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Vishay Siliconix IRFR9310TRLPBF
- Part No.:
- IRFR9310TRLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9310TRLPBF.pdf
- Description:
- MOSFET P-CH 400V 1.8A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:887
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Product details
Overview
IRFR9310TRLPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -400 V drain-source voltage, 7.0 Ω RDS(on) at VGS = -10 V, and -1.8 A continuous drain current at TC = 25 °C. It delivers fully avalanche-rated ruggedness and fast switching for high-voltage DC-DC converters, industrial motor controls, and solid-state relay replacements.
For engineers reviewing the IRFR9310TRLPBF datasheet, IRFR9310TRLPBF pinout, IRFR9310TRLPBF application, or IRFR9310TRLPBF equivalent, key selection criteria include its -400 V blocking capability, low gate charge (13 nC), body diode recovery time (170–260 ns), and thermal resistance (RthJC = 2.5 °C/W) for reliable high-voltage switching in constrained layouts.
Technical Context
This device employs third-generation trench-gate silicon process technology to achieve low on-resistance per die area while maintaining high-voltage robustness. Its P-channel architecture enables high-side switching without level-shifting circuitry in buck regulators and offline power supplies.
The MOSFET integrates a fast-recovery body diode with 640–960 nC reverse recovery charge and supports unclamped inductive switching up to 92 mJ single-pulse avalanche energy. Gate drive requirements are compatible with standard -10 V logic-level signals, with VGS(th) spanning -2.0 V to -4.0 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -400 V - Supports primary-side switching in 380 V DC bus and 230 V AC rectified applications |
| RDS(on) | 7.0 Ω @ VGS = -10 V - Enables <1.8 A continuous conduction with ≤12.6 W conduction loss at TC = 25 °C |
| Qg | 13 nC - Reduces gate drive power and enables >100 kHz switching in hard-switched topologies |
| EAS | 92 mJ - Withstands unclamped inductive energy in relay driver and solenoid control circuits |
| RthJC | 2.5 °C/W - Allows 50 W power dissipation with ≤125 °C junction rise above 25 °C case temperature |
| trr | 170–260 ns - Limits switching losses during body diode commutation in synchronous rectifier alternatives |
| ID (TC = 100 °C) | -1.1 A - Sustains operation in thermally limited PCB-mounted environments without forced cooling |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction; 3-terminal configuration optimized for automated assembly and high-power density layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab / Pin 2 (Drain) | Power output terminal / heat sink interface | Electrically connected to internal drain; soldered to large copper pour for thermal management and current return path |
| Pin 1 (Gate) | Control input | Receives negative gate drive relative to source; requires <13 nC charge for full enhancement; sensitive to ESD |
| Pin 3 (Source) | Reference node / current return | Serves as common reference for gate drive and load current; ties to system ground or floating rail in high-side configurations |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 92 mJ single-pulse and 5.0 mJ repetitive avalanche energy withstand - eliminates need for external snubbers in inductive load switching |
| P-channel topology | Enables high-side switch configuration without bootstrap or isolated gate drivers - simplifies power stage layout in buck and flyback controllers |
| Low Qgd/Qg ratio | 5.0/13 ≈ 38 % - improves hard-switching efficiency and reduces Miller-induced shoot-through risk in bridge circuits |
| Fast body diode recovery | trr = 170–260 ns with Qrr = 640–960 nC - minimizes reverse recovery losses when used as freewheeling element in non-synchronous topologies |
| Surface-mount DPAK | TO-252 outline with thermal pad - supports >1.5 W dissipation on FR-4 PCB and enables reflow-compatible manufacturing |
Applications
| Industrial Motor Control | High-Voltage DC-DC Converter |
|---|---|
Use Scenario: Driving 24–48 V brushed DC motors in programmable logic controller (PLC) I/O modules with overcurrent and thermal protection. IC Role / Device Role / Timing Role: High-side P-channel switch controlling motor phase voltage; operates in PWM mode at 1–20 kHz with dead-time managed by controller. Use Value: -400 V rating prevents breakdown during inductive kickback; RDS(on) = 7.0 Ω limits I²R loss to <23 mW at 60 mA standby current. | Use Scenario: Primary-side high-voltage switch in isolated 48 V to 380 V boost converter for telecom power systems. IC Role / Device Role / Timing Role: Main switching transistor in discontinuous conduction mode (DCM); handles peak currents up to -7.2 A with 300 μs pulse width limit. Use Value: 92 mJ EAS absorbs leakage inductance energy without clamping; 2.5 °C/W RthJC maintains TJ < 125 °C under 50 W pulsed load. |
| Solid-State Relay Replacement | AC Mains-Switched Lighting Control |
