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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR9310TRL

Name: IRFR9310TRL
Brand: Vishay Siliconix
SKU: IRFR9310TRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR9310TRL

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9310TRL.pdf

Description:: MOSFET P-CH 400V 1.8A DPAK

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Product details

Overview

IRFR9310TRL from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -400 V drain-source voltage, 7.0 Ω R_DS(on) at V_GS = -10 V, and -1.8 A continuous drain current at T_C = 25 °C. It delivers fast switching, fully avalanche-rated ruggedness, and is optimized for high-voltage DC-DC converters and industrial motor control.

For engineers reviewing the IRFR9310TRL datasheet, IRFR9310TRL pinout, IRFR9310TRL application, or IRFR9310TRL equivalent, key selection criteria include its -400 V blocking capability, low gate charge (13 nC), body diode recovery performance (trr ≤ 260 ns), thermal resistance (R_thJC = 2.5 °C/W), and DPAK footprint compatibility with automated SMT assembly.

Technical Context

This device employs third-generation silicon processing to achieve low on-resistance per die area while maintaining robust avalanche energy rating (E_AS = 92 mJ). Its P-channel topology enables high-side switching without level-shifting circuitry in buck or linear regulator topologies.

The MOSFET features a fully characterized body diode with V_SD = -4.0 V at I_S = -1.1 A and Q_rr = 640–960 nC, supporting synchronous rectification and flyback snubberless designs where controlled reverse recovery is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-400 V - Supports high-voltage DC bus isolation up to 400 V reverse polarity in industrial power supplies.
R_DS(on)	7.0 Ω @ V_GS = -10 V - Enables low conduction loss in low-current, high-voltage switching nodes (e.g., <2 A loads).
Q_g	13 nC - Reduces gate drive power requirement and supports >100 kHz switching in isolated gate driver circuits.
I_D (continuous)	-1.8 A @ T_C = 25 °C - Suitable for thermally constrained PCB layouts with limited copper area or heatsinking.
E_AS	92 mJ - Withstands unclamped inductive switching events in relay drivers or solenoid controls without failure.
R_thJC	2.5 °C/W - Allows direct thermal coupling to external heatsinks via the exposed drain pad for power dissipation up to 50 W.
trr	170–260 ns - Limits voltage overshoot during diode commutation in flyback and forward converters.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad on bottom side for thermal conduction; three-terminal configuration optimized for high-voltage, low-current switching applications.

Pin/Terminal	Circuit Role	Design Meaning
Tab / Drain (D)	Main current-carrying terminal, electrically connected to exposed metal pad	Primary heat path to PCB copper pour or heatsink; must be soldered to ≥1"² FR-4 ground plane for rated R_thJA = 50 °C/W.
Lead 1 / Source (S)	Reference node for gate drive and load return path	Connects to system ground or negative rail; defines V_GS reference for P-channel operation.
Lead 2 / Gate (G)	Control electrode for channel formation	Requires negative V_GS (≤ -2.0 V threshold) to turn on; sensitive to ESD-must be protected with series resistor and clamping diode.

Key Features

Feature	Design Value
Fully avalanche rated	Single-pulse E_AS = 92 mJ ensures survivability under inductive load turn-off without external snubbers.
Low R_DS(on) per voltage class	7.0 Ω at -400 V enables higher efficiency than legacy P-channel MOSFETs in same package (e.g., IRFR9120).
Fast body diode recovery	trr = 170–260 ns and Q_rr = 640–960 nC reduce switching losses in discontinuous conduction mode (DCM) flyback designs.
DPAK surface-mount compatibility	TO-252 outline supports vapor-phase and infrared reflow; recommended pad layout per AN826 ensures thermal reliability.
Pb-free and halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709C; no lead or brominated flame retardants in packaging materials.

Applications

High-Voltage DC-DC Converter	Industrial Relay Driver
Use Scenario: Step-down conversion from 380 V DC bus to 24 V auxiliary supply in factory automation PLCs. IC Role / Device Role / Timing Role: High-side P-channel switch controlling primary-side current in non-isolated buck topology. Use Value: -400 V V_DS rating eliminates need for series-connected MOSFETs; 7.0 Ω R_DS(on) limits conduction loss to <2.3 W at 1.8 A.	Use Scenario: Solid-state replacement for electromechanical relays driving 24 V/1 A solenoid valves in HVAC control panels. IC Role / Device Role / Timing Role: Low-duty-cycle, high-voltage switch with integrated avalanche energy handling. Use Value: 92 mJ E_AS absorbs inductive kickback without external TVS; DPAK footprint simplifies PCB layout vs. through-hole alternatives.
Linear Regulator Pass Element	Flyback Converter Secondary Switch
Use Scenario: Adjustable high-voltage linear regulator for analog sensor biasing in test equipment (0–300 V output). IC Role / Device Role / Timing Role: Series pass element operating in linear region with active thermal management. Use Value: R_thJC = 2.5 °C/W enables stable operation at 30 W dissipation with modest heatsinking; -400 V rating prevents breakdown during transient overvoltage.	Use Scenario: Active clamp switch in quasi-resonant flyback converter for LED street lighting (input 277 V AC). IC Role / Device Role / Timing Role: Synchronous rectifier replacement with controlled diode recovery timing. Use Value: trr ≤ 260 ns and Q_rr ≤ 960 nC minimize voltage spikes across primary winding; P-channel simplifies gate drive timing relative to N-channel + bootstrap.

High-Voltage DC-DC Converter

Industrial Relay Driver

Use Scenario: Step-down conversion from 380 V DC bus to 24 V auxiliary supply in factory automation PLCs.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling primary-side current in non-isolated buck topology.

