drive design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -400 V - Supports primary-side switching in 380 V DC bus and 277 V AC line-powered systems |
| RDS(on) | 7.0 Ω @ VGS = -10 V - Enables <1.1 A continuous conduction with ≤7.7 W conduction loss at TC = 25 °C |
| Qg | 13 nC - Determines gate driver current requirement (~13 mA avg. for 1 MHz switching with 1 kΩ gate resistor) |
| EAS | 92 mJ - Allows unclamped inductive switching without failure under IAS = -1.8 A, L = 57 mH conditions |
| tr/tf | 10 ns / 24 ns - Supports >500 kHz hard-switching in flyback and forward topologies with minimal switching loss |
| RthJC | 2.5 °C/W - Enables 50 W power dissipation with ≤125 °C junction rise above 25 °C case temperature |
| VGS(th) | -2.0 to -4.0 V - Ensures reliable turn-on with standard -10 V gate drive while rejecting noise up to ±20 V |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction and mechanical stability. Dimensions conform to JEDEC TO-252AA outline (Version 1: facility code Y; Version 2: facility code N), including 6.35–6.73 mm E width and 9.40–10.41 mm H height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connects to load return or ground in high-side switch configurations |
| Pin 2 (Gate) | Control input (G) | High-impedance MOSFET control node requiring <100 nA leakage current handling and 13 nC total charge delivery |
| Pin 3 (Drain) | Power output (D) | High-voltage switched node; thermally bonded to PCB copper pour via exposed backside metal pad |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 92 mJ single-pulse EAS enables robust operation in inductive load switching without external clamping |
| P-channel topology | Eliminates need for bootstrap circuitry or isolated gate drivers in high-side switch applications |
| Low RDS(on) × Qg figure of merit | 91 Ω·nC - Balances conduction and switching losses for optimized efficiency in 100–500 kHz SMPS |
| Fast body diode recovery | trr = 170–260 ns with Qrr = 640–960 nC reduces cross-conduction loss and EMI in synchronous rectification |
| Surface-mount DPAK package | Compatible with vapor-phase and infrared reflow; supports >1.5 W power dissipation on FR-4 PCBs |
Applications
| Industrial Motor Control | AC-DC Power Supply |
|---|---|
|
Use Scenario: High-side switching in 3-phase inverter half-bridge legs for 24–48 V BLDC motor drives. IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled current path from bus to phase winding during upper-arm conduction. Use Value: -400 V rating accommodates 2× bus voltage spikes; 7.0 Ω RDS(on) limits I²R loss to <2.3 W at 1.8 A peak. |
Use Scenario: Primary-side active clamp or auxiliary supply switch in 277 V AC-input offline flyback converters. IC Role / Device Role / Timing Role: High-voltage P-channel switch controlling energy transfer timing and clamping waveform shape. Use Value: 92 mJ EAS withstands transformer leakage inductance energy without snubber; 13 nC Qg enables clean 200 kHz switching. |
| Solid-State Relay Replacement | DC-DC Converter |
|
Use Scenario: Replacing electromechanical relays in programmable logic controller (PLC) output modules handling 24–48 V DC loads. IC Role / Device Role / Timing Role: Voltage-controlled solid-state switch replacing mechanical contacts with microsecond response and zero bounce. Use Value: Fully avalanche-rated operation ensures reliability under inductive load turn-off; -400 V VDS provides 2× safety margin over 240 V system max. |
Use Scenario: Synchronous rectifier or high-side switch in isolated 48 V to 12 V DC-DC converters for telecom infrastructure. IC Role / Device Role / Timing Role: P-channel MOSFET operating as secondary-side synchronous rectifier or primary-side high-side switch. Use Value: Fast 10 ns rise time minimizes dead-time loss; body diode trr < 260 ns prevents reverse recovery shoot-through in synchronous operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiHFR9310TR-GE3 | Same silicon die, identical VDS, RDS(on), Qg, and avalanche rating; Pb-free/halogen-free packaging per JEDEC J-STD-609A Class 2a | No functional difference; qualified for RoHS-compliant and green-chemistry manufacturing lines | Select when lead-free compliance and halogen-free material declaration are required by OEM procurement policy |
| IRFU9310PbF | Identical electrical specs but IPAK (TO-251) through-hole package; RthJC = 2.5 °C/W same, but RthJA higher due to leadframe thermal path | Requires wave soldering and manual assembly; unsuitable for high-density SMT production | Choose only for legacy through-hole designs or prototyping where DPAK reflow is unavailable |
Compared with IRFR9310TR, SiHFR9310TR-GE3 offers identical performance with enhanced environmental compliance, while IRFU9310PbF trades SMT scalability for through-hole serviceability-neither is pin-compatible due to differing package footprints and mounting methods.