Use Scenario: Replacing electromechanical relays in HVAC zone dampers and industrial valve actuators requiring >100,000 cycle life. IC Role / Device Role / Timing Role: Bidirectional AC switch using back-to-back configuration; controlled via optocoupler-isolated gate driver. Use Value: Fully rated -400 V VDS blocks 277 V AC RMS with 2× safety margin; -1.8 A ID supports 15 A resistive loads with heatsinking. | Use Scenario: Dimmable LED driver front-end switch for 120/230 V AC mains-connected smart lighting fixtures. IC Role / Device Role / Timing Role: Input-stage switch in active PFC pre-regulator; commutates at 65 kHz with zero-voltage switching assistance. Use Value: Low Coss = 50 pF and Qgd = 5.0 nC reduce turn-off losses; dV/dt rating of -24 V/ns suppresses false triggering from line transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiHFR9310-GE3 | Same silicon die, identical VDS, RDS(on), Qg, and package; Pb-free/halogen-free construction per JEDEC J-STD-609 | No functional difference; qualified for RoHS-compliant and green-chemistry manufacturing lines | Select SiHFR9310-GE3 when lead-free compliance and halogen-free material declaration are mandatory per IPC-1752A. |
| IRFU9310PbF | IPAK (TO-251) through-hole variant; same electrical specs but higher RthJA (110 °C/W vs. 50 °C/W PCB mount) and no thermal pad | Suitable for prototyping, low-volume hand-soldered assemblies, or legacy through-hole board designs | Choose IRFU9310PbF only when DPAK reflow compatibility is unavailable and thermal budget allows ≥2× higher junction rise at same power. |
Compared with IRFR9310TRLPBF, SiHFR9310-GE3 offers identical performance with enhanced environmental compliance, while IRFU9310PbF trades surface-mount efficiency for through-hole manufacturability-neither is pin-compatible due to differing package footprints and thermal interfaces.
Availability
IRFR9310TRLPBF is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC conversion, and solid-state relay replacement requiring stable component supply across extended product lifecycles.
Supply support for IRFR9310TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with vertical manufacturing and reliability validation across multiple wafer fabs and assembly sites.
The IRFR9310TRLPBF belongs to Vishay's third-generation high-voltage P-channel power MOSFET family, engineered for ruggedness in industrial and automotive auxiliary power systems where avalanche energy handling and long-term parametric stability are critical.
FAQ
What is the maximum continuous drain current for IRFR9310TRLPBF at 100 °C case temperature?
The IRFR9310TRLPBF supports -1.1 A continuous drain current at TC = 100 °C, derated linearly from -1.8 A at 25 °C using a 0.40 W/°C factor. This value reflects thermal limitation of the DPAK package under typical PCB mounting conditions and must be validated against actual board layout and airflow in the target application.
Does IRFR9310TRLPBF require a negative gate drive voltage?
Yes, IRFR9310TRLPBF is a P-channel MOSFET and requires a gate voltage more negative than the source to turn on. Full enhancement occurs at VGS = -10 V, with threshold range of -2.0 V to -4.0 V. Driving the gate to 0 V (relative to source) turns the device off; applying +10 V would exceed ±20 V VGS absolute maximum rating and cause permanent damage.
Can IRFR9310TRLPBF be used in avalanche mode repeatedly?
Yes, IRFR9310TRLPBF is fully rated for repetitive avalanche operation with IAR = -1.8 A and EAR = 5.0 mJ per pulse. However, each event must respect pulse width and duty cycle limits (≤2 %) defined in Figure 11 of the datasheet, and junction temperature must remain below 150 °C to avoid cumulative degradation of the IRFR9310TRLPBF die.
What is the thermal resistance from junction to ambient for IRFR9310TRLPBF on a standard PCB?
When mounted on a 1" square FR-4 PCB, the IRFR9310TRLPBF exhibits RthJA = 50 °C/W. This value assumes no additional heatsinking and defines the worst-case thermal path for estimating junction temperature rise. For accurate design, use RthJC = 2.5 °C/W with measured case temperature and apply board-specific thermal modeling.
Is IRFR9310TRLPBF suitable for use as a synchronous rectifier?
No, IRFR9310TRLPBF is not optimized for synchronous rectification due to its relatively high RDS(on) (7.0 Ω) and slow body diode recovery (170–260 ns). Its design prioritizes high-voltage blocking and avalanche ruggedness over low-loss conduction. For synchronous rectifier applications, N-channel devices with sub-100 mΩ RDS(on) and nanosecond trr-not the IRFR9310TRLPBF-are recommended.
IRFR9310TRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 270 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR9310TRLPBF FAQ
1.How can I place an order for IRFR9310TRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9310TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9310TRLPBF reliable?
The price and inventory of IRFR9310TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9310TRLPBF is usually 5 days.
3.What payment methods are accepted for IRFR9310TRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9310TRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9310TRLPBF?
IRFR9310TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9310TRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9310TRLPBF?
For technical support, including IRFR9310TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9310TRLPBF requirements.
6.How does Aetrix verify that IRFR9310TRLPBF is sourced from the original manufacturer or authorized distributors?
All IRFR9310TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9310TRLPBF meets industry standards.
7.What is the process for return or replacement of IRFR9310TRLPBF?
All IRFR9310TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9310TRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9310TRLPBF part is unused and in its original packaging.
Return procedure for IRFR9310TRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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