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Vishay Siliconix IRFR9310TRLPBF-BE3
- Part No.:
- IRFR9310TRLPBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9310TRLPBF-BE3.pdf
- Description:
- MOSFET P-CH 400V 1.8A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,754
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Product details
Overview
IRFR9310TRLPBF-BE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -400 V drain-source voltage, 7.0 Ω RDS(on) at VGS = -10 V, and -1.8 A continuous drain current at TC = 25 °C. It delivers fast switching, fully avalanche-rated ruggedness, and is optimized for high-voltage DC-DC converters and industrial motor control.
For engineers reviewing the IRFR9310TRLPBF-BE3 datasheet, IRFR9310TRLPBF-BE3 pinout, IRFR9310TRLPBF-BE3 application, or IRFR9310TRLPBF-BE3 equivalent, key selection criteria include its -400 V blocking capability, low gate charge (13 nC), body diode recovery performance (trr ≤ 260 ns), thermal resistance (RthJC = 2.5 °C/W), and DPAK footprint compatibility with automated SMT assembly.
Technical Context
This device employs Vishay's third-generation silicon process to achieve high-voltage ruggedness with low on-resistance per die area. Its P-channel architecture enables high-side switching without level-shifting circuitry, and its fully rated avalanche capability supports unclamped inductive load handling up to 92 mJ single-pulse energy.
The MOSFET features integrated body diode with -4.0 V forward voltage at -1.1 A and reverse recovery charge (Qrr) of 640–960 nC. Gate drive requirements are defined by VGS(th) (-2.0 to -4.0 V), Qgs (3.2 nC), and Qgd (5.0 nC), supporting robust operation with standard -10 V gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -400 V - Supports high-voltage DC bus isolation in industrial power supplies and EV auxiliary systems. |
| RDS(on) | 7.0 Ω @ VGS = -10 V - Enables efficient conduction at low current levels typical in bias rails and protection circuits. |
| Qg | 13 nC - Determines gate driver power requirement and switching loss in hard-switched topologies. |
| ID (continuous) | -1.8 A @ TC = 25 °C - Defines maximum steady-state current under heatsink-cooled conditions. |
| EAS | 92 mJ - Quantifies single-pulse avalanche energy handling for inductive turn-off stress without failure. |
| RthJC | 2.5 °C/W - Enables thermal design with direct heatsink mounting via DPAK drain tab for power dissipation up to 50 W. |
| trr | 170–260 ns - Impacts commutation losses and EMI in flyback and resonant converters using body diode conduction. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; standardized 3-pin layout compatible with IPC-7351B footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connects to high-side return path or ground-referenced control logic. |
| Pin 2 (Gate) | Control input (G) | High-impedance input requiring -10 V for full enhancement; threshold range -2.0 to -4.0 V enables TTL/CMOS-compatible drive. |
| Pin 3 (Drain) | Power output (D) | Exposed metal tab - electrically and thermally connected to drain; must be soldered to PCB copper pour for thermal management and current return. |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 92 mJ single-pulse EAS and 5.0 mJ repetitive EAR ensure reliable operation under inductive switching stress without external snubbers. |
| P-channel high-side switch | Eliminates need for bootstrap or isolated gate drivers in high-side configurations, simplifying power stage layout in offline SMPS. |
| Low Qgd/Qg ratio | 5.0/13 ≈ 0.38 - Improves Miller immunity and reduces risk of false turn-on during high dV/dt transitions. |
| Fast body diode recovery | trr ≤ 260 ns with Qrr ≤ 960 nC - Minimizes reverse recovery losses in quasi-resonant and active-clamp topologies. |
| DPAK thermal performance | RthJC = 2.5 °C/W - Allows >30 W continuous power dissipation with minimal heatsink when mounted on ≥1"² FR-4 PCB. |
Applications
| Industrial Motor Control | High-Voltage DC-DC Converters |
|---|---|
Use Scenario: High-side switch in 24–48 V brushed DC motor H-bridge for factory automation actuators. IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled high-side power delivery with inherent shoot-through immunity. Use Value: -400 V rating accommodates back-EMF spikes; 7.0 Ω RDS(on) limits I²R loss at 1.1 A nominal load current. | Use Scenario: Primary-side switch in isolated flyback converter for telecom power supply with 375 V DC input. IC Role / Device Role / Timing Role: High-voltage P-channel switch enabling simplified gate drive and reduced component count in primary-side regulation. Use Value: Fully rated avalanche capability handles leakage inductance energy without clamping circuitry; 13 nC Qg supports 100 kHz+ switching. |
| Overvoltage Protection Circuits | AC-DC Auxiliary Power Supplies |
