Vishay Siliconix IRFRC20TRLPBF-BE3
- Part No.:
- IRFRC20TRLPBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFRC20TRLPBF-BE3.pdf
- Description:
- MOSFET N-CH 600V 2A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:4,376
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Product details
Overview
IRFRC20TRLPBF-BE3 from Vishay Siliconix is a 600 V, 2.0 A N-channel power MOSFET in DPAK (TO-252) package, featuring 4.4 Ω RDS(on) at VGS = 10 V, 18 nC total gate charge, and repetitive avalanche rating up to 2.0 A - designed for high-voltage flyback and offline SMPS primary-side switching.
For engineers reviewing the IRFRC20TRLPBF-BE3 datasheet, IRFRC20TRLPBF-BE3 pinout, IRFRC20TRLPBF-BE3 application, or IRFRC20TRLPBF-BE3 equivalent, this part supports stable high-voltage DC-DC conversion, unclamped inductive switching, and thermally constrained PCB-mount designs requiring ≤2.5 W dissipation on FR-4.
Technical Context
This third-generation silicon power MOSFET uses planar stripe cell structure optimized for ruggedness and fast switching, with dynamic dV/dt rating of 3.0 V/ns and body diode reverse recovery time of 290–580 ns under specified conditions. Its gate threshold voltage (2.0–4.0 V) and low Qgd/Qg ratio (8.9/18 nC) support reliable hard-switching operation in discontinuous conduction mode (DCM) topologies.
The device is rated for repetitive avalanche energy (4.2 mJ) and single-pulse avalanche energy (74 mJ), enabling robust operation in snubberless flyback converters. Thermal resistance RthJC = 3.0 °C/W and RthJA = 50 °C/W (PCB mount) confirm suitability for surface-mount thermal management without heatsinks in low-power adapters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports 400 V AC input rectified systems with 50% safety margin |
| RDS(on) | 4.4 Ω @ VGS = 10 V - determines conduction loss in primary switch; enables <2.0 W Pcond at 1.2 A RMS |
| Qg | 18 nC - defines gate drive power requirement; compatible with standard 10–15 V PWM controllers |
| ID (TC = 25 °C) | 2.0 A - maximum continuous drain current under ideal heatsink conditions |
| EAS | 74 mJ - allows safe unclamped inductive turn-off without external snubber in low-energy flyback |
| TJ Range | −55 to +150 °C - supports industrial ambient operation with derating above 100 °C case temperature |
| dV/dt Rating | 3.0 V/ns - ensures immunity to parasitic turn-on during high-slew-rate switching transitions |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction; dimensions per JEDEC outline: 6.09 mm × 6.54 mm × 2.285 mm (L × W × H), lead pitch 2.29 mm, thermal pad area 4.95 mm × 5.21 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; requires 10 V drive for full enhancement; ±20 V absolute max rating |
| Pin 2 (D) | Drain | Main high-voltage output node; electrically connected to exposed thermal pad; carries full load current |
| Pin 3 (S) | Source | Power ground reference; source inductance LS = 7.5 nH impacts switching ringing and diode recovery behavior |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables reliable operation in unclamped inductive switching without external protection components |
| Dynamic dV/dt rating | 3.0 V/ns immunity prevents false turn-on during high dv/dt transients in high-frequency SMPS |
| Low Qgd/Qg ratio | 0.49 - improves Miller immunity and reduces switching transition time in hard-switched topologies |
| Fast body diode recovery | trr = 290–580 ns - minimizes reverse recovery loss and EMI in quasi-resonant and DCM flyback |
| Surface-mount DPAK | Compatible with vapor-phase and IR reflow; thermal pad enables 2.5 W dissipation on 1"² FR-4 PCB |
Applications
| Offline AC-DC Adapters | Flyback Power Supplies |
|---|---|
Use Scenario: 5–15 W universal-input (85–265 VAC) wall adapters for consumer electronics. IC Role / Device Role / Timing Role: Primary-side high-voltage switch in DCM flyback topology, driven by UC3842 or similar controller. Use Value: Repetitive avalanche rating eliminates need for RCD snubber; 4.4 Ω RDS(on) keeps conduction loss below 0.5 W at full load. |
Use Scenario: Isolated 12 V/1 A auxiliary supply in industrial PLCs and motor drives. IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz with 50% duty cycle and 300 V VDS peak stress. Use Value: 74 mJ single-pulse avalanche energy withstands worst-case startup overloads without failure. |
| LED Driver Circuits | DC-DC Boost Converters |
Use Scenario: Constant-current LED driver for street lighting using 300 V DC bus. IC Role / Device Role / Timing Role: High-side switch in buck-boost or SEPIC configuration controlling LED string current. Use Value: 600 V VDS rating accommodates 300 V bus with 100% transient margin; low Qg enables efficient 100 kHz operation. |
Use Scenario: 24 V to 400 V boost converter in solar microinverter front-end stage. IC Role / Device Role / Timing Role: Main switching element handling 3–5 A peak inductor current at 50 kHz. Use Value: Body diode VSD = 1.6 V at 2.0 A reduces dead-time conduction loss; 3.0 V/ns dV/dt rating suppresses shoot-through risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP6NK60ZFP | 600 V, 6 A, RDS(on) = 1.2 Ω, TO-220FP package, Zener-protected gate | Higher current rating but larger footprint and higher gate charge (32 nC); requires heatsink for >1.5 A | Choose when higher continuous current or integrated gate protection is required; not drop-in due to package and pinout mismatch |
| IXTP2N60P | 600 V, 2.0 A, RDS(on) = 4.5 Ω, TO-220 package, no avalanche rating | Lacks repetitive avalanche capability; higher RthJA (62 °C/W) limits PCB-mount power handling | Acceptable only in snubber-protected circuits with strict thermal layout control; not suitable for snubberless flyback |
Compared with STP6NK60ZFP and IXTP2N60P, the IRFRC20TRLPBF-BE3 offers superior avalanche ruggedness and surface-mount compatibility for space-constrained 5–15 W designs, while maintaining competitive RDS(on) and lower gate drive demand than the STMicro part.