Availability
IRFR9310TR is available at Aetrix Electronics and suitable for industrial motor control, AC-DC power supply, and solid-state relay replacement requiring stable component supply, long-term lifecycle support, and traceable sourcing from Vishay-authorized channels.
Supply support for IRFR9310TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with vertical manufacturing and rigorous reliability testing.
The IRFR9310TR belongs to Vishay's third-generation high-voltage P-channel MOSFET product line, engineered for ruggedness in industrial power conversion, motor drives, and solid-state switching where avalanche tolerance and thermal stability are critical.
FAQ
What is the maximum continuous drain current for IRFR9310TR at 100 °C case temperature?
The IRFR9310TR supports -1.1 A continuous drain current at TC = 100 °C, derated linearly from -1.8 A at 25 °C using a 0.40 W/°C factor. This value is confirmed in the Absolute Maximum Ratings table of Vishay document 91284, and reflects thermal limitation-not silicon current capability-under sustained PCB-mounted operation.
Does IRFR9310TR have a built-in body diode, and what are its key parameters?
Yes, the IRFR9310TR integrates a parasitic body diode inherent to its vertical P-channel MOSFET structure. Key parameters include -1.9 A continuous source-drain current (IS), -7.6 A pulsed rating (ISM), -4.0 V forward voltage (VSD) at -1.1 A and 25 °C, and 170–260 ns reverse recovery time (trr) with 640–960 nC recovered charge (Qrr), all specified in the Drain-Source Body Diode Characteristics section.
Can IRFR9310TR be used with logic-level gate drive (e.g., 3.3 V or 5 V)?
No-IRFR9310TR is not a logic-level MOSFET. Its gate threshold voltage range is -2.0 V to -4.0 V, and RDS(on) is specified only at VGS = -10 V. At VGS = -5 V, RDS(on) increases significantly (not characterized in datasheet), resulting in excessive conduction loss. A dedicated gate driver delivering -10 V to -15 V is required for full enhancement.
What is the thermal resistance from junction to case (RthJC) for IRFR9310TR, and how is it measured?
The IRFR9310TR has a maximum junction-to-case (drain) thermal resistance of 2.5 °C/W, measured between the silicon die and the exposed drain pad on the DPAK package bottom. This value assumes proper soldering to a minimum 1" square copper area on FR-4 PCB, as defined in the Thermal Resistance Ratings table of Vishay document 91284.
Is IRFR9310TR suitable for avalanche energy handling in unclamped inductive switching?
Yes-the IRFR9310TR is fully avalanche rated with 92 mJ single-pulse avalanche energy (EAS) and 5.0 mJ repetitive avalanche energy (EAR). These values are validated per test condition: L = 57 mH, IAS = -1.8 A, Rg = 25 Ω, starting TJ = 25 °C. Operation within these limits avoids permanent degradation during transient overloads.
IRFR9310TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 270 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR9310TR FAQ
1.How can I place an order for IRFR9310TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9310TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9310TR reliable?
The price and inventory of IRFR9310TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9310TR is usually 5 days.
3.What payment methods are accepted for IRFR9310TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9310TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9310TR?
IRFR9310TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9310TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9310TR?
For technical support, including IRFR9310TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9310TR requirements.
6.How does Aetrix verify that IRFR9310TR is sourced from the original manufacturer or authorized distributors?
All IRFR9310TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9310TR meets industry standards.
7.What is the process for return or replacement of IRFR9310TR?
All IRFR9310TR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9310TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9310TR part is unused and in its original packaging.
Return procedure for IRFR9310TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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