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Vishay Siliconix IRFR9310TRRPBF
- Part No.:
- IRFR9310TRRPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR9310TRRPBF.pdf
- Description:
- MOSFET P-CH 400V 1.8A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,666
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Product details
Overview
IRFR9310TRRPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -400 V drain-source voltage, 7.0 Ω RDS(on) at VGS = -10 V, and -1.8 A continuous drain current at TC = 25 °C. It delivers rugged avalanche performance (92 mJ single-pulse EAS) and fast switching (tr = 10 ns, tf = 24 ns), making it suitable for high-voltage DC-DC converters and industrial motor control circuits.
For engineers reviewing the IRFR9310TRRPBF datasheet, IRFR9310TRRPBF pinout, IRFR9310TRRPBF application, or IRFR9310TRRPBF equivalent, key selection criteria include its -400 V blocking capability, fully avalanche-rated operation, DPAK thermal performance (RthJC = 2.5 °C/W), and compatibility with standard surface-mount reflow profiles.
Technical Context
This device employs third-generation silicon processing to achieve low on-resistance per die area while maintaining high-voltage robustness. Its P-channel architecture enables high-side switching without level-shifting circuitry, and its integrated body diode supports synchronous rectification and freewheeling in flyback and buck-derived topologies.
The IRFR9310TRRPBF features gate charge values of Qg = 13 nC, Qgs = 3.2 nC, and Qgd = 5.0 nC at VGS = -10 V, enabling efficient drive with moderate gate resistance. Its dV/dt immunity (-24 V/ns peak diode recovery rate) and -55 to +150 °C operating junction temperature range support reliable operation in harsh industrial environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -400 V - Supports high-voltage DC bus isolation in industrial power supplies and motor drives. |
| RDS(on) | 7.0 Ω @ VGS = -10 V - Enables low conduction loss at modest load currents up to -1.1 A at 100 °C case temperature. |
| ID (cont.) | -1.8 A @ TC = 25 °C - Sustains continuous current in thermally managed PCB layouts with adequate copper area. |
| EAS | 92 mJ - Withstands unclamped inductive energy without failure, critical for relay/snubberless switching. |
| Qg | 13 nC - Determines gate driver power requirement and switching speed trade-off in hard-switched applications. |
| tr/tf | 10 ns / 24 ns - Enables high-frequency operation (>100 kHz) with controlled EMI in SMPS designs. |
| RthJC | 2.5 °C/W - Allows 50 W power dissipation with ≤125 °C junction rise above 25 °C case temperature. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction to PCB copper. Standard footprint per Vishay Application Note 826: 6.18 mm × 10.67 mm pad layout with 2.28 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connects to system ground or low-side return path in high-side switch configuration. |
| Pin 2 (Gate) | Control terminal (G) | High-impedance input requiring < ±100 nA leakage; driven negative relative to source to turn on P-channel device. |
| Pin 3 (Drain) | Power output (D) | Exposed metal pad on bottom surface; electrically and thermally connected to internal die drain; must be soldered to large copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 92 mJ single-pulse EAS ensures survivability during inductive load switching without external snubbers. |
| P-channel enhancement mode | Eliminates need for high-side gate driver ICs in buck regulators and reverse polarity protection circuits. |
| DPAK surface-mount package | Enables automated assembly and superior thermal transfer vs. through-hole alternatives like IRFU9310. |
| Fast switching performance | 10 ns rise time and 24 ns fall time reduce switching losses in high-frequency DC-DC converters. |
| Low gate charge | 13 nC total gate charge minimizes driver power consumption and simplifies gate resistor selection. |
Applications
| Industrial Motor Control | High-Voltage DC-DC Converter |
|---|---|
Use Scenario: Controlling direction and braking in 24–48 V brushed DC motors using H-bridge topology. IC Role / Device Role / Timing Role: High-side P-channel switch providing bidirectional current flow with inherent shoot-through protection. Use Value: -400 V rating accommodates back-EMF spikes; 7.0 Ω RDS(on) limits I²R heating at 1.1 A motor stall current. |
Use Scenario: Primary-side switch in isolated flyback converter for telecom power supply (48 V input, 12 V output). IC Role / Device Role / Timing Role: Main power switch handling repetitive 100 kHz PWM with 50% duty cycle and 320 V VDS stress. Use Value: 92 mJ EAS absorbs leakage inductance energy; Qg = 13 nC enables efficient drive with low-power gate driver. |
| Reverse Polarity Protection | AC/DC Front-End Clamping |
Use Scenario: Preventing damage from incorrect battery connection in portable medical equipment. IC Role / Device Role / Timing Role: Low-loss series pass element placed between input connector and system rail. Use Value: -400 V VDS withstands transient surges; RDS(on) = 7.0 Ω adds only ~7.7 mW loss at 1.1 A load current. |
Use Scenario: Snubberless clamping of transformer reset voltage in offline AC/DC adapters. IC Role / Device Role / Timing Role: Avalanche-energy-absorbing clamp switch replacing Zener-diode-based solutions. Use Value: Fully rated 92 mJ EAS eliminates need for external TVS; -24 V/ns dV/dt rating prevents false triggering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR9310PbF | Same die and DPAK package but RoHS-compliant lead-free finish without halogen-free certification. | Identical electrical specs and thermal performance; differs only in plating composition and JEDEC compliance scope. | Select IRFR9310PbF when halogen-free material declaration is not required and legacy Pb-free qualification suffices. |
| SiHFR9310TR-GE3 | Vishay's second-source variant with identical VDS, RDS(on), and Qg; certified halogen-free and RoHS-compliant per J-STD-609. | Same functional replacement; GE3 suffix indicates green packaging and tighter process controls for automotive-grade reliability. | Choose SiHFR9310TR-GE3 for designs requiring full halogen-free compliance and extended lifecycle assurance. |
Compared with IRFR9310TRRPBF, IRFR9310PbF offers identical performance with simplified environmental compliance, while SiHFR9310TR-GE3 provides enhanced material traceability and broader industry certifications-both serve as drop-in replacements in DPAK footprints but differ in regulatory documentation and long-term supply chain commitments.