Use Value: -400 V V_DS rating eliminates need for series-connected MOSFETs; 7.0 Ω R_DS(on) limits conduction loss to <2.3 W at 1.8 A.

Use Scenario: Solid-state replacement for electromechanical relays driving 24 V/1 A solenoid valves in HVAC control panels.

IC Role / Device Role / Timing Role: Low-duty-cycle, high-voltage switch with integrated avalanche energy handling.

Use Value: 92 mJ E_AS absorbs inductive kickback without external TVS; DPAK footprint simplifies PCB layout vs. through-hole alternatives.

Linear Regulator Pass Element

Flyback Converter Secondary Switch

Use Scenario: Adjustable high-voltage linear regulator for analog sensor biasing in test equipment (0–300 V output).

IC Role / Device Role / Timing Role: Series pass element operating in linear region with active thermal management.

Use Value: R_thJC = 2.5 °C/W enables stable operation at 30 W dissipation with modest heatsinking; -400 V rating prevents breakdown during transient overvoltage.

Use Scenario: Active clamp switch in quasi-resonant flyback converter for LED street lighting (input 277 V AC).

IC Role / Device Role / Timing Role: Synchronous rectifier replacement with controlled diode recovery timing.

Use Value: trr ≤ 260 ns and Q_rr ≤ 960 nC minimize voltage spikes across primary winding; P-channel simplifies gate drive timing relative to N-channel + bootstrap.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR9120TRPbF	-400 V V_DS, but higher R_DS(on) = 10.0 Ω @ -10 V; lower Q_g = 9.0 nC	Lower conduction loss not required; better for ultra-low gate drive power in battery-powered systems	Choose when gate drive current is severely limited and thermal margin allows higher R_DS(on).
SiHFR9310-GE3	Same silicon die and DPAK package; identical V_DS, R_DS(on), Q_g, and avalanche rating; Vishay's newer halogen-free variant	No functional difference; qualified to stricter material compliance standards (JEDEC JS709C)	Preferred for new designs requiring halogen-free certification; drop-in compatible with IRFR9310TRL in all electrical and mechanical respects.

Compared with IRFR9310TRL, IRFR9120TRPbF trades conduction efficiency for reduced gate drive burden, while SiHFR9310-GE3 offers identical performance with enhanced environmental compliance-making it the optimal upgrade path for RoHS/halogen-free production programs.

Availability

IRFR9310TRL is available at Aetrix Electronics and suitable for high-voltage DC-DC converters, industrial relay drivers, and linear regulator pass elements requiring stable component supply across extended product lifecycles.

Supply support for IRFR9310TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRFR9310TRL belongs to Vishay's third-generation high-voltage P-channel MOSFET family, engineered for industrial power conversion, motor control, and solid-state switching where avalanche robustness and surface-mount scalability are essential.

FAQ

What is the maximum junction temperature rating for IRFR9310TRL?

The IRFR9310TRL has an operating junction temperature range of -55 °C to +150 °C, as specified in the Absolute Maximum Ratings table. This allows reliable operation in harsh industrial environments, provided thermal design maintains T_J ≤ 150 °C under worst-case power dissipation and ambient conditions. Derating curves in Figure 8 confirm usable current down to T_C = 125 °C.

Does IRFR9310TRL require a negative gate drive voltage?

Yes, IRFR9310TRL is a P-channel MOSFET with a gate-source threshold voltage (V_GS(th)) ranging from -2.0 V to -4.0 V. To fully enhance the channel and achieve R_DS(on) = 7.0 Ω, a V_GS of -10 V is required. Driving the gate positive relative to the source will keep the device off; proper gate driver design must ensure negative swing relative to source potential.

Can IRFR9310TRL be used in avalanche mode repeatedly?

The IRFR9310TRL is rated for repetitive avalanche with I_AR = -1.8 A and E_AR = 5.0 mJ per pulse, subject to pulse width and duty cycle limits defined in the datasheet notes. While single-pulse E_AS = 92 mJ is guaranteed, repetitive use requires careful thermal management and adherence to the derating curve in Figure 11 to avoid cumulative junction temperature rise beyond 150 °C.

What is the recommended PCB pad layout for IRFR9310TRL in DPAK package?

Vishay Application Note AN826 specifies minimum recommended pads for DPAK (TO-252): 0.224" × 0.420" (5.69 mm × 10.67 mm) for the drain pad, with 0.055" (1.397 mm) clearance to adjacent traces. Thermal vias under the drain pad are strongly advised to improve heat transfer to internal layers. The IRFR9310TRL's R_thJA drops from 110 °C/W (no copper) to 50 °C/W with proper 1"² FR-4 mounting.

Is IRFR9310TRL pin-compatible with IRFU9310?

No, IRFR9310TRL is not pin-compatible with IRFU9310. IRFR9310TRL uses the DPAK (TO-252) surface-mount package with leads in G-S-D order (viewed from top, tab up), while IRFU9310 uses the IPAK (TO-251) through-hole package with straight leads and different pin spacing. Mechanical and soldering requirements differ significantly-PCB redesign is required for substitution.

IRFR9310TRL Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 1.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7Ohm @ 1.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR9310TRL FAQ

1.How can I place an order for IRFR9310TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9310TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9310TRL reliable?

The price and inventory of IRFR9310TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9310TRL is usually 5 days.

3.What payment methods are accepted for IRFR9310TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9310TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9310TRL?

IRFR9310TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9310TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9310TRL?

For technical support, including IRFR9310TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9310TRL requirements.

6.How does Aetrix verify that IRFR9310TRL is sourced from the original manufacturer or authorized distributors?

All IRFR9310TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9310TRL meets industry standards.

7.What is the process for return or replacement of IRFR9310TRL?

All IRFR9310TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9310TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9310TRL part is unused and in its original packaging.

Return procedure for IRFR9310TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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