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Vishay Siliconix IRFR9310TRR
- Part No.:
- IRFR9310TRR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9310TRR.pdf
- Description:
- MOSFET P-CH 400V 1.8A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,448
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Product details
Overview
IRFR9310TRR from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -400 V drain-source voltage, 7.0 Ω RDS(on) at VGS = -10 V, and -1.8 A continuous drain current at TC = 25 °C. It delivers fully avalanche-rated ruggedness, fast switching (td(off) = 25 ns), and low gate charge (Qg = 13 nC), enabling use in high-voltage DC-DC converters and industrial motor control circuits.
For engineers reviewing the IRFR9310TRR datasheet, IRFR9310TRR pinout, IRFR9310TRR application, or IRFR9310TRR equivalent, key selection criteria include its -400 V blocking capability, DPAK thermal performance (RthJC = 2.5 °C/W), body diode recovery time (trr = 170–260 ns), and Pb-free/halogen-free compliance per Vishay S21-0373-Rev. E.
Technical Context
This third-generation Vishay power MOSFET uses advanced silicon processing to achieve low on-resistance per die area while maintaining high-voltage robustness. Its P-channel architecture enables high-side switching without level-shifting circuitry, and its fully avalanche-rated design supports unclamped inductive load handling up to 92 mJ single-pulse energy.
The device features integrated body diode with controlled reverse recovery (Qrr = 640–960 nC) and exhibits stable gate threshold voltage (VGS(th) = -2.0 to -4.0 V) across temperature. Thermal design is enabled by low junction-to-case resistance (2.5 °C/W) and compatibility with vapor-phase, infrared, and wave soldering per TO-252 mounting guidelines.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -400 V - Supports high-voltage DC bus isolation in industrial power supplies and motor drives. |
| RDS(on) | 7.0 Ω @ VGS = -10 V - Enables low conduction loss in low-current, high-voltage switching nodes. |
| ID (continuous) | -1.8 A @ TC = 25 °C - Suitable for auxiliary power rails and protection circuits requiring modest current handling. |
| Qg | 13 nC - Reduces gate drive power and enables efficient operation with standard logic-level drivers. |
| EAS | 92 mJ - Provides margin against inductive energy spikes in relay driving and solenoid control. |
| trr | 170–260 ns - Limits switching losses during body diode commutation in flyback and buck-boost topologies. |
| RthJC | 2.5 °C/W - Allows direct heatsinking via PCB copper pour or external heatsink for thermal management. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; standardized 3-pin layout optimized for automated assembly and high-power density PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal of P-channel MOSFET | Reference node for gate drive; connects to positive rail in high-side switch configurations. |
| Pin 2 (Gate) | Control electrode | Receives negative gate voltage relative to source to turn on; requires < -2.0 V to exceed VGS(th). |
| Pin 3 (Drain) | High-voltage output terminal | Exposed metal pad on underside; electrically and thermally connected to PCB ground plane or heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 92 mJ single-pulse EAS ensures reliable operation under inductive fault conditions without external snubbers. |
| P-channel topology | Enables high-side switching with simplified gate drive-no bootstrap capacitor or level shifter required. |
| DPAK surface-mount package | Supports automated reflow assembly and provides 2.5 °C/W junction-to-case thermal path for compact thermal design. |
| Low Qgd/Qg ratio | 5.0/13 ≈ 38% - Improves switching controllability and reduces Miller-induced shoot-through risk in hard-switched applications. |
| Body diode with controlled dV/dt | Peak diode recovery dV/dt = -24 V/ns - Limits voltage overshoot during reverse recovery in clamped inductive loads. |
Applications
| Industrial Motor Control | High-Voltage DC-DC Converters |
|---|---|
|
Use Scenario: Driving small brushed DC motors or stepper coil phases in factory automation controllers. IC Role / Device Role / Timing Role: High-side P-channel switch controlling power delivery to motor windings during PWM commutation. Use Value: -400 V rating accommodates 24–48 V bus transients; fast td(off) = 25 ns supports >100 kHz PWM without excessive switching loss. |
Use Scenario: Primary-side synchronous rectification or auxiliary bias supply in isolated flyback converters. IC Role / Device Role / Timing Role: High-voltage P-channel switch regulating energy transfer in non-isolated buck-derived topologies. Use Value: Low RDS(on) minimizes conduction loss at light loads; Qg = 13 nC allows direct microcontroller GPIO drive with minimal gate resistor. |
| Relay and Solenoid Drivers | Overvoltage Protection Circuits |
|
Use Scenario: Solid-state replacement for electromechanical relays in PLC I/O modules and HVAC actuators. IC Role / Device Role / Timing Role: High-side switch isolating 24–125 V DC control signals from load side during on/off transitions. Use Value: Fully avalanche-rated design absorbs inductive kickback energy (EAS = 92 mJ) without external TVS, reducing BOM count. |
Use Scenario: Reverse-polarity and overvoltage crowbar protection in telecom power entry modules. IC Role / Device Role / Timing Role: P-channel MOSFET configured as active clamp to disconnect input when VIN exceeds safe threshold. Use Value: VGS(th) range (-2.0 to -4.0 V) enables precise turn-on control using simple Zener-based gate bias networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiHFR9310TRR-GE3 | Same silicon die, identical VDS, RDS(on), Qg, and thermal specs; differs only in halogen-free packaging and RoHS marking. | No functional difference; suitable for same PCB layouts and thermal designs. | Select SiHFR9310TRR-GE3 for strict halogen-free compliance requirements per IPC-1752A. |
| IRFU9310PbF | Same electrical specs but IPAK (TO-251) through-hole package; RthJC = 2.5 °C/W unchanged, but RthJA higher due to leadframe geometry. | Requires through-hole assembly; better suited for prototyping or low-volume manual soldering where DPAK reflow is unavailable. | Choose IRFU9310PbF only when board assembly process prohibits surface-mount components. |
Compared with IRFR9310TRR, SiHFR9310TRR-GE3 offers identical performance with enhanced environmental compliance, while IRFU9310PbF trades surface-mount convenience for through-hole manufacturability-neither is pin-compatible due to differing package footprints (DPAK vs. IPAK), and both require layout revision.
