Vishay Siliconix IRFRC20

Overview

IRFRC20 from Vishay Siliconix is a 600 V, 2.0 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 4.4 Ω R_DS(on) at V_GS = 10 V, 18 nC total gate charge, and repetitive avalanche rating up to 2.0 A - designed for high-voltage DC-DC converters, offline SMPS auxiliary supplies, and industrial motor control interface stages.

For engineers reviewing the IRFRC20 datasheet, IRFRC20 pinout, IRFRC20 application, or IRFRC20 equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery performance (t_rr = 290–580 ns), and real-world mounting guidance for PCB-integrated thermal management.

Technical Context

The IRFRC20 employs third-generation planar vertical DMOS technology optimized for ruggedness and fast switching in high-voltage, low-current applications. Its dynamic dV/dt rating of 3.0 V/ns and unclamped inductive switching capability (E_AS = 74 mJ) support reliable operation under transient overvoltage conditions without external snubbers.

It features a monolithic integrated body diode with V_SD = 1.6 V at I_S = 2.0 A and Q_rr = 0.67–1.3 μC, enabling use in freewheeling and synchronous rectification roles where controlled reverse recovery is critical. Thermal resistance is specified as R_thJC = 3.0 °C/W and R_thJA = 50 °C/W on 1" FR-4 PCB.

Key Specifications

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction to PCB copper. Standard lead configuration: G (Gate), D (Drain), S (Source) - pin 1 = Gate, pin 2 = Drain, pin 3 = Source (viewed from top, marking side up, leads down).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP6NK60ZFP and FQP6N60, the IRFRC20 offers DPAK surface-mount compatibility and lower gate charge (18 nC vs. ≥30 nC), enabling compact, high-density layouts and reduced driver complexity - but trades off current rating and conduction loss for manufacturability and thermal integration on PCB.

Availability

IRFRC20 is available at Aetrix Electronics and suitable for AC-DC auxiliary supplies, industrial signal isolation, and low-power flyback snubbing requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFRC20 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRFRC20 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for ruggedness, fast switching, and cost-effective integration into space- and thermal-constrained SMT power systems.

FAQ

What is the maximum continuous drain current for IRFRC20 at 100 °C case temperature?

The IRFRC20 supports 1.3 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package and PCB thermal path. At 25 °C case temperature, it delivers 2.0 A continuously. Engineers must verify actual junction temperature using R_thJC = 3.0 °C/W and expected power dissipation to ensure safe operation within the -55 °C to +150 °C operating range.

Does IRFRC20 have an integrated body diode, and what are its key parameters?

Yes, the IRFRC20 includes an integral reverse p-n junction body diode. Key parameters include V_SD = 1.6 V at I_S = 2.0 A and T_J = 25 °C, reverse recovery time t_rr = 290–580 ns, and reverse recovery charge Q_rr = 0.67–1.3 μC. These values are measured under standardized conditions (IF = 2.0 A, dI/dt = 100 A/μs) and directly impact efficiency and EMI in freewheeling and synchronous rectification applications.

Can IRFRC20 be used in avalanche mode, and what are the limits?

Yes, the IRFRC20 is explicitly rated for repetitive avalanche operation: I_AR = 2.0 A and E_AR = 4.2 mJ, with pulse width limited by maximum junction temperature. Single-pulse avalanche energy is rated at E_AS = 74 mJ. These ratings assume proper gate bias (V_GS = 0 V during avalanche) and thermal management - exceeding these limits risks parametric shift or catastrophic failure.

What is the recommended PCB pad layout for IRFRC20 in DPAK (TO-252) package?

Vishay recommends minimum pad dimensions of 0.224" × 0.180" (5.69 mm × 4.57 mm) for the source pad and 0.243" × 0.087" (6.18 mm × 2.20 mm) for the drain thermal pad, per Application Note 826. A copper pour connected to the drain pad improves heat dissipation; thermal vias beneath the pad enhance vertical conduction. The gate pad should be kept small and routed away from noisy nodes to minimize coupling.

Is IRFRC20 RoHS-compliant and halogen-free?

Yes, the IRFRC20 is offered in Pb-free and halogen-free versions, designated by suffixes such as "-GE3" (e.g., SiHFRC20-GE3) or "PbF" (e.g., IRFRC20PbF). These variants comply with EU RoHS Directive 2011/65/EU and Vishay's Material Declaration per document 99912. Lead-free soldering profiles must follow JEDEC J-STD-020 guidelines, with peak temperature ≤260 °C for 10 seconds.