Availability
IRFR9310TRRPBF is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC conversion, and reverse polarity protection requiring stable component supply across multi-year production cycles.
Supply support for IRFR9310TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and manufacturability.
The IRFR9310TRRPBF belongs to Vishay's third-generation high-voltage P-channel MOSFET family, engineered for reliable high-side switching and avalanche-tolerant operation in industrial power systems.
FAQ
What is the maximum continuous drain current for IRFR9310TRRPBF at 100 °C case temperature?
The IRFR9310TRRPBF supports -1.1 A continuous drain current at TC = 100 °C, derated linearly from -1.8 A at 25 °C using a 0.40 W/°C factor. This value reflects thermal limitations of the DPAK package under real-world PCB mounting conditions and must be validated against actual board layout and ambient airflow.
Does IRFR9310TRRPBF require a gate driver IC for typical switching applications?
The IRFR9310TRRPBF can be driven directly by microcontroller GPIO pins with sufficient current sink capability (≥10 mA) when operating at low frequencies (<10 kHz) and light loads. For hard-switched applications above 50 kHz or with >1 A load current, a dedicated gate driver such as TC4427 is recommended to ensure full turn-on (VGS ≤ -10 V) and minimize switching losses.
How does the avalanche rating of IRFR9310TRRPBF impact circuit design?
The 92 mJ single-pulse avalanche energy rating of IRFR9310TRRPBF allows it to safely absorb inductive energy during switching transients without external snubbers. Designers may eliminate Zener clamps or RC networks in flyback and relay-driving circuits, reducing BOM count and improving reliability-provided pulse width remains ≤300 μs and duty cycle ≤2 %.
What is the thermal resistance from junction to case (RthJC) for IRFR9310TRRPBF?
The IRFR9310TRRPBF has a maximum junction-to-case (drain) thermal resistance of 2.5 °C/W, measured from die junction to the exposed drain pad. This value assumes proper soldering to a minimum 1"² FR-4 PCB copper area and enables calculation of junction temperature rise: TJ = TC + (PD × 2.5), where PD is power dissipated in the MOSFET.
Can IRFR9310TRRPBF be used in place of IRFU9310 in existing designs?
The IRFR9310TRRPBF is not a direct replacement for IRFU9310 due to package differences: IRFR9310TRRPBF uses surface-mount DPAK (TO-252), while IRFU9310 uses through-hole IPAK (TO-251). Although both share identical electrical specifications, PCB layout revision is required to accommodate the DPAK footprint, thermal pad, and soldering method-no electrical redesign is needed.
IRFR9310TRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 270 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR9310TRRPBF FAQ
1.How can I place an order for IRFR9310TRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR9310TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR9310TRRPBF reliable?
The price and inventory of IRFR9310TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9310TRRPBF is usually 5 days.
3.What payment methods are accepted for IRFR9310TRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9310TRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR9310TRRPBF?
IRFR9310TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR9310TRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR9310TRRPBF?
For technical support, including IRFR9310TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9310TRRPBF requirements.
6.How does Aetrix verify that IRFR9310TRRPBF is sourced from the original manufacturer or authorized distributors?
All IRFR9310TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9310TRRPBF meets industry standards.
7.What is the process for return or replacement of IRFR9310TRRPBF?
All IRFR9310TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9310TRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR9310TRRPBF part is unused and in its original packaging.
Return procedure for IRFR9310TRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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