Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFRC20TRLPBF

Name: IRFRC20TRLPBF
Brand: Vishay Siliconix
SKU: IRFRC20TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFRC20TRLPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFRC20TRLPBF.pdf

Description:: MOSFET N-CH 600V 2A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,611

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFRC20TRLPBF from Vishay Siliconix is a 600 V, 2.0 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 4.4 Ω R_DS(on) at V_GS = 10 V, 18 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, offline SMPS, and AC-DC auxiliary supplies.

For engineers reviewing the IRFRC20TRLPBF datasheet, IRFRC20TRLPBF pinout, IRFRC20TRLPBF application, or IRFRC20TRLPBF equivalent, this part supports fast switching with 10 ns turn-on delay, 23 ns rise time, and robust dV/dt immunity up to 3.0 V/ns-critical for flyback and resonant converter designs requiring ruggedness and thermal stability on FR-4 PCBs.

Technical Context

This third-generation power MOSFET employs planar V-groove technology optimized for high-voltage blocking and low conduction loss. Its dynamic dV/dt rating and unclamped inductive switching capability (E_AS = 74 mJ) enable reliable operation under transient overvoltage conditions without external snubbers.

The device integrates a fast-recovery body diode (t_rr = 290–580 ns, Q_rr = 0.67–1.3 μC) and exhibits linear derating of 0.33 W/°C above 25 °C case temperature-supporting thermally constrained SMT layouts where junction-to-case thermal resistance is 3.0 °C/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full mains-referenced DC bus voltages in 230 VAC offline applications.
R_DS(on)	4.4 Ω @ V_GS = 10 V - Enables <2.0 A continuous drain current with ≤8.8 W conduction loss at rated ID.
Q_g	18 nC - Determines gate drive energy requirement; compatible with standard 12 V PWM controllers driving ≤100 pF Miller capacitance.
E_AS	74 mJ - Supports single-pulse unclamped inductive switching without failure-critical for transformer reset in flyback topologies.
t_rr	290–580 ns - Limits reverse recovery losses during hard-switched transitions; reduces EMI generation vs. slower diodes.
R_thJC	3.0 °C/W - Allows direct heatsinking via exposed drain pad; enables >40 W dissipation with modest copper area and thermal interface.
I_D (T_C = 100 °C)	1.3 A - Defines usable current envelope in thermally limited PCB-mounted configurations without forced air.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. Standard lead finish: Pb-free and halogen-free per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures compatibility with standard microcontroller GPIO or dedicated gate drivers.
D (Drain)	High-side switch node	Connected to exposed metal tab-must be routed to high-voltage net and thermally coupled to ≥1"² copper pour for safe 42 W dissipation.
S (Source)	Power return reference	Serves as local ground reference for gate drive loop; low-inductance layout essential to suppress ringing during 40 A/μs dI/dt events.

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 2.0 A I_AR and 4.2 mJ E_AR-enables reliable operation under repeated inductive fault conditions without derating.
Dynamic dV/dt immunity	3.0 V/ns - Prevents false turn-on during high-slew-rate voltage transients common in high-frequency SMPS.
Fast switching performance	10 ns t_d(on), 23 ns t_r, 30 ns t_d(off), 25 ns t_f - Reduces switching losses in 100–500 kHz power stages.
Low Q_gd/Q_g ratio	8.9/18 = 49% - Improves Miller immunity and enables stable operation with moderate gate resistance (R_g = 25 Ω).
Surface-mount (DPAK)	Compatible with vapor-phase and IR reflow per JEDEC J-STD-020 - supports automated assembly in industrial and consumer power supplies.

Applications

AC-DC Auxiliary Supply	Flyback Converter Primary Switch
Use Scenario: Provides isolated bias power for PWM controllers and gate drivers in offline AC-DC adapters and LED drivers. IC Role / Device Role / Timing Role: High-side switching element operating at 65–130 kHz with discontinuous conduction mode (DCM) control. Use Value: 600 V rating accommodates 375 V DC bus with margin; 4.4 Ω R_DS(on) limits standby losses below 150 mW at 10 mA load.	Use Scenario: Primary-side power switch in universal-input (85–265 VAC) flyback converters delivering 5–24 V output. IC Role / Device Role / Timing Role: Main energy transfer switch synchronized to controller's gate signal; handles peak currents up to 8.0 A. Use Value: Repetitive avalanche rating absorbs leakage inductance spikes without snubber, reducing BOM count and improving efficiency by ~0.5%.
Industrial DC-DC Isolated Module	LED Driver Secondary-Side Switch
Use Scenario: Input-stage switch in 24–48 V input, 300–400 V output isolated DC-DC modules for PLC I/O and sensor interfaces. IC Role / Device Role / Timing Role: High-voltage buck-derived switch operating at fixed 200 kHz with active clamp or RCD reset. Use Value: 3.0 °C/W R_thJC enables 1.3 A continuous current at 100 °C case temperature-maintaining >92% efficiency across full load range.	Use Scenario: Secondary-side synchronous rectifier or dimming FET in constant-current LED drivers with analog/PWM dimming. IC Role / Device Role / Timing Role: Low-duty-cycle switching element controlling LED string current with <100 ns timing resolution. Use Value: Fast 290 ns body diode t_rr minimizes cross-conduction loss during transition between primary and secondary conduction phases.