Availability
IRFR9310TRR is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC converters, relay/solenoid drivers, and overvoltage protection circuits requiring stable component supply and long-term lifecycle support.
Supply support for IRFR9310TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.
The IRFR9310TRR belongs to Vishay's third-generation high-voltage P-channel MOSFET product line, engineered for industrial power conversion, protection, and control applications demanding avalanche robustness and surface-mount scalability.
FAQ
What is the maximum continuous drain current for IRFR9310TRR at 100 °C case temperature?
The IRFR9310TRR supports -1.1 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package and must be verified against actual PCB copper area and ambient conditions in the final design. The IRFR9310TRR datasheet (S21-0373-Rev. E) confirms this value under steady-state conduction with proper heatsinking.
Does IRFR9310TRR have a built-in body diode, and what are its key parameters?
Yes, the IRFR9310TRR integrates a parasitic body diode inherent to its vertical P-channel MOSFET structure. Key parameters include continuous source-drain current of -1.9 A, pulsed forward current of -7.6 A, forward voltage of -4.0 V at -1.1 A and 25 °C, and reverse recovery time of 170–260 ns. These values are measured per the test conditions in the Vishay S21-0373-Rev. E datasheet and define its behavior during freewheeling and commutation.
Can IRFR9310TRR be driven directly by a 3.3 V microcontroller GPIO?
No-IRFR9310TRR has a gate threshold voltage range of -2.0 V to -4.0 V and requires VGS ≤ -10 V for full enhancement (RDS(on) = 7.0 Ω). A 3.3 V GPIO cannot produce the necessary negative gate-source potential; a dedicated negative gate driver or level-shifting circuit is required. The IRFR9310TRR datasheet explicitly specifies VGS = -10 V for RDS(on) testing and does not support logic-level operation.
What is the thermal resistance from junction to ambient for IRFR9310TRR on a standard PCB?
For IRFR9310TRR mounted on a 1" square FR-4 PCB, the maximum junction-to-ambient thermal resistance (RthJA) is 50 °C/W, per the Thermal Resistance Ratings table in the Vishay S21-0373-Rev. E datasheet. This value assumes standard JEDEC test conditions and decreases significantly with added copper pour or external heatsinking. The IRFR9310TRR's RthJC of 2.5 °C/W remains constant regardless of PCB layout.
Is IRFR9310TRR compliant with lead-free and halogen-free standards?
Yes, IRFR9310TRR is lead (Pb)-free and halogen-free, as confirmed by its ordering code suffix "TRRPbFa" and compliance documentation referenced in Vishay S21-0373-Rev. E. It meets JEDEC J-STD-609A Class 1 for moisture sensitivity and conforms to RoHS Directive 2011/65/EU and Vishay's material categorization standard (doc?99912). The IRFR9310TRR is qualified for reflow soldering up to 300 °C peak temperature for 10 seconds.
IRFR9310TRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 270 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR9310TRR FAQ
1.How can I place an order for IRFR9310TRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9310TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9310TRR reliable?
The price and inventory of IRFR9310TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9310TRR is usually 5 days.
3.What payment methods are accepted for IRFR9310TRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9310TRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9310TRR?
IRFR9310TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9310TRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9310TRR?
For technical support, including IRFR9310TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9310TRR requirements.
6.How does Aetrix verify that IRFR9310TRR is sourced from the original manufacturer or authorized distributors?
All IRFR9310TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9310TRR meets industry standards.
7.What is the process for return or replacement of IRFR9310TRR?
All IRFR9310TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9310TRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9310TRR part is unused and in its original packaging.
Return procedure for IRFR9310TRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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