Availability
IRFRC20TRLPBF-BE3 is available at Aetrix Electronics and suitable for offline AC-DC adapters, flyback power supplies, and LED driver circuits requiring stable component supply with consistent DPAK (TO-252) packaging and Pb-free/halogen-free compliance.
Supply support for IRFRC20TRLPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.
The IRFRC20TRLPBF-BE3 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for cost-sensitive, thermally constrained offline SMPS and industrial power conversion where avalanche tolerance and surface-mount efficiency are critical.
FAQ
What is the maximum continuous drain current for IRFRC20TRLPBF-BE3 at 100 °C case temperature?
The IRFRC20TRLPBF-BE3 supports 1.3 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the DPAK package mounted on standard FR-4 PCB; actual usable current depends on layout, copper area, and ambient conditions. The IRFRC20TRLPBF-BE3 must be operated within this limit to avoid exceeding 150 °C junction temperature.
Does IRFRC20TRLPBF-BE3 have a specified avalanche energy rating?
Yes, the IRFRC20TRLPBF-BE3 is rated for 74 mJ single-pulse avalanche energy (EAS) and 4.2 mJ repetitive avalanche energy (EAR). These values are measured under defined test conditions (VDD = 50 V, L = 37 mH, IAS = 2.0 A) and enable snubberless operation in flyback converters. The IRFRC20TRLPBF-BE3 data sheet confirms repetitive rating with pulse width limited by junction temperature.
What is the gate-source threshold voltage range for IRFRC20TRLPBF-BE3?
The gate-source threshold voltage (VGS(th)) for IRFRC20TRLPBF-BE3 is specified from 2.0 V to 4.0 V at TJ = 25 °C and ID = 250 μA. This range indicates the minimum gate voltage needed to initiate conduction; full enhancement requires ≥10 V drive. The IRFRC20TRLPBF-BE3 is not a logic-level device and requires dedicated gate driver circuitry for reliable switching.
Can IRFRC20TRLPBF-BE3 be used in through-hole designs?
No - the IRFRC20TRLPBF-BE3 is exclusively offered in DPAK (TO-252) surface-mount package, as confirmed by ordering information and package drawings. Through-hole variants (e.g., IRFUC20 series) exist but are distinct part numbers with different lead forms and thermal characteristics. Substituting IRFRC20TRLPBF-BE3 into through-hole layouts is not mechanically or thermally viable.
What is the typical body diode reverse recovery time for IRFRC20TRLPBF-BE3?
The body diode reverse recovery time (trr) for IRFRC20TRLPBF-BE3 is 290–580 ns, measured at TJ = 25 °C, IF = 2.0 A, and dI/dt = 100 A/μs. This parameter directly affects switching losses and EMI in flyback and resonant converters. The IRFRC20TRLPBF-BE3 datasheet specifies trr across this range to account for process variation and test condition tolerances.
IRFRC20TRLPBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.4Ohm @ 1.2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 350 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
IRFRC20TRLPBF-BE3 FAQ
1.How can I place an order for IRFRC20TRLPBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFRC20TRLPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFRC20TRLPBF-BE3 reliable?
The price and inventory of IRFRC20TRLPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFRC20TRLPBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFRC20TRLPBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFRC20TRLPBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFRC20TRLPBF-BE3?
IRFRC20TRLPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFRC20TRLPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFRC20TRLPBF-BE3?
For technical support, including IRFRC20TRLPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFRC20TRLPBF-BE3 requirements.
6.How does Aetrix verify that IRFRC20TRLPBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFRC20TRLPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFRC20TRLPBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFRC20TRLPBF-BE3?
All IRFRC20TRLPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFRC20TRLPBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFRC20TRLPBF-BE3 part is unused and in its original packaging.
Return procedure for IRFRC20TRLPBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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