Use Scenario: Crowbar element in industrial PLC input module protecting against ±400 V transients. IC Role / Device Role / Timing Role: Voltage-triggered crowbar switch activated by transient overvoltage detection circuitry. Use Value: -400 V VDS matches IEC 61000-4-5 Level 4 surge requirements; 92 mJ EAS absorbs single-event energy without degradation. | Use Scenario: High-side switch in auxiliary bias winding regulator for LED driver main controller IC. IC Role / Device Role / Timing Role: P-channel MOSFET regulating auxiliary VCC rail during startup and light-load conditions. Use Value: Low 3.2 nC Qgs enables precise gate timing control; -2.0 to -4.0 V VGS(th) allows direct microcontroller GPIO drive. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiHFR9310-GE3 | Same silicon die, identical RDS(on), Qg, and avalanche ratings; halogen-free packaging per JEDEC J-STD-020. | No functional difference; suitable for RoHS-compliant and green manufacturing programs. | Select SiHFR9310-GE3 when halogen-free compliance is required per customer environmental specifications. |
| IRFU9310PbF | Same electrical specs but IPAK (TO-251) through-hole package; higher RthJA (110 °C/W vs. 50 °C/W for DPAK on PCB). | Better suited for prototyping, low-volume manual assembly, or legacy through-hole designs. | Choose IRFU9310PbF only when board-level reworkability or through-hole mounting is mandatory. |
Compared with IRFR9310TRLPBF-BE3, SiHFR9310-GE3 offers identical performance with enhanced environmental compliance, while IRFU9310PbF trades surface-mount efficiency for through-hole flexibility-neither is pin-compatible due to differing packages (DPAK vs. IPAK), requiring PCB layout revision.
Availability
IRFR9310TRLPBF-BE3 is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC conversion, overvoltage protection circuits, and AC-DC auxiliary power supplies requiring stable component supply across extended production lifecycles.
Supply support for IRFR9310TRLPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and high-voltage performance.
The IRFR9310TRLPBF-BE3 belongs to Vishay's third-generation high-voltage P-channel MOSFET family, engineered for demanding industrial and telecom power applications where avalanche robustness and thermal efficiency are critical.
FAQ
What is the maximum junction temperature for IRFR9310TRLPBF-BE3?
The IRFR9310TRLPBF-BE3 has an operating junction temperature range of -55 °C to +150 °C. This 150 °C maximum allows sustained operation in enclosed industrial enclosures with limited airflow, provided thermal design maintains TJ ≤ 150 °C under worst-case power dissipation and ambient conditions.
Does IRFR9310TRLPBF-BE3 require a gate resistor for stability?
Yes, IRFR9310TRLPBF-BE3 benefits from a series gate resistor (typically 10–47 Ω) to dampen ringing, control dI/dt during turn-on, and prevent spurious oscillation caused by PCB trace inductance interacting with its 5.0 nC Qgd. The datasheet specifies Rg = 21 Ω for switching time characterization.
Can IRFR9310TRLPBF-BE3 be used in linear mode operation?
No, IRFR9310TRLPBF-BE3 is not characterized or guaranteed for linear (ohmic) mode operation. Its Safe Operating Area (SOA) curve in the datasheet shows operation is limited to pulse widths ≤ 10 ms at moderate VDS, and continuous linear use risks thermal runaway due to positive RDS(on) temperature coefficient.
What is the gate-source leakage current specification for IRFR9310TRLPBF-BE3?
The IRFR9310TRLPBF-BE3 specifies gate-source leakage current (IGSS) as ±100 nA maximum at VGS = ±20 V and TJ = 25 °C. This low leakage ensures minimal gate drive current demand and stable turn-off state in high-impedance control circuits.
Is IRFR9310TRLPBF-BE3 lead (Pb)-free and RoHS compliant?
Yes, IRFR9310TRLPBF-BE3 is lead-free and complies with RoHS Directive 2011/65/EU. The "PbF" suffix denotes lead-free termination, and the "-BE3" suffix indicates packaging conforming to Vishay's green standards including halogen-free materials per IEC 61249-2-21.
IRFR9310TRLPBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 270 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
IRFR9310TRLPBF-BE3 FAQ
1.How can I place an order for IRFR9310TRLPBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9310TRLPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9310TRLPBF-BE3 reliable?
The price and inventory of IRFR9310TRLPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9310TRLPBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFR9310TRLPBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9310TRLPBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9310TRLPBF-BE3?
IRFR9310TRLPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9310TRLPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9310TRLPBF-BE3?
For technical support, including IRFR9310TRLPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9310TRLPBF-BE3 requirements.
6.How does Aetrix verify that IRFR9310TRLPBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFR9310TRLPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9310TRLPBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFR9310TRLPBF-BE3?
All IRFR9310TRLPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9310TRLPBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9310TRLPBF-BE3 part is unused and in its original packaging.
Return procedure for IRFR9310TRLPBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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