AC-DC Auxiliary Supply

Flyback Converter Primary Switch

Use Scenario: Provides isolated bias power for PWM controllers and gate drivers in offline AC-DC adapters and LED drivers.

IC Role / Device Role / Timing Role: High-side switching element operating at 65–130 kHz with discontinuous conduction mode (DCM) control.

Use Value: 600 V rating accommodates 375 V DC bus with margin; 4.4 Ω R_DS(on) limits standby losses below 150 mW at 10 mA load.

Use Scenario: Primary-side power switch in universal-input (85–265 VAC) flyback converters delivering 5–24 V output.

IC Role / Device Role / Timing Role: Main energy transfer switch synchronized to controller's gate signal; handles peak currents up to 8.0 A.

Use Value: Repetitive avalanche rating absorbs leakage inductance spikes without snubber, reducing BOM count and improving efficiency by ~0.5%.

Industrial DC-DC Isolated Module

LED Driver Secondary-Side Switch

Use Scenario: Input-stage switch in 24–48 V input, 300–400 V output isolated DC-DC modules for PLC I/O and sensor interfaces.

IC Role / Device Role / Timing Role: High-voltage buck-derived switch operating at fixed 200 kHz with active clamp or RCD reset.

Use Value: 3.0 °C/W R_thJC enables 1.3 A continuous current at 100 °C case temperature-maintaining >92% efficiency across full load range.

Use Scenario: Secondary-side synchronous rectifier or dimming FET in constant-current LED drivers with analog/PWM dimming.

IC Role / Device Role / Timing Role: Low-duty-cycle switching element controlling LED string current with <100 ns timing resolution.

Use Value: Fast 290 ns body diode t_rr minimizes cross-conduction loss during transition between primary and secondary conduction phases.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, 5.5 Ω R_DS(on), 16 nC Q_g, TO-220FP package	Through-hole mounting only; higher R_DS(on) increases conduction loss by ~25% at 1.2 A	Preferred when board space allows through-hole and lower gate charge is prioritized over thermal performance.
SiHFRC20TRLPbF	Identical specs, same DPAK package, Vishay alternate part number with GE3 suffix	No functional difference; identical pinout, thermal profile, and reliability data	Drop-in replacement with same tape-and-reel packaging and RoHS compliance-ideal for supply chain diversification.

Compared with IRFRC20TRLPBF, STP6NK60ZFP offers lower gate charge but requires through-hole assembly and delivers higher conduction loss, while SiHFRC20TRLPbF provides identical electrical and thermal behavior with alternate manufacturing traceability-making it the optimal direct alternative for SMT production continuity.

Availability

IRFRC20TRLPBF is available at Aetrix Electronics and suitable for AC-DC auxiliary supplies, flyback converter primary switches, and industrial DC-DC isolated modules requiring stable component supply across multi-year production cycles.

Supply support for IRFRC20TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The IRFRC20TRLPBF belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for rugged, high-efficiency switching in offline and isolated DC-DC power conversion systems.

FAQ

What is the maximum continuous drain current for IRFRC20TRLPBF at 100 °C case temperature?

The IRFRC20TRLPBF supports 1.3 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects linear derating from 2.0 A at 25 °C using the 0.33 W/°C factor and accounts for thermal resistance limitations in typical PCB-mount configurations.

Does IRFRC20TRLPBF have avalanche capability, and how is it rated?

Yes, IRFRC20TRLPBF is repetitively avalanche rated with I_AR = 2.0 A and E_AR = 4.2 mJ, and single-pulse avalanche energy E_AS = 74 mJ. These ratings are validated per test conditions in Figure 12 and allow safe operation during inductive switching transients without external protection circuitry.

What is the gate-source threshold voltage range for IRFRC20TRLPBF?

The gate-source threshold voltage V_GS(th) for IRFRC20TRLPBF is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 5 V or 10 V gate drive while maintaining noise immunity against spurious signals.

Can IRFRC20TRLPBF be used in surface-mount applications with standard reflow profiles?

Yes, IRFRC20TRLPBF is qualified for surface-mount assembly using vapor-phase, infrared, or wave soldering. Its DPAK (TO-252) package meets JEDEC J-STD-020 moisture sensitivity level 1 and supports peak reflow temperatures up to 260 °C for 10 seconds.

What is the body diode reverse recovery time for IRFRC20TRLPBF?

The body diode reverse recovery time t_rr for IRFRC20TRLPBF is 290–580 ns at T_J = 25 °C, I_F = 2.0 A, and dI/dt = 100 A/μs. This fast recovery characteristic reduces switching losses and EMI in hard-switched topologies such as flyback and forward converters.

IRFRC20TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.4Ohm @ 1.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFRC20TRLPBF FAQ

1.How can I place an order for IRFRC20TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFRC20TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFRC20TRLPBF reliable?

The price and inventory of IRFRC20TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFRC20TRLPBF is usually 5 days.

3.What payment methods are accepted for IRFRC20TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFRC20TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFRC20TRLPBF?

IRFRC20TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFRC20TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFRC20TRLPBF?

For technical support, including IRFRC20TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFRC20TRLPBF requirements.

6.How does Aetrix verify that IRFRC20TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFRC20TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFRC20TRLPBF meets industry standards.

7.What is the process for return or replacement of IRFRC20TRLPBF?

All IRFRC20TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFRC20TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFRC20TRLPBF part is unused and in its original packaging.

Return procedure for IRFRC20TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …