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Vishay Siliconix IRFRC20PBF-BE3
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- Part No.:
- IRFRC20PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFRC20PBF-BE3.pdf
- Description:
- N-CHANNEL 600V
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
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Product details
Overview
IRFRC20PBF-BE3 from Vishay Siliconix is a 600 V, 2.0 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 4.4 Ω RDS(on) at VGS = 10 V, 18 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, offline SMPS auxiliary supplies, and LED driver high-side switches.
For engineers reviewing the IRFRC20PBF-BE3 datasheet, IRFRC20PBF-BE3 pinout, IRFRC20PBF-BE3 application, or IRFRC20PBF-BE3 equivalent, key selection criteria include its 600 V blocking capability, 74 mJ single-pulse avalanche energy, 3.0 V/ns peak diode recovery dV/dt rating, and compatibility with vapor-phase and wave soldering processes.
Technical Context
This third-generation power MOSFET employs planar stripe cell structure optimized for ruggedness and fast switching. Its dynamic dV/dt rating and unclamped inductive switching (UIS) capability support reliable operation in hard-switched topologies with inductive loads.
The device integrates a low-Qgd/Qg ratio (8.9/18 nC), enabling reduced Miller-induced turn-off delay and improved controllability during high-speed switching. Thermal resistance of 3.0 °C/W (junction-to-case) supports efficient heat transfer to PCB copper when mounted on 1" FR-4.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Supports primary-side switching in 400 V DC bus and universal AC-input offline converters |
| RDS(on) @ VGS = 10 V | 4.4 Ω - Enables low conduction loss at 1–2 A continuous drain current in compact SMT designs |
| Qg | 18 nC - Determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers |
| EAS | 74 mJ - Specifies maximum single-pulse inductive energy handling without failure under UIS conditions |
| dV/dt (diode recovery) | 3.0 V/ns - Limits parasitic turn-on risk during body diode commutation in flyback and resonant circuits |
| TJ range | −55 to +150 °C - Allows operation in industrial and extended-temperature environments without derating |
| RthJC | 3.0 °C/W - Enables direct thermal path to heatsink or copper pour; critical for thermal design in sealed enclosures |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. Standard lead finish: Pb-free, halogen-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control terminal | Receives voltage-controlled signal to modulate channel conductivity; requires < ±20 V absolute max rating |
| Drain (D) | High-side power output | Connected to high-voltage rail; electrically and thermally tied to exposed metal tab (case) |
| Source (S) | Reference node / return path | Serves as common reference for gate drive and load current return; defines VGS control voltage |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables robust operation under transient overloads without external snubbers in flyback and boost converters |
| Dynamic dV/dt rating | 3.0 V/ns ensures immunity to false triggering during rapid voltage transients across drain-source |
| Fast switching (tr/tf = 23/25 ns) | Reduces switching losses in 50–500 kHz SMPS designs while maintaining EMI control |
| Surface-mount (DPAK) | Supports automated assembly and high-density PCB layouts; compatible with IPC-7095 Class 2 guidelines |
| Low Qgd/Qg ratio (0.49) | Improves gate drive efficiency and reduces susceptibility to Miller-induced shoot-through in half-bridge configurations |
Applications
| Offline AC-DC Adapters | Industrial DC-DC Converters |
|---|---|
Use Scenario: Primary-side switch in 5–25 W universal-input flyback converters powering IoT gateways and smart sensors. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from AC line to isolated output via transformer. Use Value: 600 V rating accommodates 385 V DC link after bridge rectification; 74 mJ EAS absorbs leakage inductance spikes without clamping. |
Use Scenario: Isolated auxiliary supply in PLC backplanes and motor drives requiring 12–24 V bias rails. IC Role / Device Role / Timing Role: Primary-side switch in regulated forward or active-clamp forward topology. Use Value: 4.4 Ω RDS(on) minimizes conduction loss at 1.3 A continuous current; DPAK thermal performance sustains >1.5 W dissipation on FR-4. |
| LED Driver Power Stages | High-Voltage Gate Drivers |
Use Scenario: High-side switch in constant-current LED string drivers for street lighting and architectural illumination. IC Role / Device Role / Timing Role: Series-pass element regulating current through multi-string LED arrays up to 300 V. Use Value: Repetitive avalanche rating handles LED open-circuit transients; 3.0 V/ns dV/dt prevents false turn-on during dimming transitions. |
Use Scenario: Level-shifting high-side driver stage in IGBT or SiC MOSFET gate driver ICs for industrial inverters. IC Role / Device Role / Timing Role: Bootstrap switch or floating supply regulator in high-side gate driver IC reference designs. Use Value: Low Qg (18 nC) enables fast bootstrap capacitor recharge; DPAK package allows integration into compact driver modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiHFRC20-GE3 | Same die, identical RDS(on), Qg, and avalanche specs; Pb-free/halogen-free termination vs. IRFRC20PBF-BE3's Pb-free only | Preferred where full halogen-free compliance (IEC 61249-2-21) is mandated for automotive or green electronics programs | Select SiHFRC20-GE3 for RoHS+halogen-free requirements; otherwise IRFRC20PBF-BE3 offers same electrical performance at lower cost tier |
| IRFUC20PbF | Identical silicon but IPAK (TO-251) through-hole package; higher RthJA (110 °C/W vs. 50 °C/W PCB mount) and no exposed drain pad | Better suited for prototyping, low-volume through-hole assembly, or legacy board upgrades where rework tolerance is prioritized over thermal density | Choose IRFUC20PbF only when DPAK footprint is incompatible; avoid in thermally constrained or high-reliability SMT production |
Compared with SiHFRC20-GE3 and IRFUC20PbF, IRFRC20PBF-BE3 delivers optimal thermal performance in surface-mount systems while meeting standard Pb-free requirements-making it the preferred choice for volume-manufactured, space-constrained, high-voltage power stages where DPAK mounting is feasible.
Availability
IRFRC20PBF-BE3 is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial DC-DC converters, and LED driver power stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for IRFRC20PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFRC20PBF-BE3 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for rugged, cost-effective switching in 400–600 V DC bus applications with emphasis on avalanche survivability and SMT manufacturability.
FAQ
What is the maximum continuous drain current for IRFRC20PBF-BE3 at 100 °C case temperature?
The IRFRC20PBF-BE3 supports 1.3 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package under sustained power dissipation; actual usable current depends on PCB copper area, ambient temperature, and airflow. The IRFRC20PBF-BE3 must be mounted on ≥1"² FR-4 with adequate copper pour to achieve this rating.
Does IRFRC20PBF-BE3 have a built-in body diode, and what are its key parameters?
Yes, the IRFRC20PBF-BE3 integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Key diode parameters include 2.0 A continuous source-drain current, 1.6 V forward voltage at 2.0 A and 25 °C, 290–580 ns reverse recovery time, and 0.67–1.3 μC reverse recovery charge. These values are measured under standardized conditions (TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A/μs) and directly impact performance in freewheeling and synchronous rectification roles.
Is IRFRC20PBF-BE3 pin-compatible with IRFUC20PbF?
No, IRFRC20PBF-BE3 is not pin-compatible with IRFUC20PbF. While both share identical silicon characteristics, IRFRC20PBF-BE3 uses the DPAK (TO-252) surface-mount package with three gull-wing leads and an exposed drain pad, whereas IRFUC20PbF uses the IPAK (TO-251) through-hole package with straight leads and no thermal pad. Their footprints, soldering methods, and mechanical mounting differ fundamentally-requiring separate PCB layouts.
What is the gate threshold voltage range for IRFRC20PBF-BE3, and how does it affect drive circuit design?
The gate threshold voltage (VGS(th)) for IRFRC20PBF-BE3 is specified from 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This range indicates the minimum gate voltage needed to initiate conduction; reliable full enhancement requires ≥10 V drive. Designers must ensure gate drivers deliver sufficient voltage margin above 4.0 V to accommodate tolerances and noise, especially in high-noise industrial environments where undershoot could cause partial turn-on and overheating of the IRFRC20PBF-BE3.
Can IRFRC20PBF-BE3 be used in avalanche mode repeatedly, and what are the limits?
Yes, IRFRC20PBF-BE3 is explicitly rated for repetitive avalanche operation with IAR = 2.0 A and EAR = 4.2 mJ per pulse, provided pulse width and duty cycle remain within limits defined by junction temperature (TJ ≤ 150 °C). Repetitive avalanche capability is validated per Figure 11 in the datasheet and requires careful thermal management-especially in DPAK mounting-to prevent cumulative heating. The IRFRC20PBF-BE3 must not exceed its linear derating factor of 0.33 W/°C above 25 °C case temperature during such operation.
IRFRC20PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.4Ohm @ 1.2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 350 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
IRFRC20PBF-BE3 FAQ
1.How can I place an order for IRFRC20PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFRC20PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFRC20PBF-BE3 reliable?
The price and inventory of IRFRC20PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFRC20PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFRC20PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFRC20PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFRC20PBF-BE3?
IRFRC20PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFRC20PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFRC20PBF-BE3?
For technical support, including IRFRC20PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFRC20PBF-BE3 requirements.
6.How does Aetrix verify that IRFRC20PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFRC20PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFRC20PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFRC20PBF-BE3?
All IRFRC20PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFRC20PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFRC20PBF-BE3 part is unused and in its original packaging.
Return procedure for IRFRC20PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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